FPF2165R [ONSEMI]
全功能负载开关,带可调节电流限制;![FPF2165R](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FPF2165R_2238217_icpdf.jpg)
型号: | FPF2165R |
厂家: | ![]() |
描述: | 全功能负载开关,带可调节电流限制 开关 PC 光电二极管 |
文件: | 总11页 (文件大小:430K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Full Function Load Switch
with Adjustable Current
Limit
FPF2165R
Description
www.onsemi.com
The FPF2165R is a load switch which provides full protection to
systems and loads which may encounter large current conditions. The
device contains a 0.12 W current−limited P−channel MOSFET which
can operate over an input voltage range of 1.8−5.5 V. Internally,
current is prevented from flowing when the MOSFET is off and the
output voltage is higher than the input voltage. Switch control is by a
logic input (ON) capable of interfacing directly with low−voltage
control signals. The FPF2165R contains thermal shutdown protection,
which shuts off the switch to prevent damage to the part when a
continuous over−current condition causes excessive heating.
When the switch current reaches the current limit, the part operates
in a Constant−Current (CC) mode to prohibit excessive currents from
causing damage. The FPF2165R does not turn off after a current limit
fault; it remains in the constant current mode indefinitely. The
minimum current limit is 150 mA.
(Bottom)
(Top)
Pin 1
WDFN6 2x2, 065P
CASE 511CY
The FPF2165R is available in a space−saving 6−pin 2 mm x 2 mm
Molded Leadless Package (MLP).
Features
Applications
• PDAs
• Cell Phones
• GPS Devices
• MP3 Players
• Digital Cameras
• Peripheral Ports
• Hot Swap Supplies
• 1.8 to 5.5 V Input Voltage Range
• Controlled Turn−On
• 0.15 − 1.5 A Adjustable Current Limit
•
10% Current Limit Accuracy vs. Temperature
• Under−Voltage Lockout (UVLO)
• Thermal Shutdown
• < 2 mA Shutdown Current
• Fast Current Limit Response Time
♦ 5 ms to Moderate Over Currents
♦ 30 ns to Hard Shorts
Related Resources
• FPF2165R Product Information
• Reverse Current Blocking
• These Devices are Pb−Free and are RoHS Compliant
ORDERING INFORMATION
Current Limit
[mA]
Current Limit
Blanking Time [ms]
Auto Restart
Time [ms]
†
Part Number
On Pin Activity
Top Mark
Shipping
FPF2165R
150 − 1500
0
NA
Active HI
65R
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2020 − Rev. 1
FPF2165R/D
FPF2165R
Typical Application
+
−
Figure 1. Typical Application
Block Diagram
Figure 2. Block Diagram
Pin Configuration
ON
GND
6
5
4
1
2
3
ISET
7
V
V
IN
FLAGB
OUT
Figure 3. Pin Assignment (Top Through View)
www.onsemi.com
2
FPF2165R
PIN DESCRIPTIONS
Name
Type
Description
1
2
3
4
ISET
Current Limit Set Input: A resistor from ISET to ground sets the current limit for the switch
Supply Input: Input to the power switch and the supply voltage for the IC
Switch Output: Output of the power switch
V
IN
V
OUT
FLAGB
Fault Output: Active LO, open drain output which indicates an over−current supply
under−voltage or over−temperature state
5, 7
6
GND
ON
Ground
ON Control Input
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
6.0
1.2
150
86
Unit
V
V
IN
V
IN
, V , ON, FLAGB, ISET to GND
OUT
−0.3
P
D
Power Dissipation
W
T
Operating and Storage Junction Temperature
Thermal Resistance, Junction to Ambient
−65
°C
STG
q
°C/W
V
JA
ESD
Electrostatic Discharge
Capability
Human Body Model; JEDEC A1141
4000
2000
400
Charged Device Model; JEDEC C101C
Machine Model; JEDEC A115
IEC 61000−4−2
Air Discharge
15000
8000
Contact Discharge
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.8
Max
5.5
85
Unit
V
V
IN
Input Voltage
Ambient Operating Temperature
T
A
−40
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
3
FPF2165R
ELECTRICAL CHARACTERISTICS
V
IN
= 1.8 to 5.5 V, T = −40 to +85°C unless otherwise noted. Typical values are at V = 3.3 V and T = 25°C.
