FPAB30BH60B [ONSEMI]

用于单相升压功率因数校正的 PFC SPM® 3 系列;


型号：	FPAB30BH60B
厂家：	ONSEMI
描述：	用于单相升压功率因数校正的 PFC SPM® 3 系列局域网电动机控制功率因数校正光电二极管
文件：	总13页 (文件大小：1043K)
中文：	中文翻译
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2014 年 9 月

FPAB30BH60B

用于单相升压功率因数校正的 PFC SPM^®3 系列

特性

概述

• 通过 UL 第 E209204 号认证 (UL1557)

FPAB30BH60B 是一种先进的 PFC SPM^®3 模块，为消

费、医药和工业应用提供非常全面的高性能升压功率因数

校正输入功率平台。这些单相模块综合优化了内置 IGBT

的栅极驱动以最小化电磁干扰和能量损耗。同时也提供多

重模组保护特性，集成欠压闭锁，过流保护，热量监测和

故障报告。这些模块内的全波整流器和高性能输出二极

管，为额外节省空间和方便安装起到了重要作用。

• 600 V - 30 A 单相升压功率因数校正，包含栅极驱动和

保护的控制 IC

• 采用 DBC (Al₂O₃) 基板实现非常低的热阻

• 全波桥式整流器和高性能输出二极管

• 内置负温度系数热敏电阻可实现温度监测

• 针对 20 kHz 开关频率进行优化

• 绝缘等级：2500 Vrms / 分钟

应用

• 单相升压功率因数校正转换器

相关资料

• AN-9090 - PFC SPM 3 Series User’s Guide

• AN-9091 - Boost PFC Inductor Design Guide

图 1. 封装概览

封装标识与定购信息

器件

器件标识

封装

包装类型

数量

FPAB30BH60B

SPMIC-027

Rail

www.fairchildsemi.com

FPAB30BH60B Rev. C4

集成的功率功能

PFC 转换器，适用于单相 AC/DC 功率变换（请参见图 3）

•

集成的驱动、保护和系统控制功能

•

对于 IGBT：栅极驱动电路、过流保护 (OCP)、控制电源欠压锁定 (UVLO) 保护

故障信号：对应 OC 和 UV 故障

内置热敏电阻：温度监控

输入接口：高电平有效接口，可用于 3.3 / 5 V 逻辑电平，施密特触发脉冲输入

引脚配置

Top View

12.205

(1)V

(21)P

(2)COM

(3)COM

(4)COM

(5)IN

(22)P

(6)V

(23)N.C

FOD

(7)C

(8)C

(9)R

(10)V

(24)L

(25)PR

(26)R

(27)S

Case Temperature (T )

Detecting Point

(11)N.C

(12)N.C

(13)N

(14)N

(15)N

(16)N

(17)NR

(18)NR

DBC Substrate

(19)NR

(20)NR

图 2. 俯视图

注：

1. 关于壳体温度 (T ) 的测量点，请参见图 2。

FPAB30BH60B Rev. C4

www.fairchildsemi.com

引脚描述

引脚号

引脚名

V_CC

COM

引脚描述

2,3,4

驱动 IC 和 IGBT 的通用偏置电压

公共电源接地

IGBT 信号输入

V_FO

C_FOD

C_SC

R_(TH)

V_(TH)

