FQD2N100TM [ONSEMI]
功率 MOSFET，N 沟道，QFET®，1000 V，1.6 A，9 Ω，DPAK;
| 型号： | FQD2N100TM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，1000 V，1.6 A，9 Ω，DPAK 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
QFET)
V
R
MAX
I MAX
D
DSS
DS(ON)
1000 V
9
ꢀ
@
1
0
V
1.6 A
1000 V, 1.6 A, 9 W
D
FQU2N100, FQD2N100
This N−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored to reduce
on−state resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
G
S
Features
• 1.6 A, 1000 V, R
= 9 ꢀ (Max.) @ V = 10 V, I = 0.8 A
GS D
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5 pF)
DS(on)
• 100% Avalanche Tested
• These Devices are Pb−Free, Halid Free and are RoHS Compliant
DPAK3 (IPAK)
CASE 369AR
DPAK3 (TO−252 3 LD)
CASE 369AS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
MARKING DIAGRAMS
Rating
Drain−Source Voltage
Drain Current − Continuous (T = 25°C)
Symbol
Value
Unit
V
V
DSS
1000
$Y&Z&3&K
$Y&Z&3&K
FQD
I
D
1.6
1.0
A
C
FQU
− Continuous (T = 100°C)
C
2N100
2N100
Drain Current − Pulsed (Note 1)
I
6.4
30
A
V
DM
Gate−Source Voltage
V
GSS
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
E
160
1.6
5.0
5.5
2.5
mJ
A
AS
AR
I
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
E
AR
mJ
V/ns
W
dv/dt
Power Dissipation (T = 25°C) *
P
FQU2N100,
FQD2N100 = Device Code
A
D
Power Dissipation (T = 25°C)
50
W
C
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Location
= 3−Digit Date Code
= 2−Digits Lot Run Traceability Code
− Derate above 25°C
0.4
W/°C
Operating and Storage Temperature
Range
T , T
−55 to
+150
°C
J
STG
Maximum Lead Temperature for
Soldering Purposes, 1/8”
(from case for 5 seconds)
T
L
300
°C
ORDERING INFORMATION
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FQU2N100TU
DPAK3 (IPAK) 70 Units / Tube
(Pb−Free)
FQD2N100TM
DPAK3
2500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2022 − Rev. 4
FQU2N100/D
FQU2N100, FQD2N100
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
2.5
Unit
°C/W
°C/W
R
R
Thermal Resistance, Junction−to−Case, Max.
ꢁ
JC
JA
Thermal Resistance, Junction−to−Ambient (minimum pad of 2 oz copper) , Max.
Thermal Resistance, Junction−to−Ambient (* 1 in2 pad of 2 oz copper), Max.
110
50
ꢁ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
I
= 250 ꢂ A, V = 0 V
1000
−
−
−
V
DSS
D
GS
ꢃ BV
ꢃ T
/
Breakdown Voltage Temperature
Coefficient
= 250 ꢂ A, Referenced to 25°C
−
0.976
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 1000 V, V = 0 V
−
−
−
−
−
−
−
−
10
100
100
−100
ꢂ
A
DSS
GS
= 800 V, T = 125°C
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 30 V, V = 0 V
nA
nA
GSSF
DS
I
= −30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 ꢂ A
3.0
−
−
5.0
9
V
ꢀ
S
GS(th)
DS(on)
GS
D
R
Static Drain−Source On Resistance
Forward Transconductance
= 10 V, I = 0.8 A
7.1
1.9
D
g
FS
= 50 V, I = 0.8 A
−
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
400
40
5
520
52
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
6.5
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 500 V, I = 2.0 A,
−
−
−
−
−
−
−
13
30
25
35
12
2.5
6.5
35
70
60
80
15.5
−
ns
d(on)
DD
G
D
R
= 25 ꢀ (Note 4)
t
r
t
d(off)
t
f
Q
V
DS
V
GS
= 800 V, I = 2.0 A,
nC
g
D
= 10 V (Note 4)
Q
gs
Q
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
1.5
6.0
1.4
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 1.6 A
−
V
GS
S
t
rr
= 0 V, I = 2.0 A,
520
2.3
ns
ꢂ C
GS
S
dI /dt = 100 A/ꢂ s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 120 mH, I = 1.6 A, V = 50 V, R = 25 ꢀ, Starting T = 25°C.
