FSA2466UMX [ONSEMI]

数据/音频低电压双 DPDT 模拟开关;
FSA2466UMX
型号: FSA2466UMX
厂家: ONSEMI    ONSEMI
描述:

数据/音频低电压双 DPDT 模拟开关

开关 PC 光电二极管 输出元件
文件: 总10页 (文件大小:411K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
DATA/AUDIO Low-Voltage  
Dual DPDT Analog Switch  
FSA2466  
UQFN16 1.8x2.6, 0.4P  
CASE 523BF  
Description  
The FSA2466 is a dual DoublePole, DoubleThrow (DPDT)  
analog switch. The FSA2466 operates from a single 1.65 V to 4.45 V  
supply and features an ultralow on resistance of 2 W at a +2.7 V  
MARKING DIAGRAM  
supply and T = 25°C. This device is fabricated with submicron  
A
CMOS technology to achieve fast switching speeds and is designed  
for breakbeforemake operation.  
FSA2466 features very low quiescent current even when the control  
KA&K  
&2&Z  
voltage is lower than the V supply. This allows mobile handset  
CC  
applications direct interface with the baseband processor  
generalpurpose I/Os.  
KA  
&K  
&2  
&Z  
= Specific Device Code  
= 2Digits Lot Run Traceability Code  
= 2Digit Date Code  
Features  
= Assembly Plant Code  
Switch Type  
DPDT (2x)  
Input Type  
Data / Audio Switch  
Input Signal Range  
0 to V  
CC  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
V
CC  
1.65 to 4.45 V  
2.5 W at 2.7 V  
0.8 W at 2.7 V  
8 kV HBM  
245 MHz  
R
R
ON  
FLAT  
ESD  
Bandwidth  
C
C
at 240 MHz  
16 pF  
ON  
at 240 MHz  
6.0 pF  
OFF  
Low I  
Features  
Package  
Top Mark  
CTT  
16Lead UMLP 1.80 x 2.60 x 0.55 mm, 0.40 mm pitch  
KA  
Ordering Information FSA2466UMX  
Applications  
MP3 Portable Media Players  
Cellular Phones, Smartphones  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2022 Rev. 3  
FSA2466/D  
FSA2466  
Figure 1. Typical Mobile Phone Application  
ORDERING INFORMATION  
Operating  
Temperature Range  
Part Number  
Top Mark  
KA  
Package  
Shipping  
5000 / Tape & Reel  
FSA2466UMX  
40 to 85°C  
16Lead, Quad, Ultrathin Molded Leadless  
Package (UMLP), 1.8 x 2.6 mm  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
2
FSA2466  
Pin Configuration  
1A  
16  
1B  
V
4B  
13  
1
CC  
0
15  
14  
12  
11  
10  
9
4A  
4B  
1B  
1
0
2
1
1S  
2S  
3
4
2B  
1
2A  
3B  
0
5
6
7
8
2B  
0
GND  
3B  
1
3A  
Figure 2. FSA2466UMX (Top View)  
PIN DESCRIPTIONS  
Pin #  
Name  
Type  
Description  
1B0  
1
I/O  
Data / Audio Port  
0
1
1B0 = 1A & 2B0 = 2A  
2
1S  
Input  
Control Input for Data & Common Ports 1 & 2  
1B1 = 1A & 2B1 = 2A  
3
4
5
6
7
8
9
2B1  
2A  
I/O  
I/O  
Data / Audio Port  
Data / Audio Common Port  
Data / Audio Port  
2B0  
GND  
3B1  
3A  
I/O  
GND  
I/O  
Data / Audio Port  
I/O  
Data / Audio Common Port  
Data / Audio Port  
3B0  
I/O  
0
1
3B0 = 3A & 4B0 = 4A  
10  
2S  
Input  
Control Input for Data & Common Ports 3 & 4  
3B1 = 3A & 4B1 = 4A  
4B1  
4A  
11  
12  
13  
14  
15  
16  
I/O  
I/O  
Data / Audio Port  
Data / Audio Common Port  
Data / Audio Port  
4B0  
VCC  
1B1  
1A  
I/O  
Supply  
I/O  
Voltage supply  
Data / Audio Port  
I/O  
Data / Audio Common Port  
www.onsemi.com  
3
FSA2466  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Min  
0.50  
0.5  
0.5  
50  
Max  
Unit  
V
V
Supply Voltage  
Switch Voltage  
Input Voltage  
5.25  
CC  
V
V
+ 0.3  
V
S
IN  
IK  
CC  
V
5.0  
V
I
Input Diode Current  
Switch Current  
mA  
mA  
mA  
°C  
°C  
°C  
kV  
I
350  
500  
+150  
+150  
+260  
8
SW  
SWPEAK  
I
Peak Switch Current (Pulsed at 1 ms Duration, <10% Duty Cycle)  
Storage Temperature Range  
T
STG  
65  
T
J
Junction Temperature  
T
L
Lead Temperature, Soldering 10 seconds  
ESD  
Human Body Model, JESD22A114  
I/O to GND  
Power to GND  
All Other Pins  
8
8
Charged Device Model, JEDEC: JESD22C101  
2
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
0
Max  
Unit  
V
V
CC  
Supply Voltage (Note 1)  
Control Input Voltage (Note 2)  
Switch Input Voltage  
4.45  
V
IN  
V
V
CC  
CC  
V
S
0
V
V
TA  
Operating Temperature  
40  
+85  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
1. For 4.45 V operation, SEL frequency (pins 1S & 2S) should not exceed 100 Hz and 100 ns edge rate.  
2. Unused inputs must be held HIGH or LOW. They may not float.  
www.onsemi.com  
4
 
