FODM121CR2V [ONSEMI]
4 引脚全间距，微型扁平封装光电晶体管光耦合器;
| 型号： | FODM121CR2V |
| 厂家： | 
ONSEMI |
| 描述： | 4 引脚全间距，微型扁平封装光电晶体管光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总9页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
4-Pin Full Pitch Mini-Flat
Package Phototransistor
Optocouplers
MFP4 3.85X4.4, 2.54P
CASE 100AP
FODM121 Series, FODM124,
FODM2701, FODM2705
PIN CONNECTIONS
Description
1
2
4
3
ANODE
COLLECTOR
EMITTER
The FODM121 series, FODM124, and FODM2701 consists of
a gallium arsenide infrared emitting diode driving a phototransistor in
a compact 4−pin mini−flat package. The lead pitch is 2.54 mm. The
FODM2705 consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
CATHODE
Equivalent Circuit
FODM121, FODM124, FODM2701
Features
• More than 5 mm Creepage/Clearance
• Compact 4−Pin Surface Mount Package
(2.4 mm Maximum Standoff Height)
1
2
4
3
ANODE
COLLECTOR
EMITTER
CATHODE
• Current Transfer Ratio in Selected Groups:
♦ DC Input:
Equivalent Circuit
FODM2705
G FODM121: 50–600%
G FODM121A: 100–300%
G FODM121B: 50–150%
G FODM121C: 100–200%
G FODM124: 100% MIN
G FODM2701: 50–300%
♦ AC Input:
MARKING DIAGRAM
ON
121x
G FODM2705: 50–300%
V X YY R
• Safety and Regulatory Approvals:
♦ UL1577, 3,750 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
• This Device is Pb−Free and is RoHS Compliant
ON
121x
V
X
YY
R
= onsemi Logo
= Device Number
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Digit Work Week
Applications
• Digital Logic Inputs
• Microprocessor Inputs
• Power Supply Monitor
• Twisted Pair Line Receiver
• Telephone Line Receiver
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2022 − Rev. 4
FODM2705/D
FODM121 Series, FODM124, FODM2701, FODM2705
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance
with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89.
For Rated Mains Voltage
< 150 V
< 300 V
I–IV
I–III
RMS
RMS
Climatic Classification
40/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
904
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1060
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
6000
≥ 5
V
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
≥ 5
External Clearance
≥ 0.4
150
200
300
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
T
S
Input Current (Note 1)
I
mA
mW
W
S,INPUT
Output Power (Note 1)
P
S,OUTPUT
9
Insulation Resistance at T , V = 500 V (Note 1)
> 10
R
S
IO
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS T = 25°C Unless otherwise specified.
A
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +110
−40 to +125
260 for 10 s
°C
°C
°C
°C
STG
OPR
T
T
T
J
SOL
EMITTER
I
Continuous Forward Current
50
1
mA
A
F (avg)
I
Peak Forward Current (1 ms pulse, 300 pps.)
Reverse Voltage
F (pk)
V
P
6
V
R
Power Dissipation
70
1.41
mW
mW/°C
D
Derate linearly (Above 75°C)
DETECTOR
I
Continuous Collector Current
80
80
mA
V
C
V
Collector−Emitter Voltage
FODM121 Series, FODM124
FODM2701, FODM2705
CEO
40
V
Emitter−Collector Voltage
Power Dissipation
7
V
ECO
P
150
3.27
mW
D
Derate linearly (Above 80°C)
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
FODM121 Series, FODM124, FODM2701, FODM2705
ELECTRICAL CHARACTERISTICS T = 25°C Unless otherwise specified.
