FODM214AR2V [ONSEMI]

Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package;
FODM214AR2V
型号: FODM214AR2V
厂家: ONSEMI    ONSEMI
描述:

Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

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FODM214, FODM217 Series  
Single Channel, AC/DC  
Sensing Input,  
Phototransistor  
Optocoupler In Half-Pitch  
Mini-Flat 4-Pin Package  
www.onsemi.com  
The FODM217 series consist of a gallium arsenide infrared emitting  
diode driving a phototransistor. The FODM214 series consist of two  
gallium arsenide infrared emitting diodes connected in inverse parallel  
for AC operation. Both were built in a compact, halfpitch, miniflat,  
4pin package. The lead pitch is 1.27 mm.  
MFP4 2.5x4.4, 1.27P  
CASE TBD  
Features  
Current Transfer Ratio Ranges from 20 to 600%  
at I = 1 mA, V = 5 V, T = 25°C  
F
CE  
A
MARKING DIAGRAM  
FODM214 20 to 400%  
FODM214A 50 to 250%  
at I = 5 mA, V = 5 V, T = 25°C  
F
CE  
A
FODM217A 80 to 160%  
FODM217B 130 to 260%  
FODM217C 200 to 400%  
FODM217D 300 to 600%  
Safety and Regulatory Approvals:  
UL1577, 3750 VAC  
DIN EN/IEC6074755, 565 V Peak Working Insulation Voltage  
Applicable to Infrared Ray Reflow, 260°C  
for 1 min  
RMS  
1.  
2.  
3.  
4.  
5.  
6.  
ON = Corporate Logo  
21xx = Device Number  
V
X
YY  
R1  
= DIN EN/IEC6074755 Option  
= OneDigit Year Code  
= Digit Work Week  
Typical Applications  
= Assembly Package Code  
Primarily Suited for DCDC Converters  
For Ground Loop Isolation, Signal to Noise Isolation  
Communications – Adapters, Chargers  
Consumer – Appliances, Set Top Boxes  
Industrial – Power Supplies, Motor Control, Programmable Logic  
Control  
PIN CONNECTIONS  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 7 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
August, 2019 Rev. 2  
FODM214/D  
FODM214, FODM217 Series  
SAFETY AND INSULATIONS RATING  
As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
Installation Classifications per DIN VDE 0110/1.89 Table 1,  
For Rated Mains Voltage  
< 150 VRMS  
< 300 VRMS  
I–IV  
I–III  
Climatic Classification  
55/110/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
InputtoOutput Test Voltage, Method A, V  
Value  
Unit  
V
PR  
x 1.6 = V  
,
904  
Vpeak  
IORM  
PR  
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC  
m
InputtoOutput Test Voltage, Method B, V  
x 1.875 = V  
,
1060  
Vpeak  
IORM  
PR  
100% Production Test with t = 1 s, Partial Discharge < 5 pC  
m
Maximum Working Insulation Voltage  
Highest Allowable OverVoltage  
External Creepage  
565  
4,000  
5  
V
Vpeak  
Vpeak  
mm  
IORM  
V
IOTM  
5  
External Clearance  
mm  
0.4  
150  
DTI  
Distance Through Insulation (Insulation Thickness)  
mm  
T
S
°C  
Case Temperature (Note 1)  
Input Current (Note 1)  
Output Power (Note 1)  
200  
300  
mA  
mW  
W
I
S,INPUT  
P
S,OUTPUT  
9
R
Insulation Resistance at T , V = 500 V (Note 1)  
> 10  
IO  
S
IO  
1. Safety limit values – maximum values allowed in the event of a failure.  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)  
A
Symbol  
Parameter  
Value  
Units  
T
STG  
Storage Temperature  
55 to +150  
°C  
T
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
55 to +110  
55 to +125  
260 for 10 sec  
°C  
°C  
°C  
OPR  
T
J
T
SOL  
(Refer to Reflow Temperature Profile)  
EMITTER  
I
Continuous Forward Current  
Peak Forward Current (1 ms pulse, 300 pps)  
Reverse Input Voltage  
50  
1
mA  
A
F(average)  
IF  
(peak)  
V
R
6
V
PD  
Power Dissipation (Note 2)  
70  
mW  
LED  
DETECTOR  
I
Continuous Collector Current  
CollectorEmitter Voltage  
50  
80  
7
mA  
V
C(average)  
V
V
CEO  
EmitterCollector Voltage  
V
ECO  
PD  
Collector Power Dissipation (Note 2)  
150  
mW  
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside  
these ratings.  
www.onsemi.com  
2
 
