FOD852SD [ONSEMI]
4 引脚 DIP 光电达林顿输出光耦合器;
| 型号： | FOD852SD |
| 厂家： | 
ONSEMI |
| 描述： | 4 引脚 DIP 光电达林顿输出光耦合器 PC 光电二极管 输出元件 |
| 文件： | 总15页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2017
FOD852
4-Pin DIP Photodarlington Output Optocoupler
Features
Description
• High Current Transfer Ratio: 1000% Minimum
• Safety and Regulatory Approvals
– UL1577, 5,000 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
The FOD852 consists of gallium arsenide infrared
emitting diode driving a silicon photodarlington output
(with integral base-emitter resistor) in a 4-pin dual in-line
package.
Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Functional Block Diagram
ANODE 1
4 COLLECTOR
4
CATHODE 2
3 EMITTER
1
Figure 1. Schematic
Figure 2. Package Outlines
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–III
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
30/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Vpeak
Vpeak
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
,
1360
VPR
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
1560
VIORM
VIOTM
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
850
6000
7
Vpeak
Vpeak
mm
mm
mm
°C
External Clearance
7
DTI
TS
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
0.4
175
IS,INPUT
Input Current(1)
400
mA
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500 V(1)
Note:
700
> 1011
mW
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FOD852 Rev. 1.5
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
Symbol
Total Device
TSTG
TOPR
TJ
Parameter
Value
Units
Storage Temperature
Operating Temperature
Junction Temperature
-55 to +125
-30 to +100
-55 to +100
260 for 10 seconds
200
°C
°C
°C
TSOL
PTOT
Input
IF
Lead Solder Temperature
°C
Total Device Power Dissipation
mW
Continuous Forward Current
Reverse Voltage
50
6
mA
V
VR
PD
LED Power Dissipation
70
mW
Output
VCEO
VECO
IC
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
300
0.1
V
V
150
150
mA
mW
PC
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
3
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Input
VF
Parameter
Test Conditions
Min. Typ.
Max. Unit
Forward Voltage
IF = 10 mA
1.2
30
1.4
10
V
IR
Reverse Current
VR = 4 V
µA
pF
Ct
Terminal Capacitance
V = 0, f = 1 kHz
250
Output
ICEO
Collector Dark Current
VCE = 200 V, IF = 0
IC = 0.1 mA, IF = 0
IE = 10 µA, IF = 0
200
nA
V
BVCEO
BVECO
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
300
0.1
V
Transfer Characteristics
Symbol
IC
DC Characteristic
Test Conditions
Min.
Typ. Max. Unit
Collector Current
Current Transfer Ratio(2)
10
40
150
mA
%
IF = 1 mA, VCE = 2 V
CTR
1,000 4,000 15,000
Collector-Emitter
Saturation Voltage
VCE(SAT)
IF = 20 mA, IC = 100 mA
1.2
V
fC
tR
tF
Cut-Off Frequency
VCE = 2 V, IC = 20 mA, RL = 100 , -3 dB
1
7
kHz
µs
Response Time (Rise)
Response Time (Fall)
100
20
300
100
VCE = 2 V, IC = 20 mA, RL = 100
µs
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Units
Input-Output Isolation
Voltage
VISO
f = 60 Hz, t = 1 minute, II-O 2 µA
5000
VACRMS
RISO
CISO
Isolation Resistance
VI-O = 500 VDC
1012
0.6
Isolation Capacitance VI-O = 0, f = 1 MHz
1.0
pf
Note:
2. Current Transfer Ratio (CTR) = IC / IF x 100%.
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
4
Typical Electrical/Optical Characteristic Curves
TA = 25°C unless otherwise specified.