N.C

故障输出

设置故障输出持续时间的电容

过电流感测电容（低通滤波器）

供热敏电阻使用的串联电阻器

热敏电阻偏压

11,12

13~16

17~20

21,22

无连接

IGBT 发射极

整流器直流负端

直流正端

N_R

N.C

无连接

电感器连接引脚

整流器直流正端

R 相的交流输入

S 相的交流输入

P_R

* 引脚 11 和引脚 12 被切除。更多详细信息请参照产品封装外形图。

内部等效电路与输入 / 输出引脚

(10) VTH

NTC

Thermistor

(21,22) P

(24) L

(9) RTH

(8) CSC

(7) CFOD

(6) VFO

CSC

CFOD

VFO

(25) PR

(5) IN

OUT

(26) R

(27) S

(2~4) COM

(1) VCC

COM

VCC

(13~16) N

(17~20) NR

图 3. 内部框图

FPAB30BH60B Rev. C4

www.fairchildsemi.com

绝对最大额定值（T_J= 25°C，除非另有说明。）

转换器部分

符号

V_i

项目

条件

额定值

264

单位

V_rms

施加在 R - S 之间

施加在 P - N 之间

电源电压

V_{i （浪涌）}

V_PN

500

电源电压（浪涌）

输出电压

450

V_{PN （浪涌）}

V_CES

I_C

500

输出电压（浪涌）

集电极 - 发射极之间电压

单个 IGBT 的集电极电流

单个 IGBT 的集电极电流（峰值）

集电极功耗

600

T_C= 25°C, T_J< 150°C

I_CP

T_C= 25°C, T_J< 150°C, 脉冲宽度小于 1ms

T_C= 25°C

P_C

104

V_RRM

I_FSM

600

重复反向峰值电压

正向浪涌峰值电流

工作结温

350

单一正弦半波

T_J

-40 ~ 150

°C

控制部分

符号

V_CC

V_IN

项目

控制电源电压

条件

施加在 V_CC- COM 之间

施加在 IN - COM 之间

施加在 V_FO- COM 之间

额定值

单位

-0.3 ~ V_CC+0.3

输入信号电压

V_FO

I_FO

故障输出电源电压

故障输出电流

_FO引脚处的灌电流

V_SC

施加在 C_SC- COM 之间

-0.3 ~ V_CC+0.3

电流感测输入电压

整个系统

符号

T_STG

V_ISO

项目

存储温度

条件

额定值

-40 ~ 125

2500

单位

°C

60 Hz，正弦波形，交流 1 分钟，连接陶瓷基板

到引脚

V_rms

绝缘电压

热阻

符号

项目

条件

最小值典型值最大值单位

IGBT

FRD

1.2

1.4

1.7

°C/W

结点 - 壳体的热阻

(j-c)Q

(j-c)F

整流器（每 1 / 4 模块）

(j-c)R

FPAB30BH60B Rev. C4

www.fairchildsemi.com

电气特性（T_J= 25°C，除非另有说明。）

转换器部分

符号

V_CE(SAT)

V_FF

项目

条件

V_CC= 15 V, V_IN= 5 V, I_C= 30 A

I_F= 30 A

最小值典型值最大值单位

2.2

1.9

1.2

500

200

420

100

2.8

IGBT 饱和电压

2.6

快速恢复二极管正向电压

整流器正向电压

开关时间

V_FR

I_F= 30 A

1.5

t_ON

V_PN= 400 V, V_CC= 15V, I_C= 30 A

_IN= 0 V ↔ 5 V，电感负载

t_C(ON)

t_OFF

t_C(OFF)

t_rr

（注 2）

I_rr

I_CES

V_CE= V_CES

250

μA

集电极 - 发射极间漏电流

注：

2. t 和 t

包括模块内部驱动 IC 的传输延迟时间。 t

和 t

指在内部给定的栅极驱动条件下， IGBT 本身的开关时间。详细信息，请参见图 4。

OFF

C(ON)

C(OFF)

I_rr

120%of I_C

100%of I_C

V_CE

I_C

90% of I_C

15% of V_CE

10%of I_C

15%of V_CE

10%of I_C

I_C

V_CE

t_ON

t_rr

t_C(ON)

t_C(OFF)

t_OFF

(a) Turn-on

(b) Turn-off

图 4. 开关时间的定义

FPAB30BH60B Rev. C4

www.fairchildsemi.com

控制部分

符号

I_QCCL

V_FOH

项目

条件

最小值典型值最大值单位

_CC静态电源电流

V_CC= 15 V, IN = 0 V V_CC- COM

V_SC= 0 V, V_FO电路：4.7 kΩ 至 5 V 上拉

V_SC= 1 V, V_FO电路：4.7 kΩ 至 5 V 上拉

V_CC= 15 V

4.5

故障输出电压

V_FOL

0.8

0.55

13.0

13.2

2.0

V_SC(ref)

