FOD8320 [ONSEMI]

高抗扰性,2.5A 输出电流,门极驱动光耦合器,采用 Optoplanar® 宽体 SOP 5 引脚封装;
FOD8320
型号: FOD8320
厂家: ONSEMI    ONSEMI
描述:

高抗扰性,2.5A 输出电流,门极驱动光耦合器,采用 Optoplanar® 宽体 SOP 5 引脚封装

驱动 光电
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中文:  中文翻译
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2014 11 月  
FOD8320  
高抗噪能力、 2.5 A 输出电流、栅极驱动光电耦合器,采用  
Optoplanar® 宽体 SOP 5 引脚  
特性  
描述  
Fairchild Optoplanar® 封装技术提供可靠的高电压隔  
离、超过 10 mm 的爬电和间隙距离以及 0.5 mm 的内  
部绝缘距离,同时还提供紧凑的尺寸  
FOD8320 是一个 2.5 A 的输出电流栅极驱动光电耦合器,  
可驱动中等功率的 IGBT/MOSFET。它非常适用于快速开  
关驱动在电机控制逆变器应用以及高性能电源系统中使用  
的功率 IGBT MOSFET。  
用于中等功率 IGBT/MOSFET 2.5 A 输出电流驱动  
能力  
FOD8320 采用 Fairchild Optoplanar® 共面封装技术和  
优化的 IC 设计,实现了高绝缘电压和高抗噪能力。  
– P 沟道 MOSFET 在输出级可实现接近供电轨的输出  
电压摆幅  
它是由与具有高速驱动器的集成电路进行光耦合的铝砷化  
(AlGaAs) 光二极管 (LED) 实现推挽式  
MOSFET 输出级器件包含在一个宽体 5 引脚小型塑料  
封装中。  
35 kV/µs 最小共模抑制  
宽电源电压范围:15 V 30 V  
在整个工作温度范围内可快速开关:  
– 400 ns 最大传播延迟  
功能示意图  
– 100 ns 最大脉宽失真度  
具有滞回的欠压闭锁 (UVLO)  
扩展工业温度范围:-40°C  
安全和法规认证:  
100°C  
V
V
V
1
3
6
5
4
ANODE  
DD  
– UL15775,000 VRMS 1 分钟  
– DIN EN/IEC60747-5-51,414 V 峰值工作  
绝缘电压  
O
应用  
CATHODE  
SS  
AC 和无刷 DC 电机驱动  
工业变频器  
1. 原理图  
不间断电源  
感应加热  
隔离 IGBT/ 功率 MOSFET 栅极驱动  
相关资源  
FOD3120,高抗噪能力、 2.5 A 输出  
电流、栅极驱动光电耦合器数据手册  
www.fairchildsemi.com/products/opto/  
2. 封装外形  
©2010 飞兆半导体公司  
FOD8320 Rev.1.0.7  
www.fairchildsemi.com  
真值表  
V
V
– V 正向 (导通)  
V
– V 正向 (关断)  
LED  
O
DD  
SS  
DD  
SS  
0 V 30 V  
0 V 11.5 V  
11.5 V 14.5 V  
14.5 V 30 V  
0 V 30 V  
0 V 10 V  
10 V 13 V  
13 V 30 V  
导通  
导通  
导通  
转换  
引脚配置  
1
6
V
ANODE  
DD  
5
V
O
3
4
CATHODE  
V
SS  
3. 引脚配置  
引脚定义  
引脚号  
名称  
描述  
1
3
4
5
6
阳极  
阴极  
VSS  
VO  
LED 阳极  
LED 阴极  
负极电源电压  
输出电压  
VDD  
正向电源电压  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
2
安全性和绝缘标准  
根据 DIN EN/IEC60747-5-5,此光电耦合器仅适用于安全极限数据之内的 安全电气绝缘 。通过保护性电路确保各项  
安全标准达标。  
符号  
参数  
安装标准符合 DIN VDE 0110/1.89 1  
用于额定市电电压 < 150 VRMS  
用于额定市电电压 < 300 VRMS  
用于额定市电电压 < 450 VRMS  
用于额定市电电压 < 600 VRMS  
气候分类  
最小值  
典型值 最大值 单位  
I–IV  
I–IV  
I–IIII  
I–III  
40/100/21  
2
污染等级 (DIN VDE 0110/1.89)  
相比漏电起痕指数  
CTI  
175  
输入至输出测试电压,方法 bVIORM x 1.875 = VPR100%  
生产测试, tm = 1 s,局部放电 < 5 pC  
