FOD8343 [ONSEMI]
4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin;
| 型号： | FOD8343 |
| 厂家： | 
ONSEMI |
| 描述： | 4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin 栅 |
| 文件： | 总17页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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4.0 A Output Current,
High Speed Gate Drive
Optocoupler in Stretched
Body SOP 6-Pin
SOIC6
CASE 751EL
SOIC6 W
CASE 751EM
FOD8343, FOD8343T
MARKING DIAGRAM
Description
ON
The FOD8343 series is a 4.0 A maximum peak output current gate
drive optocoupler, capable of driving medium−power IGBT /
MOSFETs. It is ideally suited for fast−switching driving of power
IGBT and MOSFET used in motor−control inverter applications, and
high−performance power systems.
8343
VXXYYP
8343 = Device Number
V
= DIN EN/IEC60747−5−5 Option (Only Appears
on Component Ordered with this Option)
The FOD8343 series utilizes stretched body package to achieve
8 mm creepage and clearance distances (FOD8343T), and optimized
IC design to achieve reliably high−insulation voltage and high−noise
immunity.
XX = Two Digit Year Code, e.g. ‘15’
YY = Two Digit Work Week Ranging from ‘01’ to ‘53’
P
= Assembly Package Code
The FOD8343 series consists of an Aluminum Gallium Arsenide
(AlGaAs) Light−Emitting Diode (LED) optically coupled to an
integrated circuit with a high−speed driver for push−pull MOSFET
output stage. The device is housed in a stretched body, 6−pin, small
outline, plastic package.
FUNCTIONAL SCHEMATIC
ANODE
1
2
3
6
5
4
VDD
Features
VO
• FOD8343T − 8 mm Creepage and Clearance Distance, and 0.4 mm
Insulation Distance to Achieve Reliable and High−Voltage Insulation
• 4.0 A Maximum Peak Output Current Driving Capability for
CATHODE
VSS
Medium−Power IGBT/MOSFET
♦ Use of P−Channel MOSFETs at Output Stage Enables Output
Voltage Swing Close to Supply Rail
• 50 kV/ms Minimum Common Mode Rejection Wide Supply Voltage
Range: 10 V to 30 V
ORDERING INFORMATION
• Fast Switching Speed Over Full Operating Temperature Range
See detailed ordering and shipping information on page 14 of
this data sheet.
♦ 210 ns Maximum Propagation Delay
♦ 65 ns Maximum Pulse Width Distortion Under−Voltage Lockout
(UVLO) with Hysteresis
• Extended Industrial Temperate Range: −40°C to 100°C
Related Resources
• Safety and Regulatory Approvals:
♦ UL1577, 5,000 VRMS for 1 Minute
♦ DIN EN/IEC60747−5−5, 1,140 V Peak Working Insulation
Voltage
• FOD3182, 3 A Output Current, High Speed
MOSFET Gate Drive Optocoupler
• FOD8314, FOD8314T, 1.0 A Output
Current, Gate Drive Optocoupler in
Stretched Body SOP 6−Pin
Application
• AC and Brushless DC Motor Drives
• Industrial Inverter
• Uninterruptible Power Supply Induction Heating
• Isolated IGBT/Power MOSFET Gate Drive
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2022 − Rev. 2
FOD8343/D
FOD8343, FOD8343T
TRUTH TABLE
V
DD
− V “Positive Going”
V
DD
− V “Negative Going”
SS
SS
(Turn−on)
0 V to 30 V
0 V to 7 V
(Turn−off)
0 V to 30 V
0 V to 6.5 V
6.5 V to 9 V
9 V to 30 V
LED
Off
V
O
LOW
LOW
On
On
On
7 V to 9.5 V
9.5 V to 30 V
Transition
HIGH
PIN DEFINITIONS
Pin No.