60
50
40
30
20
10
0
200
150
100
50
0
-30
-30
0
25
50
75 100 125
0
20
40
60
80 100
AMBIENT TEMPERATURE T (°C)
AMBIENT TEMPERATURE T (°C)
A
A
Figure 3. Forward Current
vs. Ambient Temperature
Figure 4. Collector Power Dissipation
vs. Ambient Temperature
5
4.5
4
100
10
1
Ic=5 mA
10 mA
30 mA
100°C
50 mA
70 mA
100 mA
3.5
3
80°C
60°C
40°C
20°C
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
FORWARD CURRENT I (mA)
FORWARD VOLTAGE V (V)
F
F
Figure 5. Collector-Emitted Saturation Voltage
vs. Forward Current
Figure 6. Forward Current vs. Forward Voltage
7000
100
2.5 mA
10 mA
V
= 2 V
CE
6000
5000
4000
3000
2000
1000
2 mA
5 mA
3 mA
80
60
40
20
0
1.5 mA
1 mA
PC(MAX.)
I
= 0.5 mA
F
0
0.1
0
1
2
3
4
5
1
10
COLLECTOR-EMITTER VOLTAGE V
(V)
FORWARD CURRENT I (mA)
CE
F
Figure 8. Collector Current
vs. Collector-Emitter Voltage
Figure 7. Current Transfer Ratio
vs. Forward Current
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
5
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
1.0
0.8
0.6
0.4
0.2
0
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
I
F = 1 mA
IF = 20 mA
IC = 100 mA
VCE = 2 V
20
40
60
80
100
20
40
60
80
100
AMBIENT TEMPERATURE T (°C)
AMBIENT TEMPERATURE T (°C)
A
A
Figure 10. Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Figure 9. Relative Current Transfer Ratio
vs. Ambient Temperature
1000
1000
VCE = 200 V
VCE = 2 V
IC = 20 mA
500
tr
tf
200
100
50
100
20
10
5
td
ts
2
1
10
20
0.1
1
10
40
60
80
100
AMBIENT TEMPERATURE T (°C)
LOAD RESISTANCE R (kΩ)
A
L
Figure 11. Collector Dark Current
vs. Ambient Temperature
Figure 12. Response Time
vs. Load Resistance
V
C
= 2V
0
-5
CE
I
= 2mA
-10
-15
-20
-25
100Ω
10Ω
R =1kΩ
L
0.1
1
10
100
500
FREQUENCY f (kHz)
Figure 13. Frequency Response
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
6
Test Circuits
Input
Vcc
L
Output
R
R
10%
90%
D
Input
Output
ts
td
tr
tf
Figure 14. Test Circuit for Response Time
Vcc
R
L
R
D
Output
Figure 15. Test Circuit for Frequency Response
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
7
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
Figure 16. Reflow Profile
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
8
Ordering Information
Part Number
Package
Packing Method
Tube (100 units per tube)
FOD852
DIP 4-Pin
FOD852S
SMT 4-Pin (Lead Bend)
SMT 4-Pin (Lead Bend)
Tube (100 units per tube)
FOD852SD
FOD852300
FOD8523S
FOD8523SD
FOD852300W
Tape and Reel (1,000 units per reel)
Tube (100 units per tube)
DIP 4-Pin, DIN EN/IEC60747-5-5 option
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option
Tube (100 units per tube)
Tape and Reel (1,000 units per reel)
DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube)
Marking Information
4
5
6
V X ZZ Y
852
3
2
1
Definitions
1
2
3
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on parts ordered with
this option)
4
5
6
One-Digit Year Code, e.g., ‘5’
Two-Digit Work Week, Ranging from ‘01’ to ‘53’
Assembly Package Code
Y = Manufactured in Thailand
YA = Manufactured in China
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
9
Carrier Tape Specifications
P
P
0
2
Ø1.55 0.05
1.75 0.1
F
W
B0
A0
P
1
0.3 0.05
K0
Figure 17. Carrier Tape Specification
Description
Symbol
Dimensions in mm (inches)
16 ± 0.3 (0.63)
W
Tape wide
P0
Pitch of sprocket holes
4 ± 0.1 (0.15)
F
P2
Distance of compartment
7.5 ± 0.1 (0.295)
2 ± 0.1 (0.079)
P1
A0
B0
K0
Distance of compartment to compartment
Compartment
12 ± 0.1 (0.472)
10.45 ± 0.1 (0.411)
5.30 ± 0.1 (0.209)
4.25 ± 0.1 (0.167)
©2006 Fairchild Semiconductor Corporation
FOD852 Rev. 1.5
www.fairchildsemi.com
13
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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