FODM217C 概述
单沟道,直流感应输入,光电晶体管光耦合器,半间距微型扁平 4 引脚封装
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FODM217 Series
Single Channel, DC Sensing Input,
Phototransistor Optocoupler In
Half-Pitch Mini-Flat 4-Pin Package
www.onsemi.com
The FODM217 Series single channel, DC sensing input, optocoupler
consists of one gallium arsenide (GaAs) infrared light emitting diode
optically coupled to one phototransistor, in a compact, half-pitch,
mini-flat, 4-pin package. The input-output isolation voltage, V
, is
ISO
rated at 3,750 VAC
.
RMS
Features
•
Current Transfer Ratio Ranges from 80 to 600% at I = 5 mA,
F
V
= 5 V, T = 25ºC
CE
A
SOP 4 PINS
- FODM217A - 80 to 160%
- FODM217B - 130 to 260%
- FODM217C - 200 to 400%
- FODM217D - 300 to 600%
MARKING DIAGRAM
• Safety and Regulatory Approvals:
- UL1577, 3750 VAC for 1 min
RMS
- DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
• Applicable to Infrared Ray Reflow, 260ºC
Typical Applications
1.
2.
3.
4.
5.
6.
F = Corporate Logo
217x = Device Number
V = DIN EN/IEC60747-5-5 Option
X = One-Digit Year Code
YY = Digit Work Week
•
•
•
•
•
Primarily Suited for DC-DCConverters
For Ground Loop Isolation, Signal to NoiseIsolation
Communications – Adapters,Chargers
Consumer – Appliances, Set TopBoxes
Industrial – Power Supplies, Motor Control, Programmable Logic
Control
R1 = Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January 2017 - Rev. P0
FODM217/D
FODM217 Series
SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–III
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
Value
Unit
x 1.6 = V , Type and
IORM
PR
904
V
peak
peak
V
PR
Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input-to-Output Test Voltage, Method B, V
x 1.875 = V , 100%
PR
IORM
V
1060
Production Test with t = 1 s, Partial Discharge < 5 pC
m
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
565
4,000
≥ 5
V
V
V
IORM
peak
peak
V
IOTM
mm
mm
mm
°C
≥ 5
External Clearance
≥ 0.4
150
DTI
Distance Through Insulation (Insulation Thickness)
T
S
Case Temperature (Note 1)
Input Current (Note 1)
Output Power (Note 1)
200
mA
mW
Ω
I
S,INPUT
P
300
S,OUTPUT
9
R
> 10
IO
Insulation Resistance at T , V = 500 V (Note 1)
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
www.onsemi.com
2
FODM217 Series
ABSOLUTE MAXIMUM RATINGS (Note 2)
T
= 25°C unless otherwise specified.
A
Symbol
Parameter
Value
Units
T
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
-55 to +150
-55 to +110
-55 to +125
°C
°C
°C
STG
OPR
T
J
T
260 for 10 sec
°C
SOL
(Refer to Reflow Temperature Profile)
Emitter
I
Continuous Forward Current
Peak Forward Current (1 µs pulse, 300 pps)
Reverse Input Voltage
50
1
mA
A
F(average)
I
F(peak)
V
R
6
V
PD
Power Dissipation (Note 3)
70
mW
LED
Detector
I
Continuous Collector Current
Collector-Emitter Voltage
50
80
7
mA
V
C(average)
V
CEO
V
Emitter-Collector Voltage
V
ECO
PD
C
Collector Power Dissipation (Note 3)
150
mW
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
www.onsemi.com
3
FODM217 Series
ELECTRICAL CHARACTERISTICS
T
A = 25°C unless otherwise specified
Symbol
Parameter
Conditions
Min.
Typ.
1.2
Max.
Units
Emitter
Forward Voltage
V
I
I
1.4
10
V
µA
pF
F
T
F = 20 mA
Reverse Current
V
R
R = 4 V
C
Terminal Capacitance
V = 0 V, f = 1 kHz
30
250
Detector
Collector-Emitter Breakdown
Voltage
BV
I
I
I
80
7
V
CEO
C = 0.1 mA, F = 0 mA
Emitter-Collector Breakdown
Voltage
BV
I
I
V
ECO
E = 10 µA, F = 0 mA
Collector Dark Current
V
I
100
nA
CEO
CE = 50 V, F = 0 mA
TRANSFER CHARACTERISTICS
T =25ºC unless otherwise specified
A
Symbol
Parameter
Device
Conditions
Min.
80
Typ.
Max.
160
260
400
Units
FODM217A
FODM217B
FODM217C
%
I
V
Current Transfer Ratio
(collector-emitter)
F = 5 mA, CE = 5 V
130
200
CTR
CE
FODM217D
All
300
4
600
30
Collector Current
I
I
V
mA
I
F = 5 mA, CE = 5 V
C
Saturated Current Transfer
Ratio
Collector Current
CTR
V
All
All
60
%
(SAT)
F = 8 mA, CE = 0.4 V
4.8
mA
I
I
V
C(SAT)
F = 8 mA, CE = 0.4 V
Collector-Emitter
I
I
V
All
0.4
V
CE(SAT)
F = 8 mA, C = 2.4 mA
Saturation Voltage
SWITCHING CHARACTERISTICS
T =25ºC unless otherwise specified
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
I
V
C = 2 mA, CE = 10 V,
t
Turn On Time
3
µs
ON
R
I
L = 100 Ω
V
C = 2 mA, CE = 10 V,
t
Turn Off Time
3
2
3
µs
µs
µs
OFF
R
L = 100 Ω
I
V
C = 2 mA, CE = 10 V,
t
Output Rise Time (10% -90%)
Output Fall Time (90% -10%)
R
R
I
L = 100 Ω
V
C = 2 mA, CE = 10 V,
t
F
R
L = 100 Ω
ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
Freq = 60 Hz, t = 1.0 min,
Min.
