FR014H5JZ [ONSEMI]
高压侧反向偏置/反向极性保护器，带集成式过电压瞬变抑制;
| 型号： | FR014H5JZ |
| 厂家： | 
ONSEMI |
| 描述： | 高压侧反向偏置/反向极性保护器，带集成式过电压瞬变抑制 高压 光电二极管 |
| 文件： | 总13页 (文件大小：575K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
High-Side Reverse Bias /
Reverse Polarity Protector
with Integrated Over Voltage
Transient Suppression
Pin 1
NEG
CTL
POS
Top
Bottom
WDFN8 3.3 x 3.3, 0.65P
FR014H5JZ
(MLP 3.3 x 3.3)
CASE 511DR
Description
Reverse bias is an increasingly common fault event that may be
generated by user error, improperly installed batteries, automotive
environments, erroneous connections to third−party chargers, negative
“hot plug” transients, inductive transients, and readily available
negatively biased rouge USB chargers.
MARKING DIAGRAM
$Y&Z&2&K
14H
onsemi circuit protection is proud to offer a new type of reverse bias
protection devices. The FR devices are low resistance, series switches
that, in the event of a reverse bias condition, shut off power and block
the negative voltage to help protect downstream circuits.
The FR devices are optimized for the application to offer best in
class reverse bias protection and voltage capabilities while minimizing
size, series voltage drop, and normal operating power consumption.
In the event of a reverse bias application, FR014H5JZ devices
effectively provide a full voltage block and can easily protect −0.3 V
rated silicon.
$Y = Logo
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
14H = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
From a power perspective, in normal bias, a 14 mW FR device in a
1.5 A application will generate only 21 mV of voltage drop or 32 mW
of power loss. In reverse bias, FR devices dissipate less then 20 mW in
a 16 V reverse bias event. This type of performance is not possible
with a diode solution.
Benefits extend beyond the device. Due to low power dissipation,
not only is the device small, but heat sinking requirements and cost can
be minimized as well.
Features
• Up to −30 V Reverse−Bias Protection
• Nano Seconds of Reverse−Bias Blocking Response Time
• +32 V 24−Hour “Withstand” Rating
• 14 mW Typical Series Resistance at 5 V
• Integrated TVS Over Voltage Suppression
• MLP 3.3 x 3.3 Package Size
• USB Tested and Compatible
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications (Continued)
Applications
• Any DC Barrel Jack Powered Device
• USB 1.0, 2.0 and 3.0 Devices
• USB Charging
• Mobile Devices
• Mobile Medical
• POS Systems
• Toys
• Any DC Devices subject to Negative Hot
Plug or Inductive Transients
• Automotive Peripherals
• Any DC Barrel Jack Powered Device
• Any DC Devices subject to Negative Hot
Plug or Inductive Transients
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2022 − Rev. 3
FR014H5JZ/D
FR014H5JZ
DIAGRAMS
OV Bypass
Protection
FR014H5JZ
POS NEG
I
IN
Inrush Reducer
Startup Diode
POS
NEG
CTL
Power Source
USB Device
Circuit
V
IN
(USB Connector)
Power
Switch
Protected USB Device Circuit
CTL
Figure 1. Block Diagram
Figure 2. Typical Schematic
PIN CONFIGURATION
Pin 1
NEG
CTL
POS
Top
Bottom
Figure 3. Pin Assignments
PIN DEFINITIONS
Name
POS
CTL
Pin
5, 6, 7, 8
4
Description
The positive terminal of the power source. Current flows into this pin during normal operation.
The control pin of the device. A negative voltage to the POS pin turns the switch on and a positive voltage
turns the switch to a high−impedance state.
NEG
1, 2, 3
The positive terminal of the load circuit to be protected. Current flows out of this pin during normal operation.