2651  
Vpeak  
Vpeak  
VPR  
输入至输出测试电压,方法 aVIORM x 1.6 = VPR,类型和样  
品测试, tm = 10 s,局部放电 < 5 pC  
2262  
VIORM  
VIOTM  
1414  
8000  
10.0  
10.0  
0.5  
Vpeak  
Vpeak  
mm  
最大工作绝缘电压  
最高允许过电压  
外部爬电距离  
mm  
外部绝缘间隙  
mm  
绝缘厚度  
安全极限值 发生故障时允许的最大值  
壳体温度  
TS  
IS,INPUT  
PS,OUTPUT  
RIO  
150  
200  
600  
109  
°C  
mA  
mW  
输入电流  
输出功率  
TS, VIO = 500 V 时的绝缘阻抗  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
3
绝对最大额定值  
应力超过绝对最大额定值,可能会损坏器件。在超出推荐的工作条件和应力的情况下,该器件可能无法正常工作,所以  
不建议让器件在这些条件下工作。此外,长期在高于推荐的工作条件下工作,会影响器件的可靠性。绝对最大额定值仅  
为额定应力值。除非另有说明, TA = 25°C。  
符号  
TSTG  
TOPR  
TJ  
参数  
数值  
单位  
°C  
存储温度  
工作温度  
结温  
-40 +125  
-40 +100  
-40 +125  
°C  
°C  
引脚焊接温度  
TSOL  
260, 10 s  
°C  
请参考第 15 页的回流焊温度曲线。  
平均输入电流  
IF(AVG)  
F
25  
50  
mA  
kHz  
V
工作频率  
VR  
5.0  
3.0  
反向输入电压  
峰值输出电流 (1)  
IO(PEAK)  
VDD  
A
V
电源电压  
0 35  
0 VDD  
500  
VO(PEAK)  
tR(IN), tF(IN)  
PDI  
V
峰值输出电压  
ns  
输入信号上升和下降时间  
输入功耗 (2)(4)  
45  
mW  
mW  
输出功耗 (3)(4)  
PDO  
500  
注意:  
1. 最大脉宽 = 10 µs,最大占空比 = 0.2%。  
2. 在整个工作温度范围内无需降额。  
3. 线性降额,从额定值 5.2 mW/°C25°C 开始。  
4. 不建议在这些条件下运行。如果所经受的条件超出额定值,器件可能出现永久损害。  
推荐工作条件  
推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件,以确保器件的最佳性能达到数据表中的规格。  
飞兆不建议超出额定或依照绝对最大额定值进行设计。  
符号  
TA  
参数  
最小值  
最大值  
100  
30  
单位  
°C  
-40  
16  
7
工作环境温度  
电源电压  
VDD – VSS  
IF(ON)  
V
16  
mA  
V
输入电流 (ON)  
输入电压 (OFF)  
VF(OFF)  
0
0.8  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
4
绝缘特性  
应用于所有推荐的条件,典型值测量为 TA = 25°C。  
符号  
参数  
工作条件  
最小值 典型值 最大值 单位  
TA = 25ºC, R.H. < 50%, t = 60 s,  
I
VISO  
5,000  
VRMS  
输入输出绝缘电压  
I-O 20 µA, 50 Hz(5)(6)  
RISO  
CISO  
VI-O = 500 V(5)  
VI-O = 0 V, Frequency = 1.0 MHz(6)  
1011  
1
绝缘电阻  
绝缘电容  
pF  
注意:  
5. 器件属于双端器件:引脚 1 3 短接在一起,引脚 45 6 短接在一起。  
6. 5,000 VACRMS 持续 1 分钟相当于 6,000 VACRMS 持续 1 秒钟。  
电气特性  
应用于所有建议条件,典型值在 VDD = 30 VVSS = 接地, TA = 25°C 时测得 (除非另有说明。  
符号  
VF  
参数  
工作条件  
最小值  
典型值  
1.5  
最大值  
单位  
1.1  
1.8  
V
19  
输入正向电压  
IF = 10 mA  
Δ(VF / TA)  
BVR  
-1.8  
mV/°C  
正向电压温度系数  
反向击穿输入电压  
输入电容  
IR = 10 µA  
5
V
pF  
A
CIN  
f = 1 MHz, VF = 0 V  
VOH = VDD – 3 V  
60  
1.0  
2.0  
1.0  
2.0  
2.0  
2.5  
2.5  
2.5  
2.5  