FODM214, FODM217 Series  
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise specified  
A
Symbol  
Parameter  
Device  
Conditions  
Min.  
Typ.  
1.2  
30  
Max.  
Units  
EMITTER  
FODM214  
FODM217  
FODM217  
All  
Forward Voltage  
VF  
IF = 20 mA  
V
1.4  
IF = 20 mA  
Reverse Current  
IR  
VR = 4 V  
10  
mA  
CT  
Terminal Capacitance  
V = 0 V, f = 1 kHz  
250  
pF  
DETECTOR  
BV  
BV  
CollectorEmitter Breakdown Voltage  
EmitterCollector Breakdown Voltage  
Collector Dark Current  
All  
All  
All  
I
I
= 0.1 mA, IF = 0 mA  
80  
7
V
V
CEO  
ECO  
C
= 10 mA, IF = 0 mA  
E
I
V
= 50 V, IF = 0 mA  
100  
nA  
CEO  
CE  
TRANSFER CHARACTERISTICS T =25°C unless otherwise specified  
A
Symbol  
Parameter  
Device  
Conditions  
Min.  
20  
Typ.  
Max.  
400  
250  
160  
260  
400  
Units  
CTR  
%
I = 1 mA, V = 5 V  
Current Transfer Ratio  
(collectoremitter)  
FODM214  
FODM214A  
FODM217A  
FODM217B  
FODM217C  
CE  
F
CE  
50  
I = 5 mA, V = 5 V  
80  
F
CE  
130  
200  
FODM217D  
FODM214  
FODM217  
FODM214  
FODM217  
FODM214  
FODM217  
FODM214  
FODM217  
300  
0.2  
4
600  
2.5  
30  
I
Collector Current  
I = 1 mA, V = 5 V  
mA  
%
C
F
CE  
I = 5 mA, V = 5 V  
F
CE  
CTR  
Saturated Current Transfer Ratio  
Collector Current  
I = 8 mA, V = 0.4 V  
F CE  
(SAT)  
60  
I = 8 mA, V = 0.4 V  
F
CE  
I
I = 8 mA, V = 0.4 V  
mA  
V
C(SAT)  
F
CE  
4.8  
I = 8 mA, V = 0.4 V  
F
CE  
V
CollectorEmitter Saturation Voltage  
I = 8 mA, I = 2.4 mA  
F C  
CE(SAT)  
0.4  
I = 8 mA, I = 2.4 mA  
F
C
SWITCHING CHARACTERISTICS T = 25°C unless otherwise specified  
A
Symbol  
Parameter  
Turn On Time  
Conditions  
= 2 mA, V = 10 V, R = 100 W  
Min.  
Typ.  
Max.  
Units  
ms  
t
I
C
I
C
I
C
3
3
3
3
ON  
CE  
L
t
Turn Off Time  
= 2 mA, V = 10 V, R = 100 W  
ms  
OFF  
CE  
L
t
R
Output Rise Time (10%90%)  
Output Fall Time (90%10%)  
= 2 mA, V = 10 V, R = 100 W  
ms  
CE  
L
t
F
IC = 2 mA, V = 10 V, R = 100 W  
ms  
CE  
L
ISOLATION CHARACTERISTICS  
Symbol  
Parameter  
Conditions  
Freq = 60 Hz, t = 1.0 min,  
Min.  
Typ.  
Max.  
Units  
V
ISO  
InputOutput Isolation Voltage  
3,750  
VAC  
RMS  
I
v 10 mA (Note 3, 4)  
IO  
10  
R
C
Isolation Resistance  
Isolation Capacitance  
V
= 500 V (Note 3)  
5 x 10  
W
ISO  
ISO  
IO  
Frequency = 1 MHz  
0.6  
1.0  
pF  
3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.  
4. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.  
www.onsemi.com  
3
 
