FQB34N20TM-AM002 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，200 V，31 A，75 mΩ，D2PAK;
| 型号： | FQB34N20TM-AM002 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，200 V，31 A，75 mΩ，D2PAK |
| 文件： | 总9页 (文件大小：959K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FQB34N20
N-Channel QFET® MOSFET
200 V, 31 A, 75 mΩ
Features
•
31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V,
ID = 15.5 A
Description
This N-Channel enhancement mode power MOSFET
is produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS Compliantꢀ
D
D
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Thermal Characteristics
Symbol
Parameter
FQB34N20TM_AM002 Unit
0.7
RJC
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
62.5
40
oC/W
RJA
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQB34N20/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB34N20TM-AM002
D2-PAK
330mm
24mm
800
FQB34N20
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Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.0mH, I = 31A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ꢀ 34A, di/dt ꢀ 300A/µs, V ꢀ BV
Starting T = 25°C
Essentially independent of operating temperature
SD
DD
DSS, J
4.
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2
Typical Characteristics
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Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 16. 2LD,TO263, Surface Mount
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Dimension in Millimeters
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相关型号：
FQB34N20TM_AM002
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