FODM1009 [ONSEMI]
单沟道,直流感应输入,光电晶体管光耦合器,采用拉伸体 SOP 4 引脚封装;型号: | FODM1009 |
厂家: | ONSEMI |
描述: | 单沟道,直流感应输入,光电晶体管光耦合器,采用拉伸体 SOP 4 引脚封装 输出元件 晶体管 光电晶体管 |
文件: | 总9页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Single Channel, DC Sensing
Input, Phototransistor
Optocoupler In Stretched
Body SOP 4-Pin
FODM100x Series
www.onsemi.com
Description
The FODM100x Series, single channel, DC sensing input,
optocoupler consists of one gallium arsenide (GaAs) infrared light
emitting diode optically coupled to one phototransistor, in a stretched
body SOP 4−pin package. The input−output isolation voltage, V , is
ISO
rated at 5,000 VAC
.
RMS
SSOP4 / LSOP04
CASE 565BH
Features
• ≥ 8 mm Creepage and Clearance Distance, and ≥ 0.4 mm Insulation
Distance to Achieve Reliable and High Voltage Insulation
• Safety and Regulatory Approvals
MARKING DIAGRAM
• UL1577, 5,000 VAC
for 1 min
RMS
ON
100x
• DIN_EN/IEC60747−5−5, 890 V_Peak Working Voltage
VXYYL
• High Breakdown Collector to Emitter Voltage, BV
= 70 V
CEO
Minimum
• Extended Industrial Temperate Range, −40 to 110°C
100x = Specific Device Code (x = 7, 8, 9)
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
• Current Transfer Ratio at I = 5 mA, V = 5 V, T = 25°C
F
CE
A
• FODM1007: 80 to 160%
• FODM1008: 130 to 260%
• FODM1009: 200 to 400%
X
= Last Digit Year Code
YY
L
= Two Digit Work Week
= Assembly Package Code
• These are Pb−Free Devices
Applications
PIN CONNECTIONS
• Primarily Suited for DC−DC Converters
• For Ground Loop Isolation, Signal to Noise Isolation
• Communications – Adapters, Chargers
1
4
COLLECTOR
ANODE
• Consumer – Appliances, Set−Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic
Control
CATHODE 2
3 EMITTER
Related Resources
• https://www.onsemi.com/products/optoelectronics/
• www.onsemi.com/datsheets/HM/HMHA2801.pdf
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2021 − Rev. 3
FODM1009/D
FODM100x Series
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
<150 V
<300 V
I–IV
I–III
RMS
RMS
Climatic Classification
40/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
1,426
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1,671
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
890
6.000
≥8.0
≥8.0
≥0.4
150
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
T
S
I
200
mA
mW
W
S,INPUT
P
Output Power (Note 1)
300
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
Junction Temperature
−55 to +150
−40 to +110
−40 to +125
°C
°C
°C
STG
OPR
T
T
J
EMITTER
I
Continuous Forward Current
50
1
mA
A
F(avg)
I
Continuous Forward Current (1 ms Pulse, 300 pps)
F(pk)
V
R
Reverse Input Voltage
6
V
PD
LED Power Dissipation @ T = 25°C (Note 2)
100
0.9
mW
mW/°C
LED
A
Derate Above 25°C
DETECTOR
I
Continuous Collector Current
Collector−Emitter Voltage
Emitter−Collector Voltage
50
70
mA
V
C
V
V
CEO
ECO
7
V
PD
Detector Power Dissipation @ T = 25°C (Note 2)
150
1.47
mW
mW/°C
C
A
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
www.onsemi.com
2
FODM100x Series
ELECTRICAL CHARACTERISTICS
T = 25°C unless otherwise specified.
