FODM3012R2V-NF098 [ONSEMI]
双向三端可控硅驱动器，随机相位，250V，5mA;
| 型号： | FODM3012R2V-NF098 |
| 厂家： | 
ONSEMI |
| 描述： | 双向三端可控硅驱动器，随机相位，250V，5mA 驱动 驱动器 可控硅 |
| 文件： | 总10页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
4-Pin Full Pitch Mini-Flat
Package Random-Phase
Triac Driver Output
Optocouplers
MFP−4
CASE 100AP
FODM3011, FODM3012,
FODM3022, FODM3023,
FODM3052, FODM3053
MARKING DIAGRAM
Description
The FODM301X, FODM302X, and FODM305X series consists
of a GaAs infrared emitting diode driving a silicon bilateral switch
housed in a compact 4−pin mini−flat package. The lead pitch is
2.54 mm. They are designed for interfacing between electronic
controls and power triacs to control resistive and inductive loads
for 115 V/240 V operations.
3011
VXYYR
3011 = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
= One Digit Year Code, e.g., “6”
= Digit Work Week, Ranging from “01” to “53”
= Assembly Package Code
Features
X
YY
R
• Compact 4−pin Surface Mount Package
(2.4 mm Maximum Standoff Height)
• Peak Blocking Voltage
♦ 250 V (FODM301X)
FUNCTIONAL SCHEMATIC
♦ 400 V (FODM302X)
♦ 600 V (FODM305X)
MAIN
TERMINAL
1
2
4
3
ANODE
• Safety and Regulatory Approvals:
♦ UL1577, 3,750 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 565 V Peak Working
MAIN
TERMINAL
Insulation Voltage
• These are Pb−Free Devices
CATHODE
Applications
• Industrial Controls
• Traffic Lights
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
• Vending Machines
• Solid State Relay
• Lamp Ballasts
• Solenoid/Valve Controls
• Static AC Power Switch
• Incandescent Lamp Dimmers
• Motor Control
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
March, 2022 − Rev. 4
FODM3053−NF098/D
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
<150 V
<300 V
I–IV
I–III
RMS
RMS
Climatic Classification
40/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
904
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1060
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
6000
≥5
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
≥5
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
≥0.4
150
200
300
T
S
I
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−55 to +150
−40 to +100
−40 to +125
260 for 10 s
°C
°C
°C
°C
STG
OPR
T
T
J
T
SOL
EMITTER
I
Continuous Forward Current
Reverse Input Voltage
60
3
mA
V
F(avg)
V
R
P
D
Power Dissipation (No Derating Required over Operating Temp. Range)
100
mW
DETECTOR
I
Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave)
On−State RMS Current
1
A
(PEAK)
TSM
I
70
mA
(RMS)
TM(RMS)
V
FODM3011, FODM3012
FODM3022, FODM3023
FODM3052, FODM3053
Power Dissipation (No Derating Required over Operating Temp. Range)
250
400
600
300
V
Off−State Output Terminal Voltage
DRM
P
mW
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise specified)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
EMITTER
V
Input Forward Voltage
All
I = 10 mA
−
−
1.20
0.01
1.50
100
V
F
F
I
R
Reverse Leakage Current All
V
R
= 3 V, T = 25°C
mA
A
DETECTOR
I
Peak Blocking Current
Either Direction
All
Rated V
, I = 0 (Note 2)
−
−
2
100
nA
DRM
DRM
F
dV/dt
Critical Rate of Rise of
Off−State Voltage
FODM3011,
FODM3012,
FODM3022,
FODM3023
I = 0 (Note 3)
F
10
−
V/ms
FODM3052,
FODM3053
1,000
−
−
TRANSFER CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Main Terminal Voltage = 3 V
Min
Typ
Max
Unit
I
FT
LED Trigger Current
FODM3011,
FODM3022, (Note 4)
FODM3052
−
−
10
mA
FODM3012,
FODM3023,
FODM3053
−
−
5
I
Holding Current, Either
Direction
All
−
−
450
2.2
−
mA
H
V
TM
Peak On−State Voltage
Either Direction
All
I
= 100 mA peak
3
V
TM
ISOLATION CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
V
ISO
Steady State Isolation
Voltage
All
1 Minute,
R.H. = 40% to 60%
3,750
−
−
VAC
RMS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt. Commutating dv/dt is function of the load−driving thyristor(s) only.
