FPF2003 [ONSEMI]

全功能负载开关;
FPF2003
型号: FPF2003
厂家: ONSEMI    ONSEMI
描述:

全功能负载开关

开关 光电二极管
文件: 总12页 (文件大小:308K)
中文:  中文翻译
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IntelliMAXt Advanced Load  
Management Products  
FPF2000 - FPF2007  
General Description  
The FPF2000 through FPF2007 is a family of load switches which  
provide full protection to systems and loads which may encounter large  
current conditions. These devices contain a 0.7 W currentlimited  
Pchannel MOSFET which can operate over an input voltage range of  
1.8 5.5 V. Switch control is by a logic input (ON) capable of  
interfacing directly with low voltage control signals. Each part contains  
thermal shutdown protection which shuts off the switch to prevent  
damage to the part when a continuous overcurrent condition causes  
excessive heating.  
www.onsemi.com  
SC88A (SC70 5 Lead), 1.25x2  
CASE 419AC01  
When the switch current reaches the current limit, the part operates  
in a constant current mode to prohibit excessive currents from causing  
damage. For the FPF2000 FPF2002 and FPF2004 FPF2006, if the  
constant current condition still persists after 10ms, these parts will shut  
off the switch and pull the fault signal pin (FLAGB) low. The  
FPF2000, FPF2001, FPF2004 and FPF2005, have an autorestart  
feature which will turn the switch on again after 80 ms if the ON pin is  
still active. The FPF2002 and FPF2006 do not have this autorestart  
feature so the switch will remain off until the ON pin is cycled. For the  
FPF2003 and FPF2007, a current limit condition will immediately pull  
the fault signal pin low and the part will remain in the constantcurrent  
mode until the switch current falls below the current limit. For the  
FPF2000 through FPF2003, the minimum current limit is 50 mA while  
that for the FPF2004 through FPF2007 is 100 mA.  
MARKING DIAGRAM  
&Y  
&O20x&C  
&O&V  
20x = Device Code (x = 0, 1, 2, 3, 4, 5, 6, 7)  
&Y = Binary Calendar Year Coding Scheme  
&O = Plant Code Identifier on Tiny Logic Package  
&C = Single Digit Die Run Code  
&V = EightWeek Binary Datacoding Scheme  
These parts are available in a spacesaving 5 pin SC70 package.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Features  
1.8 to 5.5 V Input Voltage Range  
Controlled TurnOn  
50 mA and 100 mA Current Limit Options  
Undervoltage Lockout  
Thermal Shutdown  
<1 mA Shutdown Current  
Auto Restart  
Fast Current Limit Response Time  
3 ms to Moderate Over Currents  
20 ns to Hard Shorts  
Applications  
PDAs  
Cell Phones  
GPS Devices  
MP3 Players  
Digital Cameras  
Peripheral Ports  
Hot Swap Supplies  
Fault Blanking+  
These Devices are PbFree and are RoHS Compliant  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2021 Rev. 8  
FPF2001/D  
FPF2000 FPF2007  
ORDERING INFORMATION  
Current Limit  
AutoRestart Time  
Blanking Time (ms)  
(ms)  
Part  
Current Limit (mA)  
ON Pin Activity  
Active HI  
Top Mark  
200  
FPF2000  
FPF2001  
FPF2002  
FPF2003  
FPF2004  
FPF2005  
FPF2006  
FPF2007  
50  
50  
10  
10  
10  
0
80  
80  
Active LO  
Active HI  
201  
50  
NA  
NA  
80  
202  
50  
Active HI  
203  
100  
100  
100  
100  
10  
10  
10  
0
Active HI  
204  
80  
Active LO  
Active HI  
205  
NA  
NA  
206  
Active HI  
207  
TYPICAL APPLICATION CIRCUIT  
TO LOAD  
V
V
OUT  
IN  
FPF2000 FPF2007  
ON FLAGB  
OFF ON  
+
GND  
Figure 1. Typical Application Circuit  
FUNCTIONAL BLOCK DIAGRAM  
V
IN  
UVLO  
ON  
CONTROL  
LOGIC  
CURRENT  
LIMIT  
V
OUT  
THERMAL  
SHUTDOWN  
FLAGB  
GND  
Figure 2. Functional Block Diagram  
www.onsemi.com  
2
FPF2000 FPF2007  
PIN CONFIGURATION  
V
5
4
V
IN  
1
OUT  
GND  
2
3
ON  
FLAGB  
SC705  
Figure 3. Pin Configuration  
PIN DESCRIPTION  
Pin  
1
Name  
Function  
V
OUT  
Switch Output: Output of the power switch  
Ground  
2
GND  
3
FLAGB  
Fault Output: Active LO, open drain output which indicates an over current, supply under voltage or over  
temperature state.  