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2
FR014H5JZ
ABSOLUTE MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted)
A
Symbol
V+
Parameter
Value
Unit
Steady−State Normal Operating Voltage between POS and CTL Pins (V = V+
,
+25
V
MAX_OP
IN
MAX_OP
I
IN
= 1.5 A, Switch On)
V+
24−Hour Normal Operating Voltage Withstand Capability between POS and CTL Pins
(V = V+ , I = 1.5 A, Switch On) (Note 1)
+32
24
IN
24 IN
V−
Steady−State Reverse Bias Standoff Voltage between POS and CTL Pins (V = V−
)
−30
8
MAX_OP
IN
MAX_OP
I
IN
Input Current
V
IN
= 5 V, Continuous (Note 2) (See Figure 4)
A
T
P
Operating Junction Temperature
Power Dissipation
150
36
2.3
2
°C
W
J
T
= 25°C
D
C
T = 25°C (Note 2) (See Figure 4)
A
I
Steady−State Diode Continuous Forward Current from POS to NEG (Note 2) (See Figure 4)
Pulsed Diode Forward Current from POS to NEG (300 ms Pulse) (Note 2) (See Figure 5)
A
DIODE_CONT
I
450
8
DIODE_PULSE
ESD
Electrostatic
Discharge Capability
Human Body Model, JESD22−A114
Charged Device Model, JESD22−C101
kV
2
System Model,
IEC61000−4−2
NEG is Shorted to CTL
and Connected to GND
Contact
Air
8
15
3
No External Connection Contact
between NEG and CTL
Air
4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The V
rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on qualification devices, where
+24
the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is intended to indicate the device’s ability to withstand
transient events that exceed the recommended operating voltage rating. Specification is based on qualification devices tested using
accelerated destructive testing at higher voltages, as well as production pulse testing at the V
level. Production device field life results
+24
may vary. Results are also subject to variation based on implementation, environmental considerations, and circuit dynamics. Systems
should never be designed with the intent to normally operate at V levels. Contact onsemi for additional information.
+24
2. The device power dissipation and thermal resistance (R ) are characterized with device mounted on the following FR4 printed circuit boards,
q
as shown in Figure 4 and Figure 5.
Figure 4. 1 Square Inch of 2−ounce Copper
Figure 5. Minimum Pads of 2−ounce Copper
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Thermal Resistance, Junction to Case
3.4
50
°C/W
R
q
JC
JA
R
Thermal Resistance, Junction to Ambient (Note 2) (See Figure 4)
q
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3
FR014H5JZ
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
POSITIVE BIAS CHARACTERISTICS
R
Device Resistance, Switch On
V
V
V
V
= +4 V, I = 1.5 A
−
−
18
14
20
11
23
19
−
mW
ON
ON
IN
IN
IN
IN
IN
= +5 V, I = 1.5 A
IN
= +5 V, I = 1.5 A, T = 125°C
−
IN
J
= +12 V, I = 1.5 A
−
14
3.0
IN
V
Input Voltage, V , at which Voltage at POS,
I
IN
= 100 mA, V
− V
= 50 mV,
2.0
2.4
V
IN
POS
NEG
V , Reaches a Certain Level at Given
POS
V
CTL
= 0 V
Current
DV / DT
Temperature Coefficient of V
Diode Forward Voltage
−
−3.52
0.63
−
mV/°C
ON
J
ON
V
F
V
CTL
= V , I = 0.1 A,
NEG DIODE
0.57
0.70
V
Pulse width < 300 ms
I
Bias Current Flowing into POS Pin During
Normal Bias Operation
V
POS
= 5 V, V = 0 V, No Load
−
30
−
nA
BIAS
CTL
NEGATIVE BIAS CHARACTERISTICS
V−
Reverse Bias Breakdown Voltage
I
= −250 mA, V
= V
NEG
= 0 V
= 0 V
−
−
−
−30
−
V
MAX_OP
IN
CTL
DV−
/
Reverse Bias Breakdown Voltage
Temperature Coefficient
22.5
mV/°C
MAX_OP
DT
J
I−
Leakage Current from NEG to POS in
Reverse−Bias Condition
V
V
= −20 V, V
= V
NEG
−
−
1
−
−
mA
POS
CTL
t
Time to Respond to Negative Bias Condition
= 5 V, V
= 0 V,
50
ns
RN
CTL
POS
C
LOAD
= 10 mF, Reverse Bias
Startup Inrush Current = 0.2 A
INTEGRATED TVS PERFORMANCE
Breakdown Voltage @ I
V
Z
I = 1 mA, 300 ms Pulse
28.5
−
30
1.5
−1.5
−
31.2
10
V
T
T
I
R
Leakage Current from NEG to CTL
V
NEG
V
NEG
V
NEG
V
NEG
V
NEG
V
NEG
= +25 V, V
= −25 V, V
= 0 V
= 0 V
mA
CTL
CTL
−
−10
0.8
−0.9
−
I
Max Pulse Current from IEC61000−4−5
NEG to CTL
> V
< V
> V
< V
−
A
V
PPM
CTL
CTL
CTL
CTL
8x20 ms Pulse
−
−
V
C
Clamping Voltage form
−
34
NEG to CTL at I
PPM
−
−34
−
DYNAMIC CHARACTERISTICS
C
Input Capacitance between POS and CTL
Switch Capacitance between POS and NEG
Output Capacitance between NEG and CTL
Control Internal Resistance
V
= −5 V, V
= V = 0 V,
NEG
−
−
−
−
2440
564
−
−
−
−
pF
I
IN
CTL
f = 1 MHz
C
S
O
C
C
R
2526
3.6
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FR014H5JZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise specified.)
