FODM1007 [ONSEMI]

单沟道,直流感应输入,采用拉伸体 SOP 4 引脚的光电晶体管光耦合器;
FODM1007
型号: FODM1007
厂家: ONSEMI    ONSEMI
描述:

单沟道,直流感应输入,采用拉伸体 SOP 4 引脚的光电晶体管光耦合器

输出元件 晶体管 光电晶体管
文件: 总9页 (文件大小:210K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Single Channel, DC Sensing  
Input, Phototransistor  
Optocoupler In Stretched  
Body SOP 4-Pin  
FODM100x Series  
www.onsemi.com  
Description  
The FODM100x Series, single channel, DC sensing input,  
optocoupler consists of one gallium arsenide (GaAs) infrared light  
emitting diode optically coupled to one phototransistor, in a stretched  
body SOP 4pin package. The inputoutput isolation voltage, V , is  
ISO  
rated at 5,000 VAC  
.
RMS  
SSOP4 / LSOP04  
CASE 565BH  
Features  
8 mm Creepage and Clearance Distance, and 0.4 mm Insulation  
Distance to Achieve Reliable and High Voltage Insulation  
Safety and Regulatory Approvals  
MARKING DIAGRAM  
UL1577, 5,000 VAC  
for 1 min  
RMS  
ON  
100x  
DIN_EN/IEC6074755, 890 V_Peak Working Voltage  
VXYYL  
High Breakdown Collector to Emitter Voltage, BV  
= 70 V  
CEO  
Minimum  
Extended Industrial Temperate Range, 40 to 110°C  
100x = Specific Device Code (x = 7, 8, 9)  
V
= DIN EN/IEC6074755 Option (only  
appears on component ordered with  
this option)  
Current Transfer Ratio at I = 5 mA, V = 5 V, T = 25°C  
F
CE  
A
FODM1007: 80 to 160%  
FODM1008: 130 to 260%  
FODM1009: 200 to 400%  
X
= Last Digit Year Code  
YY  
L
= Two Digit Work Week  
= Assembly Package Code  
These are PbFree Devices  
Applications  
PIN CONNECTIONS  
Primarily Suited for DCDC Converters  
For Ground Loop Isolation, Signal to Noise Isolation  
Communications – Adapters, Chargers  
1
4
COLLECTOR  
ANODE  
Consumer – Appliances, SetTop Boxes  
Industrial – Power Supplies, Motor Control, Programmable Logic  
Control  
CATHODE 2  
3 EMITTER  
Related Resources  
https://www.onsemi.com/products/optoelectronics/  
www.onsemi.com/datsheets/HM/HMHA2801.pdf  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 7 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2021 Rev. 3  
FODM1009/D  
FODM100x Series  
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation”  
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)  
Parameter  
Characteristics  
Installation Classifications per DIN VDE  
0110/1.89 Table 1, For Rated Mains Voltage  
<150 V  
<300 V  
I–IV  
I–III  
RMS  
RMS  
Climatic Classification  
40/110/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
InputtoOutput Test Voltage, Method A, V  
Value  
Unit  
V
PR  
x 1.6 = V  
,
1,426  
V
peak  
IORM  
PR  
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC  
m
InputtoOutput Test Voltage, Method B, V  
x 1.875 = V  
,
1,671  
V
peak  
IORM  
PR  
100% Production Test with t = 1 s, Partial Discharge < 5 pC  
m
V
Maximum Working Insulation Voltage  
Highest Allowable OverVoltage  
External Creepage  
890  
6.000  
8.0  
8.0  
0.4  
150  
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
°C  
External Clearance  
DTI  
Distance Through Insulation (Insulation Thickness)  
Case Temperature (Note 1)  
Input Current (Note 1)  
T
S
I
200  
mA  
mW  
W
S,INPUT  
P
Output Power (Note 1)  
300  
S,OUTPUT  
9
R
Insulation Resistance at T , V = 500 V (Note 1)  
>10  
IO  
S
IO  
1. Safety limit values – maximum values allowed in the event of a failure.  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
Symbol  
Parameter  
Value  
Unit  
TOTAL PACKAGE  
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
55 to +150  
40 to +110  
40 to +125  
°C  
°C  
°C  
STG  
OPR  
T
T
J
EMITTER  
I
Continuous Forward Current  
50  
1
mA  
A
F(avg)  
I
Continuous Forward Current (1 ms Pulse, 300 pps)  
F(pk)  
V
R
Reverse Input Voltage  
6
V
PD  
LED Power Dissipation @ T = 25°C (Note 2)  
100  
0.9  
mW  
mW/°C  
LED  
A
Derate Above 25°C  
DETECTOR  
I
Continuous Collector Current  
CollectorEmitter Voltage  
EmitterCollector Voltage  
50  
70  
mA  
V
C
V
V
CEO  
ECO  
7
V
PD  
Detector Power Dissipation @ T = 25°C (Note 2)  
150  
1.47  
mW  
mW/°C  
C
A
Derate Above 25°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside  
these ratings.  