Symbol
Description
1
2
3
4
5
6
ANODE
N.C
LED Anode
Not Connection
CATHODE
LED Cathode
Negative Supply Voltage
Output Voltage
V
SS
V
O
Positive Supply Voltage
V
DD
PIN CONFIGURATION
6
5
4
1
2
3
ANODE
N.C
VDD
VO
CATHODE
VSS
Figure 1. Pin Configuration
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2
FOD8343, FOD8343T
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC60747−5−5 , this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Characteristics
FOD8343
I−IV
FOD8343T
I−IV
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
<150 V
<300 V
<450 V
<600 V
RMS
RMS
RMS
RMS
I−IV
I−IV
I−III
I−IV
I−III
I−III
Climatic Classification
40/100/21
2
40/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
175
Value
FOD8343T
FOD8343
Symbol
Parameter
Unit
V
PR
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production
1,671
2,137
V
peak
IORM
PR
Test with t = 1 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample
1,426
1,824
V
peak
IORM
PR
Test with t = 10 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
891
6,000
≥8.0
≥7.0
≥0.4
1,140
8,000
≥8.0
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
External Clearance
≥8.0
DTI
Distance Through Insulation (Insulation Thickness)
≥0.4
Safety Limit Values − Maximum Values Allowed in the Event of a Failure,
T
Case Temperature
Input Current
150
200
600
150
200
600
°C
mA
mW
S
I
S,INPUT
P
Output Power
S,OUTPUT
9
9
R
Insulation Resistance at T , V = 500 V
10
10
W
IO
S
IO
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Value
Unit
°C
°C
°C
°C
mA
V
T
STG
Storage Temperature
Operating Temperature
Junction Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 s
25
T
OPR
T
J
T
SOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
Average Input Current
I
F(AVG)
V
R
Reverse Input Voltage
5.0
I
Peak Output Current (Note 1)
Supply Voltage
4
A
O(PEAK)
V
−0.5 to 35
V
DD
O(PEAK)
V
Peak Output Voltage
0 to V
V
DD
t
, t
Input Signal Rise and Fall Time
Input Power Dissipation (Note 2) (Note 4)
Output Power Dissipation (Note 3) (Note 4)
250
45
ns
R(IN) F(IN)
PD
mW
mW
I
PD
500
O
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum pulse width = 10 ms
2. No derating required across operating temperature range.
3. Derate linearly from 25°C at a rate of 5.2 mW/°C.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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3
FOD8343, FOD8343T
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
−40
10
Max
+100
30
Unit
°C
V
T
A
Ambient Operating Temperature
Supply Voltage
V
DD
− V
SS
I
Input Current (ON)
10
16
mA
V
F(ON)
V
F(OFF)
Input Voltage (OFF)
−3.0
0.8
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ISOLATION CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at T = 25°C.)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VAC
V
ISO
Input−Output Isolation Voltage
T = 25°C, R.H. < 50%, t = 1.0 minute,
5000
−
−
A
RMS
I
≤ 20 mA (Note 5) (Note 6)
I−O
11
R
C
Isolation Resistance
Isolation Capacitance
V
V
= 500 V (Note 5)
−
−
10
−
−
W
ISO
ISO
I−O
= 0 V, Frequency = 1.0 MHz (Note 5)
1
pF
I−O
5. Device is considered a two terminal device: pins 1, 2 and 3 are shorted together and pins 4, 5 and 6 are shorted together.
6. 5,000 VAC for 1 minute duration is equivalent to 6,000 VAC for 1 second duration.