4
5
ON  
On Control Input  
V
IN  
Supply Input: Input to the power switch and the supply voltage for the IC  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Min  
0.3  
Max  
6
Unit  
V
V
, V  
, ON, FLAGB to GND  
IN  
OUT  
Power Dissipation @ T = 25°C (Note 1)  
250  
125  
150  
400  
mW  
°C  
A
Operating Junction Temperature  
Storage Temperature  
40  
65  
°C  
Thermal Resistance, Junction to Ambient  
Electrostatic Discharge Protection  
°C/W  
V
HBM  
MM  
4000  
400  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Package power dissipation on 1 square inch pad, 2 oz. copper board.  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Min  
1.8  
Max  
5.5  
85  
Unit  
V
V
IN  
Ambient Operating Temperature, T  
40  
°C  
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
3
 
FPF2000 FPF2007  
ELECTRICAL CHARACTERISTICS (V = 1.8 to 5.5 V, T = 40 to +85°C unless otherwise noted. Typical values are at V = 3.3 V  
IN  
A
IN  
and T = 25°C.)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
BASIC OPERATION  
Operating Voltage  
Quiescent Current  
V
1.8  
60  
5.5  
V
IN  
I
Q
I
= 0 mA  
active  
V
V
= 1.8 to 3.3 V  
= 3.3 to 5.5 V  
mA  
OUT  
ON  
IN  
V
100  
1
IN  
Shutdown Current  
I
mA  
mA  
W
SHDN  
LatchOff Current (Note 2)  
OnResistance  
I
V
V
V
V
V
V
V
V
V
V
= V , after an overcurrent fault  
40  
0.7  
0.85  
LATCHOFF  
ON  
IN  
= 3.3 V, I  
= 20 mA, T = 25°C  
1
IN  
OUT  
OUT  
OUT  
A
R
ON  
= 3.3 V, I  
= 3.3 V, I  
= 1.8 V  
= 5.5 V  
= 1.8 V  
= 5.5 V  
= 20 mA, T = 85°C  
1.2  
1.2  
IN  
A
= 20 mA, T = 40°C to +85°C 0.27  
IN  
A
ON Input Logic High Voltage  
ON Input Logic Low Voltage  
V
IH  
0.8  
1.5  
V
V
IN  
IN  
V
0.5  
0.9  
1
IL  
IN  
IN  
ON Input Leakage  
Off Switch Leakage  
= V or GND  
mA  
mA  
ON  
IN  
I
= 0 V, V  
IN  
= 0 V  
1
SWOFF  
ON  
OUT  
@ V = 5.5 V, T = 85°C  
A
V
= 0 V, V  
IN  
= 0 V  
A
10  
100  
nA  
V
ON  
OUT  
@ V = 3.3 V, T = 25°C  
FLAGB Output Logic Low Voltage  
V
IN  
V
IN  
V
IN  
= 5 V, I  
= 10 mA  
0.1  
0.1  
0.2  
0.3  
1
SINK  
= 1.8 V, I  
= 10 mA  
SINK  
FLAGB Output High Leakage Current  
PROTECTIONS  
= 5 V, Switch on  
mA  
Current Limit  
I
V
V
= 3.3 V,  
OUT  
FPF2000, FPF2001,  
FPF2002, FPF2003  
50  
75  
100  
200  
mA  
LIM  
IN  
= 3.0 V  
FPF2004, FPF2005,  
FPF2006, FPF2007  
100  
150  
Thermal Shutdown  
Shutdown Threshold  
Return from Shutdown  
Hystersis  
140  
130  
10  
°C  
Under Voltage Shutdown  
Under Voltage Shutdown Hysteresis  
DYNAMIC  
UVLO  
V
IN  
Increasing  
1.5  
1.6  
50  
1.7  
V
mV  
Turn On Time  
t
R = 500 W, C = 0.1 mF  
5
50  
0.5  
