FQP27P06 [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-60 V，-27 A，70 mΩ，TO-220;
| 型号： | FQP27P06 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-60 V，-27 A，70 mΩ，TO-220 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQP27P06
P-Channel QFET MOSFET
- 60 V, - 27 A, 70 mΩ
®
Features
•
- 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
•
•
•
Low Gate Charge (Typ. 33 nC)
Low Crss (Typ. 120 pF)
100% Avalanche Tested
175C Maximum Junction Temperature Rating
S
●
●
G
G
▶
▲
D
TO-220
S
●
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
D
Symbol
VDSS
Parameter
FQP27P06
-60
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
-27
A
-19.1
-108
25
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
560
mJ
A
-27
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
12
mJ
V/ns
W
dv/dt
PD
-7.0
120
- Derate above 25°C
Operating and Storage Temperature Range
0.8
W/°C
°C
TJ, TSTG
TL
-55 to +175
Maximum lead temperature for soldering purposes,
300
°C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
FQP27P06
1.25
Unit
°C/W
°C/W
°C/W
RJC
RCS
RJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
0.5
62.5
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQP27P06/D
Elerical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = -250 A
Drain-Source Breakdown Voltage
-60
--
--
--
--
V
BVDSS
Breakdown Voltage Temperature
ID = -250 A, Referenced to 25°C
-0.06
V/°C
/
TJ Coefficient
IDSS
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
--
--
--
--
--
--
--
--
-1
A
A
nA
nA
Zero Gate Voltage Drain Current
-10
IGSSF
IGSSR
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
VGS = 25 V, VDS = 0 V
On Characteristics
VGS(th)
VDS = VGS, ID = -250 A
Gate Threshold Voltage
-2.0
--
--
-4.0
0.07
--
V
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -13.5 A
0.055
12.4
gFS
VDS = -30 V, ID = -13.5 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1100
510
120
1400
660
pF
pF
pF
V
DS = -25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
155
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
18
185
30
45
380
70
190
43
--
ns
ns
V
DD = -30 V, ID = -13.5 A,
RG = 25
ns
(Note 4)
(Note 4)
90
ns
Qg
33
nC
nC
nC
V
DS = -48 V, ID = -27 A,
GS = -10 V
Qgs
Qgd
6.8
18
V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-27
-108
-4.0
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = -27 A,
105
0.41
ns
C
dIF / dt = 100 A/s
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, I = -27A, V = -25V, R = 25 Starting T = 25°C
AS
DD
G
J
3. I ≤ -27A, di/dt ≤ 300A/s, V
≤ BV Starting T = 25°C
4. Essentially independent of operating temperature
SD
DD
DSS, J
www.onsemi.com
2
Typical Characteristics
102
101
100
102
VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
101
Bottom: - 4.5 V
175℃
25℃
-55℃
※ Notes :
1. VDS = -30V
2. 250μs Pulse Test
100
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
-1
10
100
101
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
0.24
0.20
0.16
0.12
0.08
0.04
0.00
VGS = - 10V
VGS = - 20V
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
-ID , Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
3000
2500
2000
1500
1000
500
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
10
8
VDS = -30V
VDS = -48V
Coss
C
iss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※ Note : ID = -27 A
0
10
0
-1
100
101
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
100 s
1 ms
10 ms
101
100
DC
※ Notes :
1. TC = 25 o
C
2. TJ = 175 o
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
:
=
1 .2 5 ℃ /W M a x.
0 .2
0 .1
3 . T JM
-
T C
=
P D M
*
Z θ JC(t)
1 0 -1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
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5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
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6
Package Dimensions
TO-220
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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