FODM8801AR2V [ONSEMI]
OptoHiT™ 系列，高温光电晶体管;
| 型号： | FODM8801AR2V |
| 厂家： | 
ONSEMI |
| 描述： | OptoHiT™ 系列，高温光电晶体管 局域网 输出元件 晶体管 光电晶体管 |
| 文件： | 总11页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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HALF−PITCH MINI−FLAT
OptoHiTE Series,
Phototransistor
High-Temperature
Optocoupler in Half-Pitch
Mini-Flat 4-Pin Package
MFP4 2.5 x 4.4, 1.27P
CASE 100AL
MARKING DIAGRAM
FODM8801A, FODM8801B,
FODM8801C
ON
8801x
VXYYM
Description
In the OptoHiT series, the FODM8801 is a first−of−kind
phototransistor, utilizing onsemi’s leading−edge proprietary process
technology to achieve high operating temperature characteristics, up
to 125°C. The opto−coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light−emitting diode (LED) optically coupled to a
phototransistor, available in a compact half−pitch, mini− flat, 4−pin
package. It delivers high current transfer ratio at very low input
8801x = Specific Device Code (x = A, B, C)
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
X
= One−Digit Year Code
YY
M
= Digit Work Week
= Assembly Package Code
current. The input−output isolation voltage, V , is rated at 3750
ISO
VAC
.
RMS
PIN CONNECTIONS
Features
• Utilizing Proprietary Process Technology to Achieve High Operating
1
4
COLLECTOR
ANODE
Temperature: Up to 125°C
• Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
♦ Excellent CTR Linearity at High−Temperature
CATHODE 2
3 EMITTER
♦ CTR at Very Low Input Current, I
F
• High Isolation Voltage Regulated by Safety Agency:
C−UL / UL1577, 3750 VAC
DIN EN/IEC60747−5−5
for 1 Minute and
RMS
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
• Compact Half−Pitch, Mini−Flat, 4−Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height)
• >5 mm Creepage and Clearance Distance
• Applicable to Infrared Ray Reflow, 245°C
• These are Pb−Free Devices
Applications
• Primarily Suited for DC−DC Converters
• Ground−Loop Isolation, Signal−Noise Isolation
• Communications – Adapters, Chargers
• Consumer – Appliances, Set−Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic
Control
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
December, 2022 − Rev. 7
FODM8801A/D
FODM8801A, FODM8801B, FODM8801C
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
<150 V
<300 V
I–IV
I–III
RMS
RMS
Climatic Classification
40/125/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
848
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1060
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge <5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
6000
≥5
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
≥5
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
≥0.5
150
200
300
T
S
I
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +150
−40 to +125
−40 to +140
245 for 10 s
°C
°C
°C
°C
STG
OPR
T
T
J
T
SOL
EMITTER
IF
Continuous Forward Current
Reverse Input Voltage
20
6
mA
V
(average)
V
R
PD
Power Dissipation (Note 2, 4)
40
mW
LED
DETECTOR
IC
Continuous Collector Current
Collector−Emitter Voltage
Emitter−Collector Voltage
30
75
7
mA
V
(average)
V
CEO
V
ECO
V
PD
Collector Power Dissipation (Note 3, 4)
150
mW
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Derate linearly from 73°C at a rate of 0.24 mW/°C.
3. Derate linearly from 73°C at a rate of 2.23 mW/°C.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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2
FODM8801A, FODM8801B, FODM8801C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
°C
T
A
Operating Temperature
Input Low Voltage
−40 to +125
−5.0 to +0.8
1 to 10
V
V
FL(OFF)
I
FH
Input High Forward Current
mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
f = 60 Hz, t = 1 min., I ≤ 10 mA
Min
Typ
Max
Unit
VAC
V
ISO
Input−Output Isolation Voltage
3,750
−
−
I−O
RMS
(Note 5, 6)
12
R
C
Isolation Resistance
Isolation Capacitance
V
= 500 V (Note 5)
10
−
−
W
ISO
ISO
I−O
f = 1 MHz
−
0.3
0.5
pF
5. Device is considered a two−terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
6. 3,750 VAC for 1 minute is equivalent to 4,500 VAC for 1 second.
RMS
RMS
ELECTRICAL CHARACTERISTICS Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified.)
