FQD9N25TM [ONSEMI]
功率 MOSFET,N 沟道,QFET®, 250 V,7.4 A,420 mΩ,DPAK;型号: | FQD9N25TM |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,QFET®, 250 V,7.4 A,420 mΩ,DPAK 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:1074K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQD9N25 / FQU9N25
N-Channel QFET® MOSFET
250 V, 7.4 A, 420 mΩ
Features
7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V,
ID = 3.7 A
•
Description
•
•
•
Low Gate Charge (Typ. 15.5 nC)
Low Crss (Typ. 15 pF)
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
100% Avalanche Tested
D
D
G
I-PAK
G
S
D-PAK
G
D
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter
S
FQD9N25TM
FQD9N25TM-F080
Unit
FQU9N25TU
)*+
,
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢁꢉꢊꢋ,ꢇꢌꢍꢂꢎꢊ
,
(
ꢀꢁꢁ
5
ꢅꢋꢏꢇꢄꢍꢃꢄꢈꢇꢈꢐꢋ2ꢑ ꢋ.ꢋ)*6ꢏ3
ꢂ
ꢀꢁꢂꢃꢄꢋꢏꢈꢁꢁꢊꢄꢍ
& '
ꢀ
ꢅꢋꢏꢇꢄꢍꢃꢄꢈꢇꢈꢐꢋ2ꢑ ꢋ.ꢋ0++6ꢏ3
ꢂ
' &
(
5
ꢀꢁꢂꢃꢄꢅꢆꢇ
ꢀꢁꢂꢃꢄꢋꢏꢈꢁꢁꢊꢄꢍ
ꢅꢋ7ꢈꢌꢐꢊꢒ
)8 9
±ꢀ;+
09*
(
ꢀꢃ
,
<
5
:ꢂꢍꢊꢅꢆꢇꢈꢁꢉꢊꢋ,ꢇꢌꢍꢂꢎꢊ
,
ꢄꢁꢁ
ꢅꢁ
ꢀꢁꢂꢃꢄꢅꢈꢇ
ꢀꢁꢂꢃꢄꢅꢆꢇ
ꢀꢁꢂꢃꢄꢅꢆꢇ
ꢀꢁꢂꢃꢄꢅꢉꢇ
ꢆꢃꢄꢎꢌꢊꢋ7ꢈꢌꢐꢊꢒꢋ(!ꢂꢌꢂꢄꢉꢓꢊꢋ<ꢄꢊꢁꢎꢔ
(!ꢂꢌꢂꢄꢉꢓꢊꢋꢏꢈꢁꢁꢊꢄꢍ
ꢕ=
(
& '
ꢅꢆ
<
-ꢊꢖꢊꢍꢃꢍꢃ!ꢊꢋ(!ꢂꢌꢂꢄꢉꢓꢊꢋ<ꢄꢊꢁꢎꢔ
7ꢊꢂ>ꢋꢀꢃꢇꢒꢊꢋ-ꢊꢉꢇ!ꢊꢁꢔꢋꢒ!$ꢒꢍ
* *
ꢕ=
,$ꢄꢐ
@
ꢅꢆ
ꢒ!$ꢒꢍ
* *
7ꢇꢗꢊꢁꢋꢀꢃꢐꢐꢃꢖꢂꢍꢃꢇꢄꢋ2ꢑ ꢋ.ꢋ)*6ꢏ3ꢋ?