FSA2466  
DC ELECTRICAL CHARACTERISTICS  
(Typical values are at T = 25°C unless otherwise specified.)  
A
T = +255C  
T = 40 to +855C  
A
A
Symbol  
Parameter  
Condition  
V
(V)  
Min.  
Typ.  
Max.  
Min.  
1.4  
1.3  
1.1  
0.9  
Max.  
Unit  
CC  
V
IH  
Input Voltage High  
V
4.30  
2.70 to 3.60  
2.30 to 2.70  
1.65 to 1.95  
4.30  
V
IL  
Input Voltage Low  
V
0.7  
0.5  
0.4  
2.70 to 3.60  
2.30 to 2.70  
1.65 to 1.95  
1.65 to 4.30  
1.95 to 4.30  
0.4  
0.5  
50  
I
V
= 0 V to V  
Control Input Leakage  
0.5  
50  
mA  
IN  
IN  
CC  
I
I
Off Leakage Current of  
Port nB0 and nB1  
10  
10  
10  
10  
nA  
NO(OFF)  
NC(OFF)  
nA=0.3 V, V 0.3V  
CC  
nB0 or nB1=0.3 V,  
V
CC  
0.3V or Floating  
I
On Leakage Current of  
Port A  
1.95 to 4.30  
50  
50  
nA  
A(ON)  
nA = 0.3 V, V 0.3V  
CC  
nB0 or nB1 = 0.3 V,  
V
CC  
0.3V or Floating  
R
Switch On Resistance  
(Note 3)  
I
I
=100 mA  
4.30  
2.70  
1.6  
2.0  
2.0  
2.5  
W
ON  
OUT  
=100 mA, nB0 or  
OUT  
nB1=0 V, 0.7 V, 1.2 V,  
2.30  
1.80  
2.2  
4.3  
2.7  
6.0  
V
CC  
I
=100mA, nB0 or  
OUT  
nB1=0.7 V  
DR  
On Resistance Matching  
Between Channels  
(Note 4)  
W
ON  
I
=100 mA, nB0 or  
2.70  
2.30  
0.04  
0.03  
0.20  
0.30  
OUT  
nB1=0.8 V  
I
=100 mA, nB0 or  
OUT  
nB1=0.7 V  
2.70  
2.30  
0.60  
0.75  
0.8  
0.9  
On Resistance Flatness  
(Note 5)  
I
=100 mA, nB0 or  
R
W
OUT  
FLAT(ON)  
nB1 = 0V V  
CC  
V
I
=0 V to V  
=0 V  
,
I
Quiescent Supply  
Current  
4.30  
100  
100  
500  
500  
nA  
IN  
OUT  
CC  
CC  
V
=1.8 V  
4.30  
4.30  
7
3
12  
6
15  
7
IN  
IN  
Increase in I Current  
I
mA  
CC  
CCT  
V
=2.6 V  
per Control Voltage  
3. On resistance is determined by the voltage drop between the A and B pins at the indicated current through the switch.  
4. DR =R  
max – R min measured at identical V , temperature, and voltage.  
ON  
ON  
ON CC  
5. Flatness is defined as the difference between the maximum and minimum value of on resistance over the specified range of conditions.  
www.onsemi.com  
5
 
