FOD817B300 [ONSEMI]
4 引脚 DIP 光电晶体管光耦合器;
| 型号： | FOD817B300 |
| 厂家： | 
ONSEMI |
| 描述： | 4 引脚 DIP 光电晶体管光耦合器 晶体管 光电晶体管 |
| 文件： | 总12页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FOD814 Series, FOD817 Series
4-Pin DIP Phototransistor Optocouplers
Features
Description
• AC Input Response (FOD814)
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
• Current Transfer Ratio in Selected Groups:
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
arsenide infrared emitting diode driving
phototransistor in a 4-pin dual in-line package.
a silicon
• Minimum BVCEO of 70 V Guaranteed
• Safety and Regulatory Approvals
– UL1577, 5,000 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
FOD814 Series
• AC Line Monitor
• Unknown Polarity DC Sensor
• Telephone Line Interface
FOD817 Series
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Functional Block Diagram
ANODE, CATHODE 1
CATHODE, ANODE 2
4 COLLECTOR
1
2
4
COLLECTOR
ANODE
4
3 EMITTER
CATHODE
3 EMITTER
FOD814
FOD817
1
Figure 2. Package Outlines
Figure 1. Schematic
Publication Order Number:
FOD814/D
©2006 Semiconductor Components Industries, LLC.
July-2018, Rev. 5
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–III
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
30/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Vpeak
Vpeak
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
,
1360
VPR
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
1594
VIORM
VIOTM
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
850
8000
7
Vpeak
Vpeak
mm
mm
mm
mm
°C
External Clearance
7
External Clearance (for Option W, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
10
0.4
175
DTI
TS
IS,INPUT
Input Current(1)
400
mA
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500 V(1)
Note:
700
> 1011
mW
1. Safety limit values – maximum values allowed in the event of a failure.
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2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
Value
Symbol
Parameter
Unit
FOD814
FOD817
Total Device
TSTG
TOPR
TJ
Storage Temperature
-55 to +150
°C
°C
Operating Temperature
-55 to +105
-55 to +110
Junction Temperature
-55 to +125
°C
TSOL
JC
Lead Solder Temperature
Junction-to-Case Thermal Resistance
Total Device Power Dissipation
260 for 10 seconds
°C
210
200
°C/W
mW
PTOT
EMITTER
IF
Continuous Forward Current
Reverse Voltage
±50
50
mA
V
VR
6
Power Dissipation
70
mW
PD
Derate Above 100°C
1.7
mW/°C
DETECTOR
VCEO
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate Above 90°C
70
6
V
V
VECO
IC
50
mA
150
2.9
mW
mW/°C
PC
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3
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
EMITTER
Parameter
Device
Test Conditions
Min.
Typ. Max. Unit
FOD814
FOD817
FOD817
FOD814
FOD817
IF = ±20 mA
IF = 20 mA
1.2
1.2
1.4
1.4
10
VF
IR
Forward Voltage
V
Reverse Current
VR = 4.0 V
µA
pF
V = 0, f = 1 kHz
V = 0, f = 1 kHz
50
30
250
250
Ct
Terminal Capacitance
DETECTOR
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
VCE = 20 V, IF = 0
100
100
ICEO
Collector Dark Current
nA
V
V
CE = 20 V, IF = 0
IC = 0.1 mA, IF = 0
IC = 0.1 mA, IF = 0
IE = 10 µA, IF = 0
IE = 10 µA, IF = 0
70
70
6
Collector-Emitter Breakdown
Voltage
BVCEO
BVECO
Emitter-Collector Breakdown
Voltage
V
6
DC Transfer Characteristics
Symbol
Parameter
Device
FOD814
Test Conditions
Min.
20
Typ. Max. Unit
300
150
600
IF = ±1 mA, VCE = 5 V
FOD814A
FOD817
50
50
CTR
Current Transfer Ratio(2)
FOD817A
80
160
260
400
600
0.2
%
V
FOD817B IF = 5 mA, VCE = 5 V
FOD817C
130
200
300
FOD817D
FOD814
FOD817
IF = ±20 mA, IC = 1 mA
IF = 20 mA, IC = 1 mA
0.1
0.1
Collector-Emitter Saturation
Voltage
VCE(SAT)
0.2
AC Transfer Characteristics
Symbol
Parameter
Device
Test Conditions
Min.
Typ. Max. Unit
VCE = 5 V, IC = 2 mA,
RL = 100 , -3 dB
fC
Cut-Off Frequency
FOD814
15
80
4
kHz
µs
FOD814,
FOD817
tr
Response Time (Rise)
Response Time (Fall)
18
18
VCE = 2 V, IC = 2 mA,
RL = 100 (3)
FOD814,
FOD817
tf
3
µs
Notes:
2. Current Transfer Ratio (CTR) = IC / IF x 100%.
3. For test circuit setup and waveforms, refer to page 7.
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4
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Isolation Characteristics
Symbol
Parameter
Device
Test Conditions
Min.
Typ. Max.
Unit
Input-Output Isolation
Voltage(4)
f = 60 Hz, t = 1 minute,
II-O 2 µA
FOD814,
FOD817
VISO
5000
VACRMS
FOD814,
FOD817
RISO
Isolation Resistance
Isolation Capacitance
VI-O = 500 VDC
5x1010 1x1011
FOD814,
FOD817
CISO
VI-O = 0, f = 1 MHz
0.6
1.0
pf
Note:
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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5
Typical Electrical/Optical Characteristic Curves
TA = 25°C unless otherwise specified.
