FQD4N25TM-WS [ONSEMI]
功率 MOSFET，N 沟道，QFET®，250 V，3 A，1.75 Ω，DPAK;
| 型号： | FQD4N25TM-WS |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，250 V，3 A，1.75 Ω，DPAK |
| 文件： | 总9页 (文件大小：978K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FQD4N25
N-Channel QFET® MOSFET
250 V, 3 A, 1.75 Ω
Features
• 3 A, 250 V, RDS(on) = 1.75 Ω (Max.) @ VGS = 10 V,
ID = 1.5 A
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
•
•
Low Gate Charge (Typ. 4.3 nC)
Low Crss (Typ. 4.8 pF)
100% Avalanche Tested
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
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1/8" from Case for 5 Seconds.
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Thermal Characteristics
Symbol
Parameter
Unit
oC/W
FQD4N25TM_WS
RJC
RJA
Thermal Resistance, Junction to Case, Max.
3.4
110
50
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
Publication Order Number:
©2005 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FQD4N25/D
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
Tape and Reel
330 mm
16 mm
FQD4N25S
DPAK
2500 units
FQD4N25TM-WS
Electrical Characteristics
T = 25°C unless otherwise noted.
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Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 9.3 mH, I = 3.0 A, V = 50 V, R = 25 Ω, starting = 25°C.
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3. I ≤ 3.6 A, di/dt ≤ 300 A/µs , V ≤ BV
starting T = 25°C.
SD
DD
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4. Essentially independent of operating temperature.
www.onsemi.com
2
Typical Characteristics