FODM214, FODM217 Series  
TYPICAL CHARACTERISTICS  
160  
140  
120  
100  
80  
80  
60  
40  
20  
0
60  
40  
20  
0
0
25  
50  
75  
100  
125  
0
25  
50  
75  
100  
125  
T , AMBIENT TEMPERATURE (5C)  
A
T , AMBIENT TEMPERATURE (5C)  
A
Figure 1. Collector Power Dissipation vs. Ambient  
Temperature  
Figure 2. LED Power Dissipation vs. Ambient  
Temperature  
100  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
75°C  
110°C  
-55°C  
10  
25°C  
1
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1
10  
I , FORWARD CURRENT (mA)  
100  
V , FORWARD VOLTAGE (V)  
F
F
Figure 3. Forward Current vs. Forward Voltage  
Figure 4. Forward Voltage Temperature Coefficient vs.  
Forward Current  
5
30  
25  
0.5 mA  
4
1 mA  
3 mA  
FODM217 IF = 5 mA  
20  
3
2
1
0
5 mA  
7 mA  
10 mA  
15  
10  
5
FODM214 IF = 1 mA  
0
0
5
10  
15  
20  
0
5
10  
I , FORWARD CURRENT (mA)  
F
V , COLLECTOREMITTER CURRENT (V)  
CE  
Figure 5. Collector Emitter Voltage vs. Forward Current Figure 6. Collector Current vs. CollectorEmitter  
Voltage  
www.onsemi.com  
4
FODM214, FODM217 Series  
30  
25  
20  
15  
10  
5
0.1  
10 V  
5 V  
VCE= 0.4 V  
0.01  
0.001  
FODM217 IF = 5 mA  
FODM214 IF = 1 mA  
0.0001  
0
0.0  
0.0001  
0.001  
0.01  
0.1  
0.5  
1.0  
V , COLLECTOREMITTER VOLTAGE (V)  
CE  
I , FORWARD CURRENT (mA)  
F
Figure 7. Collector Current vs.  
Small CollectorEmitter Voltage  
Figure 8. Collector Current vs.  
Forward Current  
1000  
1E5  
1E6  
1E7  
1E8  
1E9  
1E10  
1E11  
10 V  
5 V  
VCE= 48 V  
24 V  
VCE= 0.4 V  
100  
5 V  
10 V  
10  
0.0001  
0.001  
0.01  
0.1  
25  
0
25  
50  
75  
100  
T , AMBIENT TEMPERATURE (5C)  
A
I , FORWARD CURRENT (A)  
F
Figure 9. Collector Dark Current vs.  
Ambient Temperature  
Figure 10. Current Transfer Ratio vs.  
Forward Current  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
100  
10  
1
20 mA  
10 mA  
5 mA  
IF = 8 mA  
IC = 2.4 mA  
IF = 1 mA  
IC = 0.2 mA  
1 mA  
IF = 20 mA  
IC = 1 mA  
I
F= 0.5 mA  
0.1  
25  
25  
0
25  
50  
75  
100  
0
25  
50  
75 100  
T , AMBIENT TEMPERATURE (5C)  
A
T , AMBIENT TEMPERATURE (5C)  
A
Figure 11. CollectorEmitter Saturation vs.  
Figure 12. Collector Current vs.  
Ambient Temperature  
Ambient Temperature  
www.onsemi.com  
5
FODM214, FODM217 Series  
1000  
100  
10  
100  
VCC= 10 V  
TA = 25 °C  
VCC= 5 V  
IF = 16 mA  
IC= 2 mA  
tOFF  
W
RL= 100  
F
t
tOFF  
tON  
10  
tR  
tON  
tF  
1
tR  
0.1  
1
25  
1
10  
100  
0
25  
50  
75  
100  
R , LOAD RESISTANCE (kW)  
L
T , AMBIENT REMPERATURE (5C)  
A
Figure 13. Switching Time vs. Load Resistance  
Figure 14. Switching Time vs. Ambient  
Temperature  
TEST CIRCUIT  
V
CC  
R
L
V
O
1
2
4
3
I
F
t
R
t
F
V
O
90%  
10%  
I Monitor  
F
R
M
t
t
ON  
OFF  
Figure 15. Test Circuit for Switching Time  
www.onsemi.com  
6
FODM214, FODM217 Series  
REFLOW PROFILE  
Figure 16. Reflow Profile  
Prole Freature  
PbFree Assembly Prole  
Temperature Min. (Tsmin)  
Temperature Max. (Tsmax)  
Time (t ) from (Tsmin to Tsmax)  
150°C  
200°C  
60–120 seconds  
3°C/second max.  
217°C  
S
Rampup Rate (t to t )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60–150 seconds  
260°C +0°C / –5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Rampdown Rate (T to T )  
6°C/second max.  
8 minutes max.  
P
L
Time 25°C to Peak Temperature  
ORDERING INFORMATION (Note 5)  
Part Number  
Package  
Packing Method  
Tube (100 units)  
FODM214A  
SOP 4Pin  
SOP 4Pin  
FODM214AR2  
FODM214AV  
FODM214AR2V  
Tape and Reel (3000 units)  
Tube (100 units)  
SOP 4Pin, DIN EN/IEC6074755 Option  
SOP 4Pin, DIN EN/IEC6074755 Option  
Tape and Reel (3000 units)  
5. The product orderable part number system listed in this table also applies to the FODM214, FODM217A, FODM217B, FODM217C, and  
FODM217D products.  
www.onsemi.com  
7
 
FODM214, FODM217 Series  
PACKAGE DIMENSIONS  
MFP4 2.5x4.4, 1.27P  
CASE TBD  
ISSUE TBD  
1.27 0.25  
3
4
0.61  
7.87 4.83  
1.52  
4.40 0.20  
0.40 0.10  
1.27  
1
2
LAND PATTERN RECOMMENDATION  
5.44 0.30  
TOP VIEW  
2.60 0.30  
0.25 0.05  
2.00 0.20  
0.1 0.10  
7 0.45  
DETAIL A  
SIDE VIEW  
FRONT VIEW  
NOTES:  
GAGE  
A. NO INDUSTRY STANDARD APPLIES TO  
THIS PACKAGE  
PLANE  
B. ALL DIMENSIONS ARE IN MILLIMETERS  
4°  
C. DIMENSIONS DO NOT INCLUDE MOLD  
FLASH OR BURRS  
SEATING  
PLANE  
D. DRAWING FILENAME: MKTMFP04DrevA  
MIN 0.5  
1.30 0.30  
0.127  
DETAIL A  
www.onsemi.com  
8
FODM214, FODM217 Series  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
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literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
FODM214/D  

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