FODM3011R2 [ONSEMI]

4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers;
FODM3011R2
型号: FODM3011R2
厂家: ONSEMI    ONSEMI
描述:

4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

三端双向交流开关 输出元件 光电
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FODM3011, FODM3012, FODM3022, FODM3023,  
FODM3052, FODM3053  
4-Pin Full Pitch Mini-Flat Package Random-Phase Triac  
Driver Output Optocouplers  
Features  
Description  
Compact 4-pin Surface Mount Package  
(2.4 mm Maximum Standoff Height)  
Peak Blocking Voltage  
The FODM301X, FODM302X, and FODM305X series  
consists of a GaAs infrared emitting diode driving a  
silicon bilateral switch housed in a compact 4-pin mini-  
flat package. The lead pitch is 2.54 mm. They are  
designed for interfacing between electronic controls and  
power triacs to control resistive and inductive loads for  
115 V/240 V operations.  
– 250V (FODM301X)  
– 400V (FODM302X)  
– 600V (FODM305X)  
Safety and Regulatory Approvals:  
– UL1577, 3,750 VACRMS for 1 Minute  
– DIN-EN/IEC60747-5-5, 565 V Peak Working  
Insulation Voltage  
Applications  
Industrial Controls  
Traffic Lights  
Vending Machines  
Solid State Relay  
Lamp Ballasts  
Solenoid/Valve Controls  
Static AC Power Switch  
Incandescent Lamp Dimmers  
Motor Control  
Functional Schematic  
Package Outlines  
MAIN  
TERMINAL  
1
4
3
ANODE  
MAIN  
TERMINAL  
CATHODE 2  
Figure 2. Package Outlines  
Figure 1. Functional Schematic  
©2003 Semiconductor Components Industries, LLC.  
October-2017, Rev. 2  
Publication Order Number:  
FODM3053-NF098/D  
Safety and Insulation Ratings  
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit  
data. Compliance with the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Installation Classifications per DIN VDE  
Characteristics  
< 150 VRMS  
< 300 VRMS  
I–IV  
I–III  
0110/1.89 Table 1, For Rated Mains Voltage  
Climatic Classification  
40/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Value  
Unit  
Vpeak  
Vpeak  
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR  
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC  
,
904  
VPR  
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR  
100% Production Test with tm = 1 s, Partial Discharge < 5 pC  
,
1060  
VIORM  
VIOTM  
Maximum Working Insulation Voltage  
Highest Allowable Over-Voltage  
External Creepage  
565  
6000  
5  
Vpeak  
Vpeak  
mm  
mm  
mm  
°C  
External Clearance  
5  
DTI  
TS  
Distance Through Insulation (Insulation Thickness)  
Case Temperature(1)  
0.4  
150  
IS,INPUT  
Input Current(1)  
200  
mA  
PS,OUTPUT Output Power(1)  
RIO  
Insulation Resistance at TS, VIO = 500 V(1)  
Note:  
300  
> 109  
mW  
1. Safety limit values – maximum values allowed in the event of a failure.  
www.onsemi.com  
2
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.  
Symbol  
TSTG  
TOPR  
TJ  
Parameter  
Value  
Unit  
°C  
Storage Temperature  
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
-55 to +150  
-40 to +100  
-40 to +125  
260 for 10 sec  
°C  
°C  
TSOL  
°C  
EMITTER  
IF (avg)  
IF (pk)  
Continuous Forward Current  
60  
1
mA  
A
Peak Forward Current (1 μs pulse, 300 pps.)  
Reverse Input Voltage  
VR  
3
V
PD  
Power Dissipation (No derating required over operating temp. range)  
100  
mW  
DETECTOR  
mA  
(RMS)  
IT(RMS)  
On-State RMS Current  
FODM3011, FODM3012  
70  
250  
400  
600  
300  
VDRM  
Off-State Output Terminal Voltage  
FODM3022, FODM3023  
FODM3052, FODM3053  
V
PD  
Power Dissipation (No derating required over operating temp. range)  
mW  
www.onsemi.com  
3
Electrical Characteristics  
TA = 25°C unless otherwise specified.  
Individual Component Characteristics  
Symbol  
EMITTER  
VF  
Parameter  
Test Conditions  
Device  
All  
Min.  