ꢅ
) *
7
ꢀ
7ꢇꢗꢊꢁꢋꢀꢃꢐꢐꢃꢖꢂꢍꢃꢇꢄꢋ2ꢑ ꢋ.ꢋ)*6ꢏ3
ꢂ
**
@
ꢅꢋꢀꢊꢁꢂꢍꢊꢋꢂ"ꢇ!ꢊꢋ)*6ꢏ
ꢙꢖꢊꢁꢂꢍꢃꢄꢎꢋꢂꢄꢒꢋꢆꢍꢇꢁꢂꢎꢊꢋꢑꢊꢕꢖꢊꢁꢂꢍꢈꢁꢊꢋ-ꢂꢄꢎꢊ
+ ''
ꢅ**ꢋꢍꢇꢋA0*+
@$6ꢏ
6ꢏ
ꢑ ꢘꢋꢑ
ꢇ
ꢁꢈꢄ
ꢚꢂBꢃꢕꢈꢕꢋꢌꢊꢂꢒꢋꢍꢊꢕꢖꢊꢁꢂꢍꢈꢁꢊꢋꢛꢇꢁꢋꢐꢇꢌꢒꢊꢁꢃꢄꢎꢋꢖꢈꢁꢖꢇꢐꢊꢐꢘ
ꢑ
;++
6ꢏ
ꢉ
0$Cꢀꢋꢛꢁꢇꢕꢋꢉꢂꢐꢊꢋꢛꢇꢁꢋ*ꢋꢐꢊꢉꢇꢄꢒꢐ
Thermal Characteristics
FQD9N25TM
FQD9N25TM-F080
Symbol
Parameter
Unit
FQU9N25TU
RJC
RJA
Thermal Resistance, Junction to Case, Max.
2.27
110
50
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
oC/W
Publication Order Number:
FQU9N25/D
©2000 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Package Marking and Ordering Information
Part Number
FQD9N25TM
Top Mark
FQD9N25
FQD9N25
FQU9N25
Package
D-PAK
D-PAK
I-PAK
Packing Method Reel Size
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
70 units
330 mm
330 mm
N/A
Tape and Reel
Tape and Reel
Tube
FQD9N25TM-F080
FQU9N25TU
Electrical Characteristics TC = 25oC unless otherwise noted.
ꢀꢁꢂꢃꢄꢅ
ꢆꢇꢈꢇꢂꢉꢊꢉꢈ
ꢋꢉꢌꢊꢍꢎꢄꢏꢐꢑꢊꢑꢄꢏꢌ
ꢒꢑꢏ
ꢋꢁꢓ
ꢒꢇꢔ
ꢕꢏꢑꢊꢌ
ꢀꢁꢁꢂꢃꢄꢅꢆꢅꢇꢈꢉꢆꢊꢋꢈꢊꢇꢋ
D,
,
ꢀ.ꢀ+ꢀ,ꢁꢀ5 ꢀ.ꢀ)*+ꢀµ(
ꢂꢃꢄꢅꢆꢇꢈꢉꢊꢃꢋꢌꢀDꢃꢌꢄ>ꢍꢉꢎꢆꢀ,ꢉꢏꢐꢄꢑꢌꢀ
)*+
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