UV_CCD

UV_CCR

t_FOD

0.45

10.7

11.2

1.4

2.8

0.50

11.9

12.4

1.8

过电流保护触发电平

电源电路欠压保护

检测电平

复位电平

C_FOD= 33 nF （注 3）

施加在 IN - COM 之间

故障输出脉宽

导通阈值电压

关断阈值电压

热敏电阻的阻值

V_IN(ON)

V_IN(OFF)

R_TH

0.8

当 T_TH= 25°C 时（注 4，图 5）

当 T_TH= 100°C 时（注 4，图 5）

47.0

2.9

kΩ

注：

3. 故障输出脉宽 t

-6

取决于电容 C

的值，可采用下面的近似公式进行计算：C

= 18.3 x 10 x t

[F]。

FOD

4. T 是壳体温度 (T ) 的温度，请根据具体应用进行试验。

R-T Curve

200

150

100

MIN

TYP

MAX

MIN

TYP

MAX

100

105

110

115

120

125

Temperature T_TH[∩ ]

100

125

Temperature T_TH[∩ ]

图 5. 内置热敏电阻的 R-T 曲线

FPAB30BH60B Rev. C4

www.fairchildsemi.com

推荐工作条件

符号

项目

条件

最小值典型值最大值单位

V_rms

V_i

V_PN

施加在 R - S 之间

施加在 P - N 之间

187

220

380

253

400

16.5

输入电源电压

13.5

-1

输出电压

V_CC

dV_CC/dt

f_PWM

I_i

施加于 V_CC(L)- COM 之间

15.0

控制电源电压

控制电源波动

PWM 输入频率

允许的输入电流

V/μs

kHz

A_peak

T_J≤ 150°C

T_C< 90°C, V_i= 220 V, V_PN= 380 V

V_PWM= 20 kHz

机械特性和额定值

项目

条件

最小值典型值最大值单位

安装螺钉：M3

见图 6

建议 0.62 N•m

0.51

0.62

0.72

+120

N•m

μm

安装扭矩

器件平面度

重量

15.00

(+)

图 6. 平面度测量位置

FPAB30BH60B Rev. C4

www.fairchildsemi.com

保护功能时序图

Input Signal

Internal IGBT

Gate-Emitter Voltage

reset

Control Supply Voltage

detect

Output Current

Fault Output Signal

P1 : 正常工作：IGBT 导通并传导电流。

P2 : 欠压检测。

P3 : IGBT 栅极中断。

P4 : 故障信号产生。

P5 : 欠压复位。

P6 : 正常工作：IGBT 导通并传导电流。

图 7. 欠压保护

P 5

In p u t S ig n a l

P 6

In te rn a l IG B T

G a te -E m itte r V o lta g e

O C D e te ctio n

P 1

P 4

P 7

O u tp u t C u rre n t

P 2

O C R e fe re n ce

V o lta g e (0 .5 V )

S e n sin g V o lta g e

R C F ilte r D e la y

P 8

F a u lt O u tp u t S ig n a l

P 3

P1 : 正常工作：IGBT 导通并传导电流。

P2 : 过流检测。

P3 : IGBT 栅极中断 / 故障信号产生。

P4 : IGBT 缓慢关断。

P5 : IGBT 关断信号。

P6 : IGBT 导通信号：但是在故障输出有效的时间内， IGBT 不导通。

P7 : IGBT 关断状态。

P8 : 故障输出复位并启动正常工作。

图 8. 过流保护

FPAB30BH60B Rev. C4

www.fairchildsemi.com

+5 V

VTH

RTH

NTC

Thermistor

+5 V

CSC

CFOD

VFO

CSC

CFOD

VFO

PFC

Controller

OUT

V_AC

COM

VCC

COM

VCC

+15 V

图 9. 应用实例

注：

5. 每个电容都应尽可能地靠近 PFC SPM 产品的引脚安装。

6. 建议将反向并联二极管与 IGBT 相连接。

FPAB30BH60B Rev. C4

www.fairchildsemi.com

封装轮廓详图

封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和

/ 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆

公司产品保修的部分。

随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：

http://www.fairchildsemi.com/dwg/MO/MOD27BE.pdf

FPAB30BH60B Rev. C4

www.fairchildsemi.com

FPAB30BH60B Rev. C4

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FPAB30BH60B [ONSEMI]

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