A
I
N
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Basic Operation
V
Operating Voltage
Quiescent Current
1.8
5.5
V
IN
Q
I
I
= 1 mA
mA
OUT
V
V
V
= 1.8 V
= 3.3 V
= 5.5 V
63
68
100
IN
IN
IN
77
120
160
180
180
124
143
143
R
On Resistance
mW
ON
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 3.3 V, I
= 3.3 V, I
= 3.3 V, I
= 5 V, I
= 200 mA, T = 25°C
120
135
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
ON
ON
OUT
OUT
OUT
A
= 200 mA, T = 85°C
A
= 200 mA, T = −40°C to +85°C
65
A
= 200 mA, T = 25°C
95
OUT
A
= 5 V, I
= 5 V, I
= 200 mA, T = 85°C
110
OUT
OUT
A
= 200 mA, T = −40°C to +85°C
58
0.8
1.4
A
V
IH
V
V
= 1.8 V
= 5.5 V
= 1.8 V
= 5.5 V
ON Input Logic High Voltage (ON)
V
IL
0.5
1
ON Input Logic Low Voltage
ON Input Leakage
= V or GND
−1
−2
1
mA
IN
V
IN
Shutdown Current
= 0 V, V = 5.5 V, V
= Short to GND
2
mA
IN
OUT
V
= 5 V, I
= 10 mA
0.05
0.12
0.20
0.30
IN
IN
SINK
FLAGB Output Logic Low Voltage
= 1.8 V, I
= 10 mA
SINK
FLAGB Output High Leakage
Current
V
IN
= 5 V, Switch On
1
mA
Reverse Block
V
OUT
Shutdown Current
V
ON
= 0 V, V
= 5.5 V, V = Short to GND
−2
2
mA
OUT
IN
Protections
ILIM
Current Limit
mA
V
V
V
= 3.3 V, V
= 3.3 V, V
= 3.3 V, V
= 3.0 V, R
= 3.0 V, R
= 3.0 V, R
= 1840 W
= 361 W
= 196 W
135
720
150
800
1500
140
130
10
165
880
IN
IN
IN
OUT
OUT
OUT
SET
SET
SET
1350
1650
Thermal Shutdown
°C
Shutdown Threshold
Return from Shutdown
Hysteresis
Under−Voltage Shutdown
V
IN
Increasing
1.55
1.65
1.75
V
UVLO
Under−Voltage Shutdown
Hysteresis
50
mV
Dynamic
td
Delay On Time
Delay Off Time
R = 500 W, CL = 0.1 mF
25
45
ms
ms
ms
ms
ON
L
td
OFF
R = 500 W, CL = 0.1 mF
L
t
V
Rise Time
Fall Time
R = 500 W, CL = 0.1 mF
L
10
RISE
FALL
OUT
OUT
t
V
R = 500 W, CL = 0.1 mF
L
110
Short−Circuit Response Time
V
IN
= V
= 3.3 V, Moderate Over−Current Condition
OUT
5
ms
V
IN
= V
= 3.3 V, Hard Short
30
ns
OUT
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Package power dissipation on 1 square inch pad, 2 oz copper board.