4. All devices are guaranteed to trigger at an I value of less than or equal to the max I specification. For optimum operation over temperature
F
FT
and lifetime of the device, the LED should be biased with an I that is at least 50% higher than the maximum I specification. The I should
F
FT
FT
not exceed the absolute maximum rating of 60 mA. Example: For FODM3053M, the minimum I bias should be 5 mA x 150% = 7.5 mA.
F
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3
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
TYPICAL PERFORMANCE CHARACTERISTICS
1000
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
DRM
= 600 V
100
10
1
T = −40°C
A
25°C
100°C
0.1
1
10
I , FORWARD CURRENT (mA)
100
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
F
Figure 2. Leakage Current vs. Ambient
Temperature
Figure 1. LED Forward Voltage vs. Forward
Current
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 3 V
NORMALIZED TO T = 25°C
TM
A
NORMALIZED TO T = 25°C
A
1
0.1
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 4. Normalized Trigger Current vs. Ambient
Temperature
Figure 3. Normalized Holding Current vs. Ambient
Temperature
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4
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
12
10
8
1.4
T = 25°C
NORMALIZED TO T = 25°C
A
A
NORMALIZED TO PW >> 100 ms
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
IN
6
4
2
0
1
100
10
−40
−20
0
20
40
60
80
100
PW , LED TRIGGER PULSE WIDTH (ms)
IN
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. LED Current Required to Trigger
vs. LED Pulse Width
Figure 6. Normalized Off−State Output
Terminal Voltage vs. Ambient Temperature
400
T = 25°C
A
300
200
100
0
−100
−200
−300
−400
−3
−2
−1
0
1
2
3
4
−4
V
TM,
ON−STATE VOLTAGE (V)
Figure 7. On−State Characteristics
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5
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
TYPICAL APPLICATION INFORMATION
RL
Rin
Ω
180
1
2
4
3
VCC
120 V
60 Hz
FODM3011
FODM3012
FODM3022
FODM3023
FODM3052
FODM3053
Figure 8. Resistive Load
ZL
Rin
180
2.4 kΩ
Ω
1
2
4
3
VCC
FODM3011
FODM3012
FODM3022
FODM3023
FODM3052
FODM3053
120 V
60 Hz
0.1 μF
C1
Figure 9. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
Rin
Ω
470
360
Ω
1
2
4
3
HOT
VCC
FODM3022
FODM3023
FODM3052
FODM3053
39 Ω
0.05 μF
240
VAC
0.01 μF
LOAD
GROUND
In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side. The 39 W resistor and 0.01 mF capacitor are
for snubbing of the trisc, and the 470 W resistor and 0.05 mF capacitor are for snubbing the coupler. These components may or may not be
necessary depending upon the particular and load used.
Figure 10. Typical Application Circuit
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6
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
REFLOW PROFILE
Maximum Ramp−up Rate = 3°C/s
Maximum Ramp−down Rate = 6°C/s
T
P
260
240
t
P
T
L
220
200
180
160
140
120
T
smax
T
L
Preheat Area
T
smin
t
s
100
80
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Figure 11. Reflow Profile
Table 1. REFLOW PROFILE
Profile Freature
Temperature Minimum (T
Pb−Free Assembly Profile
150°C
)
smin
Temperature Maximum (T
)
200°C
smax
Time (t ) from (T
to T )
smax
60 – 120 seconds
3°C/second maximum
217°C
S
smin
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
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7
FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053
ORDERING INFORMATION (Note 5)
†
Part Number
Package
Full Pitch Mini−Flat 4−Pin
Shipping
FODM3011−NF098
FODM3011R2−NF098
FODM3011V−NF098
FODM3011R2V−NF098
100 Units / Tube
2500 / Tape & Reel
100 Units / Tube
Full Pitch Mini−Flat 4−Pin
Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
5. The product orderable part number system listed in this table also applies to the FODM3012, FODM3022, FODM3023, FODM3052, and
FODM3053 products.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP4 3.85X4.4, 2.54P
CASE 100AP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13488G
MFP4 3.85X4.4, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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