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
EMITTER
V
Forward Voltage
Reverse Current
All
All
I = 50 mA
−
−
1.4
1.6
10
V
F
F
I
R
V
R
= 4 V
−
mA
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
All
I
C
= 1 mA, I = 0
70
−
−
V
CEO
F
BV
Emitter to Collector
Collector Dark Current
Capacitance
All
All
All
I = 0.1 mA, I = 0
7
−
−
−
−
5
−
100
−
V
ECO
E
F
I
V
CE
CE
= 70 V, I = 0
nA
pF
CEO
F
C
V
= 0 V, f = 1 MHz
CE
DC TRANSFER CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
80
Typ
−
Max
160
260
400
0.3
Unit
CTR
DC Current Transfer Ratio FODM1007
FODM1008
I = 5 mA, V = 5 V
%
F
CE
130
200
−
−
FODM1009
−
V
Saturation Voltage
All
I = 10 mA, I = 1 mA
−
V
CE(SAT)
F
C
AC TRANSFER CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
t
Rise Time
All
I
I
= 2 mA, V = 5 V, R = 100 W
−
5.7
18.0
ms
r
C
CE
L
(Non−Saturated)
t
Fall Time (Non−Saturated) All
= 2 mA, V = 5 V, R = 100 W
−
8.5
18.0
f
C
CE
L
ISOLATION CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
T = 25°C, R.H. < 50%,
Min
Typ
Max
Unit
V
ISO
Steady State Isolation
Voltage
All
5,000
−
−
VAC
RMS
A
t =1.0 min., I
≤ 20 mA
I−O
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FODM100x Series
TYPICAL PERFORMANCE CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
150
100
50
NORMALIZED TO:
T = 25°C, V = 0.4 V
A
CE
DETECTOR
EMITTER
I = 10 mA
F
I = 5 mA
F
I = 2 mA
F
I = 1 mA
F
0
−40
−60
−20
0
20
40
60
80
100 120
−40
100
−60
−20
0
20
40
60
80
T – AMBIENT TEMPERATURE (°C)
A
T – AMBIENT TEMPERATURE (°C)
A
Figure 2. Saturated Normalized Current Transfer
Ratio vs. Ambient temperature
Figure 1. Power Dissipation vs. Ambient Temperature
50
40
30
20
10
0
1.6
NORMALIZED TO:
T = 25°C, V = 5 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
A
CE
110°C
I = 10 mA
F
I = 5 mA
F
−55°C
25°C
I = 2 mA
F
I = 1 mA
F
−40
100
−60
−20
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V – FORWARD VOLTAGE (V)
F
T – AMBIENT TEMPERATURE (°C)
A
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Non−Saturated Normalized Current Transfer
Ratio vs. Ambient temperature
10
100
NORMALIZED TO:
I = 5 mA, V = 5 V
T = 25°C
A
NORMALIZED TO:
I = 5 mA, V = 5 V
T = 25°C
A
F
CE
F
CE
10
1
1
0.1
0.1
0.01
0.001
0.01
0.1
1
10
100
0.1
1
10
100
I
F
− FORWARD CURRENT (mA)
I
F
− FORWARD CURRENT (mA)
Figure 5. Normalized Current Collector
vs. Forward Current
Figure 6. Normalized Current Transfer Ratio
vs. Forward Current
www.onsemi.com
4
FODM100x Series
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
100000
10000
1000
100
1000
T = 25°C
A
I = 50 mA
F
I = 20 mA
F
I = 10 mA
F
100
V
CE
= 40 V
10
1
10
V
CE
= 20 V
1
I = 5 mA
F
I = 2 mA
F
I = 1 mA
F
0.1
0.1
0.1
20
40
60
80
100
120
1
10
V
CE
– COLLECTOR EMITTER VOLTAGE (V)
T – AMBIENT TEMPERATURE (°C)
A
Figure 8. Collector Current vs. Collector
Emitter Voltage
Figure 7. Collector Dark Current vs. Ambient
Temperature
10
8
40
35
30
25
20
15
10
5
NON−SATURATED OPERATION
SATURATED OPERATION
V = 5 V, R = 1 kW
S L
V
S
= 5 V, R = 100 W
L
t
OFF
6
4
t
ON
2
t
OFF
t
ON
0
0
0
4
8
12
16
20
0
4
8
12
16
20
I
F,
FORWARD CURRENT (mA)
I
C,
COLLECTOR CURRENT (mA)
Figure 10. Turn On / Turn Off Time vs. Forward
Current
Figure 9. Turn On / Turn Off Time vs. Collector
Current
www.onsemi.com
5
FODM100x Series
REFLOW PROFILE
Maximum Ramp−up Rate = 3°C/s
Maximum Ramp−down Rate = 6°C/s
T
P
260
240
t
P
T
L
220
200
180
160
140
120
T
smax
T
L
Preheat Area
T
smin
t
s
100
80
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Figure 11. Reflow Profile
Table 1. REFLOW PROFILE
Profile Freature
Temperature Minimum (T
Pb−Free Assembly Profile
150°C
)
smin
Temperature Maximum (T
)
200°C
smax
Time (t ) from (T
to T )
smax
60 – 120 seconds
3°C/second maximum
217°C
S
smin
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
www.onsemi.com
6
FODM100x Series
ORDERING INFORMATION
Part Number
†
Package
Shipping
FODM1007
Stretched Body SOP 4−Pin
100 Units / Tube
3000 / Tape & Reel
100 Units / Tube
FODM1007R2
Stretched Body SOP 4−Pin
FODM1007V
Stretched Body SOP 4−Pin,
DIN EN/IEC60747−5−5 Option
FODM1007R2V
Stretched Body SOP 4−Pin,
DIN EN/IEC60747−5−5 Option
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: The product orderable part number system listed in this table also applies to the FODM1008, FODM1009 products.
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SSOP4 / LSOP04
CASE 565BH
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13754G
SSOP4 / LSOP04
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
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