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ꢀꢀꢀꢌꢈꢀꢌꢍꢋ ꢅꢀꢎꢏꢐꢅꢄꢀꢑꢄꢅꢃ
ꢀꢀꢀꢌꢈꢀꢑꢂꢀꢊꢀꢌꢍ
ꢀꢁ
ꢄꢀ
ꢀꢁ
ꢂ
ꢁ
ꢂ
ꢃ
ꢆ
ꢇ
ꢄꢀ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢗ ꢘꢙꢘꢄꢞꢌꢜꢝꢁꢏꢚꢓꢛꢜꢘꢗꢏ ꢌꢞꢖꢜꢘꢘ!ꢗ"
ꢂꢀ
ꢀ
ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢋꢄꢌꢍꢂꢀꢊꢎꢏꢅꢐꢍꢂꢑꢀꢒ
ꢁꢀ
ꢀꢁꢂꢃꢄꢅꢆ'ꢈꢆꢔꢎꢕꢖꢅꢂꢁꢘꢎꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆ%ꢈꢆ#ꢄꢊꢎꢐ&ꢅꢄꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀ
ꢀ
ꢆ
ꢅ
ꢂ
ꢄ
ꢁ
ꢁ
ꢄꢀ
ꢄꢀꢂ
ꢄꢀꢀꢁ
ꢀ
ꢁꢂꢁꢃꢆꢀ
ꢉꢄ
ꢀ
ꢁꢂꢁꢄꢆꢀ
ꢉꢄ
ꢀ
ꢂꢅ
ꢀ
ꢄꢅꢀ
ꢀ
ꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢉ
ꢀꢁ
ꢁ
ꢀꢀꢀꢌꢈꢀꢌꢍꢋ ꢅꢀꢎꢏꢐꢅꢄꢀꢑꢄꢅꢃ
ꢀ
ꢂ
ꢀꢁꢂꢃꢄꢀꢆꢀꢑ ꢀꢊꢀꢌꢍ
ꢉ
ꢁ
ꢄ
ꢂ
ꢅ
ꢆ
ꢀꢁꢂ
ꢀꢁꢃ
ꢀꢁꢆ
ꢀꢁꢇ
ꢄꢁꢀ
ꢄꢁꢂ
ꢄꢁꢃ
ꢗ
ꢘꢙꢘꢁꢏꢚꢓꢛꢜꢝꢀꢓꢞꢑꢐꢘꢗꢏ ꢌꢞꢖꢜꢘꢘ!ꢗ"
ꢘ ꢁꢂꢃꢄꢅꢆꢇꢂꢖꢋꢄꢄꢍꢇꢏꢂꢑꢙꢒ
ꢀꢁ
ꢁ
ꢀꢁꢂꢃꢄꢅꢆꢓꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢆꢙꢐꢈ
ꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍꢆꢊꢎꢛꢆꢒꢊꢍꢅꢆꢗꢘꢜꢍꢊꢂꢅ
ꢀꢁꢂꢃꢄꢅꢆꢝꢈꢆꢞꢘꢛ ꢆꢚꢁꢘꢛꢅꢆꢀꢘꢄ!ꢊꢄꢛꢆꢗꢘꢜꢍꢊꢂꢅꢆ
ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ
ꢊꢎꢛꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢇꢃꢁ
ꢀꢄ
ꢀꢁ
ꢆ
ꢀ
ꢃꢄꢄꢁꢂꢁꢀꢅꢄꢁꢃꢁꢀꢅꢆꢁꢄꢀꢆꢄꢁꢂꢁꢅꢆꢇꢈꢉꢊꢋꢌ
ꢀ
ꢁꢂꢁꢀ ꢁꢃꢁꢀ
ꢀ
ꢁꢂꢁꢅꢆꢀ
ꢇꢄꢄ
ꢆꢄ
ꢅꢆ
ꢃꢄ
ꢀꢈꢄꢄꢁꢂꢁꢀꢅꢆ
ꢇꢁꢁ
ꢄꢃꢁ
ꢄꢁꢁ
ꢀꢃꢁ
ꢀꢁꢁ
ꢃꢁ
ꢀ
ꢁꢂꢁꢃꢄꢅꢀ
ꢃꢄ
ꢀ
ꢁꢂꢁꢄꢆꢆꢀ
ꢃꢄ
ꢇ
ꢈꢆꢆ
ꢇ
ꢇꢆꢆ
ꢅ
ꢀ
ꢁꢍꢇꢉꢊꢅꢁꢎ
ꢂ
ꢁꢁꢁꢏꢐꢁꢑꢀꢁꢁꢂꢁꢒꢁꢑ
ꢁꢁꢁꢓꢐꢁꢔꢁꢂꢁꢏꢁꢕꢖꢗ
ꢇ
ꢅꢆꢆ
ꢄ
ꢀ
ꢀꢁꢂꢃꢄꢀꢆꢀꢘ ꢀꢊꢀꢙꢈꢕꢀꢚ
ꢂ
ꢁ
ꢁ
ꢀꢁ
ꢂ
ꢀꢁ
ꢁ
ꢀꢁ
ꢁ
ꢀ
ꢄ
3
ꢂ
ꢃ
ꢀꢁ
ꢓ ꢁꢂꢔꢊꢏꢅꢎꢂꢕꢅꢏꢍꢂꢖꢗꢅꢄꢐꢍꢂꢑꢇꢖꢒ
ꢀ
ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢋꢄꢌꢍꢂꢀꢊꢎꢏꢅꢐꢍꢂꢑꢀꢒ
ꢂ
ꢁꢀ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
www.onsemi.com
3
(Continued)
Typical Characteristics
ꢂ
ꢀ
ꢇꢉꢁ
ꢄꢉꢃ
ꢄꢉꢁ
ꢀꢉꢃ
ꢀꢉꢁ
ꢁꢉꢃ
ꢁꢉꢁ
ꢁꢅꢄ
ꢁꢅꢁ
ꢁꢅꢂ
ꢂꢅꢇ
ꢂꢅꢆ
ꢀꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢀꢉ
ꢇꢈ
ꢀ
ꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀꢀꢀꢌꢈꢀꢍ ꢀꢊꢀꢌꢎꢋꢀꢁꢏ