,
ꢀꢁꢁ
ꢂꢁ
ꢀ
∆D,
Dꢃꢌꢄ>ꢍꢉꢎꢆꢀ,ꢉꢏꢐꢄꢑꢌꢀꢒꢌꢓꢔꢌꢃꢄꢐꢊꢃꢌꢀ
ꢕꢉꢌꢖꢖꢅꢋꢅꢌꢆꢐꢀ
ꢀꢁꢁ
5 ꢀ.ꢀ)*+ꢀµ(ꢁꢀ-ꢌꢖꢌꢃꢌꢆꢋꢌꢍꢀꢐꢉꢀ)*6ꢕ
+ )
,$6ꢕ
ꢀ
$ꢀꢀꢀꢀꢀ∆ꢒ
ꢃ
5
,
,
,
,
ꢀ.ꢀ)*+ꢀ,ꢁꢀ, ꢀ.ꢀ+ꢀ,
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
0
µ(
µ(
ꢆ(
ꢆ(
ꢀꢁꢁ
ꢀꢁ
ꢀꢁ
ꢂꢁ
ꢂꢁ
ꢂꢁ
Eꢌꢃꢉꢀ:ꢄꢐꢌꢀ,ꢉꢏꢐꢄꢑꢌꢀꢂꢃꢄꢅꢆꢀꢕꢊꢃꢃꢌꢆꢐ
ꢀ.ꢀ)++ꢀ,ꢁꢀꢒ ꢀ.ꢀ0)*6ꢕ
0+
ꢄ
5
ꢀ.ꢀ;+ꢀ,ꢁꢀ, ꢀ.ꢀ+ꢀ,ꢀ
ꢀꢁ
:ꢄꢐꢌꢇDꢉꢍꢗꢀ1ꢌꢄ>ꢄꢑꢌꢀꢕꢊꢃꢃꢌꢆꢐꢁꢀꢘꢉꢃꢎꢄꢃꢍ
:ꢄꢐꢌꢇDꢉꢍꢗꢀ1ꢌꢄ>ꢄꢑꢌꢀꢕꢊꢃꢃꢌꢆꢐꢁꢀ-ꢌ!ꢌꢃꢙꢌ
0++
ꢇ0++
ꢂꢁꢁꢅ
5
ꢀ.ꢀꢇ;+ꢀ,ꢁꢀ, ꢀ.ꢀ+ꢀ,ꢀ
ꢀꢁ
ꢂꢁꢁꢆ
ꢀꢌꢂꢃꢄꢅꢆꢅꢇꢈꢉꢆꢊꢋꢈꢊꢇꢋꢂꢂꢂ
,
,
,
,
ꢀ.ꢀ, ꢁꢀ5 ꢀ.ꢀ)*+ꢀµ(
:ꢄꢐꢌꢀꢒꢚꢃꢌꢙꢚꢉꢏꢍꢀ,ꢉꢏꢐꢄꢑꢌꢀ
; +
ꢇꢇ
ꢇꢇ
* +
+ ')
ꢇꢇ
,
Ω
ꢈ
ꢂꢁꢇꢈꢉꢊ
ꢀꢁ
ꢂꢁ
ꢀꢁ
ꢂꢁ
ꢀ
-
ꢑ
ꢈꢐꢄꢐꢅꢋꢀꢂꢃꢄꢅꢆꢇꢈꢉꢊꢃꢋꢌꢀ
ꢛꢆꢇ-ꢌꢙꢅꢙꢐꢄꢆꢋꢌ
ꢀꢁꢇꢋꢌꢊ
ꢀ.ꢀ0+ꢀ,ꢁꢀ5 ꢀ.ꢀ; &ꢀ(
ꢀ
+ ;;
9 C
ꢀ.ꢀ*+ꢀ,ꢁꢀ5 ꢀ.ꢀ; &ꢀ(ꢀꢀꢀꢀꢀ
ꢘꢉꢃꢎꢄꢃꢍꢀꢒꢃꢄꢆꢙꢋꢉꢆꢍꢊꢋꢐꢄꢆꢋꢌ
ꢇꢇ
ꢅꢁ
ꢀ
ꢍꢎꢌꢅꢏꢊꢇꢂꢃꢄꢅꢆꢅꢇꢈꢉꢆꢊꢋꢈꢊꢇꢋ
ꢕ
ꢕ
ꢕ
5ꢆꢔꢊꢐꢀꢕꢄꢔꢄꢋꢅꢐꢄꢆꢋꢌ
ꢇꢇ
ꢇꢇ
ꢇꢇ
*'+
00+
0*
&++
0'*
)+
ꢔꢘ
ꢔꢘ
ꢔꢘ
ꢍꢎꢎ
,
ꢀ.ꢀ)*ꢀ,ꢁꢀ, ꢀ.ꢀ+ꢀ,ꢁꢀ
ꢂꢁ
ꢀꢁ
ꢛꢊꢐꢔꢊꢐꢀꢕꢄꢔꢄꢋꢅꢐꢄꢆꢋꢌ
ꢋꢎꢎ
ꢏꢎꢎ
ꢖꢀ.ꢀ0 +ꢀꢜF#
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
-ꢌ!ꢌꢃꢙꢌꢀꢒꢃꢄꢆꢙꢖꢌꢃꢀꢕꢄꢔꢄꢋꢅꢐꢄꢆꢋꢌ
ꢐꢑꢊꢈꢇꢄꢊꢌꢒꢂꢃꢄꢅꢆꢅꢇꢈꢉꢆꢊꢋꢈꢊꢇꢋꢂꢂꢂ
ꢐ
ꢐ
ꢐ
ꢐ
ꢒꢊꢃꢆꢇꢛꢆꢀꢂꢌꢏꢄꢗꢀꢒꢅꢓꢌ
ꢒꢊꢃꢆꢇꢛꢆꢀ-ꢅꢙꢌꢀꢒꢅꢓꢌ
ꢒꢊꢃꢆꢇꢛꢖꢖꢀꢂꢌꢏꢄꢗꢀꢒꢅꢓꢌ
