FQB7P20TM [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-200 V，-7.3 A，690 mΩ，D2PAK;
| 型号： | FQB7P20TM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-200 V，-7.3 A，690 mΩ，D2PAK PC 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：1332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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www.onsemi.com
FQB7P20
P-Channel QFET® MOSFET
-200 V, -7.3 A, 690 mΩ
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• -7.3 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V,
ID = -3.65 A
•
•
•
•
Low Gate Charge (Typ. 19 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
RoHS Compliant
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
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Thermal Characteristics
Symbol
Parameter
Unit
oC/W
FQB7P20TM
RJC
RJA
Thermal Resistance, Junction to Case, Max.
1.39
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
* When mounted on the minimum pad size recommended (PCB Mount)
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.4
Publication Order Number:
FQB7P20/D
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
FQB7P20
D2-PAK
Tape and Reel
330 mm
800 units
24 mm
FQB7P20TM
Electrical Characteristics
T = 25°C unless otherwise noted.
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Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 16 mH, I = -7.3 A, V = -50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ -7.3 A, di/dt ≤ 300 A/µs , V ≤ BV
starting T = 25°C.
DSS, J
SD
DD
Essentially independent of operating temperature.
4.
www.onsemi.com
2
Typical Characteristics
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ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
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www.onsemi.com
3
(Continued)
Typical Characteristics
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ꢏꢐꢇꢆ#ꢅ$ꢊꢅꢄꢈꢋꢃꢄꢅ
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www.onsemi.com
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
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2.79
1.78
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(5.38)
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SCALE: 2X
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