A
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
V
F
Forward Voltage
FODM121 Series,
FODM124
IF = 10 mA
1.0
−
−
1.3
1.4
V
FODM2701
FODM2705
IF = 5 mA
I = 5 mA
−
F
I
R
Reverse Current
FODM121 Series,
FODM124,
FODM2701
V
R
= 5 V
−
−
5
mA
Detector
BV
Collector−Emitter Breakdown
FODM121 Series,
FODM124
I
= 1 mA, I = 0
80
40
7
−
−
−
−
−
V
CEO
ECO
C
F
Voltage
FODM2701,
FODM2705
BV
Emitter−Collector Breakdown
Voltage
All
I = 100 mA, I = 0
E
−
V
F
I
Collector Dark Current
Capacitance
All
All
V
= 40 V, I = 0
−
−
−
100
nA
pF
CEO
CE
F
C
V
CE
= 0 V, f = 1 MHz
10
CE
TRANSFER CHARACTERISTICS
CTR
DC Current Transfer Ratio
FODM2701
FODM2705
FODM121
FODM121A
FODM121B
FODM121C
FODM124
I = 5 mA, V = 5 V
50
50
50
100
50
100
100
50
0.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
3
300
300
600
300
150
200
1200
−
%
F
CE
I = 5 mA, V = 5 V
F
CE
I = 5 mA, V = 5 V
F
CE
I = 1 mA, V = 0.5 V
F
CE
I = 0.5 mA, V = 1.5 V
F
CE
CTR Symmetry
FODM2705
FODM121 Series
FODM124
FODM2701
FODM2705
All
I = 5 mA, V = 5 V
3.0
0.4
0.4
0.3
0.3
−
F
CE
V
Saturation Voltage
I = 8 mA, I = 2.4 mA
V
CE(SAT)
F
C
I = 1 mA, I = 0.5 mA
−
F
C
I = 10 mA, I = 2 mA
−
F
C
I = 10 mA, I = 2 mA
−
F
C
t
r
Rise Time
(Non−Saturated)
I
= 2 mA, V = 5 V,
L
−
ms
ms
C
CE
R = 100 W
t
f
Fall Time
(Non−Saturated)
All
I
= 2 mA, V = 5 V,
L
−
3
−
C
CE
R = 100 W
ISOLATION CHARACTERISTICS
V
ISO
Steady State Isolation Voltage
(Note 2)
All
1 minute
3750
−
−
VAC
RMS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Steady state isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 3 and
ISO
4 are common.
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3
FODM121 Series, FODM124, FODM2701, FODM2705
TYPICAL PERFORMANCE CURVES
(T = 25°C UNLESS OTHERWISE SPECIFIED)
A
100
10
1
0.35
0.30
0.25
T
= 110°C
A
T
= 70°C
= 25°C
A
I
I
= 8 mA
= 2.4. mA
F
T
T
= 0°C
C
A
A
0.20
0.15
T
= −40°C
A
I
I
= 10 mA
= 2 mA
F
C
0.10
0.05
0.00
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−40
−20
0
20
40
60
80
100
120
V
F
− Forward Voltage (V)
T
A
− Ambient Temperature (5C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Collector−Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
500
100
100
T
A
= 25°C
T
A
= 25°C
V
= 10 V
CE
V
= 5 V
V
= 10 V
CE
CE
10
1
V
= 5 V
CE
0.1
10
0.1
1
10
100
0.1
1
10
100
I
F
− Forward Current (mA)
I − Forward Current (mA)
F
Figure 3. Current Transfer Ratio vs. Forward
Current (FODM121/2701/2705)
Figure 4. Collector Current vs. Forward
Current (FODM121/2701/2705)
40
30
20
100
T
A
= 25°C
I
= 25 mA
F
I
F
= 50 mA
I
= 40 mA
F
10
1
I
F
= 30 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 0.5 mA
0.1
10
0
I
= 5 mA
= 1 mA
F
V
= 5 V
CE
I
F
0.01
−40
−20
0
20
40
60
80
100
120
0
2
4
6
8
10
T
A
− Ambient Temperature (5C)
V
CE
− Collector−Emitter Voltage (V)
Figure 5. Collector Current vs. Ambient
Temperature (FODM121/2701/2705)
Figure 6. Collector Current vs. Ambient
Temperature (FODM121/2701/2705)
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4
FODM121 Series, FODM124, FODM2701, FODM2705
TYPICAL PERFORMANCE CURVES (CONTINUED)
(T = 25°C UNLESS OTHERWISE SPECIFIED)
A
10000
1000
100
10
160
V
= 40 V
I = 5 mA
F
Normalized to T = 25°C
CE
A
V
= 5 V
CE
140
120
100
80
60
1
40
20
−40
0.1
−40
−20
0
20
40
60
80
100
120
−20
0
20
40
60
80
100
120
T
A
− Ambient Temperature (5C)
T
A
− Ambient Temperature (5C)
Figure 7. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
Figure 8. Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM121/2701/2705)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1000
100
10
I
= 5 mA
I = 16 mA
F
V
T
A
= 5 V
= 25°C
F
CC
I
= 1 mA
= 0.5 mA
F
I
C
t
OFF
t
S
t
ON
1
−40
−20
0
20
40
60
80
100
120
1
10
100
R
− Load Resistance (kW)
T
A
− Ambient Temperature (5C)
L
Figure 9. Switching Time vs. Load Resistance
(FODM121/2701/2705)
Figure 10. Collector−Emitter Saturation
Voltage vs. Ambient Temperature (FODM124)
500
100
50
10
T
CE
= 25°C
T = 25°C
A
A
V
= 0.5 V
V
= 0.5 V
CE
1
0.1
10
0.01
0.1
1
10
50
0.1
1
10
50
I
F
− Forward Current (mA)
I − Forward Current (mA)
F
Figure 11. Current Transfer Ratio vs.
