FQPF8N90C [ONSEMI]
功率 MOSFET，N 沟道，QFET®，900 V，6.3 A，1.9 Ω，TO-220F;
| 型号： | FQPF8N90C |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，900 V，6.3 A，1.9 Ω，TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：1670K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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FQP8N90C / FQPF8N90C
N-Channel QFET® MOSFET
900 V, 6.3 A, 1.9 Ω
Description
Features
•
ID = 3.15 A
6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
•
•
Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
D
G
G
G
D
S
D
TO-220
TO-220F
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VDSS
Parameter
FQP8N90C
FQPF8N90C
Unit
V
Drain-Source Voltage
900
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
6.3
3.8
25
6.3 *
3.8 *
25 *
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
850
6.3
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
17.1
4.0
mJ
V/ns
W
dv/dt
PD
171
60
- Derate above 25°C
1.37
0.48
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
-55 to +150
300
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP8N90C
FQPF8N90C
Unit
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
0.73
0.5
2.08
--
θJC
θCS
62.5
62.5
θJA
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.5
Publication Order Number:
FQP8N90C / FQPF8N60C/D
1
Package Marking and Ordering Information
Part Number
FQP8N90C
FQPF8N90C
Top Mark
FQP8N90C
FQPF8N90C
Package
Packing Method Reel Size
Tape Width
Quantity
TO-220
N/A
N/A
N/A
50 units
Tube
Tube
N/A
50 units
TO-220F
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
VGS = 0 V, ID = 250 µA
Drain-Source Breakdown Voltage
900
--
--
--
--
V
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
0.95
V/°C
IDSS
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.15 A
VDS = 50 V, ID = 3.15 A
Gate Threshold Voltage
3.0
--
--
5.0
1.9
--
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
1.6
5.5
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1600
130
12
2080
170
15
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
40
110
70
70
35
10
14
90
230
150
150
45
ns
ns
V
DD = 450 V, ID = 8 A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 720 V, ID = 8 A,
GS = 10 V
Qgs
Qgd
--
V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6.3
25
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 6.3 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 8 A,
530
5.8
ns
µC
dIF / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 40 mH, I = 6.3 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
≤ 8 A, di/dt ≤ 200 A/µs , V ≤ BV
starting T = 25°C.
I
3.
SD
DD
DSS,
J
Essentially independent of operating temperature.
4.
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2
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
V
Top: 15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
101
101
Bottom: .5V
150oC
100
-55oC
100
25oC
∝Notes :
1. 250レs Pulse Test
2. TC = 25∩
∝Notes :
1. VDS = 50V
2. 250レs Pulse Test
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
101
VGS = 10V
VGS = 20V
100
150∩
25∩
∝Notes :
1. VGS = 0V
2. 250レs Pulse Test
∝Note: T = 25∩
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
gd
rss = Cds
VDS = 180V
gd
2500
2000
1500
1000
500
10
8
VDS = 450V
VDS = 720V
C
iss
6
C
oss
∝Notes :
1. VGS = 0 V
2. f =1MHz
4
C
2
rss
∝Note: ID = 8A
0
0
10
-1
100
101
0
5
10
15
20
25
30
35
40
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
∝Notes:
0.9
1. V = 0 V
2. IDG=S 250 レA
∝Notes:
1. V = 10 V
2. IDG=S 3.15 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
102
102
101
100
100 µs
1 ms
10 ms
101
100
100 µs
1 ms
10 ms
DC
100 ms
DC
∝ Notes :
1. TC = 25 o
2. TJ = 150 o
-1
10
∝ Notes :
-1
10
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
C
C
3. Single Pulse
-2
-2
10
10
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N90C
Figure 9-2. Maximum Safe Operating Area
for FQPF8N90C
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [∩]
Figure 10. Maximum Drain Current
vs Case Temperature
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4
(Continued)
Typical Characteristics
100
D = 0.5
0.2
∝
N otes
1.
:
10-1
0.1
Z
(t) = 0.73 ∩ /W M ax.
2. DヨuJtCy Factor, D =t1/t2
3. TJM
-
TC
=
P DM
*
Zヨ JC(t)
0 .0 5
PDM
0 .02
0 .01
t1
t2
sing le pu lse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11-1. Transient Thermal Response Curve for FQP8N90C
10 0
D = 0 .5
0 .2
∝
N otes
1.
:
Z
(t) = 2.08 ∩ /W M ax.
2. DヨuJtCy Factor, D =t1/t2
0 .1
3. TJM
- TC = P DM * Zヨ JC(t)
0 .0 5
10 -1
PDM
0 .0 2
0 .0 1
t1
t2
s in g le p u se
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t1, S quare W ave P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF8N90C
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5
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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