Typ. Max. Unit  
Input Forward Voltage  
IF = 10 mA  
1.20  
0.01  
1.50  
100  
V
IR  
Reverse Leakage Current  
VR = 3 V, TA = 25°C  
All  
μA  
DETECTOR  
Peak Blocking Current Either  
Direction  
IDRM  
Rated VDRM, IF = 0(2)  
All  
2
100  
nA  
FODM3011,  
FODM3012,  
FODM3022,  
FODM3023  
10  
Critical Rate of Rise of  
Off-State Voltage  
dV/dt  
IF = 0 (Figure 8)(3)  
V/μs  
FODM3052,  
FODM3053  
1,000  
Notes:  
2. Test voltage must be applied within dv/dt rating.  
3. This is static dv/dt. See Figure 1 for test circuit Commutating dv/dt is function of the load-driving thyristor(s) only.  
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min.  
Typ. Max. Unit  
FODM3011,  
FODM3022,  
FODM3052  
10  
mA  
5
Main Terminal  
Voltage = 3 V(4)  
IT  
LED Trigger Current  
FODM3012,  
FODM3023,  
FODM3053  
Holding Current, Either  
Direction  
IH  
All  
All  
450  
2.2  
µA  
V
Peak On-State Voltage Either  
Direction  
VTM  
I
TM = 100 mA peak  
3
Notes:  
4. All devices are guaranteed to trigger at an IF value of less than or equal to the max IFT specification. For optimum  
operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50%  
higher than the maximum IFT specification. The IFT should not exceed the absolute maximum rating of 60 mA.  
Example: For FODM0353M, the minimum IF bias should be 5 mA x 150% = 7.5 mA  
Isolation Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
All  
Min.  
Typ. Max.  
Unit  
1 Minute,  
R.H. = 40% to 60%  
Steady State Isolation  
Voltage  
VISO  
3,750  
VACRMS  
www.onsemi.com  
4
Typical Performance Characteristics  
1.8  
1.7  
1.6  
1.5  
1.4  
1000  
100  
10  
VDRM = 600 V  
TA = -40 °C  
1.3  
25 °C  
1.2  
100 °C  
1
1.1  
1.0  
0.9  
0.1  
1
10  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
IF - FORWARD CURRENT (mA)  
TA - AMBIENT TEMPERATURE (°C)  
Fig3.LEDForwardVoltagevs.ForwardCurrent  
Fig4.LeakageCurrentvs.AmbientTemperature  
10  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
VTM = 3 V  
NORMALIZED TO TA = 25 °C  
NORMALIZED TO TA = 25 °C  
1
0.1  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
TA - AMBIENT TEMPERATURE (°C)  
TA - AMBIENT TEMPERATURE (°C)  
Fig 5. Normalized Holding Current vs. Ambient Temperature  
Fig 6. Normalized Trigger Current vs. Ambient Temperature  
www.onsemi.com  
5
Typical Performance Characteristics (Continued)  
12  
10  
8
1.4  
TA = 25 °C  
NORMALIZED TO PWIN >> 100 µs  
NORMALIZED TO TA = 25 °C  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
6
4
2
0
1
10  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
PWIN - LED TRIGGER PULSE WIDTH (µs)  
TA - AMBIENT TEMPERATURE (°C)  
Fig 7. LED Current Required to Trigger vs. LED Pulse Width  
Fig 8. Normalized Off-State Output Terminal Voltage vs. Ambient Temperature  
400  
TA = 25 °C  
300  
200  
100  
0
-100  
-200  
-300  
-400  
-4  
-3  
-2  
-1  
0
1
2
3
4
VTM - ON-STATE VOLTAGE (V)  
Fig 9. On-State Characteristics  
www.onsemi.com  
6
Typical Application Information  
600 V (FODM3052)  
(FODM3053)  
400 V (FODM3022)  
(FODM3023)  
250 V (FODM3011)  
(FODM3012)  
1. The mercury wetted relay provides a high speed  
repeated pulse to the D.U.T.  
2. 100x scope probes are used, to allow high speeds and  
voltages.  
3. The worst-case condition for static dv/dt is established by  
triggering the D.U.T. with a normal LED input current,  
RTEST  
Vdc  
R = 10 kΩ  
CTEST  
PULSE  
INPUT  
MERCURY  
WETTED  
RELAY  
then removing the current.The variable R  
allows the  
TEST  
X100  
SCOPE  
PROBE  
dv/dt to be gradually increased until the D.U.T. continues  
to trigger in response to the applied voltage pulse, even  
after the LED current has been removed. The dv/dt is  
D.U.T.  
then decreased until the D.U.T. stops triggering. τ is  
RC  
measured at this point and recorded.  