ꢉ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢇꢋꢀꢉ
ꢀꢁ
ꢀꢀꢀꢌꢈꢀꢘ ꢀꢊꢀꢇꢈꢓꢀꢚ
ꢂ
ꢀꢁꢂꢂ
ꢀꢃꢂ
ꢂ
ꢃꢂ
ꢁꢂꢂ
ꢁꢃꢂ
ꢄꢂꢂ
ꢊꢀꢁꢁ
ꢊꢃꢁ
ꢁ
ꢃꢁ
ꢀꢁꢁ
ꢀꢃꢁ
ꢄꢁꢁ
ꢔ ꢁꢂ"ꢋꢇꢌꢏꢆꢊꢇꢂꢔꢍ !ꢍꢄꢅꢏꢋꢄꢍꢂꢑꢆꢖꢒ
ꢀꢂꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢂꢀꢊꢋꢌꢊꢍꢎꢇꢄꢍꢊꢂꢏꢃꢐꢑ
ꢅ
ꢀꢁꢂꢃꢄꢅꢆ-ꢈꢆꢞꢄꢅꢊ.ꢛꢘ!ꢎꢆꢗꢘꢜꢍꢊꢂꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀꢁꢂꢃꢄꢅꢆ/ꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢇꢉꢁ
ꢄꢉꢃ
ꢄꢉꢁ
ꢀꢉꢃ
ꢀꢉꢁ
ꢁꢉꢃ
ꢁꢉꢁ
ꢘꢙꢊꢈꢚꢉꢛꢇꢜꢁꢛꢜꢁꢝꢆꢛꢅꢁꢞꢈꢊꢚꢁ
ꢛꢅꢁ ꢛ!ꢛꢉꢊꢋꢁ"#ꢁ$ꢁꢍꢁꢎꢇꢏꢐ
ꢁ
ꢀꢁ
ꢃꢆꢆꢁµꢈ
ꢃꢁꢒꢈ
ꢃꢆꢁꢒꢈ
ꢐꢇ
ꢂ
ꢀꢁ
ꢀ
ꢁꢍꢇꢉꢊꢅꢁꢎ
ꢁꢁꢁꢏꢐꢁꢝꢂꢁꢂꢁꢓ%ꢁꢇꢀ
ꢁꢁꢁꢓꢐꢁꢝꢉꢁꢂꢁꢏ%ꢒꢁꢇꢀ
ꢁꢁꢁ&ꢐꢁ'ꢛꢜ()ꢊꢁ*+)ꢅꢊ
ꢀꢁ
ꢀꢁ
ꢂ
ꢁ
ꢆ
ꢄꢃ
ꢃꢁ
ꢈꢃ
ꢀꢁꢁ
ꢀꢄꢃ
ꢀꢃꢁ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢀ
ꢔ ꢁꢂꢖꢅꢞꢍꢂꢔꢍ !ꢍꢄꢅꢏꢋꢄꢍꢂꢑ
ꢒ
ꢀ
ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢋꢄꢌꢍꢂꢀꢊꢎꢏꢅꢐꢍꢂꢑꢀꢒ
ꢄ
ꢁꢀ
ꢀꢁꢂꢃꢄꢅꢆ(ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆ"ꢊ&ꢅꢆꢔꢋꢅꢄꢊꢍꢁꢎꢂꢆ+ꢄꢅꢊ
ꢀꢁꢂꢃꢄꢅꢆ',ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍ
ꢙꢐꢈꢆꢆꢉꢊꢐꢅꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢐ ꢂ ꢆ ꢑꢅ
ꢀ ꢁ ꢂ
ꢀ
ꢀꢁ ꢂ ꢃꢄ ꢅ ꢀꢆ
ꢆ ꢑꢄ
ꢀꢀꢀꢇ ꢈꢀꢛ ꢜꢃꢝꢀꢊ ꢀꢙ ꢈꢞ ꢀ
ꢂ
!
ꢀ" # $ ꢈ
ꢀ
ꢉ ꢂ
ꢀꢀꢀꢌ ꢈꢀ% ꢏ ꢃ&ꢀ' # ( ꢃꢂ )*ꢀ% ꢊ ꢃꢊ ꢃꢋ
ꢀꢀꢀꢙ ꢈꢀꢑ ꢀ+ꢀꢑ ꢀꢊ ꢀꢎ ꢀ, ꢀꢛ
ꢜꢃꢝ
ꢀ
ꢉ ꢂ
ꢉ ꢌ
ꢂ
ꢍ
ꢌ
ꢆ ꢑꢃ
ꢆ ꢑꢆ ꢅ
"
ꢀꢅ
ꢆ ꢑꢆ ꢄ
ꢀ ꢁ ꢀꢁ
ꢃꢄ
ꢆ ꢑꢆ ꢃ
ꢈ ꢉꢊ ꢋ ꢌꢍ ꢁꢎ ꢏ ꢌꢈ ꢍ
ꢃꢆ
ꢀ ꢁ ꢀꢃ
ꢀ ꢁ ꢀꢄ
ꢀ ꢁ ꢀꢅ
ꢀ ꢁ ꢀꢆ
ꢀ ꢁ ꢀꢁ
ꢀ ꢁ ꢂ
ꢀ ꢁ ꢁ
ꢏ
ꢁꢂꢉ ꢚ ꢋ ꢅ ꢄꢍ ꢂꢛ ꢅ ꢜ ꢍ ꢂꢝ ꢋ ꢎꢞ ꢍ ꢂꢃ ꢋ ꢄꢅ ꢏꢆꢊ ꢇ ꢂꢑꢞ ꢍ ꢌ ꢒ
ꢃ
ꢀꢁꢂꢃꢄꢅꢆ''ꢈꢆ#ꢄꢊꢎꢐꢁꢅꢎꢍꢆ#ꢏꢅꢄ$ꢊꢜꢆꢖꢅꢐꢋꢘꢎꢐꢅꢆꢉꢃꢄꢙꢅ
www.onsemi.com
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
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7
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❖
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