FODM217CV [ONSEMI]

单沟道,直流感应输入,光电晶体管光耦合器,半间距微型扁平 4 引脚封装;
FODM217CV
型号: FODM217CV
厂家: ONSEMI    ONSEMI
描述:

单沟道,直流感应输入,光电晶体管光耦合器,半间距微型扁平 4 引脚封装

晶体管 光电晶体管
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
FODM217 Series  
Single Channel, DC Sensing Input,  
Phototransistor Optocoupler In  
Half-Pitch Mini-Flat 4-Pin Package  
www.onsemi.com  
The FODM217 Series single channel, DC sensing input, optocoupler  
consists of one gallium arsenide (GaAs) infrared light emitting diode  
optically coupled to one phototransistor, in a compact, half-pitch,  
mini-flat, 4-pin package. The input-output isolation voltage, V  
, is  
ISO  
rated at 3,750 VAC  
.
RMS  
Features  
Current Transfer Ratio Ranges from 80 to 600% at I = 5 mA,  
F
V
= 5 V, T = 25ºC  
CE  
A
SOP 4 PINS  
- FODM217A - 80 to 160%  
- FODM217B - 130 to 260%  
- FODM217C - 200 to 400%  
- FODM217D - 300 to 600%  
MARKING DIAGRAM  
Safety and Regulatory Approvals:  
- UL1577, 3750 VAC for 1 min  
RMS  
- DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage  
Applicable to Infrared Ray Reflow, 260ºC  
Typical Applications  
1.  
2.  
3.  
4.  
5.  
6.  
F = Corporate Logo  
217x = Device Number  
V = DIN EN/IEC60747-5-5 Option  
X = One-Digit Year Code  
YY = Digit Work Week  
Primarily Suited for DC-DCConverters  
For Ground Loop Isolation, Signal to NoiseIsolation  
Communications Adapters,Chargers  
Consumer Appliances, Set TopBoxes  
Industrial Power Supplies, Motor Control, Programmable Logic  
Control  
R1 = Assembly Package Code  
PIN CONNECTIONS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January 2017 - Rev. P0  
FODM217/D  
FODM217 Series  
SAFETY AND INSULATIONS RATING  
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the  
safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
< 150 V  
< 300 V  
IIV  
IIII  
Installation Classifications per DIN VDE 0110/1.89 Table 1,  
For Rated Mains Voltage  
RMS  
RMS  
Climatic Classification  
55/110/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Input-to-Output Test Voltage, Method A, V  
Value  
Unit  
x 1.6 = V , Type and  
IORM  
PR  
904  
V
peak  
peak  
V
PR  
Sample Test with t = 10 s, Partial Discharge < 5 pC  
m
Input-to-Output Test Voltage, Method B, V  
x 1.875 = V , 100%  
PR  
IORM  
V
1060  
Production Test with t = 1 s, Partial Discharge < 5 pC  
m
Maximum Working Insulation Voltage  
Highest Allowable Over-Voltage  
External Creepage  
565  
4,000  
5  
V
V
V
IORM  
peak  
peak  
V
IOTM  
mm  
mm  
mm  
°C  
5  
External Clearance  
0.4  
150  
DTI  
Distance Through Insulation (Insulation Thickness)  
T
S
Case Temperature (Note 1)  
Input Current (Note 1)  
Output Power (Note 1)  
200  
mA  
mW  
Ω
I
S,INPUT  
P
300  
S,OUTPUT  
9
R
> 10  
IO  
Insulation Resistance at T , V = 500 V (Note 1)  
S
IO  
1. Safety limit values maximum values allowed in the event of a failure.  
www.onsemi.com  
2
FODM217 Series  
ABSOLUTE MAXIMUM RATINGS (Note 2)  
T
= 25°C unless otherwise specified.  
A
Symbol  
Parameter  
Value  
Units  
T
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
-55 to +150  
-55 to +110  
-55 to +125  
°C  
°C  
°C  
STG  
OPR  
T
J
T
260 for 10 sec  
°C  
SOL  
(Refer to Reflow Temperature Profile)  
Emitter  
I
Continuous Forward Current  
Peak Forward Current (1 µs pulse, 300 pps)  
Reverse Input Voltage  
50  
1
mA  
A
F(average)  
I
F(peak)  
V
R
6
V
PD  
Power Dissipation (Note 3)  
70  
mW  
LED  
Detector  
I
Continuous Collector Current  
Collector-Emitter Voltage  
50  
80  
7
mA  
V
C(average)  
V
CEO  
V
Emitter-Collector Voltage  
V
ECO  
PD  
C
Collector Power Dissipation (Note 3)  
150  
mW  
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device  
functionality should not be assumed, damage may occur and reliability may be affected.  