RMS
RMS
ELECTRICAL CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground,
DD
SS
T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Conditions
Min
1.1
−
Typ
Max
Unit
V
V
F
Input Forward Voltage
I = 10 mA
1.5
−1.8
−
1.8
−
F
D(V /T )
Temperature Coefficient of Forward Voltage
Input Reverse Breakdown Voltage
Input Capacitance
mV/°C
V
F
A
BV
I
R
= 10 mA
5.0
−
−
R
C
f = 1 MHz, V = 0 V
20
−
−
pF
A
IN
F
I
High Level Output Current (Note 1)
V
OH
V
OH
V
OL
V
OL
= V − 3 V
1.0
3.0
1.0
3.0
−
OH
DD
= V − 10 V
−
−
A
DD
I
OL
Low Level Output Current (Note 1)
= V + 3 V
−
−
A
SS
= V + 10 V
−
−
A
SS
V
High Level Output Voltage (Note 7) (Note 8)
Low Level Output Voltage (Note 7) (Note 8)
High Level Supply Current
I = 10 mA, I = −100 mA
V
DD
− 0.5
V − 0.1
DD
−
V
OH
F
O
V
I = 0 mA, I = 100 mA
−
−
V
SS
+ 0.1
V + 0.5
SS
V
OL
F
O
I
V
= Open, I = 10 to 16 mA
2.9
4.0
4.0
7.5
−
mA
mA
mA
V
DDH
O
O
F
I
Low Level Supply Current
V
= Open, V = −3.0 to 0.8 V
−
2.8
2.0
−
DDL
F
I
Threshold Input Current Low to High
Threshold Input Voltage High to Low
UnderVoltage Lockout Threshold
I
I
= 0 mA, V > 5 V
−
FLH
O
O
V
FHL
= 0 mA, V < 5 V
0.8
7.0
6.5
−
O
O
V
I = 10 mA, V > 5 V
8.3
7.7
0.6
9.5
9.0
−
V
UVLO+
UVLO−
F
O
V
I = 10 mA, V < 5 V
V
F
O
UVLO
UnderVoltage Lockout Threshold Hysteresis
V
HYS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. In this test, V is measured with a dc load current of 100 mA. When driving capacitive load V will approach V as I approaches 0 A.
OH
OH
DD
OH
8. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
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FOD8343, FOD8343T
SWITCHING CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground,
DD
SS
T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Conditions
I =10 mA, R = 10 W, C = 10 nF,
Min
Typ
Max
Unit
t
Propagation Delay Time to Logic
Low Output (Note 9)
50
145
210
ns
PHL
F
g
g
f = 250 kHz, Duty Cycle = 50%
t
Propagation Delay Time to Logic
High Output (Note 10)
50
−
120
35
−
210
65
ns
ns
PLH
PWD
Pulse Width Distortion (Note 11)
| t
PHL
− t
PLH
|
PDD
Propagation Delay Difference
−90
90
(Skew)
Between Any Two Parts (Note 12)
t
Output Rise Time (10% to 90%)
Output Fall Time (90% to 10%)
ULVO Turn On Delay
−
−
38
24
2.0
0.3
−
−
−
−
−
−
ns
ns
R
t
F
t
I = 10 mA, V > 5 V
−
ms
ULVO ON
F
O
t
ULVO Turn Off Delay
I = 10 mA, V < 5 V
−
ms
ULVO OFF
F
O
| CM
|
Common Mode Transient Immunity
at Output High
V
DD
V
CM
= 30 V, I = 10 mA to 16 mA,
50
kV/ms
H
F
= 2000 V, T = 25°C (Note 13)
A
| CM |
Common Mode Transient Immunity
at Output Low
V
= 30 V, V = 0 V, V = 2000 V,
50
−
−
kV/ms
L
DD
F
CM
T = 25°C (Note 14)
A
9. Propagation delay t
signal.
is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the V
O
PHL
10.Propagation delay t
is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the V signal.
O
PLH
11. PWD is defined as | t
− t
PLH
| for any given device.
PHL
12.The difference between t
and t
between any two FOD8343 parts under the same operating conditions, with equal loads.
PHL
PLH
13.Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, V , to ensure that the output remains high (i.e., V > 15.0 V).
CM
O
14.Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
V
CM
, to ensure that the output remains low (i.e., V < 1.0 V).
O
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FOD8343, FOD8343T
TYPICAL PERFORMANCE CHARACTERISTICS
0
−2
0.00
−0.05
−0.10
−0.15
−0.20
−4
−6
T = 100°C 25°C −40°C
A
V
− V = 15 V to 30 V
SS
DD
−8
−0.25
−0.30
V
− V = 15 V to 30 V
I = 10 mA to 16 mA
F
I = −100 mA
O
DD
SS
I = 10 mA
F
−10
0
1
2
3
4
5
6
7
−40 −20
0
20
40
60
80
100
100
30
I
, HIGH LEVEL OUTPUT CURRENT (A)
T , AMBIENT TEMPERATURE (°C)
OH
A
Figure 2. High Level Output Voltage Drop vs.
High Level Output Current
Figure 3. High Level Output Voltage Drop vs.