AS
DD
G
DSS
J
3. I ≤ 2.0 A, di/dt ≤ 300A/ꢂ s, V ≤ BV
, Starting T = 25°C.
SD
DD
J
4. Essentially independent of operating temperature.
www.onsemi.com
2
FQU2N100, FQD2N100
TYPICAL CHARACTERISTICS
V
GS
Top:
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
0
10
150°C
0
10
Bottom: 5.5 V
−55°C
−1
25°C
10
*NNootetess::
*Notes:
1. 250 ꢂ s Pulse Test
1. V = 50 V
DS
2. T = 25°C
2. 250 ꢂ s Pulse Test
C
−2
−1
10
10
−1
0
1
2
10
10
10
4
6
8
10
V
GS
, Gate−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
15
10
5
V
GS
= 10 V
0
10
V
GS
= 20 V
150°C
25°C
*Notes:
1. V = 0 V
2. 250 ꢂ s Pulse Test
GS
*Note: T = 25°C
J
−1
10
0
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
1
2
I , Drain Current (A)
3
4
V
, Source−Drain Voltage (A)
SD
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
12
700
C
C
C
= C + C (C = shorted)
iss
gs
gd
ds
= C + C
oss
rss
ds
gd
V
= 200 V
= 500 V
= 1000 V
DS
600
500
= C
10
8
gd
V
DS
V
DS
C
iss
400
300
200
100
0
6
C
oss
4
*Notes:
1. V = 0 V
GS
2. f = 1 MHz
2
0
C
rss
*Note: I = 1.6 A
D
0
−1
1
4
0
2
6
8
10
12
14
10
10
10
Q , Total Gate Charge (nC)
G
V
DS
, Drain−Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
FQU2N100, FQD2N100
TYPICAL CHARACTERISTICS (continued)
3.0
2.5
0
10
2.0
1.5
1.0
−1
10
*Notes:
0.5
*Notes:
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 250 ꢂ s
2. I = 0.8 A
D
D
−2
10
0.0
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1.8
1.5
1.2
Operation This Area
is Limited by R
1
0
DS(on)
10
10 ꢂ s
100 ꢂ s
1 ms
10
10 ms
0.9
0.6
0.3
0.0
DC
−1
10
*Note:
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
−2
10
0
1
2
3
50
10
25
75
100
125
150
10
10
10
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
D = 0.5
0
10
*Notes:
0.2
1. Z (t) = 2.5°C/W Max.
ꢁ
JC
2. Duty Factor, D = t /t
1
2
0.1
0.05
3. T − T = P
× Z (t)
ꢁ
JC
JM
C
DM
0.02
0.01
−1
10
P
DM
Single Pulse
t
1
t
2
−2
10
−3
−5
−4
−2
−1
0
1
10
10
10
10
10
10
10
t , Square Wave Pulse Duration (s)
1
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
FQU2N100, FQD2N100
Same Type
as DUT
V
GS
50 kꢀ
Q
g
12 V
300 nF
200 nF
V
DS
V
GS
Q
Q
gd
gs
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
t
d(on)
d(off)
t
r
t
f
t
off
t
on
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
L
1
2
EAS
+
ꢀ LIAS2ꢀꢀ
V
DS
BVDSS * VDD
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
DS
(t)
V
GS
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
FQU2N100, FQD2N100
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D =
V
GS
(Driver)
Gate Pulse Period
10 V
I
, Body Diode Forward Current
FM
I
SD
(DUT)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
(DUT)
V
DD
V
SD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is a registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (IPAK)
CASE 369AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13815G
DPAK3 (IPAK)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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For additional information, please contact your local Sales Representative at
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