200
150
100
50
200
150
100
50
0
-55
0
-55
-40 -20
0
20 40 60 80 100 120
-40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
A
AMBIENT TEMPERATURE T (°C)
A
Fig. 3 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
Fig. 4 Collector Power Dissipation
vs. Ambient Temperature (FOD817)
(FOD814)
6
100
10
1
Ic = 0.5mA
Ta = 25°C
1mA
3mA
5mA
T
A
= 105oC
75oC
50oC
5
4
7mA
25oC
0oC
-30oC
3
2
1
0
-55oC
0.1
0.5
1.0
1.5
2.0
0
2.5
5.0
7.5 10.0 12.5 15.0
FORWARD CURRENT I (mA)
FORWARD VOLTAGE V (V)
F
F
Fig. 5 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 6 Forward Current vs. Forward Voltage
100
10
1
140
VCE = 5V
Ta= 25°C
T
A
= 110oC
75oC
50oC
120
100
80
60
40
20
0
FOD817
25oC
0oC
-30oC
FOD814
-55oC
0.1
0.5
1.0
1.5
2.0
0.1 0.2 0.5
1
2
5 10 20 50 100
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (mA)
F
F
Fig. 8 Current Transfer Ratio
Fig. 7 Forward Current vs. Forward Voltage
(FOD817)
vs. Forward Current
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6
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
30
25
20
15
10
5
50
40
30
20
10
0
Ta= 25°C
II = 30mA
Ta = 25°C
Pc(MAX.)
F
IF = 30mA
20mA
20mA
Pc(MAX.)
10mA
10mA
5mA
5mA
1mA
10 20 30 40 50 60 70 80 90 100
0
0
10 20 30 40 50 60 70 80 90
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Fig. 10 Collector Current vs.
Collector-Emitter Voltage (FOD817)
Fig. 9 Collector Current
vs. Collector-Emitter Voltage (FOD814)
160
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
I
= 20mA
= 1mA
FOD814
F
F
I
= 1 mA
= 5V
140
120
100
80
C
V
CE
FOD817
= 5mA
I
F
60
V
CE
= 5V
40
20
0
-60 -40 -20
0
20 40 60 80 100 120
-60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
A
AMBIENT TEMPERATURE T (°C)
A
Fig. 12 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 11 Relative Current Transfer
Ratio vs. Ambient Temperature
100
100
80
60
40
20
0
80
60
40
20
0
-55 -40 -20
0
20 40 60 80 100 120
-55 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
AMBIENT TEMPERATURE T (°C)
A
A
Fig. 13 LED Power Dissipation vs.
Ambient Temperature (FOD814)
Fig. 14 LED Power Dissipation vs.
Ambient Temperature (FOD817)
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7
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
100
V
CE= 2V
VCE = 2V
Ic= 2mA
Ta = 25°C
Ic = 2mA
Ta = 25°C
50
tr
0
-10
-20
20
10
5
tf
td
RL=10k
100
1k
2
1
ts
0.5
0.2
0.1
0.1 0.2 0.5
1
2
5
10
0.2 0.5 15 2
10
100
1000
FREQUENCY f (kHz)
LOAD RESISTANCE R (kΩ)
L
Fig. 16 Frequency Response
Fig. 1
5 Response Time
vs. Load Resistance
10000
1000
100
10
V
CE
= 20V
1
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T (°C)
A
Fig. 1
7 Collector Dark Current
vs. Ambient Temperature
Test Circuit for Frequency Response
Test Circuit for Response Time
Vcc
Input
Output
Output
Vcc
RL
RL
RD
Output
10%
RD
Input
90%
td
ts
tr
tf
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8
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
t
P
240
220
200
180
160
140
120
100
80
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
Figure 20. Reflow Profile
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9
Ordering Information
Part Number
Package
Packing Method
Tube (100 units per tube)
FOD817X
DIP 4-Pin
FOD817XS
FOD817XSD
FOD817X300
FOD817X3S
FOD817X3SD
SMT 4-Pin (Lead Bend)
SMT 4-Pin (Lead Bend)
Tube (100 units per tube)
Tape and Reel (1,000 units per reel)
Tube (100 units per tube)
DIP 4-Pin, DIN EN/IEC60747-5-5 option
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
Tube (100 units per tube)
Tape and Reel (1,000 units per reel)
FOD817X300W DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube)
Note:
The product orderable part number system listed in this table also applies to the FOD814 products.
"X" denotes the Current Transfer Ratio (CTR) options
Marking Information
4
5
6
V X ZZ Y
817
3
2
1
Figure 21. Top Mark
Definitions
1
2
3
ON Semiconductor Logo
Device Number
VDE Mark (Note: Only appears on parts ordered with VDE option.
See order entry table)
4
5
6
One Digit Year Code
Two Digit Work Week Ranging from ‘01’ to ‘53’
Assembly Package Code
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10
Carrier Tape Specifications
P
P
0
2
Ø1.55 0.05
1.75 0.1
F
W
B0
A0
P
1
0.3 0.05
K0
Figure 22. Carrier Tape Specification
Description
Symbol
Dimensions in mm (inches)
16 ± 0.3 (0.63)
W
Tape wide
P0
Pitch of sprocket holes
4 ± 0.1 (0.15)
F
P2
Distance of compartment
7.5 ± 0.1 (0.295)
2 ± 0.1 (0.079)
P1
A0
B0
K0
Distance of compartment to compartment
Compartment
12 ± 0.1 (0.472)
10.45 ± 0.1 (0.411)
5.30 ± 0.1 (0.209)
4.25 ± 0.1 (0.167)
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11
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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❖
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