10  
ms  
ms  
ms  
ms  
ms  
ON  
L
L
Turn Off Time  
t
R = 500 W, C = 0.1 mF  
L L  
OFF  
V
OUT  
V
OUT  
Rise Time  
Fall Time  
t
R
R = 500 W, C = 0.1 mF  
L
L
t
F
R = 500 W, C = 0.1 mF  
0.1  
10  
L
L
Over Current Blanking Time  
t
t
FPF2000, FPF2001, FPF2002, FPF2004,  
FPF2005, FPF2006  
20  
BLANK  
AutoRestart Time  
FPF2000, FPF2001, FPF2004, FPF2005  
40  
80  
3
160  
ms  
RSTRT  
Short Circuit Response Time  
V
= V = 3.3 V. Moderate OverCurrent  
ms  
IN  
ON  
Condition.  
V
IN  
= V = 3.3V. Hard Short.  
20  
ns  
ON  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Applicable only to FPF2002 and FPF2006. Latchoff current does not include current flowing into FLAGB.  
www.onsemi.com  
4
 
FPF2000 FPF2007  
TYPICAL CHARACTERISTICS  
90  
75  
70  
65  
60  
55  
50  
VON = VIN  
V
= V  
ON IN  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
V
IN  
= 5.5 V  
V
IN  
= 3.3 V  
V
= 1.8 V  
IN  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
40  
15  
10  
35  
60  
85  
85  
6
SUPPLY VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 4. Quiescent Current vs. Input Voltage  
Figure 5. Quiescent Current vs. Temperature  
35  
35  
I_SHDN  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
V
IN  
= 5 V  
V
= 5 V  
V
IN  
= 3.3 V  
60  
V
IN  
= 3.3 V  
IN  
0
40  
0
40  
15  
10  
35  
60  
85  
15  
10  
35  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 6. ISHUTDOWN Current vs. Temperature  
Figure 7. ISWITCHOFF Current vs. Temperature  
52  
48  
44  
40  
36  
32  
28  
1.5  
V
IN  
= 3.3 V  
FPF2000, 2002, 2003, 2004, 2006, 2007  
1.25  
1
0.75  
0.5  
FPF2001, 2005  
0.25  
0
1.5  
40  
15  
10  
35  
60  
85  
2
2.5  
3
3.5  
V , INPUT VOLTAGE (V)  
IN  
4
4.5  
5
5.5  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 8. ILATCHOFF vs. Temperature  
Figure 9. VIH vs. VIN  
www.onsemi.com  
5
FPF2000 FPF2007  
TYPICAL CHARACTERISTICS (continued)  
160  
140  
120  
100  
80  
180  
160  
FPF2004, 2005, 2006, 2007  
140  
120  
100  
80  
FPF2004, 2005, 2006, 2007  
FPF2000, 2001, 2002, 2003  
FPF2000, 2001, 2002, 2003  
60  
60  
40  
40  
20  
20  
0
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
3
3.3  
5.5  
85  
40  
15  
10  
35  
60  
85  
85  
85  
V
IN  
V  
(V)  
T , JUNCTION TEMPERATURE (°C)  
J
OUT  
Figure 10. Current Limit vs. Output Voltage  
Figure 11. Current Limit vs. Temperature  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
1.1  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
V
IN  
= 1.8 V  
V
IN  
= 3.6 V  
V
= 5 V  
35  
IN  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
40  