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside  
these ratings.  
www.onsemi.com  
3
FODM217 Series  
ELECTRICAL CHARACTERISTICS  
T
A = 25°C unless otherwise specified  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
1.2  
Max.  
Units  
Emitter  
Forward Voltage  
V
I
I
1.4  
10  
V
µA  
pF  
F
T
F = 20 mA  
Reverse Current  
V
R
R = 4 V  
C
Terminal Capacitance  
V = 0 V, f = 1 kHz  
30  
250  
Detector  
Collector-Emitter Breakdown  
Voltage  
BV  
I
I
I
80  
7
V
CEO  
C = 0.1 mA, F = 0 mA  
Emitter-Collector Breakdown  
Voltage  
BV  
I
I
V
ECO  
E = 10 µA, F = 0 mA  
Collector Dark Current  
V
I
100  
nA  
CEO  
CE = 50 V, F = 0 mA  
TRANSFER CHARACTERISTICS  
T =25ºC unless otherwise specified  
A
Symbol  
Parameter  
Device  
Conditions  
Min.  
80  
Typ.  
Max.  
160  
260  
400  
Units  
FODM217A  
FODM217B  
FODM217C  
%
I
V
Current Transfer Ratio  
(collector-emitter)  
F = 5 mA, CE = 5 V  
130  
200  
CTR  
CE  
FODM217D  
All  
300  
4
600  
30  
Collector Current  
I
I
V
mA  
I
F = 5 mA, CE = 5 V  
C
Saturated Current Transfer  
Ratio  
Collector Current  
CTR  
V
All  
All  
60  
%
(SAT)  
F = 8 mA, CE = 0.4 V  
4.8  
mA  
I
I
V
C(SAT)  
F = 8 mA, CE = 0.4 V  
Collector-Emitter  
I
I
V
All  
0.4  
V
CE(SAT)  
F = 8 mA, C = 2.4 mA  
Saturation Voltage  
SWITCHING CHARACTERISTICS  
T =25ºC unless otherwise specified  
A
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
I
V
C = 2 mA, CE = 10 V,  
t
Turn On Time  
3
µs  
ON  
R
I
L = 100 Ω  
V
C = 2 mA, CE = 10 V,  
t
Turn Off Time  
3
2
3
µs  
µs  
µs  
OFF  
R
L = 100 Ω  
I
V
C = 2 mA, CE = 10 V,  
t
Output Rise Time (10% -90%)  
Output Fall Time (90% -10%)  
R
R
I
L = 100 Ω  
V
C = 2 mA, CE = 10 V,  
t
F
R
L = 100 Ω  
ISOLATION CHARACTERISTICS  
Symbol  
Parameter  
Conditions  
Freq = 60 Hz, t = 1.0 min,  
Min.  
Typ.  
Max.  
Units  
V
VAC  
Input-Output Isolation Voltage  
3,750  
RMS  
ISO  
I
≤ 10 µA (Note 4,5)  
I-O  
R
10  
5 x 10  
Isolation Resistance  
Isolation Capacitance  
ISO  
V
= 500 V (Note 4)  
I-O  
Frequency = 1 MHz  
0.6  
1.0  
pF  
C
ISO  
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.  
5. 3,750 VAC for 1 minute duration is equivalent to 4,500 VAC for 1 second duration.  
RMS  
RMS  
www.onsemi.com  
4
FODM217 Series  
TYPICAL CHARACTERISTICS  
160  
140  
120  
100  
80  
80  
60  
40  
20  
0
60  
40  
20  
0
0
25  
50  
75  
100  
125  
0
25  
50  
75  
100  
125  
TA - AMBIENT TEMPERATURE (°C)  
TA - AMBIENT TEMPERATURE (°C)  
Figure 1. Collector Power Dissipation vs. Ambient  
Temperature  
Figure 2. LED Power Dissipation vs. Ambient  
Temperature  
100  
-2.4  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
75°C  
110°C  
-55°C  
25°C  
10  
1
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1
10  
100  
VF - FORWARD VOLTAGE (V)  
IF - FORWARD CURRENT (mA)  
Figure 3. Forward Current vs. Forward Voltage  
Figure 4. Forward Voltage Temperature Coefficient vs.  