J
24
21
18
15
12
9
3.6
3.4
Input Voltage V = 4 V
IN
3.2
3.0
2.8
2.6
2.4
2.2
5 V
9 V
12 V
16 V
6
3
0
0
2
4
6
8
10 12 14 16 18 20
0.0
0.3
0.6
I , INPUT CURRENT (A)
IN
0.9
1.2
1.5
1.8
2.1
I
IN
, INPUT CURRENT (A)
Figure 6. Switch On Resistance vs. Switch Current
Figure 7. Minimum Input Voltage to Turn On
Switch vs. Current at 50 mV Switch Voltage Drop
1.0
24
I
IN
= 0.1 A
T = 25°C
J
I
IN
= 0.1 A
21
18
15
12
9
0.8
0.6
0.4
0.2
0.0
0.9 A
V
= 5 V
IN
1. 5 A
12 V
6
3
0
−75 −50 −25
0
25 50 75 100 125 150
1
3
5
7
9
11 13 15 17 19 21
V
IN
, INPUT VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Effective Switch Resistance RSW vs.
Input Voltage VIN
Figure 9. Switch On Resistance vs. Junction
Temperature at 0.1 A
24
1000
100
10
I
IN
= 1.5 A
21
18
15
12
9
V
= 5 V
IN
12 V
1
6
3
0.1
0
1E−4 1E−3 0.01 0.1
1
10
100 1000
−75 −50 −25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
t, PULSE WIDTH (s)
Figure 10. Switch On Resistance vs. Junction
Temperature at 1.5 A
Figure 11. Single−Pulse Maximum Power vs. Time
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5
FR014H5JZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise specified.) (Continued)
J
100
V
NEG
= V
= 0 V
CTL
10
1
T = 125°C
J
25°C
0.1
−55°C
0.01
1E−3
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , STARTUP DIODE FORWARD VOLTAGE (V)
F
Figure 12. Startup Diode Current vs. Forward Voltage
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6
FR014H5JZ
APPLICATION TEST CONFIGURATIONS
FR014H5JZ
POS
NEG
I
IN
CTL
Power Source
(USB Connector)
USB Device Circuit
V
IN
Protected USB Device Circuit
Figure 13. Typical Application Circuit for USB Applications
FR014H5JZ
Q1−1
5, 6
FDS8858CZ
D2
POS
NEG
3 S2
iIN
CTL
4
G2
R1
Q1−2
FDS8858CZ
C1
7, 8 D1
R3
C2
2 G1
1
S1
R2
Figure 14. Startup Test Circuit – Normal Bias with FR014H5JZ
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7
FR014H5JZ
APPLICATION TEST CONFIGURATIONS (Continued)
FR014H5JZ
POS
NEG
iIN
CTL
R2
1
S1
2 G1
Q1−2
FDS8858CZ
7, 8 D1
C1
R3
C2
R1
4
G2
3 S2
5, 6 D2
Q1−1
FDS8858CZ
Figure 15. Startup Test Circuit – Reverse Bias with FR014H5JZ
Q1−1
FDS8858CZ
5, 6 D2
3 S2
iIN
4
G2
R1
Q1−2
FDS8858CZ
C1
7, 8 D1
R3
C2
2 G1
1
S1
R2
Figure 16. Startup Test Circuit – without FR014H5JZ
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8
FR014H5JZ
TYPICAL APPLICATION WAVEFORMS (Typical USB3.0 conditions)
' V , 2 V/div. The input voltage between POS and CTL
IN
' V
, 2 V/div. The output voltage between NEG and CTL
' V , 1 V/div. The startup diode voltage between POS and NEG
OUT
D
' i , 5 A/div. The input current flowing from POS to NEG
IN
Time: 5 ms/div
Figure 17. Normal Bias Startup Waveform, DC Power Source = 5 V, C1 = 100 mF, C2 = 10 mF, R1 = R2 = 10 kW, R3 = 27 W
' V , 2 V/div. The input voltage between POS and CTL
IN
' V , 2 V/div. The startup diode voltage between POS and NEG
D
' V T, 1 V/div. The output voltage between NEG and CTL
OU
' i , 0.1 A/div. The input current flowing into POS
IN
Time: 100 ns/div
Figure 18. Reverse Bias Startup Waveform, DC Power Source = 5 V, C1 = 100 mF, C2 = 10 mF, R1 = R2 = 10 kW,
R3 = 27 W
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9
FR014H5JZ
TYPICAL APPLICATION WAVEFORMS (Typical USB3.0 conditions)
' V , 2 V/div. The voltage applied on the load circuit
IN
' i , 2 A/div. The input current
