FQP44N10 [ONSEMI]
N 沟道 QFET® MOSFET 100V，43.5A，39mΩ;
| 型号： | FQP44N10 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 100V，43.5A，39mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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November 2013
FQP44N10
®
N-Channel QFET MOSFET
100 V, 43.5 A, 39 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
•
43.5 A, 100 V, RDS(on) = 39 mΩ (Max.) @VGS = 10 V,
D = 21.75 A
I
•
•
•
•
Low Gate Charge (Typ. 48 nC)
Low Crss (Typ. 85 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
D
G
G
D
S
TO-220
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQP44N10
100
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
43.5
A
30.8
A
IDM
(Note 1)
Drain Current
174
A
VGSS
EAS
IAR
Gate-Source Voltage
25
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
530
mJ
A
43.5
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
14.6
mJ
V/ns
W
dv/dt
PD
6.0
146
- Derate above 25°C
0.97
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
-55 to +175
300
°C
Thermal Characteristics
Symbol
Parameter
FQP44N10
1.03
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
62.5
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
1
Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQP44N10
FQP44N10
TO-220
Tube
N/A
N/A
50 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
Drain-Source Breakdown Voltage
100
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature Coefficient
0.1
V/°C
/
ΔTJ
IDSS
--
--
--
--
--
--
--
--
1
μA
μA
nA
Zero Gate Voltage Drain Current
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
nA
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
0.039
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 21.75 A
0.03
30
gFS
VDS = 40 V, ID = 21.75 A
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1400
425
85
1800
550
110
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
19
190
90
45
390
190
210
62
ns
ns
VDD = 50 V, ID = 43.5 A,
RG = 25 Ω
ns
100
48
ns
Qg
nC
nC
nC
V
DS = 80 V, ID = 43.5 A,
Qgs
Qgd
9.0
24
--
VGS = 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
43.5
174
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 43.5 A
GS = 0 V, IS = 43.5 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
98
360
ns
nC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 0.42 mH, I = 43.5 A, V = 25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 43.5 A, di/dt ≤ 300 A/μs, V
≤ BV starting T = 25°C.
4. Essentially independent of operating temperature.
SD
DD
DSS, J
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
2
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
102
101
100
10-1
102
101
100
175℃
25℃
Bottom : 4.5 V
-55℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
100
101
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
102
101
100
10-1
VGS = 10V
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
175℃
25℃
※ Note : T = 25℃
J
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
30
60
90
120
150
180
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 50V
VDS = 80V
C
iss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
oss
6
4
C
rss
2
※ Note : ID = 43.5A
0
10
0
-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※Notes :
1. VGS = 0 V
2. ID = 250 μA
※ Notes :
1. VGS = 10 V
2. ID = 21.75 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
50
40
30
20
10
0
103
Operation in This Area
is Limited by R DS(on)
102
101
100
100 μs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
10
100
101
102
25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ JC(t)
:
0 .2
= 1 .0 3 ℃ /W M a x.
2 . D u ty F a c to r, D = t1 /t2
0 .1
1 0 -1
3 . T JM
-
T C
=
P D
* Z θ JC(t)
M
0 .0 5
PDM
0 .0 2
0 .0 1
t1
t2
sin g le p u lse
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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®
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Saving our world, 1mW/W/kW at a time™
SignalWise™
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ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
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®
®
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®
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UniFET™
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XS™
®
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
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®
®
SupreMOS
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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