Forward Current  
5
50  
40  
30  
0.5 mA  
4
1 mA  
3 mA  
3
5 mA  
7 mA  
10 mA  
IF = 5 mA  
2
20  
1
0
10  
0
0
5
10  
15  
20  
0
5
10  
IF - FORWARD CURRENT (mA)  
VCE - COLLECTOR-EMITTER VOLTAGE (V)  
Figure 5. Collector Emitter Voltage vs. Forward Current  
Figure 6. Collector Current vs. Collector-Emitter Voltage  
www.onsemi.com  
5
FODM217 Series  
50  
40  
30  
20  
10  
0
0.1  
0.01  
10 V  
5 V  
VCE = 0.4 V  
IF = 5 mA  
0.001  
0.0001  
0.0  
0.5  
VCE - COLLECTOR-EMITTER VOLTAGE (V)  
1.0  
0.0001  
0.001  
0.01  
0.1  
IF - FORWARD CURRENT (mA)  
Figure 7. Collector Current vs. Small Collector-Emittter  
Voltage  
Figure 8. Collector Current vs. Forward Current  
1E-5  
1000  
10 V  
5 V  
1E-6  
VCE = 48 V  
1E-7  
24 V  
VCE = 0.4 V  
1E-8  
100  
5 V  
1E-9  
1E-10  
1E-11  
10 V  
10  
0.0001  
-25  
0
25  
50  
75  
100  
0.001  
0.01  
0.1  
TA - AMBIENT TEMPERATURE (°C)  
IF - FORWARD CURRENT (A)  
Figure 9. Collector Dark Current vs. Ambient  
Temperature  
Figure 10. Current Transfer Ratio vs. Forward Current  
0.18  
100  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
20 mA  
10 mA  
10  
5 mA  
IF = 8 mA  
IC = 2.4 mA  
IF = 1 mA  
1
IC = 0.2 mA  
1 mA  
IF = 20 mA  
IC = 1 mA  
IF = 0.5 mA  
0.1  
-25  
-25  
0
25  
50  
75  
100  
0
25  
50  
75  
100  
TA - AMBIENT TEMPERATURE (°C)  
TA - AMBIENT TEMPERATURE (°C)  
Figure 11. Collector-Emitter Saturation vs. Ambient  
Temperature  
Figure 12. Collector Current vs. Ambient Temperature  
www.onsemi.com  
6
FODM217 Series  
1000  
100  
10  
100  
VCC = 10 V  
TA = 25 °C  
VCC = 5 V  
IF = 16 mA  
IC = 2 mA  
tOFF  
tF  
RL = 100  
tOFF  
tON  
10  
tR  
tON  
tF  
1
tR  
0.1  
1
-25  
1
10  
RL - LOAD RESISTANCE (k)  
100  
0
25  
50  
75  
100  
TA - AMBIENT TEMPERATURE (°C)  
Figure 13. Switching Time vs. Load Resistance  
Figure 14. Switching Time vs. Ambient Temperature  
TEST CIRCUIT  
VCC  
RL  
VO  
1
2
4
IF  
tR  
tF  
VO  
90%  
10%  
IF Monitor  
3
RM  
tON  
tOFF  
Figure 15. Test Circuit for Switching Time  
www.onsemi.com  
7
FODM217 Series  
REFLOW PROFILE  
Profile Freature  
Pb-Free Assembly Profile  
Temperature Min. (Tsmin)  
Temperature Max. (Tsmax)  
150°C  
200°C  
Time (t ) from (Tsmin to Tsmax)  
60120 seconds  
3°C/second max.  
217°C  
S
Ramp-up Rate (t to t )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60150 seconds  
260°C +0°C / 5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Ramp-down Rate (T to T )  
6°C/second max.  
8 minutes max.  
P
L
Time 25°C to Peak Temperature  
Figure 36. Reflow Profile  
www.onsemi.com  
8
FODM217 Series  
ORDERING INFORMATION (Note 6)  
Part Number  
Package  
Packing Method  
Tube (100 units)  
FODM217A  
SOP 4-Pin  
SOP 4-Pin  
FODM217AR2  
FODM217AV  
FODM217AR2V  
Tape and Reel (3000 units)  
Tube (100 units)  
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)  
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)  
Tape and Reel (3000 units)  
6. The product orderable part number system listed in this table also applies to the FODM217B, FODM217C, and FODM217D products.  
www.onsemi.com  
9
1.27±0.25  
3
4
0.61  
7.87 4.83  
1.52  
4.40±0.20  
1.27  
1
2
0.40±0.10  
2.00±0.20  
LAND PATTERN RECOMMENDATION  
TOP VIEW  
2.60±0.30  
5.44±0.30  
0.25±0.05  
0.1±0.10  
7±0.45  
DETAIL A  
SIDE VIEW  
FRONT VIEW  
GAGE  
PLANE  
NOTES:  
A. NO INDUSTRY STANDARD APPLIES TO  
THIS PACKAGE  
B. ALL DIMENSIONS ARE IN MILLIMETERS  
C. DIMENSIONS DO NOT INCLUDE MOLD  
FLASH OR BURRS  
4°  
D. DRAWING FILENAME: MKT-MFP04DrevA  
SEATING  
MIN 0.5  
1.30±0.30  
PLANE  
0.127  
DETAIL A  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
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© Semiconductor Components Industries, LLC  
www.onsemi.com  

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