FQB19N20TM [ONSEMI]

功率 MOSFET，N 沟道，QFET®，200 V，19.4 A，150 mΩ，D2PAK;


型号：	FQB19N20TM
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，QFET®，200 V，19.4 A，150 mΩ，D2PAK 开关脉冲晶体管
文件：	总10页 (文件大小：1004K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

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November 2013

FQB19N20

N-Channel QFET^®MOSFET

200 V, 19.4 A, 150 mΩ

Description

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

• 19.4 A, 200 V, R_DS(on)= 150 mΩ (Max.) @ V_GS= 10 V,

I_D= 9.7 A

•

Low Gate Charge (Typ. 31 nC)

Low Crss (Typ. 30 pF)

100% Avalanche Tested

RoHS Compliant

D²-PAK

Absolute Maximum Ratings

T = 25°C unless otherwise noted.

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Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

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Thermal Characteristics

Symbol

Parameter

Unit

FQB19N20TM

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

0.89

62.5

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

Thermal Resistance, Junction to Ambient (*1 in²Pad of 2-oz Copper), Max.

^oC/W

www.fairchildsemi.com

FQB19N20 Rev. C1

Package Marking and Ordering Information

Part Number

Top Mark

Package

D²-PAK

Packing Method Reel Size Tape Width

Tape and Reel

330 mm

24 mm

Quantity

FQB19N20

800 units

FQB19N20TM

Electrical Characteristics

T = 25°C unless otherwise noted.

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Notes:

1. Repetitive rating : pulse-width limited by maximum junction temperature.

2. L = 1.0 mH, I = 19.4 A, V = 50 V, R = 25 Ω, starting T = 25°C.

3. I ≤ 19.4 A, di/dt ≤ 300 A/µs , V ≤ BV

starting T = 25°C.

DSS, J

Essentially independent of operating temperature.

www.fairchildsemi.com

FQB19N20 Rev. C1

Typical Characteristics

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ꢀꢁꢂꢃꢄꢅꢆ%ꢈꢆ#ꢄꢊꢎꢐ&ꢅꢄꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ

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ꢗ ꢘꢙꢘꢀꢓꢚꢑꢐꢘꢂꢛꢓꢓꢜꢐꢌꢘꢘꢝꢅꢞ

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ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ

ꢊꢎꢛꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ

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ꢀꢁꢂꢃꢄꢀꢅꢀꢆ ꢀꢇꢀꢈꢉꢊꢋꢀꢌ

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ꢁꢂꢖꢌꢆꢓꢏꢗꢘꢄꢙꢌꢒꢉꢂꢕꢄꢇꢅꢆꢍꢉꢂꢎꢕꢐ

ꢀ ꢁꢂꢃꢄꢅꢆꢇꢂꢈꢆꢅꢉꢂꢊꢋꢆꢌꢍꢉꢂꢎꢏꢊꢐ

ꢀ

ꢁꢂ

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ

ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ

www.fairchildsemi.com

FQB19N20 Rev. C1

(Continued)

Typical Characteristics

ꢂ

ꢀ

ꢄꢋꢀ

ꢃꢋꢁ

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ꢀꢀꢀꢌꢈꢀꢍ ꢀꢊꢀꢌꢎꢋꢀꢁꢏ

ꢁꢁꢁꢏꢐꢁꢑ ꢁꢂꢁꢏꢒꢁꢑ

ꢂ

ꢆꢇ

ꢁꢁꢁꢓꢐꢁ1 ꢁꢂꢁ2ꢐ!ꢁ)

ꢈ

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ꢃ ꢁꢂ#ꢙꢏꢒꢅꢓꢄꢏꢂꢃꢉ"ꢑꢉꢌꢆꢅꢙꢌꢉꢂꢎ^ꢆꢊꢐ

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ꢅ

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ꢀꢁꢂꢃꢄꢅꢆ-ꢈꢆꢞꢄꢅꢊ.ꢛꢘ!ꢎꢆꢗꢘꢜꢍꢊꢂꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ

ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ

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ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ

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ꢐ

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ꢙꢐꢈꢆꢉꢊꢐꢅꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ

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ꢂ ꢀ ^ꢂ

ꢕ ꢂ ꢄ ꢈꢋ

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ꢀꢀꢀꢈ ꢊꢀꢖ _{ꢊ ꢉ}ꢗꢃꢘ ꢀꢇ ꢀꢏ ꢊꢙ ꢉ ꢀ ꢚꢛ ꢀꢜ ꢝ ꢞ ꢊ

ꢀ

ꢂ ꢀ ^ꢀꢁ

ꢀꢀꢀꢐ ꢊꢀ ꢓ ꢃ! ꢀ" ꢝ # ꢃꢂ $%ꢀ ꢇ ꢃ_ꢋꢚꢃ_ꢌ

ꢄ ꢈꢃ

ꢀꢀꢀ& ꢊꢀꢕ _{ꢊ ꢍ}ꢀ'ꢀꢕ _ꢉꢀꢇ ꢀꢒ _ꢈꢀ( ꢀꢖ _{ꢊ ꢉ}ꢗꢃꢘ

ꢀ

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ꢄ ꢈꢄ ꢋ

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ꢍ ꢎꢏ ꢐ ꢑꢒ ꢁꢓ ꢔ ꢑꢍ ꢒ

ꢃ_ꢆ

ꢂ ꢀ ^ꢀꢆ

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ꢁꢂꢘ ꢜ ꢙ ꢆ ꢌꢉ ꢂꢝ ꢆ ꢞ ꢉ ꢂ ꢙ ꢇ! ꢉ ꢂꢖ ꢙ ꢌꢆ ꢅꢓꢄ ꢏ ꢂꢎ! ꢉ ꢒ ꢐ

ꢃ

ꢀꢁꢂꢃꢄꢅꢆ''ꢈꢆ#ꢄꢊꢎꢐꢁꢅꢎꢍꢆ#ꢏꢅꢄ$ꢊꢜꢆꢖꢅꢐꢋꢘꢎꢐꢅꢆꢉꢃꢄꢙꢅ

www.fairchildsemi.com

FQB19N20 Rev. C1

V_GS

10V

Same Type

as DUT

50KΩ

Q_g

12V

200nF

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

= const.

3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Figure 13. Resistive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DS(t)

V_DD

DUT

1_G0V_S

t _p

Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQB19N20 Rev. C1

www.fairchildsemi.com

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.fairchildsemi.com

FQB19N20 Rev. C1

Mechanical Dimensions

Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

www.fairchildsemi.com

FQB19N20 Rev. C1

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AccuPower™

AX-CAP *

BitSiC™

Build it Now™

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CorePOWER™

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CTL™

F-PFS™

FRFET

Sync-Lock™

®*

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost

TinyBuck

Green FPS™ e-Series™

Gmax™

GTO™

TinyCalc™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

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Current Transfer Logic™

IntelliMAX™

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

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SuperSOT™-8

Fairchild Semiconductor

FACT Quiet Series™

UHC

Ultra FRFET™

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OPTOPLANAR

FACT

FAST

FastvCore™

FETBench™

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SupreMOS

SyncFET™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

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First Production

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Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I66

www.fairchildsemi.com

FQB19N20 Rev. C1

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FQB19N20TM [ONSEMI]

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