FQP6N40C [ONSEMI]
功率 MOSFET，N 沟道，QFET®，400 V，6 A，1.0 Ω，TO-220;
| 型号： | FQP6N40C |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，400 V，6 A，1.0 Ω，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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December 2013
FQP6N40C
N-Channel QFET® MOSFET
400 V, 6.0 A, 1.0 Ω
Description
Features
• 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
ID = 3 A
•
•
•
Low Gate Charge (Typ. 16 nC)
Low Crss (Typ. 15 pF)
100% Avalanche Tested
D
G
G
D
S
TO-220
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Unit
V
FQP6N40C
V
I
Drain-Source Voltage
400
DSS
- Continuous (T = 25°C)
Drain Current
6
3.6
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
24
A
DM
V
E
I
Gate-Source Voltage
± 30
270
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
6
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
7.3
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)
73
D
C
- Derate above 25°C
0.58
-55 to +150
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
J
STG
T
300
°C
L
Thermal Characteristics
ꢀꢁꢂꢃꢄꢅ
ꢆꢇꢈꢇꢂꢉꢊꢉꢈ
FQP6N40C
1.71
ꢋꢌꢍꢊ
6ꢀꢀ?
6ꢀꢀ?
+
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
θꢀꢁ
θꢀꢂ
+
62.5
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Tube
N/A
N/A
Quantity
FQP6N40C
TO-220
FQP6N40C
50 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
400
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.54
V/°C
D
/ ∆T
J
I
V
V
V
V
= 400 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 320 V, T = 125°C
10
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
1
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 3A
0.83
4.7
D
g
= 40 V, I = 3A
Forward Transconductance
--
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
480
80
625
105
20
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
15
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
13
65
21
38
16
2.3
8.2
35
140
55
85
20
--
ns
ns
d(on)
V
= 200 V, I = 6A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 320 V, I = 6A,
DS
D
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6
24
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 6 A,
230
1.7
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 13.7 mH, I = 6 A, V = 50 V, R = 25 Ω, starting
T = 25°C .
AS
DD
G
J
3. I
≤
6 A, di/dt ≤ 200 A/µs, V ≤ BV
starting T = 25°C.
SD
DD
DSS, J
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
2
TTyyppiiccaall CChhaarraacctteerriissttiiccss
VGS
Top :
15.0V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
Bottom: 5.0V
150oC
100
25oC
-55oC
100
※
Notes :
※
Notes :
μ
-1
10
1. V = 40V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
DS μ
℃
-1
10
-1
10
100
101
2
4
8
10
6
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
VGS = 10V
0
10
VGS = 20V
※
Notes :
℃
150
℃
25
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 80V
Crss = C
gd
1000
800
600
400
200
0
VDS = 200V
VDS = 320V
C
iss
C
6
oss
4
※
Note ;
1. VGS = 0 V
2. f = 1MHz
C
rss
2
※
Note: ID = 6A
0
-1
100
101
0
5
10
15
20
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
www.fairchildsemi.com
3
(Continued)
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID= 250 μA
※
Notes :
1. VGS = 10 V
2. ID = 3 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
6
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
10 µs
101
100
100 µs
1 ms
10 ms
100 ms
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
10
0
1
10
2
10
3
10
25
50
75
100
125
150
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
1 00
D = 0 .5
0 .2
0 .1
※
N o tes
1 . Z θ JC (t)
2 . D uty F ac to r, D = t1/t2
3 . T JM T C P D Z θ JC (t)
:
℃
/W M a x.
=
1 .7 1
0 .0 5
1 0-1
-
=
*
M
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
t2
1 0-2
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
www.fairchildsemi.com
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
www.fairchildsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
7
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
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F-PFS™
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Sync-Lock™
®*
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PowerXS™
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QS™
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™
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®
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®
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and Better™
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Saving our world, 1mW/W/kW at a time™
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®
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Definition of Terms
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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