Ambient Temperature
10
0.30
V
DD
− V = 15 V to 30 V
V
− V = 15 V to 30 V
SS
DD SS
I = 0 A
V = −3 to 0.8 V
F
= 100 mA
F
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
I
O
T = 100°C 25°C
A
−40°C
0
1
2
3
4
5
6
7
−40 −20
0
20
40
60
80
I
OL
, LOW LEVEL OUTPUT CURRENT (A)
T , AMBIENT TEMPERATURE (°C)
A
Figure 4. Low Level Output Voltage Drop vs.
Low Level Output Current
Figure 5. Low Level Output Voltage Drop vs.
Ambient Temperature
3.6
3.6
3.2
I
(30 V)
DDH
3.2
2.8
2.4
2.0
I
(30 V)
DDL
I
DDH
2.8
2.4
2.0
I
I
(15 V)
DDL
DDH
I
(15 V)
DDL
I = 0 A (for I
I = 10 mA (for I
= 0 V
T = 25°C
)
F
DDL
)
V
− V = 15 V to 30 V
F
V
DDH
DD
SS
I = 0 A (for I
)
SS
F
DDL
I = 10 mA (for I
F
)
A
DDH
−40 −20
0
20
40
60
80
100
15
20
, SUPPLY VOLTAGE (V)
DD
25
T , AMBIENT TEMPERATURE (°C)
A
V
Figure 6. Supply Current vs. Ambient Temperature
Figure 7. Supply Current vs. Supply Voltage
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FOD8343, FOD8343T
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
2.5
2.0
1.5
1.0
400
V
V
− V = 15 V to 30 V
= Open
I = 10 mA to 16 mA
F
R = 10 W C = 10 nF
g g
f = 250 kHz 50% Duty Cycle
DD
SS
O
300
200
100
0
t
t
PHL
PLH
−40 −20
0
20
40
60
80
100
15
18
21
24
27
30
T , AMBIENT TEMPERATURE (°C)
A
V
DD
− V , SUPPLY VOLTAGE (V)
SS
Figure 8. Low to High Input Current Threshold
vs. Ambient Temperature
Figure 9. Propagation Delay vs.
Supply Voltage
400
400
300
200
100
0
V
− V = 15 V to 30 V
I = 10 mA to 16 mA
F
DD
SS
R = 10 W C = 10 nF
f = 250 kHz 50% Duty Cycle
V − V = 15 V to 30 V
DD SS
g
g
R = 10 W C = 10 nF
g g
f = 250 kHz 50% Duty Cycle
300
200
100
0
t
t
PHL
PHL
t
t
PLH
PLH
6
8
10
12
14
16
−40 −20
0
20
40
60
80
100
I , LED FORWARD CURRENT (mA)
F
T , AMBIENT TEMPERATURE (°C)
A
Figure 10. Propagation Delay vs.
LED Forward Current
Figure 11. Propagation Delay vs.
Ambient Temperature
400
300
200
100
0
400
300
200
100
0
I = 10 mA to 16 mA
I = 10 mA to 16 mA
F
F
V
DD
− V = 15 V to 30 V
V − V = 15 V to 30 V
DD SS
SS
C = 10 nF
R = 10 W
g
g
f = 250 kHz 50% Duty Cycle
f = 250 kHz 50% Duty Cycle
t
t
t
t
PHL
PHL
PLH
PLH
0
10
20
30
40
50
0
20
40
60
80
100
R , SERIES LOAD RESISTANCE (W)
g
C , SERIES LOAD CAPACITANCE (nF)
g
Figure 12. Propagation Delay vs.
Series Load Resistance
Figure 13. Propagation Delay vs.
Series Load Capacitance
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FOD8343, FOD8343T
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
100
35
30
25
20
15
10
5
V
− V = 30 V
SS
DD
T = 25°C
A
10
1
0.1
T = 100°C
A
25°C
−40°C
0.01
0
0.001
0
1
2
3
4
5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
F
Figure 14. Transfer Characteristics
Figure 15. Input Forward Current vs.