4, 6  
4, 6, 22  
7, 9  
高电平输出电流 (1)  
低电平输出电流 (1)  
高电平输出电压 (7)(8)  
低电平输出电压 (7)(8)  
IOH  
VOH = VDD – 6 V  
A
VOL = VSS + 3 V  
2.0  
A
IOL  
VOL = VSS + 6 V  
A
7, 9, 21  
4
IF = 10 mA, IO = -2.5 A  
IF = 10 mA, IO = -100 mA  
IF = 10 mA, IO = 2.5 A  
IF = 0 mA, IO = 100 mA  
VDD – 6.25 VDD – 2.5  
VDD – 0.5 VDD – 0.1  
V
VOH  
4, 5, 23  
7
VSS + 2.5 VSS + 6.25  
V
VOL  
VSS + 0.1  
VSS + 0.5  
8, 24  
10, 11,  
25  
IDDH  
IDDL  
IFLH  
2.9  
3.8  
mA  
mA  
mA  
高电平电源电流  
低电平电源电流  
V
O 开路, IF = 7 16 mA  
O 开路,VF = 0 0.8 mA  
10, 11,  
26  
2.8  
2.4  
3.8  
5.0  
V
12, 18,  
27  
阈值输入电流 低电平至高  
电平  
I
O = 0 mA, VO > 5 V  
VFHL  
VUVLO+  
VUVLO-  
IO = 0 mA, VO < 5 V  
IF = 10 mA, VO > 5 V  
IF = 10 mA, VO < 5 V  
0.8  
11.5  
10.0  
V
V
V
V
28  
阈值输入电压 高至低  
12.7  
11.2  
1.5  
14.5  
13.0  
20, 29  
20, 29  
欠压闭锁阈值  
UVLOHYS  
欠压闭锁阈值滞后  
注意:  
7. 在此测试中, VOH dc 负载电流为 100 mA 时测得。驱动容性负载时, VOH 将随着 IOH 接近 0 A 而接近 VDD  
8. 最大脉宽 = 1 ms,最大占空比 = 20%。  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
5
开关特性  
应用于所有建议条件,典型值在 VDD = 30 VVSS = 接地, TA = 25°C 时测得 (除非另有说明。  
符号  
参数  
工作条件  
最小值 典型值 最大值  
单位  
13, 14,  
15, 16,  
17, 30  
逻辑低输出的传播延迟时间 (9)  
tPHL  
150  
150  
285  
400  
400  
ns  
13, 14,  
15, 16,  
17, 30  
逻辑高输出的传播延迟时 (10)  
脉宽失真度 (11)  
tPLH  
260  
25  
ns  
ns  
IF = 7 mA 16 mARg =  
10 Cg = 10 nFf = 10 kHz,  
占空比 = 50%  
PWD  
PDD  
(偏斜) 差 (12)  
100  
250  
| tPHL – tPLH  
|
任意两个器件之间的传播延迟  
-250  
输出上升时间  
tR  
tF  
60  
60  
ns  
ns  
30  
30  
10% 90%)  
输出下降时间  
90% 10%)  
tULVO ON  
IF = 10 mA, VO > 5 V  
IF = 10 mA, VO < 5 V  
TA = 25°CVDD = 30 V,  
0.8  
0.4  
µs  
µs  
ULVO 导通延迟  
ULVO 关断延迟  
tULVO OFF  
| CMH  
|
I
V
F = 7 mA 16 mA,  
35  
35  
50  
50  
kV/µs  
kV/µs  
31  
31  
输出高时的共模瞬态抑制性  
输出低时的共模瞬态抑制性  
CM = 2000 V(13)  
TA = 25°C, VDD = 30 V, VF = 0 V,  
CM = 2000 V(14)  
| CML |  
V
注意:  
9. 传播延迟 tPHL 的测量是从输入脉冲下降沿的 50% 电平至 VO 信号下降沿的 50% 电平。  
10. 传播延迟 tPLH 的测量是从输入脉冲上升沿的 50% 电平至 VO 信号上升沿的 50% 电平。  
11. 在任何给定器件上, PWD 被定义为 | tPHL – tPLH |。  
12. 在相同的工作条件下,负载相同的任意两个 FOD8320 器件之间 tPHL tPLH 之差。  
13. 输出高电平状态下的共模瞬态抑制性是共模脉冲信号后沿上的最大容许负 dVcm/dtVCM,从而确保输出将保持高  
电平状态 (即 VO > 15.0 V。  