IN
Time: 5 ms/div
Figure 19. Startup Waveform without FR014H5JZ, DC Power Source = 5 V, C1 = 100 mF, C2 = 10 mF, R1 = R2 = 10 kW,
R3 = 27 W
APPLICATION INFORMATION
Figure 17 shows the voltage and current waveforms when
a virtual USB3.0 device is connected to a 5 V source. A USB
application allows a maximum source output capacitance of
current waveforms when a virtual USB3.0 device is
reversely biased; the output voltage is near 0 and response
time is less than 50 ns.
C = 120 mF and a maximum device−side input capacitance
Figure 19 shows the voltage and current waveforms when
no reverse bias protection is implemented. In Figure 17,
while the reverse bias protector is present, the input voltage,
V , and the output voltage, V , are separated and look
1
of C = 10 mF plus a maximum load (minimum resistance)
2
of R = 27 W. C = 100 mF, C = 10 mF and R = 27 W were
3
1
2
3
used for testing.
IN
O
different. When this reverse bias protector is removed, V
When the DC power source is connected to the circuit
(refer to Figure 13), the built−in startup diode initially
conducts the current such that the USB device powers up.
Due to the initial diode voltage drop, the FR014H5JZ
effectively reduces the peak inrush current of a hot plug
event. Under these test conditions, the input inrush current
reaches about 6 A peak. While the current flows, the input
voltage increases. The speed of this input voltage increase
depends on the time constant formed by the load resistance
IN
and V merge, as shown in Figure 19 as V . This V is also
O
IN
IN
the voltage applied to the load circuit. It can be seen that,
with reverse bias protection, the voltage applied to the load
and the current flowing into the load look very much the
same as without reverse bias protection.
Benefits of Reverse Bias Protection
The most important benefit is to prevent accidently
reverse−biased voltage from damaging the USB load.
Another benefit is that the peak startup inrush current can be
reduced. How fast the input voltage rises, the input/output
capacitance, the input voltage, and how heavy the load is
determine how much the inrush current can be reduced. In
a 5 V USB application, for example, the inrush current can
be 5% − 20% less with different input voltage rising rate and
other factors. This can offer a system designer the option of
R and load capacitance C . The larger the time constant, the
3
2
slower the input voltage increase. As the input voltage
approaches a level equal to the protector’s turn−on voltage,
V
ON
, the protector turns on and operates in Low−Resistance
Mode as defined by V and operating current I .
IN
IN
In the event of a negative transient, or when the DC power
source is reversely connected to the circuit, the device
blocks the flow of current and holds off the voltage, thereby
protecting the USB device. Figure 18 shows the voltage and
increasing C while keeping “effective” USB device
2
capacitance down.
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10
FR014H5JZ
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Reel
Tape
Shipping
FR014H5JZ
14H
8−Lead, Molded Leadless Package (MLP),
Dual, 3.3 mm Square
13−inch
12 mm
3000 / Tape & Reel
(Pb−Free. Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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