Forward Voltage
15
10
5
(8.30 V)
(7.80 V)
0
0
5
10
15
V
DD
− V , SUPPLY VOLTAGE (V)
SS
Figure 16. Under Voltage Lockout
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FOD8343, FOD8343T
TEST CIRCUITS
1
2
6
IOL
I = 0 mA
PW = 10 ms
1 mF 47 mF
F
+
−
VOL
5
VDD
+
−
1 mF 47 mF
VIN
VO
3
4
Figure 17. IOL Test Circuit
1
2
6
VO
1 mF 47 mF
IOH
+
−
I = 10 mA
PW = 10 ms
F
+
−
VOH
5
1 mF 47 mF
VDD
VIN
3
4
Figure 18. IOH Test Circuit
1
2
6
1 mF
I = 10 mA
F
+
−
VOH
5
VDD
100 mA
3
4
Figure 19. VOH Test Circuit
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FOD8343, FOD8343T
TEST CIRCUITS (Continued)
1
2
6
1 mF
100 mA
+
−
5
VOL
VDD
3
4
Figure 20. VOL Test Circuit
IDDH
1
2
6
5
1 mF
I = 10 mA to 16 mA
F
+
−
VO
VDD
3
4
Figure 21. IDDH Test Circuit
IDDL
1
2
6
5
1 mF
V = −3.0 V to 0.8 V
F
+
−
VO
+
−
VDD
3
4
Figure 22. IDDL Test Circuit
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FOD8343, FOD8343T
TEST CIRCUITS (Continued)
1
2
6
1 mF
IF
+
−
5
VO > 5 V
VDD
3
4
Figure 23. IFLH Test Circuit
1
2
6
5
1 mF
VF
+
−
+
−
VO < 5 V
VDD
3
4
Figure 24. VFHL Test Circuit
1
2
6
5
1 mF
I = 10 mA
F
+
−
VO = 5 V
VDD Ramp
3
4
Figure 25. IDDH Test Circuit
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FOD8343, FOD8343T
TEST CIRCUITS (Continued)
1
2
6
5
1 mF
VO
f = 10 kHz
Duty Cycle 50%
10 nF
10 W
+
−
VDD
IF MON
3
4
IF
tR
tF
50%
10%
VO
tPLH
tPHL
Figure 26. tPLH, tPHL, tR and tF Test Circuit and Waveforms
IF
A
100 W
1
2
6
5
1 mF
B
5 V
+
−
+
−
VO
VDD = 30 V
100 W
3
4
VCM = 2,000 V
VCM
0 V
VO
Dt
VOH
Switch at A: IF = 10 mA
VO
VOL
Switch at B: IF = 10 mA
Figure 27. CMR Test Circuit and Waveforms
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FOD8343, FOD8343T
REFLOW PROFILE
Maximum Ramp−up Rate = 35°C/s
Maximum Ramp−down Rate = 65°C/s
TP
TL
260
240
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (T
)
smin
Temperature Maximum (T
)
200°C
smax
Time (t ) from (T
to T )
smax
60 s to 120 s
3°C/second maximum
217°C
S
smin
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 s to 150 s
260°C +0°C / −5°C
30 s
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−Down Rate (T to T )
6°C/s maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
Figure 28. Reflow Profile
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13
FOD8343, FOD8343T
ORDERING INFORMATION
Device Order Number
FOD8343
†
Package Type
Shipping
Stretched Body SOP 6−Pin
Stretched Body SOP 6−Pin
100 Units / Tube
1,000 / Tape & Reel
100 Units / Tube
FOD8343R2
FOD8343V
Stretched Body SOP 6−Pin, DIN
EN/IEC60747−5−5 Option
FOD8343R2V
Stretched Body SOP 6−Pin, DIN
EN/IEC60747−5−5 Option
1,000 / Tape & Reel
FOD8343T
Stretched Body SOP 6−Pin, Wide Lead
Stretched Body SOP 6−Pin, Wide Lead
100 Units / Tube
1,000 / Tape & Reel
100 Units / Tube
FOD8343TR2
FOD8343TV
Stretched Body SOP 6−Pin, Wide Lead,
DIN EN/IEC60747−5−5 Option
FOD8343TR2V
Stretched Body SOP 6−Pin, Wide Lead,
DIN EN/IEC60747−5−5 Option
1,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: All packages are lead free per JEDEC: J−STD−020B standard.
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14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC6
CASE 751EL
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13745G
SOIC6
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC6 W
CASE 751EM
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13749G
SOIC6 W
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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