FQB34P10TM [ONSEMI]
P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ;
| 型号： | FQB34P10TM |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1979K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2016
FQB34P10
P-Channel QFET® MOSFET
100 V, -33.5 A, 60 mΩ
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
• -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V,
ID = -16.75 A
•
•
•
•
Low Gate Charge (Typ. 85 nC)
Low Crss (Typ. 170 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQB34P10TM
-100
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
-33.5
A
-23.5
A
IDM
(Note 1)
Drain Current
-134
A
VGSS
EAS
IAR
Gate-Source Voltage
± 25
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
2200
mJ
A
-33.5
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
15.5
mJ
V/ns
W
-6.0
3.75
Power Dissipation (TC = 25°C)
155
W
- Derate above 25°C
1.03
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
-55 to +175
300
°C
Thermal Characteristics
Symbol
Parameter
Unit
FQB34P10TM
RJC
RJA
Thermal Resistance, Junction to Case, Max.
0.97
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
oC/W
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
FQB34P10
D2-PAK
FQB34P10TM
Tape and Reel
330 mm
800 units
24 mm
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
VGS = 0 V, ID = -250 µA
Drain-Source Breakdown Voltage
-100
--
--
--
--
V
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
-0.1
V/°C
IDSS
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
Zero Gate Voltage Drain Current
-10
IGSSF
IGSSR
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
VGS = 25 V, VDS = 0 V
On Characteristics
VGS(th)
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -16.75 A
VDS = -40 V, ID = -16.75 A
Gate Threshold Voltage
-2.0
--
--
0.049
23
-4.0
0.06
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
2240
730
2910
950
pF
pF
pF
V
DS = -25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
170
220
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
25
250
160
210
85
60
510
330
430
110
--
ns
ns
V
DD = -50 V, ID = -33.5 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = -80 V, ID = -33.5 A,
GS = -10 V
Qgs
Qgd
15
V
45
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-33.5
-134
-4.0
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -33.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = -33.5 A,
160
0.88
ns
µC
dIF / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = mH, I = -33.5A, V = -25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ -33.5 A, di/dt ≤ 300 A/µs , V ≤ BV
starting T = 25°C.
DSS, J
SD
DD
Essentially independent of operating temperature.
4.
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
2
Typical Characteristics
Typical Characteristics
102
101
100
175℃
25℃
-55℃
※ Notes :
1. VDS = -40V
2. 250μs Pulse Test
-1
10
2
4
8
10
6
-VGS , Gate-Source Voltage [V]
-VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
25℃
175℃
※Notes :
1. VGS = 0V
2. 250μs Pulse Test
-1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
-ID , DrainCurrent [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = -20V
VDS = -50V
C
oss
VDS = -80V
C
iss
※Notes :
1. VGS = 0 V
2. f = 1MHz
6
C
rss
4
2
※Note: ID = -33.5 A
0
10
0
-1
1
10
100
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
Q , Total Gate Charge [nC]
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
3
(Continued)
Typical Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※Notes :
1. VGS = 0 V
2. ID = -250 μA
※Notes:
1. VGS = -10 V
2. ID = -16.75 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
40
35
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
101
100
100 μs
1 ms
10 ms
DC
※Notes :
1. TC = 25 o
C
2. T = 175 o
C
J
3. Single Pulse
-1
10
0
25
100
101
102
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D=0.5
0.2
※
Notes
:
10-1
0.1
1. Z
(t) = 0.97 ℃ /W Max.
2. DθuJtCy Factor, D=t1/t2
3. TJM - TC
=
PDM
*
Zθ JC(t)
0.05
PDM
0.02
0.01
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
VGS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
VGS
DUT
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
FM , Body Diode Forward Current
VSD
I
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
6
Mechanical Dimensions
7
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
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intended to be an exhaustive list of all such trademarks.
®
AccuPower™
F-PFS™
FRFET
OPTOPLANAR
®*
®
AttitudeEngine™
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
tm
Awinda
®
TinyBoost
TinyBuck
®
AX-CAP *
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®
®
BitSiC™
PowerTrench
TinyCalc™
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CTL™
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Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
PowerXS™
®
TinyLogic
Programmable Active Droop™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
QFET
QS™
Quiet Series™
Current Transfer Logic™
Marking Small Speakers Sound Louder RapidConfigure™
TranSiC™
®
DEUXPEED
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
™
TriFault Detect™
TRUECURRENT *
Dual Cool™
®
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
μSerDes™
EfficentMax™
ESBC™
MicroPak™
SmartMax™
MicroPak2™
MillerDrive™
MotionMax™
SMART START™
®
®
Solutions for Your Success™
UHC
®
®
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Ultra FRFET™
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VisualMax™
VoltagePlus™
XS™
Fairchild
®
®
MotionGrid
STEALTH™
Fairchild Semiconductor
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SuperFET
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MTx
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FACT
®
MVN
FastvCore™
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FPS™
®
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OPTOLOGIC
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Xsens™
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仙童
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I77
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQB34P10 Rev. 1.4
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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