14. 输出低电平状态下的共模瞬态抑制性是共模脉冲信号前沿上的最大容许正 dVcm/dtVCM,从而确保输出将保持低  
电平状态 (即 VO < 1.0 V。  
©2010 飞兆半导体公司  
FOD8320 Rev.1.0.7  
www.fairchildsemi.com  
6
典型性能特征  
0
-0.05  
-0.10  
-0.15  
-0.20  
-0.25  
-0.30  
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
T
= -40ºC  
A
25ºC  
100ºC  
V
V
= 15 V to 30 V  
= 0 V  
= 7 mA to 16 mA  
= -100 mA  
DD  
SS  
V
V
= 15 V to 30 V  
= 0 V  
= 7 mA to 16 mA  
DD  
SS  
-3.5  
-4.0  
I
I
F
O
I
F
f = 200 Hz 0.2% Duty Cycle  
-40  
-20  
0
20  
40  
60  
80  
100  
0
0.5 1.0  
1.5  
2.0  
2.5  
TA – AMBIENT TEMPERATURE (ºC  
)
IOH – OUTPUT HIGH CURRENT (A)  
Figure 4. Output High Voltage Drop  
vs. Output High Current  
Figure 5. Output High Voltage Drop  
vs. Ambient Temperature  
4
3
2
1
0
8
7
6
5
4
3
2
1
0
V
V
= 15 V to 30 V  
= 0 V  
= 0 mA  
DD  
SS  
I
F
f = 200 Hz 99.8% Duty Cycle  
T
A
= 100ºC  
25ºC  
V
V
= V  
= V  
– 6 V  
– 3 V  
O
DD  
-40ºC  
O
DD  
V
V
= 15 V to 30 V  
= 0 V  
= 7 mA to 16 mA  
DD  
SS  
I
F
f = 200 Hz 0.2% Duty Cycle  
0
0.5  
1.0  
1.5  
2.0  
2.5  
-40  
-20  
0
20  
40  
60  
80  
100  
IOL – OUTPUT LOW CURRENT (A)  
TA – AMBIENT TEMPERATURE (ºC  
)
Figure 6. Output High Current  
vs. Ambient Temperature  
Figure 7. Output Low Voltage  
vs. Output Low Current  
0.25  
8
6
4
2
0
V
DD  
V
SS  
= 15 V to 30 V  
= 0 V  
V
V
V
= 15 V to 30 V  
= 0 V  
= 0 V or 0.8 V  
= 100 mA  
DD  
SS  
F
I
F
= 0 A  
0.20  
0.15  
0.10  
0.05  
0
f = 200 Hz 99.8% Duty Cycle  
I
O
V
V
= V  
+ 6V  
SS  
O
O
= V + 3V  
SS  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
TA – AMBIENT TEMPERATURE (ºC  
)
TA – AMBIENT TEMPERATURE (ºC)  
Figure 8. Output Low Voltage  
vs. Ambient Temperature  
Figure 9. Output Low Current  
vs. Ambient Temperature  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
7
典型性能特征 (续)  
3.6  
3.6  
3.2  
2.8  
2.4  
2.0  
I
F
I
F
= 10 mA (for I  
= 0 mA (for I  
)
V
V
I
= 30 V  
= 0 V  
= 10 mA (for I  
= 0 mA (for I  
DDH  
)
DD  
SS  
F
DDL  
V
T
= 0 V  
= 25ºC  
)
SS  
A
DDH  
)
I
F
DDL  
3.2  
2.8  
2.4  
2.0  
I
DDH  
I
DDH  
I
DDL  
I
DDL  
-40  
-20  
0
20  
40  
60  
80  
100  
15  
20  
25  
30  
TA – AMBIENT TEMPERATURE (ºC  
)
VDD – SUPPLY VOLTAGE (V)  
