FQD5P10TM [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-100 V，-3.6 A，1.05 Ω，DPAK;
| 型号： | FQD5P10TM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-100 V，-3.6 A，1.05 Ω，DPAK 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：997K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQD5P10
P-Channel QFET MOSFET
-100 V, -3.6 A, 1.05Ω
®
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
-3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V,
D = 1.8 A
I
•
•
•
Low Gate Charge (Typ. 6.3 nC)
Low Crss (Typ. 18 pF)
100% avalanche tested
D
D
G
G
D-PAK
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FQD5P10
-100
-3.6
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
-2.28
-14.4
30
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
55
mJ
A
-3.6
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
2.5
mJ
V/ns
W
-6.0
2.5
Power Dissipation (TC = 25°C)
25
W
- Derate above 25°C
Operating and Storage Temperature Range
0.2
W/°C
°C
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
300
°C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
FQD5P10
5.0
Unit
°C/W
°C/W
°C/W
RJC
RJA
RJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
50
110
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQD5P10/D
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = -250 A
Drain-Source Breakdown Voltage
-100
--
--
--
--
V
BVDSS
Breakdown Voltage Temperature
ID = -250 A, Referenced to 25°C
-0.1
V/°C
/
TJ Coefficient
IDSS
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 125°C
--
--
--
--
--
--
--
--
-1
A
A
nA
nA
Zero Gate Voltage Drain Current
-10
IGSSF
IGSSR
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
VGS = 30 V, VDS = 0 V
On Characteristics
VGS(th)
VDS = VGS, ID = -250 A
Gate Threshold Voltage
-2.0
--
--
-4.0
1.05
--
V
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.8 A
0.82
2.3
gFS
VDS = -40 V, ID = -1.8 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
190
70
250
90
pF
pF
pF
V
DS = -25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
18
25
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
9
30
150
35
70
8.2
--
ns
ns
V
DD = -50 V, ID = -4.5 A,
70
12
30
6.3
1.7
3.0
RG = 25
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = -80 V, ID = -4.5 A,
GS = -10 V
Qgs
Qgd
V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-3.6
-14.4
-4.0
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -3.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = -4.5 A,
85
0.27
ns
C
dIF / dt = 100 A/s
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.4mH, I = -3.6A, V = -25V, R = 25 Starting T = 25°C
AS
DD
G
J
3. I ≤ -4.5A, di/dt ≤ 300A/s, V
≤ BV Starting T = 25°C
4. Essentially independent of operating temperature
SD
DD
DSS, J
www.onsemi.com
2
Typical Characteristics
101
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
101
100
Bottom: -4.5 V
150℃
25℃
100
-1
10
※ Notes :
1. VDS = -40V
2. 250μs Pulse Test
※ Note :
1. 250μs Pulse Test
2. TC = 25℃
-55℃
-2
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
101
VGS = - 10V
VGS = - 20V
100
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
450
400
350
300
250
200
150
100
50
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = -20V
VDS = -50V
C
Coss
VDS = -80V
C
iss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
6
C
rss
4
2
※ Note : ID = -4.5 A
0
10
0
-1
100
101
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
※Notes :
1. VGS = -10 V
2. ID = -1.8 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
100 s
1 ms
10 ms
DC
100
※ Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
-1
10
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
:
1 0 0
0 .2
=
5 .0 ℃ /W M a x.
0 .1
3 . T JM
-
T C
=
P D M * Z θ JC(t)
0 .0 5
0 .0 2
0 .0 1
PDM
1 0 -1
t1
s in g le p u ls e
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
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5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
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6
Package Dimensions
D-PAK
Dimensions in Millimeters
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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www.onsemi.com
❖
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