15  
10  
60  
V
IN  
, INPUT VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 12. RON vs. VIN  
Figure 13. RON vs. Temperature  
100  
10  
100  
10  
I
V
= 10 mA  
= 3.3 V  
LOAD  
CC  
T
ON  
T
Rise  
I
= 10 mA  
= 3.3 V  
LOAD  
V
CC  
1
1
T
Fall  
0.1  
T
OFF  
0.1  
40  
0.01  
15  
10  
35  
60  
40  
15  
10  
35  
60  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 14. TON/TOFF vs. Temperature  
Figure 15. TRISE/TFALL vs. Temperature  
www.onsemi.com  
6
FPF2000 FPF2007  
TYPICAL CHARACTERISTICS (continued)  
12  
11  
10  
9
100  
80  
60  
8
40  
40  
40  
15  
10  
35  
60  
85  
15  
10  
35  
60  
85  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 16. TBLANK vs. Output Voltage  
Figure 17. TRESTART vs. Temperature  
3
3
V
DRV  
V
DRV  
2 V/DIV  
2 V/DIV  
V
OUT  
V
OUT  
2 V/DIV  
2 V/DIV  
I
I
OUT  
OUT  
50 mA/DIV  
50 mA/DIV  
V
V
FLAGB  
FLAGB  
2 V/DIV  
2 V/DIV  
5 ms/DIV  
10 ms/DIV  
Figure 18. TBLANK Response  
Figure 19. TRESTART Response  
R = 500 W, C = 0.1 mF  
R = 500 W, C = 0.1 mF  
L L  
L
L
Active High Devices  
Active High Devices  
V
ON  
V
ON  
2 V/DIV  
2 V/DIV  
I
I
OUT  
OUT  
10 mA/DIV  
10 mA/DIV  
50 ms/DIV  
100 ns/DIV  
Figure 20. TON Response  
Figure 21. TOFF Response  
www.onsemi.com  
7
FPF2000 FPF2007  
TYPICAL CHARACTERISTICS (continued)  
V
IN  
2 V/DIV  
V /V  
IN ON  
2 V/DIV  
I
OUT  
2 A/DIV  
I
OUT  
200 mA/DIV  
C
= 10 mF  
IN  
V
OUT  
C
= 1 mF  
OUT  
2 V/DIV  
Active High Devices  
20 ms/DIV  
20 ms/DIV  
Figure 22. Short Circuit Response Time  
(Output Shorted to GND)  
Figure 23. Current Limit Response  
(Switch Power Up to Hard Short)  
V
IN  
2 V/DIV  
C
C
= 10 mF  
IN  
= 1 mF  
OUT  
V
ON  
Active High Devices  
2 V/DIV  
I
OUT  
100 mA/DIV  
V
OUT  
(SHORTED  
TO GND)  
20 ms/DIV  
Figure 24. Current Limit Response Time  
NOTE:  
3. VDRV signal forces the device to go into overcurrent condition.  
www.onsemi.com  
8
FPF2000 FPF2007  
DESCRIPTION OF OPERATION  
The FPF2000 FPF2007 are current limited switches that  
protect systems and loads which can be damaged or  
disrupted by the application of high currents. The core of  
each device is a 0.7 W Pchannel MOSFET and a controller  
capable of functioning over a wide input operating range of  
1.8 5.5 V. The controller protects against system  
malfunctions through current limiting, undervoltage  
lockout and thermal shutdown. The current limit is preset for  
either 50 mA or 100 mA.  
MOSFET which requires a pullup resistor between V and  
FLAGB. During shutdown, the pulldown on FLAGB is  
disabled to reduce current draw from the supply.  