Figure 10. Supply Current  
vs. Ambient Temperature  
Figure 11. Supply Current  
vs. Supply Voltage  
4
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
500  
400  
300  
200  
100  
I
R
C
= 10 mA  
V
V
= 15 V to 30 V  
= 0 V  
F
DD  
SS  
= 10 Ω  
g
= 10 nF  
= 25ºC  
Output = Open  
g
A
T
f = 10 kHz 50% Duty Cycle  
t
PHL  
t
PLH  
-40  
-20  
0
20  
40  
60  
80  
100  
15  
18  
21  
24  
27  
30  
TA – AMBIENT TEMPERATURE (ºC  
)
VDD – SUPPLY VOLTAGE (V)  
Figure 13. Propagation Delay  
vs. Supply Voltage  
Figure 12. Low to High Input Current Threshold  
vs. Ambient Temperature  
500  
500  
400  
300  
200  
100  
V
V
= 30 V  
= 0 V  
V
V
= 30 V  
= 0 V  
DD  
SS  
DD  
SS  
f = 10 kHz 50% Duty Cycle  
R
C
I = 10 mA  
F
= 10 Ω  
= 10 nF  
= 25ºC  
f = 10 kHz 50% Duty Cycle  
R
C
g
g
400  
300  
200  
100  
= 10 Ω  
= 10 nF  
g
g
T
A
t
t
PHL  
PHL  
t
PLH  
t
PLH  
6
8
10  
12  
14  
16  
-40  
-20  
0
20  
40  
60  
80  
100  
IF – FORWARD LED CURRENT (mA)  
TA – AMBIENT TEMPERATURE (ºC  
)
Figure 15. Propagation Delay  
vs. Ambient Temperature  
Figure 14. Propagation Delay  
vs. LED Forward Current  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
8
典型性能特征 (续)  
500  
500  
400  
300  
200  
100  
V
V
= 30 V  
= 0 V  
= 10 mA  
V
V
= 30 V  
= 0 V  
DD  
SS  
DD  
SS  
I
F
I = 10 mA  
F
f = 10 kHz 50% Duty Cycle  
C
f = 10 kHz 50% Duty Cycle  
R
400  
300  
200  
100  
= 10 nF  
= 25ºC  
= 10  
Ω
g
g
T
A
T
A
= 25ºC  
t
PHL  
t
PHL  
t
PLH  
t
PLH  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
100  
Rg – SERIES LOAD RESISTANCE (Ω)  
Cg – LOAD CAPACITANCE (nF)  
Figure 16. Propagation Delay  
vs. Series Load Resistance  
Figure 17. Propagation Delay  
vs. Load Capacitance  
35  
30  
25  
20  
15  
10  
5
100  
10  
V
= 30 V  
DD  
= 25ºC  
T
A
100ºC  
-40ºC  
25ºC  
1
0.1  
0.01  
0.001  
0
0
1
2
3
4
5
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
IF – FORWARD LED CURRENT (mA)  
VF – FORWARD VOLTAGE (V)  
Figure 18. Transfer Characteristics  
Figure 19. Input Forward Current  
vs. Forward Voltage  
14  
I
F
= 10 mA  
T
A
= 25ºC  
12  
10  
8
V
= 11.56 V  
V
= 13.12 V  
UVLO  
UVLO  