ꢒꢊꢃꢆꢇꢛꢖꢖꢀꢘꢄꢏꢏꢀꢒꢅꢓꢌ
ꢒꢉꢐꢄꢏꢀ:ꢄꢐꢌꢀꢕꢚꢄꢃꢑꢌ
:ꢄꢐꢌꢇꢈꢉꢊꢃꢋꢌꢀꢕꢚꢄꢃꢑꢌ
:ꢄꢐꢌꢇꢂꢃꢄꢅꢆꢀꢕꢚꢄꢃꢑꢌ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
0;
0+*
)*
;*
))+
9+
0++
)+
ꢇꢇ
ꢆꢙ
ꢆꢙ
ꢐꢇꢋꢌꢊ
,
ꢀ.ꢀ0)*ꢀ,ꢁꢀ5 ꢀ.ꢀ8 'ꢀ(ꢁ
ꢀ
ꢀꢀ
ꢏ
- ꢀ.ꢀ)*ꢀΩ
ꢂ
ꢆꢙ
ꢐꢇꢋꢑꢑꢊ
ꢑ
ꢀꢁꢂꢃꢄꢅꢀꢆꢇ
ꢀꢁꢂꢃꢄꢅꢀꢆꢇ
'*
ꢆꢙ
G
G
G
0* *
; C
C *
ꢆꢕ
ꢆꢕ
ꢆꢕ
ꢒ
,
,
ꢀ.ꢀ)++ꢀ,ꢁꢀ5 ꢀ.ꢀ8.'ꢀ(ꢁ
ꢀꢁ
ꢀ
ꢒꢎ
ꢒꢐ
ꢀ.ꢀ0+ꢀ,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀ ꢀ
ꢂꢁ
ꢇꢇ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢍꢆꢅꢊꢌꢓꢐꢔꢕꢆꢇꢉꢂꢍꢊꢔꢖꢉꢂꢃꢄꢅꢆꢅꢇꢈꢉꢆꢊꢋꢈꢊꢇꢋꢂꢅꢌꢖꢂꢗꢅꢘꢊꢏꢕꢏꢂꢙꢅꢈꢊꢌꢒꢋ
5
ꢜꢄBꢅꢓꢊꢓꢀꢕꢉꢆꢐꢅꢆꢊꢉꢊꢙꢀꢂꢃꢄꢅꢆꢇꢈꢉꢊꢃꢋꢌꢀꢂꢅꢉꢍꢌꢀꢘꢉꢃꢎꢄꢃꢍꢀꢕꢊꢃꢃꢌꢆꢐ
ꢜꢄBꢅꢓꢊꢓꢀ7ꢊꢏꢙꢌꢍꢀꢂꢃꢄꢅꢆꢇꢈꢉꢊꢃꢋꢌꢀꢂꢅꢉꢍꢌꢀꢘꢉꢃꢎꢄꢃꢍꢀꢕꢊꢃꢃꢌꢆꢐ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
ꢇꢇ
& '
)8 9
0 *
ꢇꢇ
(
(
ꢁ
5
ꢁꢓ
,
ꢐ
,
,
ꢀ.ꢀ+ꢀ,ꢁꢀ5 ꢀ.ꢀ& 'ꢀ(ꢀꢀ
ꢁ
ꢂꢃꢄꢅꢆꢇꢈꢉꢊꢃꢋꢌꢀꢂꢅꢉꢍꢌꢀꢘꢉꢃꢎꢄꢃꢍꢀ,ꢉꢏꢐꢄꢑꢌ
-ꢌ!ꢌꢃꢙꢌꢀ-ꢌꢋꢉ!ꢌꢃꢗꢀꢒꢅꢓꢌ
ꢇꢇ
,
ꢁꢀ
ꢂꢁ
ꢂꢁ
ꢀ.ꢀ+ꢀ,ꢁꢀ5 ꢀ.ꢀ8 'ꢀ(ꢁ
ꢁ
0*+
+ C
ꢆꢙ
µꢕ
ꢏꢏ
ꢍ5 ꢀ$ꢀꢍꢐꢀ.ꢀ0++ꢀ($µꢙꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
G
-ꢌ!ꢌꢃꢙꢌꢀ-ꢌꢋꢉ!ꢌꢃꢗꢀꢕꢚꢄꢃꢑꢌ
ꢇꢇ
ꢅ
ꢏꢏ
ꢀꢁꢂꢃꢄꢅ
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.8 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 9.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