www.onsemi.com
4
FPF2165R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Quiescent Current vs. Input Voltage
Figure 5. Quiescent Current vs. Temperature
Figure 7. VON Low Voltage vs. Input Voltage
Figure 6. VON High Voltage vs. Input Voltage
Figure 8. RON vs. VIN
Figure 9. RON vs. Temperature
www.onsemi.com
5
FPF2165R
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 11. TRISE / TFALL vs. Temperature
Figure 10. tdON / tdOFF vs. Temperature
Figure 13. tdOFF Response
Figure 12. tdON Response
Figure 14. Current Limit Response Time
(Switch Powered into Short)
www.onsemi.com
6
FPF2165R
Description of Operation
For preventing the switch from large power dissipation
during heavy load a short circuit detection feature is
introduced. Short circuit condition is detected by observing
the output voltage. The switch is put into short circuit current
The FPF2165R is a current limited switch that protects
systems and loads which can be damaged or disrupted by the
application of high currents. The core of each device is a
0.12 W P−channel MOSFET and a controller capable of
functioning over a wide input operating range of 1.8−5.5 V.
The controller protects against system malfunctions through
current limiting, under−voltage lockout and thermal
shutdown. The current limit is adjustable from 0.15 A to
1.5 A through the selection of an external resistor.
limiting mode if the switch is loaded with a heavy load.
,
When the output voltage drops below V
short circuit
SCTH
detection threshold voltage, the current limit value
re−conditioned and short circuit current limit value is
decreased to 62.5% of the current limit value. This keeps the
power dissipation of the part below a certain limit even at
dead short conditions at 5.5 V input voltage. The VSCTH
value is set to be 1 V. At around 1.1 V of output voltage the
switch is removed from short circuit current limiting mode
and the current limit is set to the current limit value.
On/Off Control
The ON pin controls the state of the switch. When ON is
high, the switch is in the On state. Activating ON
continuously holds the switch in the On state so long as there
is no fault. An under−voltage on V or a junction
Under−Voltage Lockout
IN
temperature in excess of 140°C overrides the ON control to
turn off the switch. The FPF2165R does not turn off in
response to an over−current condition but instead remains
operating in a constant current mode so long as ON is active
and the thermal shutdown or under−voltage lockout have not
activated.
The under−voltage lockout turns−off the switch if the
input voltage drops below the under−voltage lockout
threshold. With the ON pin active the input voltage rising
above the under−voltage lockout threshold causes a
controlled turn−on of the switch which limits current
over−shoots.
The ON pin control voltage and V pin have independent
recommended operating ranges. The ON pin voltage can be
driven by a voltage level higher than the input voltage.
IN
Reverse Current Blocking
The FPF2165R family has a Reverse Current Blocking
feature that protects input source against current flow from
output to input. For a standard USB power design, this is an
important feature that protects the USB host from being
damaged due to reverse current flow on
reverse−current blocking feature is active when the load
switch is turned off.
If ON pin is LOW and output voltage becomes greater
than input voltage, no current can flow from the output to
the input. FLAGB operation is independent of the reverse
current blocking and does not report a fault condition if this
feature is activated.
Fault Reporting
Upon the detection of an over−current, an input under−
voltage, or an over−temperature condition, the FLAGB
signals the fault mode by activating LOW. With the
FPF2165R, FLAGB is LOW during the faults and
immediately returns HI at the end of the fault condition.
FLAGB is an open−drain MOSFET which requires a pull−
up resistor between VIN and FLAGB. During shutdown, the
pull−down on FLAGB is disabled to reduce current draw
from the supply.
V
.
The
BUS
Current Limiting
Thermal Shutdown
The current limit ensures that the current through the
switch doesn’t exceed a maximum value while not limiting
at less than a minimum value. The current at which the parts
will limit is adjustable through the selection of an external
resistor connected to ISET. Information for selecting the
resistor is found in the Application Info section. The
FPF2165R has no current limit blanking period so it remains
in a constant−current state until the ON pin is deactivated or
the thermal shutdown turns−off the switch.