www.onsemi.com  
2
 
FODM100x Series  
ELECTRICAL CHARACTERISTICS  
T = 25°C unless otherwise specified.  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Symbol  
Parameter  
Device  
Test Conditions  
Min  
Typ  
Max  
Unit  
EMITTER  
V
Forward Voltage  
Reverse Current  
All  
All  
I = 50 mA  
1.4  
1.6  
10  
V
F
F
I
R
V
R
= 4 V  
mA  
DETECTOR  
BV  
Breakdown Voltage  
Collector to Emitter  
All  
I
C
= 1 mA, I = 0  
70  
V
CEO  
F
BV  
Emitter to Collector  
Collector Dark Current  
Capacitance  
All  
All  
All  
I = 0.1 mA, I = 0  
7
5
100  
V
ECO  
E
F
I
V
CE  
CE  
= 70 V, I = 0  
nA  
pF  
CEO  
F
C
V
= 0 V, f = 1 MHz  
CE  
DC TRANSFER CHARACTERISTICS  
Symbol  
Parameter  
Device  
Test Conditions  
Min  
80  
Typ  
Max  
160  
260  
400  
0.3  
Unit  
CTR  
DC Current Transfer Ratio FODM1007  
FODM1008  
I = 5 mA, V = 5 V  
%
F
CE  
130  
200  
FODM1009  
V
Saturation Voltage  
All  
I = 10 mA, I = 1 mA  
V
CE(SAT)  
F
C
AC TRANSFER CHARACTERISTICS  
Symbol  
Parameter  
Device  
Test Conditions  
Min  
Typ  
Max  
Unit  
t
Rise Time  
All  
I
I
= 2 mA, V = 5 V, R = 100 W  
5.7  
18.0  
ms  
r
C
CE  
L
(NonSaturated)  
t
Fall Time (NonSaturated) All  
= 2 mA, V = 5 V, R = 100 W  
8.5  
18.0  
f
C
CE  
L
ISOLATION CHARACTERISTICS  
Symbol  
Parameter  
Device  
Test Conditions  
T = 25°C, R.H. < 50%,  
Min  
Typ  
Max  
Unit  
V
ISO  
Steady State Isolation  
Voltage  
All  
5,000  
VAC  
RMS  
A
t =1.0 min., I  
20 mA  
IO  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
3
FODM100x Series  
TYPICAL PERFORMANCE CHARACTERISTICS  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
200  
150  
100  
50  
NORMALIZED TO:  
T = 25°C, V = 0.4 V  
A
CE  
DETECTOR  
EMITTER  
I = 10 mA  
F
I = 5 mA  
F
I = 2 mA  
F
I = 1 mA  
F
0
40  
60  
20  
0
20  
40  
60  
80  
100 120  
40  
100  
60  
20  
0
20  
40  
60  
80  
T – AMBIENT TEMPERATURE (°C)  
A
T – AMBIENT TEMPERATURE (°C)  
A
Figure 2. Saturated Normalized Current Transfer  
Ratio vs. Ambient temperature  
Figure 1. Power Dissipation vs. Ambient Temperature  
50  
40  
30  
20  
10  
0
1.6  
NORMALIZED TO:  
T = 25°C, V = 5 V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
A
CE  
110°C  
I = 10 mA  
F
I = 5 mA  
F
55°C  
25°C  
I = 2 mA  
F
I = 1 mA  
F
40  
100  
60  
20  
0
20  
40  
60  
80  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
V – FORWARD VOLTAGE (V)  
F
T – AMBIENT TEMPERATURE (°C)  
A
Figure 4. Forward Current vs. Forward Voltage  
Figure 3. NonSaturated Normalized Current Transfer  
Ratio vs. Ambient temperature  
10  
100  
NORMALIZED TO:  
I = 5 mA, V = 5 V  
T = 25°C  
A
NORMALIZED TO:  
I = 5 mA, V = 5 V  
T = 25°C  
A
F
CE  
F
CE  
10  
1
1
0.1  
0.1  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
F
FORWARD CURRENT (mA)  