6
4
2
0
0
5
10  
15  
20  
V
–V – SUPPLY VOLTAGE (V)  
DD SS  
Figure 20. Under Voltage Lockout  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
9
测试电路  
Power Supply  
+
+
V
= 15 V to 30 V  
+
DD  
C2  
47 µF  
C1  
0.1 µF  
Pulse Generator  
PW = 4.99 ms  
Period = 5 ms  
Pulse-In  
R
= 50 Ω  
OUT  
1
6
5
4
I
OL  
R2  
100 Ω  
Power Supply  
V = 6 V  
+
C4  
47 µF  
C3  
0.1 µF  
D1  
VOL  
3
LED-IFmon  
To Scope  
R1  
100 Ω  
Test Conditions:  
Frequency = 200 Hz  
Duty Cycle = 99.8%  
V
V
= 15 V to 30 V  
= 0 V  
DD  
SS  
I
= 0 mA  
F
21. IOL 测试电路  
Power Supply  
+
V
= 15 V to 30 V  
+
DD  
C2  
47 µF  
C1  
0.1 µF  
Pulse Generator  
PW = 10 µs  
Period = 5 ms  
Pulse-In  
R
= 50 Ω  
OUT  
+
1
6
Power Supply  
V = 6 V  
+
C4  
47 µF  
C3  
0.1 µF  
I
OH  
R2  
100 Ω  
5
D1  
VOH  
Current  
Probe  
3
4
LED-IFmon  
To Scope  
R1  
100 Ω  
Test Conditions:  
Frequency = 200 Hz  
Duty Cycle = 0.2%  
V
V
= 15 V to 30 V  
= 0 V  
DD  
SS  
I
F
= 7 mA to 16 mA  
22. IOH 测试电路  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
10  
测试电路 (续)  
1
3
6
5
4
0.1 µF  
+
V
V
= 15 V to 30 V  
O
DD  
I
= 7 mA to 16 mA  
F
100 mA  
23. VOH 测试电路  
1
6
0.1 µF  
100 mA  
+
V
= 15 V to 30 V  
DD  
V
O
5
4
3
24. VOL 测试电路  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
11  
测试电路 (续)  
1
3
6
0.1 µF  
+
V
= 30 V  
DD  
I
= 7 mA to 16 mA  
V
O
5
F
4
25. IDDH 测试电路  
1
6
5
4
0.1 µF  
+
V
= 30 V  
DD  
+
V
V
= -3.0 V to 0.8 V  
O
F
3
26. IDDL 测试电路  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
12  
测试电路 (续)  
1
3
6
5
4
0.1 µF  
+
V
= 15 V to 30 V  
DD  
V
> 5 V  
O
IF  
27. IFLH 测试电路  
1
3
6
5
4
0.1 µF  
+
+
V
O
V
= 15 V to 30 V  
DD  
V
= –3.0 V to 0.8 V  
F
28. IFHL 测试电路  
1
3
6
5
4
0.1 µF  
+
15 V or 30 V  
V
= 5 V  
I
= 10 mA  
O
F
V
Ramp  
DD  
29. UVLO 测试电路  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
13  
测试电路 (续)  
1
3
6
5
4
0.1 µF  
V
O
+
V
= 15 V to 30 V  
+
DD  
Rg = 10 Ω  
Probe  
50 Ω  
f = 10 kHz  
DC = 50%  
Cg = 10 nF  
I
F
t
R
t
F
90%  
50%  
10%  
V
OUT  
t
t
PHL  
PLH  
30. tPHLtPLHtR tF 测试电路和波形  
I
F
A
B
1
3
6
5
4
0.1 µF  
+
+
V
5 V  
O
V
= 30 V  
DD  
+ –  
V
= 2,000 V  
CM  
V
CM  
0V  