The thermal shutdown protects the die from internally or
externally generated excessive temperatures. During an
over−temperature condition the FLAGB is activated and the
switch is turned−off. The switch automatically turns−on
again if temperature of the die drops below the threshold
temperature.
www.onsemi.com
7
FPF2165R
APPLICATIONS INFORMATION
Figure 15. Typical Application
Input Capacitor
Setting Current Limit
The FPF2165R has a current limit which is set with an
external resistor connected between ISET and GND. This
resistor is selected by using equation (1),
To limit the voltage drop on the input supply caused by
transient in−rush currents when the switch is turned on into
a discharged load capacitor or a short−circuit; a capacitor
needsto be placed between V and GND. A 4.7 mF ceramic
*1.0278
ILIM + 340.1 RSET
(eq. 1)
IN
capacitor, C , must be placed close to the V pin. A higher
IN
IN
value of C can be used to further reduce the voltage drop
IN
Table 1 can be used to select R . A typical application
SET
experienced as the switch is turned on into a large capacitive
load.
would be the 500 mA current that is required by a single USB
port. Using Table 1 an appropriate selection for the RSET
resistor would be 570 W.
Output Capacitor
A 0.1 mF capacitor C
and GND. This capacitor prevents parasitic board
inductances from forcing V
switch turns−off.
, should be placed between V
OUT
OUT
Table 1. CURRENT LIMIT VARIOUS RSET VALUES
Min. Current Typ. Current Max. Current
below GND when the
OUT
R
[W]
Limit [mA]
Limit [mA]
Limit [mA]
SET
1840
1391
937
708
632
570
478
411
361
322
290
265
243
225
209
196
135
150
165
Power Dissipation
180
200
220
During normal operation as a switch, the power dissipated
in the part depends upon the level at which the current limit
is set. The maximum allowed setting for the current limit is
0.77 A and this results in a power dissipation of,
P + (ILIM)2 RDS + (0.77)2 0.12 + 71.148 mW
270
300
330
360
400
440
405
450
495
450
500
550
540
600
660
(eq. 2)
630
700
770
If the part goes into current limit the maximum power
dissipation occurs when the output is shorted to ground. This
is more power than the package can dissipate, but the
thermal shutdown of the part activates to protect the part
from damage due to excessive heating. A short on the output
causes the part to operate in a constant−current state
dissipating a worst case power of,
720
800
880
810
900
990
900
1000
1100
1200
1300
1400
1500
1100
1210
1320
1430
1540
1650
990
1080
1170
1260
1350
P(max) + VIN(max) ILIM(max) + 5.5 0.77 + 4.235 W
(eq. 3)
This large amount of power activates the thermal
shutdown and the part cycles in and out of thermal shutdown
so long as the ON pin is active and the short is present.
www.onsemi.com
8
FPF2165R
Board Layout
The middle pad (pin 7) should be connected to the GND
plate of PCB for improving thermal performance of the load
switch. An improper layout could result higher junction
temperature and triggering the thermal shutdown protection
feature. This concern applies when the switch is set at higher
current limit value and an over−current condition occurs. In
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize
the effects that parasitic trace inductances may have on
normal and short−circuit operation. Using wide traces for
, V
= (V − V
)
V
and GND helps minimize parasitic electrical
this case power dissipation of the switch (P
IN OUT
D
IN
OUT
effects along with minimizing the case−to−ambient thermal
impedance.
x I (max)) could exceed the maximum absolute power
dissipation of 1.2 W.
LIM
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CY
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
1.72
1.68
2X
B
4
6
0.15
2.0
1.21
0.90
2.25
0.52(6X)
0.05
C
1
3
PIN#1 IDENT
TOP VIEW
2X
0.42(6X)
0.65
RECOMMENDED
LAND PATTERN
0.75 0.05
0.10
C
0.20 0.05
NOTES:
0.08
C
SIDE VIEW
C
0.025 0.025
A. PACKAGE DOES NOT FULLY CONFORM
TO JEDEC MO−229 REGISTRATION
SEATING
PLANE
B. DIMENSIONS ARE IN MILLIMETERS.
2.00 0.05
1.40 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.70)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
PIN #1 IDENT
(0.20)4X
1
3
0.32 0.05
(6X)
(0.40)
0.80 0.05
(0.60)
6
4
0.30 0.05
(6X)
C
0.65
0.10
0.05
A
B
1.30
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13613G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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