I
F
FORWARD CURRENT (mA)  
Figure 5. Normalized Current Collector  
vs. Forward Current  
Figure 6. Normalized Current Transfer Ratio  
vs. Forward Current  
www.onsemi.com  
4
FODM100x Series  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
100000  
10000  
1000  
100  
1000  
T = 25°C  
A
I = 50 mA  
F
I = 20 mA  
F
I = 10 mA  
F
100  
V
CE  
= 40 V  
10  
1
10  
V
CE  
= 20 V  
1
I = 5 mA  
F
I = 2 mA  
F
I = 1 mA  
F
0.1  
0.1  
0.1  
20  
40  
60  
80  
100  
120  
1
10  
V
CE  
– COLLECTOR EMITTER VOLTAGE (V)  
T – AMBIENT TEMPERATURE (°C)  
A
Figure 8. Collector Current vs. Collector  
Emitter Voltage  
Figure 7. Collector Dark Current vs. Ambient  
Temperature  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
NONSATURATED OPERATION  
SATURATED OPERATION  
V = 5 V, R = 1 kW  
S L  
V
S
= 5 V, R = 100 W  
L
t
OFF  
6
4
t
ON  
2
t
OFF  
t
ON  
0
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I
F,  
FORWARD CURRENT (mA)  
I
C,  
COLLECTOR CURRENT (mA)  
Figure 10. Turn On / Turn Off Time vs. Forward  
Current  
Figure 9. Turn On / Turn Off Time vs. Collector  
Current  
www.onsemi.com  
5
FODM100x Series  
REFLOW PROFILE  
Maximum Rampup Rate = 3°C/s  
Maximum Rampdown Rate = 6°C/s  
T
P
260  
240  
t
P
T
L
220  
200  
180  
160  
140  
120  
T
smax  
T
L
Preheat Area  
T
smin  
t
s
100  
80  
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
Figure 11. Reflow Profile  
Table 1. REFLOW PROFILE  
Prole Freature  
Temperature Minimum (T  
PbFree Assembly Prole  
150°C  
)
smin  
Temperature Maximum (T  
)
200°C  
smax  
Time (t ) from (T  
to T )  
smax  
60 – 120 seconds  
3°C/second maximum  
217°C  
S
smin  
Rampup Rate (t to t )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60 – 150 seconds  
260°C +0°C / –5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Rampdown Rate (T to T )  
6°C/second maximum  
8 minutes maximum  
P
L
Time 25°C to Peak Temperature  
www.onsemi.com  
6
FODM100x Series  
ORDERING INFORMATION  
Part Number  
Package  
Shipping  
FODM1007  
Stretched Body SOP 4Pin  
100 Units / Tube  
3000 / Tape & Reel  
100 Units / Tube  
FODM1007R2  
Stretched Body SOP 4Pin  
FODM1007V  
Stretched Body SOP 4Pin,  
DIN EN/IEC6074755 Option  
FODM1007R2V  
Stretched Body SOP 4Pin,  
DIN EN/IEC6074755 Option  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
NOTE: The product orderable part number system listed in this table also applies to the FODM1008, FODM1009 products.  
www.onsemi.com  
7
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SSOP4 / LSOP04  
CASE 565BH  
ISSUE O  
DATE 31 JAN 2017  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13754G  
SSOP4 / LSOP04  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
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