A
All typical values are measured at T = 25°C
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
EMMITER
V
Forward Voltage
I = 1 mA
1.00
−
1.35
−1.6
−
1.80
−
V
mV/°C
mA
F
F
DV / DT
Forward−Voltage Coefficient
Reverse Current
I = 1 mA
F
F
A
I
R
V
R
= 6 V
−
10
−
C
Terminal Capacitance
V = 0 V, f = 1 MHz
−
30
pF
T
DETECTOR
BV
BV
Collector−Emitter Breakdown Voltage
Emitter−Collector Breakdown Voltage
Collector Dark Current
I
= 0.5 mA, I = 0 mA
75
7
130
12
−
−
−
V
CEO
ECO
C
F
I = 100 mA, I = 0 mA
E
V
F
I
V
= 75 V, I = 0 mA, T = 25°C
−
100
50
30
−
nA
mA
mA
pF
CEO
CE
CE
CE
CE
F
A
V
V
V
= 50 V, I = 0 mA
−
−
F
= 5 V, I = 0 mA
−
−
F
C
Capacitance
= 0 V, f = 1 MHz
−
8
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FODM8801A, FODM8801B, FODM8801C
TRANSFER CHARACTERISTICS Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified.)
A
All typical values are measured at T = 25°C
A
Symbol
CTR
Parameter
Device
Conditions
I = 1.0 mA, V = 5 V @ T = 25°C
Min
80
35
40
45
130
65
70
75
200
100
110
115
65
30
25
20
90
45
40
35
140
75
65
55
−
Typ
120
120
125
138
195
195
202
215
300
300
312
330
108
108
104
92
Max
160
230
−
Unit
Current Transfer
Ratio
(Collector−Emitter)
FODM8801A
%
CE
F
CE
A
I = 1.0 mA, V = 5 V
F
CE
I = 1.6 mA, V = 5 V
F
CE
I = 3.0 mA, V = 5 V
−
F
CE
FODM8801B
FODM8801C
FODM8801A
FODM8801B
FODM8801C
I = 1.0 mA, V = 5 V @ T = 25°C
260
360
−
F
CE
A
I = 1.0 mA, V = 5 V
F
CE
I = 1.6 mA, V = 5 V
F
CE
I = 3.0 mA, V = 5 V
−
F
CE
I = 1.0 mA, V = 5 V @ T = 25°C
400
560
−
F
CE
A
I = 1.0 mA, V = 5 V
F
CE
I = 1.6 mA, V = 5 V
F
CE
I = 3.0 mA, V = 5 V
−
F
CE
CTR
Saturated Current
Transfer Ratio
(Collector−Emitter)
I = 1.0 mA, V = 0.4 V @ T = 25°C
150
−
%
CE(SAT)
F
CE
A
I = 1.0 mA, V = 0.4 V
F
CE
I = 1.6 mA, V = 0.4 V
−
F
CE
I = 3.0 mA, V = 0.4 V
−
F
CE
I = 1.0 mA, V = 0.4 V @ T = 25°C
168
168
155
132
238
238
215
177
0.17
0.16
0.15
0.17
0.16
0.16
0.18
0.17
0.17
245
−
F
CE
A
I = 1.0 mA, V = 0.4 V
F
CE
I = 1.6 mA, V = 0.4 V
−
F
CE
I = 3.0 mA, V = 0.4 V
−
F
CE
I = 1.0 mA, V = 0.4 V @ T = 25°C
380
−
F
CE
A
I = 1.0 mA, V = 0.4 V
F
CE
I = 1.6 mA, V = 0.4 V
−
F
CE
I = 3.0 mA, V = 0.4 V
−
F
CE
V
Saturation Voltage
FODM8801A
FODM8801B
FODM8801C
I = 1.0 mA, I = 0.3 mA
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
V
CE(SAT)
F
C
I = 1.6 mA, I = 0.4 mA
−
F
C
I = 3.0 mA, I = 0.6 mA
−
F
C
I = 1.0 mA, I = 0.45 mA
−
F
C
I = 1.6 mA, I = 0.6 mA
−
F
C
I = 3.0 mA, I = 1.0 mA
−
F
C
I = 1.0 mA, I = 0.75 mA
−
F
C
I = 1.6 mA, I = 1.0 mA
−
F
C
I = 3.0 mA, I = 1.6 mA
−
F
C
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4
FODM8801A, FODM8801B, FODM8801C
SWITCHING CHARACTERISTICS Apply over all recommended conditions (T = −40°C to +125°C unless otherwise specified).