V
= 600 V (FODM3052, FODM3053)  
= 400 V (FODM3022, FODM3023)  
= 250 V (FODM3011, FODM3012)  
max  
APPLIED VOLTAGE  
WAVEFORM  
378 V (FODM3052, FODM3053)  
252 V (FOMD3022, FODM3023)  
158 V (FODM3011, FODM3012)  
0.63 V  
378  
max  
dv/dt =  
=
(FODM3053)  
(FODM3052)  
τ
τ
0 VOLTS  
RC  
RC  
τ
RC  
252  
=
=
(FODM3023)  
(FODM3022)  
τ
RC  
158  
(FODM3011)  
(FODM3012)  
τ
RC  
NOTE: This optoisolator should not be used to drive a load directly. It is  
intended to be a trigger device only.  
Figure 10. Static dv/dt Test Circuit  
RL  
Rin  
Ω
180  
1
2
4
3
VCC  
120 V  
60 Hz  
FODM3011  
FODM3012  
FODM3022  
FODM3023  
FODM3052  
FODM3053  
Figure 11. Resistive Load  
ZL  
Rin  
Ω
Ω
2.4 k  
180  
1
2
4
3
VCC  
FODM3011  
FODM3012  
FODM3022  
FODM3023  
FODM3052  
FODM3053  
120 V  
60 Hz  
C1  
0.1 μF  
Figure 12. Inductive Load with Sensitive Gate Triac (IGT 15 mA)  
www.onsemi.com  
7
Typical Application Information (Continued)  
Rin  
360 Ω  
470 Ω  
1
4
HOT  
VCC  
FODM3022  
FODM3023  
FODM3052  
FODM3053  
39 Ω  
0.05 μF  
240  
VAC  
2
3
0.01 μF  
LOAD  
GROUND  
In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.  
The 39 Ω resistor and 0.01μF capacitor are for snubbing of the triac, and the 470 Ω resistor and 0.05 μF capacitor are  
for snubbing the coupler. These components may or may not be necessary depending upon the particular and load used.  
Figure 13.Typical Application Circuit  
www.onsemi.com  
8
Reflow Profile  
Max. Ramp-up Rate = 3°C/S  
Max. Ramp-down Rate = 6°C/S  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
Tsmax  
t
L
Preheat Area  
Tsmin  
t
s
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
Profile Freature  
Pb-Free Assembly Profile  
150°C  
Temperature Min. (Tsmin)  
Temperature Max. (Tsmax)  
200°C  
Time (t ) from (Tsmin to Tsmax)  
60–120 seconds  
3°C/second max.  
217°C  
S
Ramp-up Rate (t to t )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60–150 seconds  
260°C +0°C / –5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Ramp-down Rate (T to T )  
6°C/second max.  
8 minutes max.  
P
L
Time 25°C to Peak Temperature  
www.onsemi.com  
9
Ordering Information  
Part Number  
Package  
Full Pitch Mini-Flat 4-Pin  
Full Pitch Mini-Flat 4-Pin  
Packing Method  
Tube (100 units)  
FODM3011  
FODM3011R2  
FODM3011V  
FODM3011R2V  
Tape and Reel (2500 Units)  
Tube (100 Units)  
Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option  
Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option  
Tape and Reel (2500 Units)  
Note:  
The product orderable part number system listed in this table also applies to the FODM3012, FODM3022, FODM3023,  
FODM3052, and FODM3053 products.  
Marking Information  
1
2
3011  
6
V X YY R  
3
4
5
Figure 14. Top Mark  
Table 1. Top Mark Definitions  
1
2
3
4
5
6
ON Semiconductor Logo  
Device Number  
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)  
One-Digit Year Code, e.g., “6”  
Digit Work Week, Ranging from “01” to “53”  
Assembly Package Code  
www.onsemi.com  
10  
Tape Specifications  
P
2
D0  
P
0
t
K0  
E
A0  
W
W
1
B0  
F
d
D1  
P
2.54 Pitch  
Description  
Symbol  
Dimensions  
12.00 0.4  
0.35 0.02  
4.00 0.20  
1.55 0.20  
1.75 0.20  
5.50 0.20  
2.00 0.20  
8.00 0.20  
4.75 0.20  
7.30 0.20  
2.30 0.20  
1.55 0.20  
9.20  
Tape Width  
W
t
Tape Thickness  
Sprocket Hole Pitch  
Sprocket Hole Dia.  
Sprocket Hole Location  
Pocket Location  
P
0
D0  
E
F
P2  
P
Pocket Pitch  
Pocket Dimension  
A0  
B0  
K0  
D1  
W1  
d
Pocket Hole Dia.  
Cover Tape Width  
Cover Tape Thickness  
0.065 0.02  
Max. Component Rotation or Tilt  
Devices Per Reel  
20° max  
2500  
Reel Diameter  
330 mm (13")  
www.onsemi.com  
11  
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
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