Forward Current (FODM124)
Figure 12. Collector Current vs. Forward
Current (FODM124)
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5
FODM121 Series, FODM124, FODM2701, FODM2705
TYPICAL PERFORMANCE CURVES (CONTINUED)
(T = 25°C UNLESS OTHERWISE SPECIFIED)
A
50
10
10
V
= 0.5 V
T
A
= 25°C
CE
I
= 10 mA
F
8
6
4
2
0
I
= 5 mA
F
I
F
= 10 mA
I
= 5 mA
= 2 mA
F
I
F
= 2 mA
= 1 mA
I
F
1
I
F
I
= 0.5 mA
F
I
F
= 1 mA
I
= 0.5 mA
F
0.1
−40
0.0
0.2
0.4
0.6
0.8
1.0
−20
0
20
40
60
80
100
120
T
A
− Ambient Temperature (5C)
V
CE
− Collector−Emitter Voltage (V)
Figure 13. Collector Current vs. Ambient
Temperature (FODM124)
Figure 14. Collector Current vs. Collector−Emitter
Voltage (FODM124)
160
V
= 40 V
I
= 1 mA
= 0.5 V
CE
Normalized to T = 25°C
A
F
10000
1000
100
10
V
CE
140
120
100
80
60
1
40
0.1
−40
20
−40
−20
0
20
40
60
80
100
120
−20
0
20
40
60
80
100
120
T
A
− Ambient Temperature (5C)
T
A
− Ambient Temperature (5C)
Figure 15. Collector Dark Current vs. Ambient
Temperature (FODM124)
Figure 16. Normalized Current Transfer Ratio
vs. Ambient Temperature (FODM124)
V
= 5 V
CC
I
F
= 1 mA
T
A
= 25°C
1000
100
10
t
OFF
t
S
t
ON
1
1
10
100
R
− Load Resistance (kW)
L
Figure 17. Switching Time vs. Load
Resistance (FODM124)
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6
FODM121 Series, FODM124, FODM2701, FODM2705
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
T
T
P
260
240
220
200
180
160
t
P
L
Tsmax
Tsmin
t
Preheat Area
L
140
120
100
80
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (s)
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t ) from (Tsmin to Tsmax)
200°C
60–120 s
S
Ramp−up Rate (t to t )
3°C/second max.
217°C
L
P
Liquidus Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 s
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
260°C +0°C / –5°C
30 s
P
Ramp−down Rate (T to T )
6°C/s max.
8 min max.
P
L
Time 25°C to Peak Temperature
ORDERING INFORMATION
Part Number (Note 3)
FODM121
†
Package
Full Pitch Mini−Flat 4−Pin
Shipping
100 / Tube
2,500 / Tape and Reel
100 / Tube
FODM121R2
Full Pitch Mini−Flat 4−Pin
FODM121V
Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
FODM121R2V
2,500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. The product orderable part number system listed in this table also applies to the FODM121A, FODM121B, FODM121C, FODM124,
FODM2701, and FODM2705 products.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP4 3.85X4.4, 2.54P
CASE 100AP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13488G
MFP4 3.85X4.4, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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