A
All typical values are measured at T = 25°C
A
Symbol
Parameter
Turn−On Time
Device
Conditions
Min
1
Typ
6
Max
20
−
Unit
t
All Devices
ms
I = 1.6 mA, V = 5 V, R = 0.75 kW
ON
F
CC
L
I = 1.6 mA, V = 5 V, R = 4.7 kW
−
6
F
CC
L
t
Turn−Off Time
All Devices
1
6
20
−
ms
I = 1.6 mA, V = 5 V, R = 0.75 kW
OFF
F
CC
L
I = 1.6 mA, V = 5 V, R = 4.7 kW
−
40
5
F
CC
L
t
R
Output Rise Time
(10% to 90%)
All Devices I = 1.6 mA, V = 5 V, R = 0.75 kW
−
−
ms
ms
F
CC
L
t
F
Output Fall Time
(90% to 10%)
All Devices I = 1.6 mA, V = 5 V, R = 0.75 kW
−
−
5.5
20
−
−
F
CC
L
CM
Common−Mode Rejection
Voltage (Transient Immunity) –
Output High
All Devices T = 25°C, I = 0 mA, V > 2.0 V,
kV/ms
H
A
F
O
R = 4.7 kW, V = 1000 V (Note 7),
L
CM
Figure 14
CM
Common−Mode Rejection
Voltage (Transient Immunity) –
Output Low
All Devices T = 25°C, I = 1.6 mA, V < 0.8 V,
−
20
−
kV/ms
L
A
F
O
R = 4.7 kW, V = 1000 V (Note 7),
L
CM
Figure 14
7. Common−mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common−mode
impulse signal, V , to assure that the output remains high.
CM
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5
FODM8801A, FODM8801B, FODM8801C
TYPICAL PERFORMANCE CURVES
100
10
100
T
A
= 25°C
V
= 5.0 V
CE
10
1.0
0.1
V
= 0.4 V
CE
T
A
= 125°C
= 25°C
T
A
= −40°C
1.0
0.1
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0.1
1
10
100
V – FORWARD VOLTAGE (V)
F
I – FORWARD CURRENT (mA)
F
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Collector Current vs. Forward Current
1000
10
V
T
= 5 V
= 25°C
VCE = 5 V
TA = 25°C
CE
A
NORMALIZED TO IF = 1 mA
100
1.0
10
0.1
0.1
0.1
1
10
100
1
10
100
I – FORWARD CURRENT (mA)
F
I – FORWARD CURRENT (mA)
F
Figure 3. Current Transfer Ratio vs. Forward Current
Figure 4. Normalized CTR vs. Forward Current
1.2
1.2
V
= 2 V
V
= 5 V
CE
CE
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
I
= 2 mA
= 1 mA
I
= 2 mA
= 1 mA
F
F
I
F
= 0.5 mA
I = 0.5 mA
F
I
F
I
F
0
0
−40 −20
0
20 40
60
80 100 120 140
−40 −20
0
20 40
60
80 100 120 140
T – AMBIENT TEMPERATURE (°C)
A
T – AMBIENT TEMPERATURE (°C)
A
Figure 5. Normalized CTR vs. Ambient Temperature
Figure 6. Normalized CTR vs. Ambient Temperature
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6
FODM8801A, FODM8801B, FODM8801C
TYPICAL PERFORMANCE CURVES (continued)
100
10
40
T
A
= 25°C
V
= 5 V
CE
35
30
25
20
15
10
5
I
I
= 20 mA
F
= 10 mA
= 5.0 mA
= 3.0 mA
F
F
I
F
= 15 mA
I
I
F
I
F
= 20 mA
I
I
= 1.6 mA
= 1.0 mA
F
I
F
= 10 mA
F
I
F
= 5 mA
1.0
I
= 0.5 mA
F
I
F
= 1 mA
0.1
−40 −20
0
0
20
40
60
80
100 120
0
1
2
3
4
5
T – AMBIENT TEMPERATURE (°C)
A
VCE – COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Collector Current vs.