www.onsemi.com
2
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
ꢀ
ꢂ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢁ
ꢀꢁ
ꢂꢃꢄꢀꢅꢀꢀꢀꢀꢀꢀꢀꢆꢇꢈꢉꢀꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢆꢉꢈꢉꢀꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢊꢈꢉꢀꢁ
ꢅꢀꢁ
ꢀꢁꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢋꢈꢉꢀꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢌꢈꢇꢀꢁ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢌꢈꢉꢀꢁ
ꢍꢃꢎꢎꢃꢏꢀꢅꢀꢀꢀꢀꢇꢈꢇꢀꢁ
ꢀ
ꢅꢇꢀ
ꢀ
ꢂꢇ
ꢅꢀꢂ
ꢀꢁꢂ
ꢀ
ꢈꢇꢇ
ꢀ
ꢀ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢀꢀꢀꢆꢈꢀꢁ ꢀꢗꢀꢇꢉꢁ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢁ
ꢀꢀꢀꢆꢈꢀꢓꢇꢉ ꢒꢀꢔꢕꢖꢒꢑꢀꢂꢑꢒꢎ
ꢂ
ꢃꢁ
ꢀꢀꢀꢓꢈꢀꢂ ꢀꢗꢀꢓꢇ
ꢁ
ꢀꢀꢀꢓꢈꢀꢓꢇꢉ ꢒꢀꢔꢕꢖꢒꢑꢀꢂꢑꢒꢎ
ꢂ
ꢀꢁ
ꢅꢀ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢀꢁꢂ
ꢀꢁꢁ
ꢂ
ꢃ
ꢄ
ꢆ
ꢅꢀ
ꢏ ꢂꢁꢂꢖꢅꢋꢊꢐꢑꢒꢉꢄꢓꢊꢂꢏꢒꢔꢋꢅꢕꢊꢂꢂꢌꢏꢎ
ꢂꢁ
ꢏ
ꢁꢂꢃꢄꢅꢆꢇꢐꢑꢒꢉꢄꢓꢊꢂꢏꢒꢔꢋꢅꢕꢊꢂꢌꢏꢎ
ꢀꢁ
ꢀꢁꢂꢃꢄꢅꢆ'ꢈꢆꢔꢎꢕꢖꢅꢂꢁꢘꢎꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆ%ꢈꢆ#ꢄꢊꢎꢐ&ꢅꢄꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀ
ꢂ
ꢅꢊꢁ
ꢀꢊꢇ
ꢀꢊꢅ
ꢁꢊꢄ
ꢁꢊꢆ
ꢁꢊꢁ
ꢅꢀꢁ
ꢉ
ꢊꢋꢊꢅꢀꢉ
ꢉꢄ
ꢉ
ꢊꢋꢊꢂꢀꢉ
ꢉꢄ
ꢅꢀꢂ
ꢀ
ꢀꢁꢂꢃꢄꢅꢀꢆ
ꢀ
ꢅꢇꢀ
ꢀ
ꢂꢇ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢉ
ꢀꢁ
ꢁ
ꢀꢀꢀꢌꢈꢀꢌꢍꢋ ꢅꢀꢎꢏꢐꢅꢄꢀꢑꢄꢅꢃ
ꢀ
ꢂ
ꢀꢁꢂꢃꢄꢀꢆꢀꢑ ꢀꢊꢀꢌꢍ
ꢊ
ꢀꢁ
ꢅꢀ
ꢀꢁꢂ
ꢀꢁꢃ
ꢀꢁꢄ
ꢀꢁꢆ
ꢅꢁꢀ
ꢅꢁꢂ
ꢅꢁꢃ
ꢅꢁꢄ
ꢅꢁꢆ
ꢂꢁꢀ
ꢁ
ꢃ
ꢀꢁ
ꢀꢃ
ꢅꢁ
ꢅꢃ
ꢈꢁ
ꢏ
ꢂꢁꢂꢑꢒꢉꢄꢓꢊꢐꢃꢄꢅꢆꢇꢂꢏꢒꢔꢋꢅꢕꢊꢂꢂꢌꢏꢎ
ꢀ ꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢄꢄꢊꢇꢋꢂꢌꢍꢎ
ꢁꢀ
ꢀ
ꢀꢁꢂꢃꢄꢅꢆꢓꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢆꢙꢐꢈ
ꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍꢆꢊꢎꢛꢆꢒꢊꢍꢅꢆꢗꢘꢜꢍꢊꢂꢅ
ꢀꢁꢂꢃꢄꢅꢆꢝꢈꢆꢞꢘꢛ ꢆꢚꢁꢘꢛꢅꢆꢀꢘꢄ!ꢊꢄꢛꢆꢗꢘꢜꢍꢊꢂꢅꢆ
ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ"ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ
ꢊꢎꢛꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢀꢅ
ꢀꢁ
ꢄ
ꢀꢅꢁꢁ
ꢀꢁꢁꢁ
ꢄꢁꢁ
ꢇꢁꢁ
ꢆꢁꢁ
ꢅꢁꢁ
ꢁ
ꢘ
ꢀꢗꢀꢘ ꢀꢙꢀꢘ ꢀꢚꢘ ꢀꢗꢀꢒꢛꢃꢜꢎꢑꢝꢞ
ꢆꢅ ꢆꢇ ꢇꢅ
ꢄꢅꢅ
ꢘ
ꢀꢗꢀꢘ ꢀꢙꢀꢘ
ꢇꢅ ꢆꢇ
ꢈꢅꢅ
ꢉ ꢊꢋꢊꢇꢀꢉ
ꢃꢄ
ꢘ
ꢀꢗꢀꢘ
ꢆꢇ
ꢉꢅꢅ
ꢉ
ꢊꢋꢊꢅꢂꢇꢉ
ꢃꢄ
ꢉ
ꢊꢋꢊꢂꢀꢀꢉ
ꢃꢄ
ꢌ
ꢈꢆꢆ
ꢌ
ꢇꢆꢆ
ꢇ
ꢀ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢆ
ꢀꢀꢀꢆꢈꢀꢁ ꢀꢗꢀꢉꢀꢁ
ꢀꢁ
ꢌ
ꢀꢀꢀꢓꢈꢀ ꢀꢗꢀꢆꢀ!"#
ꢅꢆꢆ
ꢅ
ꢀ
ꢀꢁꢂꢃꢄꢀꢆꢀꢒ ꢀꢊꢀꢓꢈꢔꢀꢕ
ꢂ
ꢁ
ꢀꢁꢀꢁ
ꢀꢁꢂ
ꢀꢁꢁ
ꢁ
ꢈ
ꢉ
ꢀꢅ
ꢀꢃ
ꢀꢄ
ꢏ
ꢁꢂꢃꢄꢅꢆꢇꢐꢑꢒꢉꢄꢓꢊꢂꢏꢒꢔꢋꢅꢕꢊꢂꢌꢏꢎ
