FQPF9P25YDTU [ONSEMI]
P 沟道，QFET® MOSFET，-250 V，-6 A，620 mΩ;
| 型号： | FQPF9P25YDTU |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，QFET® MOSFET，-250 V，-6 A，620 mΩ |
| 文件： | 总9页 (文件大小：3619K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2014
FQPF9P25YDTU
P-Channel QFET® MOSFET
-250 V, -6 A, 620 mΩ
Description
Features
•
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
-6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V,
ID = -3 A
•
•
•
Low Gate Charge (Typ. 29 nC)
Low Crss (Typ. 27 pF)
100% Avalanche Tested
S
G
D
G
TO-220F
S
Y-formed
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQPF9P25YDTU
Unit
V
V
I
Drain-Source Voltage
-250
-6.0
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
-3.9
A
C
I
(Note 1)
Drain Current
- Pulsed
-24
A
DM
V
E
I
Gate-Source Voltage
± 30
650
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
-6.0
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.0
mJ
V/ns
W
AR
dv/dt
-5.5
P
Power Dissipation (T = 25°C)
50
D
C
- Derate above 25°C
0.4
W/°C
°C
T , T
Operating and Storage Temperature Range
-55 to +150
J
STG
Maximum lead temperature for soldering,
1/8” from case for 5 seconds.
T
300
°C
L
Thermal Characteristics
FQPF9P25YDTU
ꢀꢁꢂꢃꢄꢅ
θꢀꢁ
ꢆꢇꢈꢇꢂꢉꢊꢉꢈ
ꢋꢌꢍꢊ
6ꢀꢀ?
6ꢀꢀ?
+
+
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
2.5
-' &
θꢀꢂ
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
TO-220F
(Y-formed)
FQPF9P25YDTU
FQPF9P25
Tube
N/A
50 units
N/A
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-250
--
--
--
--
V
DSS
∆BV
/ ∆T
Breakdown Voltage Temperature
Coefficient
DSS
I
= -250 µA, Referenced to 25°C
-0.2
V/°C
D
J
I
V
V
V
V
= -250 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -200 V, T = 125°C
-10
DS
GS
GS
C
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
I
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-3.0
--
--
-5.0
0.62
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -3.0 A
0.48
4.8
D
g
= -40 V, I = -3.0 A
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
910
170
27
1180
220
35
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
20
150
45
50
310
100
140
38
ns
ns
d(on)
V
= -125 V, I = -9.4 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
65
ns
Q
Q
Q
29
nC
nC
nC
g
V
V
= -200 V, I = -9.4 A,
DS
D
7.6
14
--
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-6.0
-24
-5.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -6.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -9.4 A,
190
1.45
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 28.9 mH, I = -6.0 A, V = -50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3.
I
≤ -9.4 A, di/dt ≤ 300 A/µs , V ≤ BV starting T = 25°C.
SD
DD
DSS, J
Essentially independent of operating temperature.
4.
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
2
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
101
101
Bottom : -5.5 V
℃
150
100
100
℃
25
※
Notes :
※
Notes :
μ
2. TC = 25
1. 250 s Pulse Test
1. VDS = -50V
℃
-55
℃
μ
2. 250 s Pulse Test
-1
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
101
VGS = - 10V
VGS = - 20V
100
※
Notes :
℃
150
℃
25
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
2400
2000
1600
1200
800
400
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
VDS = -50V
VDS = -125V
VDS = -200V
gd
Crss = Cgd
※
Notes :
C
iss
1. VGS = 0 V
2. f = 1 MHz
Coss
6
4
C
rss
2
※
Note : ID = -9.4 A
30
0
-1
10
100
101
0
5
10
15
20
25
35
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
3
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
※Notes :
1. VGS = 0 V
2. ID = -250 μA
※
Notes :
1. VGS = -10 V
2. ID = -4.7 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
6
5
4
3
2
1
0
102
Operation in This Area
is Limited by R DS(on)
100 µs
101
100
1 ms
10 ms
100 ms
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x.
=
2 .5
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
0 .0 5
1 0-1
0 .0 2
0 .0 1
PDM
t1
t2
s in g le p u ls e
1 0-4 1 0 -3
1 0-2
1 0 -5
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
VGS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
VGS
DUT
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
FM , Body Diode Forward Current
VSD
I
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FQPF9P25YDTU Rev. C0
6
10.36
9.96
2.66
2.42
A
B
B
3.28
3.08
3.40
3.20
7.00
0.70
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
R0.30
2.96
2.56
3
1
R0.30
1.47
1.24
10.45
9.45
10.00
9.00
B
B
2.14
0.90
0.70
M
0.50
A
0.60
0.45
B
B
4.00 MIN
2.54
2.54
6.00
4.00
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220Q03REV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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