FPDB40PH60B [ONSEMI]
PFC 智能功率模块，600V，40A;
| 型号： | FPDB40PH60B |
| 厂家： | 
ONSEMI |
| 描述： | PFC 智能功率模块，600V，40A 电动机控制 功率因数校正 光电二极管 |
| 文件： | 总13页 (文件大小：2413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2014 年9 月
FPDB40PH60B
用于两相无桥功率因数校正的PFC SPM® 3 系列
特性
概述
• 通过UL 第E209204 号认证(UL1557)
The FPDB40PH60B 是一种先进的 PFC SPM® 3 模块，
为消费、医药和工业应用提供非常全面的高性能无桥功率
因数校正输入功率平台。这些模块综合优化了内置 IGBT
的栅极驱动以最小化电磁干扰和能量损耗。同时也提供多
重模组保护特性，集成欠压闭锁，过流保护，热量监测和
故障报告。这些模块内的高性能输出二极管和分流电阻，
为额外节省空间和方便安装起到了重要作用。
• 600 V - 40 A 两相无桥功率因数校正，包含栅极驱动和
保护的控制IC
• 采用Al2O3 DBC 基板，实现非常低的热阻
• 内置负温度系数热敏电阻可实现温度监测
• 内置分流电阻可实现电流感应
• 针对20 kHz 开关频率进行优化
• 绝缘等级：2500 Vrms / 分钟
应用
• 两相无桥功率因数校正转换器
相关资料
• AN-9041 - Bridgeless PFC SPM 3 Series Design
Guide
图1. 封装概览
封装标识与定购信息
器件
器件标识
封装
包装类型
数量
FPDB40PH60B
FPDB40PH60B
SPMGC-027
Rail
10
©2011 飞兆半导体公司
1
www.fairchildsemi.com
FPDB40PH60B Rev. C3
集成的驱动、保护和系统控制功能
•
•
•
•
对于IGBT：栅极驱动电路、过流保护(OCP)、控制电源欠压锁定(UVLO) 保护
故障信号：对应OC 和UV 故障
内置热敏电阻：温度监控
输入接口：高电平有效接口，可用于3.3 / 5 V 逻辑电平，施密特触发脉冲输入
引脚布局
(1) VCC(L)
(2) COM
(3) NC
(21) VAC-
(4) IN(R)
(5) IN(S)
(6) VFO
(7) CFOD
(8) CSC
(22) NSENSE
(23) NC
(9) NC
(24) N
(25) R
(26) S
(27) PR
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(15) NC
(16) NC
(17) NC
(18) NC
(19) RTH
Case Temperature (TC)
Detecting Point
DBC Substrate
(20) VTH
图2. 俯视图
©2011 飞兆半导体公司
2
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FPDB40PH60B Rev. C3
引脚描述
引脚号
引脚名
VCC
COM
IN(R)
IN(S)
VFO
CFOD
CSC
R(TH)
V(TH)
VAC-
NSENSE
N
引脚描述
1
IC 和IGBT 驱动的公共偏压
公共电源接地
2
4
低端R 相IGBT 的信号输入
低端S 相IGBT 的信号输入
故障输出
5
6
7
设置故障输出持续时间的电容
过电流感测电容（低通滤波器）
供热敏电阻使用的串联电阻器
热敏电阻偏压
8
19
20
21
电流感测端
22
电流感测参考端
24
直流负端
25
26
R
R 相输出
S
S 相输出
27
PR
直流正端
3, 9~18, 23
NC
无连接
内部等效电路
(20) VTH
NTC
Thermistor
(19) RTH
(27) PR
D1
D2
(8) CSC
(7) CFOD
(6) VFO
CSC
(26) S
(25) R
CFOD
VFO
Q1
D3
Q2
D4
OUT(S)
OUT(R)
(5) IN(S)
(4) IN(R)
IN(S)
IN(R)