ꢗ ꢁꢂꢘꢒꢋꢅꢔꢂꢖꢅꢋꢊꢂꢈꢙꢅꢄꢕꢊꢂꢌꢇꢈꢎ
ꢂ
ꢀꢁ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
www.onsemi.com
3
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ
ꢂ
ꢀ
ꢈꢊꢁ
ꢅꢊꢃ
ꢅꢊꢁ
ꢀꢊꢃ
ꢀꢊꢁ
ꢁꢊꢃ
ꢁꢊꢁ
ꢁꢅꢄ
ꢁꢅꢁ
ꢁꢅꢂ
ꢀꢀꢁꢂꢃꢄꢅꢀꢆ
ꢂꢅꢇ
ꢀꢀꢀꢇꢈꢀꢉ ꢀꢊꢀꢋꢀꢉ
ꢀꢁ
ꢀ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢀꢀꢀꢌꢈꢀꢍ ꢀꢊꢀꢌꢎꢋꢀꢁꢏ
ꢂ
ꢀꢀꢀꢆꢈꢀꢁ ꢀꢗꢀꢆꢉꢀꢁ
ꢀꢁ
ꢀꢀꢀꢓꢈꢀ0 ꢀꢗꢀ1ꢈꢋꢀ(
ꢃ
ꢂꢅꢆ
ꢀꢁꢂꢂ
ꢀꢃꢂ
ꢂ
ꢃꢂ
ꢁꢂꢂ
ꢁꢃꢂ
ꢄꢂꢂ
ꢌꢀꢁꢁ
ꢌꢃꢁ
ꢁ
ꢃꢁ
ꢀꢁꢁ
ꢀꢃꢁ
ꢅꢁꢁ
ꢘ ꢁꢂ#ꢉꢇꢓꢋꢆꢒꢇꢂꢘꢊ"ꢚꢊꢄꢅꢋꢉꢄꢊꢂꢌꢆꢈꢎ
ꢀ ꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢂꢀꢊꢋꢌꢊꢍꢎꢇꢄꢍꢊꢂꢏꢃꢐꢑ
ꢅ
ꢂ
ꢀꢁꢂꢃꢄꢅꢆ-ꢈꢆꢞꢄꢅꢊ.ꢛꢘ!ꢎꢆꢗꢘꢜꢍꢊꢂꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀꢁꢂꢃꢄꢅꢆ/ꢈꢆꢔꢎꢕꢖꢅꢐꢁꢐꢍꢊꢎꢌꢅꢆꢗꢊꢄꢁꢊꢍꢁꢘꢎ
ꢙꢐꢈꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢀ
ꢄ
ꢇ
ꢆ
ꢅ
ꢁ
ꢆ
ꢀꢁ
$ꢄꢑꢜ%ꢎ&ꢃ'ꢀ&'ꢀꢂꢛ&ꢒꢀ(ꢜꢑ%ꢀ
&ꢒꢀ)&ꢏ&ꢎꢑꢝꢀ*+ꢀ,ꢀꢃꢁꢎꢈꢏꢐ
ꢅꢀꢊ ꢍ
µ
ꢅꢀꢀꢊµꢍ
ꢁ
ꢀꢁ
ꢅꢊꢖꢍ
ꢅꢀꢊꢖꢍ
ꢕꢌ
ꢂ
ꢀꢁ
ꢀ
ꢀꢐꢃꢎꢑꢒꢀꢅ
ꢀꢀꢀꢆꢈꢀꢂꢂꢀꢗꢀꢓꢇꢀꢈꢘ
ꢀꢀꢀꢓꢈꢀꢂꢊꢀꢗꢀꢆꢇꢉꢀꢈꢘ
ꢀꢀꢀ-ꢈꢀ.&'/ꢖꢑꢀꢔꢕꢖꢒꢑ
ꢀꢁ
ꢀꢁ
ꢂ
ꢁ
ꢆ
ꢅꢃ
ꢃꢁ
ꢋꢃ
ꢀꢁꢁ
ꢀꢅꢃ
ꢀꢃꢁ
ꢀꢁ
ꢀꢁ
ꢀꢁ
ꢀ
ꢘ ꢁꢂꢈꢅ!ꢊꢂꢘꢊ"ꢚꢊꢄꢅꢋꢉꢄꢊꢂꢌ
ꢎ
ꢏ
ꢁꢂꢃꢄꢅꢆꢇꢐꢑꢒꢉꢄꢓꢊꢂꢏꢒꢔꢋꢅꢕꢊꢂꢌꢏꢎ
ꢄ
ꢀꢁ
ꢀꢁꢂꢃꢄꢅꢆ(ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆ"ꢊ&ꢅꢆꢔꢋꢅꢄꢊꢍꢁꢎꢂꢆ+ꢄꢅꢊ
