FQA24N50 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，500 V，24 A，200 mΩ，TO-3P;
| 型号： | FQA24N50 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，500 V，24 A，200 mΩ，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1645K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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June 2014
FQA24N50
N-Channel QFET MOSFET
®
500 V, 24 A, 200 mΩ
Features
Description
•
•
•
•
•
24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A
Low Gate Charge (Typ. 90 nC)
Low Crss (Typ. 55 pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.
100% Avalanche Tested
RoHS compliant
D
G
G
D
TO-3PN
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQA24N50
Unit
V
Drain-Source Voltage
500
24
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
15.2
96
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
1100
24
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
29
mJ
V/ns
W
dv/dt
PD
4.5
290
- Derate above 25°C
2.33
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
Max.
0.43
--
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
0.24
--
40
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA24N50
TO-3PN
Tube
N/A
N/A
30 units
FQA24N50
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
500
--
--
--
--
V
/
Breakdown Voltage Temperature Coeffi-
cient
ID = 250 μA, Referenced to 25°C
0.53
V/°C
IDSS
VDS = 500 V, VGS = 0 V
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
Zero Gate Voltage Drain Current
V
DS = 400 V, TC = 125°C
10
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
3.0
--
--
0.156
22
5.0
0.2
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 12 A
gFS
V
DS = 50 V, ID = 12 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
3500
520
55
4500
670
70
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
80
250
200
155
90
170
500
400
320
120
--
ns
ns
VDD = 250 V, ID = 24 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
V
DS = 400 V, ID = 24 A,
GS = 10 V
Qgs
Qgd
23
44
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
24
96
1.4
--
A
A
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 24 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 24 A,
400
4.3
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes :
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 3.4 mH, I = 24 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 24 A, di/dt ≤ 200 A/μs, V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
2
Typical Characteristics
V
Top :
15GVS
10 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
Bottom : 5.5 V
101
150℃
25℃
-55℃
100
※Notes :
1. VDS = 50V
2. 250μs Pulse Test
※Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
-1
10
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VGS = 10V
VGS = 20V
101
100
150℃
25℃
※Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0
20
40
60
80
100
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
7000
6000
5000
4000
3000
2000
1000
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
VDS = 100V
VDS = 250V
gd
C
VDS = 400V
iss
C
oss
6
4
※Notes :
1. VGS = 0 V
2. f =1MHz
C
rss
2
※ Note : ID = 24 A
0
0
20
40
60
80
100
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes:
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
※Notes :
1. V = 10 V
2. IDG=S 12 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
10 μs
100 μs
1 ms
10 ms
101
DC
100
※ Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-1
0
25
10
100
101
102
103
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
:
1 0 -1
0 .2
=
0 .4 3 ℃ /W M a x.
3 . T JM
-
T C
=
P D
* Z θ JC(t)
M
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
1 0 -2
t2
s in g le p u ls e
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
6
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
Gmax™
GTO™
®
TinyLogic
TINYOPTO™
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TinyPWM™
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Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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®
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Saving our world, 1mW/W/kW at a time™
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ESBC™
®
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SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
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®
STEALTH™
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SuperSOT™-3
SuperSOT™-6
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SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
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®
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UniFET™
VCX™
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XS™
®
®
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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®
®
仙童™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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No Identification Needed
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
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©2000 Fairchild Semiconductor Corporation
FQA24N50 Rev. C0
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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