Typ.
Max.
Units
V
VAC
Input-Output Isolation Voltage
3,750
RMS
ISO
I
≤ 10 µA (Note 4,5)
I-O
R
10
5 x 10
Isolation Resistance
Isolation Capacitance
Ω
ISO
V
= 500 V (Note 4)
I-O
Frequency = 1 MHz
0.6
1.0
pF
C
ISO
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VAC for 1 minute duration is equivalent to 4,500 VAC for 1 second duration.
RMS
RMS
www.onsemi.com
4
FODM217 Series
TYPICAL CHARACTERISTICS
160
140
120
100
80
80
60
40
20
0
60
40
20
0
0
25
50
75
100
125
0
25
50
75
100
125
TA - AMBIENT TEMPERATURE (°C)
TA - AMBIENT TEMPERATURE (°C)
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
Figure 2. LED Power Dissipation vs. Ambient
Temperature
100
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
75°C
110°C
-55°C
25°C
10
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
VF - FORWARD VOLTAGE (V)
IF - FORWARD CURRENT (mA)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
5
50
40
30
0.5 mA
4
1 mA
3 mA
3
5 mA
7 mA
10 mA
IF = 5 mA
2
20
1
0
10
0
0
5
10
15
20
0
5
10
IF - FORWARD CURRENT (mA)
VCE - COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Collector Emitter Voltage vs. Forward Current
Figure 6. Collector Current vs. Collector-Emitter Voltage
www.onsemi.com
5
FODM217 Series
50
40
30
20
10
0
0.1
0.01
10 V
5 V
VCE = 0.4 V
IF = 5 mA
0.001
0.0001
0.0
0.5
VCE - COLLECTOR-EMITTER VOLTAGE (V)
1.0
0.0001
0.001
0.01
0.1
IF - FORWARD CURRENT (mA)
Figure 7. Collector Current vs. Small Collector-Emittter
Voltage
Figure 8. Collector Current vs. Forward Current
1E-5
1000
10 V
5 V
1E-6
VCE = 48 V
1E-7
24 V
VCE = 0.4 V
1E-8
100
5 V
1E-9
1E-10
1E-11
10 V
10
0.0001
-25
0
25
50
75
100
0.001
0.01
0.1
TA - AMBIENT TEMPERATURE (°C)
IF - FORWARD CURRENT (A)
Figure 9. Collector Dark Current vs. Ambient
Temperature
Figure 10. Current Transfer Ratio vs. Forward Current
0.18
100
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20 mA
10 mA
10
5 mA
IF = 8 mA
IC = 2.4 mA
IF = 1 mA
1
IC = 0.2 mA
1 mA
IF = 20 mA
IC = 1 mA
IF = 0.5 mA
0.1
-25
-25
0
25
50
75
100
0
25
50
75
100
TA - AMBIENT TEMPERATURE (°C)
TA - AMBIENT TEMPERATURE (°C)
Figure 11. Collector-Emitter Saturation vs. Ambient
Temperature
Figure 12. Collector Current vs. Ambient Temperature
www.onsemi.com
6
FODM217 Series
1000
100
10
100
VCC = 10 V
TA = 25 °C
VCC = 5 V
IF = 16 mA
IC = 2 mA
tOFF
tF
RL = 100
tOFF
tON
10
tR
tON
tF
1
tR
0.1
1
-25
1
10
RL - LOAD RESISTANCE (k)
100
0
25
50
75
100
TA - AMBIENT TEMPERATURE (°C)
Figure 13. Switching Time vs. Load Resistance
Figure 14. Switching Time vs. Ambient Temperature
TEST CIRCUIT
VCC
RL
VO
1
2
4
IF
tR
tF
VO
90%
10%
IF Monitor
3
RM
tON
tOFF
Figure 15. Test Circuit for Switching Time
www.onsemi.com
7
FODM217 Series
REFLOW PROFILE
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
150°C
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
Figure 36. Reflow Profile
www.onsemi.com
8
FODM217 Series
ORDERING INFORMATION (Note 6)
Part Number
Package
Packing Method
Tube (100 units)
FODM217A
SOP 4-Pin
SOP 4-Pin
FODM217AR2
FODM217AV
FODM217AR2V
Tape and Reel (3000 units)
Tube (100 units)
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)
Tape and Reel (3000 units)
6. The product orderable part number system listed in this table also applies to the FODM217B, FODM217C, and FODM217D products.
www.onsemi.com
9
1.27±0.25
3
4
0.61
7.87 4.83
1.52
4.40±0.20
1.27
1
2
0.40±0.10
2.00±0.20
LAND PATTERN RECOMMENDATION
TOP VIEW
2.60±0.30
5.44±0.30
0.25±0.05
0.1±0.10
7±0.45
DETAIL A
SIDE VIEW
FRONT VIEW
GAGE
PLANE
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
4°
D. DRAWING FILENAME: MKT-MFP04DrevA
SEATING
MIN 0.5
1.30±0.30
PLANE
0.127
DETAIL A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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