IN  
Current Limiting  
The current limit ensures that the current through the  
switch doesn’t exceed a maximum value while not limiting  
at less than a minimum value. For the FPF2000 FPF2003  
the minimum current is 50 mA and the maximum current is  
100 mA and for the FPF2004 FPF2007 the minimum  
current is 100 mA and the maximum current is 200 mA. The  
FPF2000 FPF2002 and the FPF2004 FPF2006, have a  
blanking time of 10 ms, nominally, during which the switch  
will act as a constant current source. At the end of the  
blanking time, the switch will be turnedoff and the FLAGB  
pin will activate to indicate that current limiting has  
occurred. The FPF2003 and FPF2007 have no current limit  
blanking period so immediately upon a current limit  
condition FLAGB is activated. These parts will remain in a  
constant current state until the ON pin is deactivated or the  
thermal shutdown turnsoff the switch.  
On/Off Control  
The ON pin controls the state of the switch. Active HI and  
LO versions are available. Refer to the Ordering  
Information for details. Activating ON continuously holds  
the switch in the on state so long as there is no fault. For all  
versions, an undervoltage on VIN or a junction  
temperature in excess of 150°C overrides the ON control to  
turn off the switch. In addition, excessive currents will cause  
the switch to turn off in FPF2000 FPF2002 and FPF2004 −  
FPF2007. The FPF2000, FPF2001, FPF2004 and FPF2005  
have an AutoRestart feature which will automatically turn  
the switch on again after 80 ms. For the FPF2002 and  
FPF2006, the ON pin must be toggled to turnon the switch  
again. The FPF2003 and FPF2007 do not turn off in  
response to a over current condition but instead remain  
operating in a constant current mode so long as ON is active  
and the thermal shutdown or undervoltage lockout have not  
activated.  
Reverse Voltage  
If the voltage at the V  
pin is larger than the V pin,  
IN  
OUT  
large currents may flow and can cause permanent damage to  
the device. FPF2000 FPF2007 is designed to control  
current flow from V to V  
.
IN  
OUT  
UnderVoltage Lockout  
The undervoltage lockout turnsoff the switch if the  
input voltage drops below the undervoltage lockout  
threshold. With the ON pin active the input voltage rising  
above the undervoltage lockout threshold will cause a  
controlled turnon of the switch which limits current  
overshoots.  
Fault Reporting  
Upon the detection of an overcurrent, an input  
undervoltage, or an overtemperature condition, the  
FLAGB signals the fault mode by activating LO. For the  
FPF2000 FPF2002 and FPF2004 FPF2006, the FLAGB  
goes LO at the end of the blanking time while FLAGB goes  
LO immediately for the FPF2003 and FPF2007. FLAGB  
remains LO through the AutoRestart Time for the  
FPF2000, FPF2001 FPF2004 and FPF2005. For the  
FPF2002 and FPF2006, FLAGB is latched LO and ON must  
be toggled to release it. With the FPF2003 and FPF2007,  
FLAGB is LO during the faults and immediately returns HI  
at the end of the fault condition. FLAGB is an opendrain  
Thermal Shutdown  
The thermal shutdown protects the die from internally or  
externally generated excessive temperatures. During an  
overtemperature condition the FLAGB is activated and the  
switch is turnedoff. The switch automatically turnson  
again if temperature of the die drops below the threshold  
temperature.  
www.onsemi.com  
9
FPF2000 FPF2007  
APPLICATION INFORMATION  
Typical Application  
LOAD  
V
V
OUT  
IN  
R1 = 100 kW  
C2 = 0.1 mF  
FPF2000 FPF2007  
ON FLAGB  
R2 = 500 W  
OFF ON  
C1 = 4.7 mF  
1.8 V 5.5 V  
+
GND  
Figure 25. Typical Application  
Input Capacitor  
If the part goes into current limit the maximum power  
dissipation will occur when the output is shorted to ground.  
