FQPF27P06 [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-60 V，-17 A，26 mΩ，TO-220F;
| 型号： | FQPF27P06 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-60 V，-17 A，26 mΩ，TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – P-Channel, QFET)
-60 V, -17 A, 70 mW
FQPF27P06
Description
This P−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, audio
amplifier, DC motor control, and variable switching power
applications.
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V
R
MAX
I MAX
D
DSS
DS(ON)
−60 V
70 mW @ 10 V
−17 A
S
Features
• −17 A, −60 V, R
= 70 mW (Max.) @ V = −10 V, I = −8.5 A
G
DS(on)
GS
D
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
P−Channel MOSFET
G
D
TO−220F
S
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
MARKING DIAGRAM
$Y&Z&3&K
FQPF
27P06
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Plant Code
= 2−Digits Lot Run Traceability Code
FQPF27P06 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FQPF27P06
TO−220−3
(Pb−Free)
1000 Units / Tube
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2021 − Rev. 3
FQPF27P06/D
FQPF27P06
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Symbol
Parameter
FQPF27P06
−60
Unit
V
V
DSS
Drain−Source Voltage
I
D
Drain Current
− Continuous (T = 25°C)
−17
A
C
− Continuous (T = 100°C)
−12
A
C
I
Drain Current (Note 1)
− Pulsed
−68
A
DM
V
GSS
Gate−Source Voltage
+ 25
V
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
560
mJ
A
AS
AR
I
−17
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
4.7
mJ
V/ns
W
AR
dv/dt
−7.0
P
Power Dissipation (T = 25°C)
47
D
C
− Derate above 25°C
0.31
W/°C
°C
°C
T , T
Operating and Storage Temperature Range
−55 to +175
300
J
STG
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.25 mH, I = −17 A, V = −25 V, R = 25 W, Starting T = 25°C
AS
DD
G
J
3. I ≤ −27 A, di/dt ≤ 300A/ms, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Characteristic
Typ
−
Max
3.19
62.5
Unit
°C/W
°C/W
R
R
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
q
JC
JA
−
q
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2
FQPF27P06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = −250 mA
−60
−−
−
−
V
DSS
GS
D
DBV
/ DT
Breakdown Voltage Temperature Coefficient
= −250 mA, Referenced to 25°C
−
−0.06
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
V
V
= −60 V, V = 0 V
−
−
−
−
−
−
−
−
−1
−10
−100
100
mA
mA
nA
nA
DSS
DS
GS
= −48 V, T = 150°C
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= −25 V, V = 0 V
DS
GSSF
I
= 25 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
)
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = −250 mA
−2.0
−
−
−4.0
0.07
−
V
W
S
GS(th
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= −10 V, I = −8.5 A
0.055
12
D
g
FS
= −30 V, I = −8.5 A (Note 4)
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −25 V, V = 0 V, f = 1.0 MHz
−
−
−
1100
510
120
1400
660
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
155
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= −30 V, I = −13.5 A, R = 25 W
−
−
−
−
−
−
−
18
185
30
45
380
70
190
43
−
ns
ns
d(on)
DD
D
G
(Note 4, 5)
t
r
t
ns
d(off)
t
f
90
ns
Q
V
DS
= −48 V, I = −27 A, V = −10 V
33
nC
nC
nC
g
D
GS
(Note 4, 5)
Q
6.8
18
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
−17
−68
−4.0
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = −17 A
−
V
GS
S
t
= 0 V, I = −27 A,
dI / dt = 100 A/ms (Note 4)
105
0.41
ns
mC
rr
GS
S
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse width ≤ 300 ms, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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3
FQPF27P06
TYPICAL CHARACTERISTICS
V
GS
Top:
− 15.0 V
− 10.0 V
− 8.0 V
− 7.0 V
− 6.0 V
− 5.5 V
− 5.0 V
1
10
1
0
175°C
25°C
10
Bottom: − 4.5 V
0
10
−55°C
* Notes:
1. 250 ms Pulse Test
* Notes:
10
1. V = −30 V
DS
2. T = 25°C
2. 250 ms Pulse Test
C
−1
10
−1
0
1
0
10
20
30
40
10
10
10
−V , Drain−Source Voltage (V)
DS
−V , Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.24
0.20
0.16
0.12
0.08
0.04
0.00
1
10
V
= −10 V
GS
175°C
V
GS
= −20 V
0
10
25°C
* Notes:
1. V = 0 V
GS
* Note: T = 25°C
2. 250 ms Pulse Test
J
−1
10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
−I , Drain Current (A)
D
−V , Source−Drain Voltage (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
12
3000
2500
2000
1500
1000
500
C
C
C
= C + C (C = shorted)
iss
gs
gd
ds
= C + C
oss
rss
ds
gd
C
oss
10
= C
gd
V
DS
= −30 V
* Notes:
8
6
4
2
0
V
DS
= −48 V
C
1. V = 0 V
iss
GS
2. f = 1 MHz
C
rss
* Note: I = −27 A
D
0
10
−1
0
1
0
5
10
15
20
25
30
35
10
10
V
DS
, Drain−Source Voltage (V)
Q , Total Gate Charge (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FQPF27P06
TYPICAL CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
* Notes:
1. V = 0 V
* Notes:
1. V = −10 V
0.5
GS
GS
2. I = 250 mA
2. I = −13.5 A
D
D
0.0
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
18
15
12
9
Operation in This Area
is Limited by R
2
DS(on)
10
1 ms
10 ms
100 ms
DC
1
0
10
6
10
* Notes :
1. T = 25°C
2. T = 175°C
C
3
J
3. Single Pulse
0
0
0
1
2
10
10
10
25
50
75
100
125
150
175
−V , Drain−Source Voltage (V)
DS
T , Case Temperature (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
D = 0.5
0
10
0.2
* Notes:
0.1
1. Z
(t) = 3.19°C/W Max.
q
JC
0.05
2. Duty Factor, D = t / t
1
2
3. T − T = P
x Z
(t)
q
JM
C
DM
JC
−1
0.02
10
P
DM
0.01
t
1
single pulse
t
2
−2
10
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t , Square Wave Pulse Duration (s)
1
Figure 11. Transient Thermal Response Curve
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5
FQPF27P06
VGS
Same Type
as DUT
Qg
50 kW
200 nF
12 V
−10 V
300 nF
Qgs
Qgd
VDS
VGS
DUT
−3 mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
ton
toff
VDS
td(on)
VGS
td(off)
VDD
t
t
VGS
r
f
RG
10%
DUT
−10 V
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
2
2
EAS
+
LIAS
L
BVDSS * VDD
VDS
tp
Time
ID
VDD
VDS (t)
RG
VDD
ID (t)
DUT
−10 V
IAS
tp
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FQPF27P06
+
VDS
_
DUT
ISD
L
Driver
RG
Compliment of DUT
VDD
(N−Channel)
VGS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
VGS
Gate Pulse Period
10 V
(Driver)
Body Diode Reverse Current
IRM
ISD
(DUT)
di/dt
IFM, Body Diode Forward Current
VSD
VDS
(DUT)
Body Diode
Forward Voltage Drop
VDD
Body Diode Recoverydv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
ISSUE B
DATE 19 JAN 2021
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67439E
TO−220 FULLPACK, 3−LEAD / TO−220F−3SG
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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