(24) N
(23) NC
(22) NSENSE
(21) VAC-
Shunt
Resistor
(2) COM
(1) VCC
COM
VCC
图3. 内部框图
注：
1. 转换器由两个IGBT 组成，内置有四个二极管，以及一个具有栅极驱动和保护功能的IC。
©2011 飞兆半导体公司
3
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FPDB40PH60B Rev. C3
绝对最大额定值 （TJ = 25°C，除非另有说明。）
转换器部分
符号
项目
条件
额定值
264
单位
Vrms
V
Vi
电源电压
施加在R - S 之间
施加在R - S 之间
施加在P - N 之间
施加在P - N 之间
500
Vi （浪涌）
VPN
电源电压（浪涌）
输出电压
450
V
500
V
VPN （浪涌） 输出电压（浪涌）
VCES
±IC
600
V
集电极- 发射极之间电压
单个IGBT 的集电极电流
单个IGBT 的集电极电流（峰值）
集电极功耗
TC = 25°C
40
A
±ICP
PC
70
A
TC = 25°C，脉冲宽度小于1 ms
TC = 25°C 单个IGBT
113
W
V
VRRM
IFSM
PRSH
TJ
600
重复峰值反向电压
350
A
正向浪涌峰值电流
单一正弦半波
TC < 125°C
2
W
°C
分流电阻的额定功率
工作结温
-40 ~ 150
（注2）
注：
®
2. PFC SPM 产品中集成的功率芯片的最大结温额定值为150 °C(@T ≤100°C).
C
控制部分
符号
VCC
VIN
项目
条件
施加在VCC - COM 之间
施加在IN - COM 之间
额定值
20
单位
V
V
控制电源电压
输入信号电压
-0.3 ~ 17.0
VFO
IFO
-0.3 ~ VCC+0.3
5
V
mA
V
故障输出电源电压
故障输出电流
施加在VFO - COM 之间
V
FO 引脚处的灌电流
VSC
-0.3~VCC+0.3
电流感测输入电压
施加在CSC - COM 之间
整个系统
符号
TC
项目
条件
额定值
-20 ~ 100
-40 ~ 150
2500
单位
°C
模块壳体工作温度
存储温度
TSTG
VISO
°C
Vrms
绝缘电压
60 Hz，正弦波形，交流1 分钟，连接陶
瓷基板到引脚
热阻
符号
项目
条件
最小值 典型值 最大值 单位
R
IGBT
-
-
-
-
-
-
1.1
1.9
1.4
°C/W
°C/W
°C/W
结点- 壳体的热阻（参考PKG 中心）
(j-c)Q
θ
R
高端二极管
低端二极管
(j-c)HD
θ
R
(j-c)LD
θ
注：
3. 关于壳体温度(T ) 的测量点，请参见图2。
C
©2011 飞兆半导体公司
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FPDB40PH60B Rev. C3
电气特性 （TJ = 25°C，除非另有说明。）
转换器部分
符号
VCE(SAT)
VFH
项目
IGBT 饱和电压
高端二极管电压
低端二极管电压
开关时间
条件
VCC = 15 V，VIN = 5 V，IC = 40 A
IF = 40 A
最小值 典型值 最大值 单位
-
1.8
2.2
1.15
500
180
500
90
2.3
V
V
-
2.7
VFL
IF = 40 A
-
1.55
V
tON
VPN = 400 V, VCC = 15 V, IC = 40 A
VIN = 0 V 5 V，电感负载
-
-
ns
ns
ns
ns
ns
A
tC(ON)
tOFF
tC(OFF)
trr
-
-
（注4）
-
-
-
-
-
-
43
-
Irr
6
-
RSENSE
ICES
1.8
-
2.0
-
2.2
250
m
A
电流感测电阻
VCE = VCES
集电极- 发射极间漏电流
注：
4. t 和t
包括模块内部驱动IC 的传输延迟时间。t
和t
指在内部给定的栅极驱动条件下，IGBT 本身的开关时间。详细信息，请参见图4。
C(OFF)
ON
OFF
C(ON)
Irr
120% of IC
100% of IC
VCE
IC
90% of IC
10% of VCE
10% of IC
10% of VCE
10% of IC
IC
VCE
V
IN
V
IN
tON
trr
tC(OFF)
tC(ON)
tOFF
(a) Turn-on
(b) Turn-off
图4. 开关时间的定义
©2011 飞兆半导体公司
5
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FPDB40PH60B Rev. C3
控制部分
符号
IQCCL
VFOH
项目
条件
最小值 典型值 最大值 单位
VCC = 15 V, IN = 0 V VCC - COM
-
4.5
-
-
-
26
-
mA
V
V
CC 静态电源电流
故障输出电压
VSC = 0 V, VFO 电路：4.7 k 至5 V 上拉
VSC = 1 V, VFO 电路：4.7 k 至5 V 上拉
VCC = 15 V
VFOL
-
0.8
0.55
13.0
13.2
2.0
-
V
VSC(ref)
UVCCD
UVCCR
tFOD
0.45
10.7
11.2
1.4
3.0
-
0.50
11.9
12.4
1.8
-
V
过电流保护触发电平
电源电路欠压保护
V
检测电平
V
复位电平
ms
V
故障输出脉宽
导通阈值电压