For the FPF2000, FPF2001, FPF2004 and FPF2005, the  
power dissipation will scale by the AutoRestart Time,  
To limit the voltage drop on the input supply caused by  
transient inrush currents when the switch turnson into a  
discharged load capacitor or a shortcircuit, a capacitor  
needs to be placed between V and GND. A 4.7 mF ceramic  
t , and the Over Current Blanking Time, t , so  
RESTART BLANK  
IN  
capacitor, C , must be placed close to the V pin. A higher  
that the maximum power dissipated is,  
IN  
IN  
value of C can be used to further reduce the voltage drop  
IN  
tBLANK  
P(max) +  
  (VIN(max))   ILIM(max)  
experienced as the switch is turned on into a large capacitive  
load.  
t
RESTART ) tBLANK  
10  
+
  5.5   0.2 + 1.22 mW  
Output Capacitor  
A 0.1 mF capacitor C  
(eq. 3)  
80 ) 10  
, should be placed between V  
OUT OUT  
When using the FPF2002 and FPF2006 attention must be  
given to the manual resetting of the part. Continuously  
resetting the part at a high duty cycle when a short on the  
output is present can cause the temperature of the part to  
increase. The junction temperature will only be allowed to  
increase to the thermal shutdown threshold. Once this  
temperature has been reached, toggling ON will not turnon  
the switch until the junction temperature drops. For the  
FPF2003 and FPF2007, a short on the output will cause the  
part to operate in a constant current state dissipating a worst  
case power as calculated in (eq. 3) until the thermal  
shutdown activates. It will then cycle in and out of thermal  
shutdown so long as the ON pin is active and the short is  
present.  
and GND. This capacitor will prevent parasitic board  
inductances from forcing V below GND when the  
switch turnsoff. For the FPF2000 FPF2002 and the  
FPF2004 FPF2006, the total output capacitance needs to  
OUT  
be kept below a maximum value, C (max), to prevent the  
OUT  
part from registering an overcurrent condition and  
turningoff the switch. The maximum output capacitance  
can be determined from the following formula,  
ILIM(max)   tBLANK(min)  
+
COUT  
(eq. 1)  
VIN  
Due to the integral body diode in the PMOS switch, a C  
IN  
greater than C  
is highly recommended. A C  
greater  
OUT  
OUT  
than C can cause V  
to exceed V when the system  
IN  
OUT  
IN  
supply is removed. This could result in current flow through  
Board Layout  
the body diode from V  
to V .  
OUT  
IN  
For best performance, all traces should be as short as  
possible. To be most effective, the input and output  
capacitors should be placed close to the device to minimize  
the effects that parasitic trace inductances may have on  
normal and shortcircuit operation. Using wide traces for  
Power Dissipation  
During normal operation as a switch, the power  
dissipation is small and has little effect on the operating  
temperature of the part. The parts with the higher current  
limits will dissipate the most power and that will only be,  
2
V , V  
IN OUT  
and GND will help minimize parasitic electrical  
effects along with minimizing the case to ambient thermal  
impedance.  
P + (ILIM  
)
  RDS + (0.2)2   0.7 + 28 mW  
(eq. 2)  
IntelliMAX is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
www.onsemi.com  
10  
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SC88A (SC70 5 Lead), 1.25x2  
CASE 419AC01  
ISSUE A  
DATE 29 JUN 2010  
SYMBOL  
MIN  
NOM  
MAX  
D
0.80  
A
1.10  
e
e
A1  
A2  
0.00  
0.80  
0.10  
1.00  
b
c
0.15  
0.10  
1.80  
1.80  
1.15  
0.30  
0.18  
2.20  
2.40  
1.35  
D
2.00  
2.10  
E1  
E
E
E1  
e
1.25  
0.65 BSC  
0.36  
L
0.26  
0.46  
L1  
L2  
0.42 REF  
0.15 BSC  
TOP VIEW  
0º  
4º  
8º  
θ
10º  
θ1  
q1  
A2  
A1  
A
q
L
b
L1  
q1  
c
L2  
SIDE VIEW  
END VIEW  
Notes:  
(1) All dimensions are in millimeters. Angles in degrees.  
(2) Complies with JEDEC MO-203.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON34260E  
SC88A (SC70 5 LEAD), 1.25X2  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
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