Ambient Temperature
Figure 8. Collector Current vs.
Collector−Emitter Voltage
100000
1000
VCE = 5 V
TA = 25°C
IF = 1.6 mA
10000
1000
100
10
V
= 75 V
CE
100
10
1
t
OFF
V
= 48 V
CE
t
F
V
= 24 V
CE
V
= 10 V
CE
t
ON
t
R
1
V
= 5 V
40
CE
0.1
0.01
0.1
100
−20
0
20
60
80
100 120
−40
10
100
T – AMBIENT TEMPERATURE (°C)
A
RL – LOAD RESISTANCE (kW)
Figure 9. Collector Dark Current vs.
Ambient Temperature
Figure 10. Switching Time vs. Load Resistance
0.35
0.30
0.25
300
V
= 5 V, I = 3 mA
F
CE
V
= 5 V, I = 1 mA
F
250
200
150
100
50
CE
V
= 5 V, I = 1.6 mA
F
CE
I
F
= 1.6 mA, I = 1.6 mA
C
V
= 0.4 V, I = 1 mA
F
CE
0.20
0.15
0.10
0.05
0.00
I
F
= 3.0 mA, I = 1.8 mA
C
V
= 0.4 V, I = 1.6 mA
CE F
V
= 0.4 V, I = 3 mA
F
CE
−40
−20
0
20
40
60
80
100 120
−40 −20
0
20 40
60 80
100 120
T – AMBIENT TEMPERATURE (°C)
A
T – AMBIENT TEMPERATURE (°C)
A
Figure 11. Collector−Emitter Saturation Voltage
Figure 12. Current Transfer Ration vs.
Ambient Temperature
vs. Ambient Temperature
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7
FODM8801A, FODM8801B, FODM8801C
TEST CIRCUITS
+5 V
R = 4.7 kW
L
I
F
+
V
O
Pulse Generator:
t = 5 ns
V
O
Monitoring Node
1
4
3
r
Z
O
= 50 W
PW =50 ms
GND
DC = 1%
I Monitor
F
2
R
M
(I = 1.6 mA)
F
Input Pulse
t
R
t
F
5 V
90%
Output Pulse
10%
V
OL
t
t
OFF
ON
Figure 13. Test Circuit for Propagation Delay, Rise Time, and Fall Time
+5 V
R = 4.7 kW
L
I
F
+
1
2
4
3
V
O
Monitoring Node
SW
GND
R
M
V
CM
Pulse Gen
1 kV
0 V
V
CM
90%
10%
V
OH
V
O
(I = 0 mA)
F
2 V
0.8 V
V
O
(I = 1.6 mA)
F
V
OL
Figure 14. Test Circuit for Instantaneous Common−Mode Rejection Voltage
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8
FODM8801A, FODM8801B, FODM8801C
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
260
T
P
245
240
t
P
T
L
220
200
180
Tsmax
t
L
160
140
Tsmin
t
S
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Figure 15. Reflow Profile
Table 1. REFLOW PROFILE
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60 – 120 seconds
3°C/second maximum
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
245°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 245°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
ORDERING INFORMATION
†
Part Number
FODM8801A
Package
Half Pitch Mini−Flat 4−Pin
Shipping
150 Units / Tube
2500 / Tape & Reel
150 Units / Tube
FODM8801AR2
FODM8801AV
FODM8801AR2V
Half Pitch Mini−Flat 4−Pin
Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
8. The product orderable part number system listed in this table also applies to the FODM8801B, FODM8801C products.
OptoHIT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP4 2.5X4.4, 1.27P
CASE 100AL
ISSUE O
DATE 31 AUG 2016
0.3−0.51
2
1
PIN ONE
0.61
3
4
0.55−0.75
2.31−2.69
1.27
2.39 (Max)
LAND PATTERN RECOMMENDATION
1.95−2.11
0−0.20
R0.15 (Typ)
2
\:̇
R0.15 (Typ)
1.27+/− .127
NOTES:
0.30−0.89
1.19 (Typ)
0.18−0.25
A) NO STANDARD APPLIES TO THIS PACKAGE
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13485G
MFP4 2.5X4.4, 1.27P
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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