ꢀꢁꢂꢃꢄꢅꢆ',ꢈꢆ)ꢊ*ꢁ$ꢃ$ꢆꢚꢄꢊꢁꢎꢆꢉꢃꢄꢄꢅꢎꢍ
ꢙꢐꢈꢆꢆꢉꢊꢐꢅꢆ#ꢅ$ꢋꢅꢄꢊꢍꢃꢄꢅ
ꢀ
ꢕ ꢋ ꢀ ꢁꢇ
ꢀ ꢁ ꢂ
ꢀ
ꢀꢁ ꢂ ꢃꢄ ꢅ ꢀꢆ
ꢀ ꢁꢂ
ꢂ
ꢀꢀꢀꢇ ꢈꢀꢖ ꢊ ꢂꢗꢃꢘ ꢀꢊ ꢀꢌ ꢈꢌ ꢙ ꢀ ꢚꢛ ꢀꢜ ꢝ ꢞ ꢈ
ꢀ
ꢀꢀꢀꢌ ꢈꢀ ꢏ ꢃ! ꢀ" ꢝ # ꢃꢂ $%ꢀ ꢊ ꢃꢋ ꢚꢃꢌ
ꢀ ꢁꢅ
ꢀꢀꢀ& ꢈꢀꢑ ꢊ ꢍ ꢀ'ꢀꢑ ꢂ ꢀꢊ ꢀꢎ ꢃ ꢀ( ꢀꢖ ꢊ ꢂꢗꢃꢘ
ꢀ
ꢍ
ꢀ ꢁꢀ ꢇ
"
ꢀ ꢁ ꢀꢁ
ꢀꢅ
ꢀ ꢁꢀ ꢂ
ꢀꢄ
ꢀ ꢁꢀ ꢅ
ꢀꢆ
ꢍ ꢎꢏ ꢐ ꢑꢒ ꢊꢓ ꢔ ꢑꢍ ꢒ
ꢀ ꢁ ꢀꢃ
ꢀ ꢁ ꢀꢄ
ꢀ ꢁ ꢀꢅ
ꢀ ꢁ ꢀꢆ
ꢀ ꢁ ꢀꢁ
ꢀ ꢁ ꢂ
ꢀ ꢁ ꢁ
ꢋ
ꢁꢂꢑ ꢜ ꢉ ꢅ ꢄꢊ ꢂꢝ ꢅ ꢞ ꢊ ꢂ ꢉ ꢔ! ꢊ ꢂꢃ ꢉ ꢄꢅ ꢋꢆꢒ ꢇ ꢂꢌ! ꢊ ꢓ ꢎ
ꢃ
ꢀꢁꢂꢃꢄꢅꢆ''ꢈꢆ#ꢄꢊꢎꢐꢁꢅꢎꢍꢆ#ꢏꢅꢄ$ꢊꢜꢆꢖꢅꢐꢋꢘꢎꢐꢅꢆꢉꢃꢄꢙꢅ
www.onsemi.com
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
7
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM_F080
Figure 17. 3LD, TO-252, Jedec TO-252 VAR. AB, Surface Mount
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
8
Mechanical Dimensions
TO-251 3L (IPAK)
Figure 18. TO251 (IPAK) Molded 3 Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号:
FQE10N20CTU
Power Field-Effect Transistor, 4A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-126, 3 PIN
FAIRCHILD
FQG4904TU
Power Field-Effect Transistor, 0.46A I(D), 400V, 3ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明