V
Δt  
V
O
OH  
Switch at A: I = 10 mA  
F
V
O
V
OL  
Switch at B: I = 0 mA  
F
31. CMR 测试电路与波形  
©2010 飞兆半导体公司  
FOD8320 Rev.1.0.7  
www.fairchildsemi.com  
14  
回流焊数据  
Maximum Ramp-up Rate = 3°C/s  
Maximum Ramp-down Rate = 6°C/s  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
T
smax  
t
L
Preheat Area  
T
smin  
t
s
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
特征  
无铅装配数据  
150°C  
最低温度 (Tsmin  
)
200°C  
最高温度 (Tsmax  
)
时间 (tS) Tsmin Tsmax  
斜升率 (tL tP)  
液态温度 (TL)  
60 s 120 s  
3°C/ 秒 (最大值)  
217°C  
保持在 (tL) 以上的时间 (tL)  
体封装温度峰值  
60 s 150 s  
260°C +0°C / –5°C  
30 s  
时间 (tP) 260°C 中的 5°C 内  
斜降率 (TP TL)  
6°C/s (最大值)  
8 分钟 (最大值)  
25°C 至峰值温度的时间  
32. 回流焊数据  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
15  
订购信息  
器件编号  
封装  
包装方法  
卷管 (每卷管 100 装)  
FOD8320  
宽体 SOP 5 引脚  
宽体 SOP 5 引脚  
FOD8320R2  
FOD8320V  
FOD8320R2V  
卷带和卷盘 (每卷 1000 装)  
卷管 (每卷管 100 装)  
宽体 SOP 5 引脚, DIN EN/IEC60747-5-5 选项  
宽体 SOP 5 引脚, DIN EN/IEC60747-5-5 选项  
卷带和卷盘 (每卷 1000 装)  
根据 JEDECJ-STD-020B 标准, J-STD-020B 标准。  
标识信息  
1
3
2
V
8320  
8
W
D X YY KK  
6
5
4
7
定义  
1
2
3
Fairchild 徽标  
器件号,例如, 8320” 代表 FOD8320  
DIN EN/IEC60747-5-5 选项 (只有组件订购附带此选项时  
出现)  
4
5
6
7
8
工厂代码,例如, “D”  
上一个数字年份代码,例如, “C” 代表 2012  
两位数工作周数,从 “01” “53”  
批量可追溯性代码  
封装装配代码, W  
©2010 飞兆半导体公司  
www.fairchildsemi.com  
FOD8320 Rev.1.0.7  
16  
0.20 C A-B  
D
3.95  
0.60  
2X  
1.27  
4
6
1.38  
1.27  
A
6
4
4.60  
11.38  
11.80  
11.60  
9.20  
1
3
0.10 C D  
3
1
2X  
0.33 C  
PIN ONE  
INDICATOR  
2.54  
2.54  
0.25  
C A-B D  
B
5X  
LAND PATTERN  
RECOMMENDATION  
0.51  
0.31  
5 TIPS  
2.65  
2.45  
A
0.10 C  
SEATING  
PLANE  
2.95 MAX  
0.10 C  
0.30  
0.10  
5X  
C
NOTES: UNLESS OTHERWISE SPECIFIED  
1.35  
1.15  
A) THIS PACKAGE DOES NOT  
CONFORM TO ANY STANDARD.  
B) ALL DIMENSIONS ARE IN  
MILLIMETERS.  
(R0.54)  
C) DIMENSIONS ARE EXCLUSIVE OF  
BURRS, MOLD FLASH AND TIE BAR  
PROTRUSIONS  
GAUGE  
D) DRAWING CONFORMS TO ASME  
Y14.5M-1994  
E) DRAWING FILE NAME:  
MKT-M05AREV3  
PLANE  
0.25  
0.19  
8°  
0°  
0.74  
0.44  
0.25  
(R1.29)  
C
SEATING  
PLANE  
SCALE: 3.2:1  
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