关断阈值电压
热敏电阻的阻值
CFOD = 33 nF （注5）
施加在IN - COM 之间
VIN(ON)
VIN(OFF)
RTH
-
0.8
-
V
-
50
5.76
k
k
at TC = 25°C （见图5）
at TC = 80°C （见图5）
-
-
注：
5. 故障输出脉宽t
-6
取决于电容C
的值，可采用下面的近似公式进行计算：C
= 18.3 x 10 x t
[F]
FOD
FOD
FOD
FOD
R-T Graph
120
100
80
60
40
20
0
20 30 40 50 60 70 80 90 100 110 120 130
Temperature [C]
图5. 内置热敏电阻的R-T 曲线
推荐工作条件
符号
项目
条件
最小值 典型值 最大值 单位
VI
VPN
180
-
280
15
-
264
400
16.5
1
Vrms
V
输入电源电压
施加在R - S 之间
施加在P - N 之间
-
13.5
-1
输出电压
VCC
V
控制电源电压
控制电源波动
PWM 输入信号
施加在VCC - COM 之间
dVCC/dt
fPWM
V/s
kHz
施加在IN - COM 之间
-
20
-
TC 100°C, TJ 125°C, 单个IGBT
©2011 飞兆半导体公司
6
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FPDB40PH60B Rev. C3
机械特性和额定值
项目
条件
最小值 典型值 最大值 单位
0.51
0.62
-
0.72
+120
-
N•m
m
g
安装扭矩
器件平面度
重量
安装螺钉：M3
见图6
建议0.62 N•m
0
-
15.00
(+)
(+)
(+)
图6. 平面度测量位置
©2011 飞兆半导体公司
7
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FPDB40PH60B Rev. C3
保护功能时序图
Input Signal
Internal IGBT
Gate-Emitter Voltage
P3
P2
UV
reset
P5
Control Supply Voltage
UV
detect
P6
P1
Output Current
P4
Fault Output Signal
P1 : 正常工作：IGBT 导通并传导电流。
P2 : 欠压检测。
P3 : IGBT 栅极中断。
P4 : 故障信号产生。
P5 : 欠压复位。
P6 : 正常工作：IGBT 导通并传导电流。
图7. 欠压保护
P 5
Input S ignal
P 6
Internal IG B T
G ate-E m itter V oltage
O C D etection
P 1
P 4
P 7
O utput C urrent
P 2
O C R eference
V oltage (0.5V )
S ensing V oltage
R C Filter D elay
P 8
Fault O utput S ignal
P 3
P1 : 正常工作：IGBT 导通并传导电流。
P2 : 过流检测。
P3 : IGBT 栅极中断/ 故障信号产生。
P4 : IGBT 缓慢关断。
P5 : IGBT 关断信号。
P6 : IGBT 导通信号：但是在故障输出有效的时间内，IGBT 不导通。
P7 : IGBT 关断状态。
P8 : 故障输出复位并启动正常工作。
图8. 过流保护
©2011 飞兆半导体公司
8
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FPDB40PH60B Rev. C3
V
ac
+5 V
V
TH
NTC
Thermistor
R
P
R
TH
C
S
R
SC
CSC
C
FOD
MCU
or
CFOD
VFO
3-Phase
Inverter
V
FO
IN
OUT(S)
OUT(R)
(S)
IN(S)
IN(R)
IN
(R)
Controller
N
COM
VCC
NSENSE
Shunt
Resistor
COM
VCC
V
AC-
图9. 应用实例
注：
6. 关于过流保护，时间常数应在 3 ~ 4 s 的范围内进行选择。
©2011 飞兆半导体公司
9
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FPDB40PH60B Rev. C3
封装轮廓详图
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和
/ 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf
©2011 飞兆半导体公司
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FPDB40PH60B Rev. C3
©2011 飞兆半导体公司
11
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FPDB40PH60B Rev. C3
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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SI9137
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