FSA2466  
AC ELECTRICAL CHARACTERISTICS  
(Typical values are are at T = 25°C unless otherwise specified.)  
A
T = +255C  
T = 40 to +855C  
A
A
V
CC  
Min.  
Typ.  
Max.  
Min.  
Max.  
Symbol  
Parameter  
Condition  
Unit  
Figure  
t
TurnOn Time  
ns  
Figure 3  
nB0 or nB1=1.5 V  
ON  
3.6 to 4.3  
2.7 to 3.6  
2.3 to 2.7  
50  
65  
80  
60  
75  
90  
R =50 W, C =35 pF  
L
L
TurnOff Time  
ns  
ns  
Figure 3  
Figure 4  
Figure 6  
nB0 or nB1=1.5 V  
R =50 W, C =35 pF  
t
3.6 to 4.3  
2.7 to 3.6  
2.3 to 2.7  
3.6 to 4.3  
2.7 to 3.6  
2.3 to 2.7  
32  
42  
52  
40  
50  
60  
OFF  
L
L
BreakBeforenB0 or nB1=1.5 V  
Make Time  
(Note 6)  
t
15  
15  
15  
BBM  
R =50 W, C =35 pF  
L L  
Q
Charge Injection  
pC  
C =100 pF,  
L
3.6 to 4.3  
2.7 to 3.6  
2.3 to 2.7  
8
6
3
V
=0 V, R  
=0 W  
=0 W  
=0 W  
GEN  
GEN  
GEN  
GEN  
C =100 pF,  
L
V
GEN  
=0 V, R  
C =100 pF,  
L
V
GEN  
=0 V, R  
OIRR  
Xtalk  
Off Isolation  
Crosstalk  
dB  
dB  
Figure 5  
Figure 5  
f=100 KHz, R =50 W,  
L
3.6 to 4.3  
2.7 to 3.6  
90  
90  
L
C =5 pF  
2.3 to 2.7  
3.6 to 4.3  
2.7 to 3.6  
2.3 to 2.7  
2.3 to 4.3  
3.6 to 4.3  
90  
90  
90  
90  
245  
0.21  
f=100 KHz, R =50 W,  
L
C =5 pF  
L
BW  
3dB Bandwidth R =50 W  
MHz  
%
Figure 8  
Figure 9  
L
THD  
Total Harmonic  
Distortion  
R =32 W, V =2V  
PP  
,
L
IN  
f=20 to 20 kHz  
2.7 to 3.6  
2.3. to 2.7  
3.6 to 4.3  
2.7 to 3.6  
2.3. to 2.7  
0.17  
0.26  
R =600 W, V =2 V  
,
0.01  
L
IN  
PP  
f=20 to 20 kHz  
0.008  
0.012  
6. Guaranteed by characterization, not production tested.  
CAPACITANCE  
Symbol  
Parameter  
Condition  
f = 1 MHz  
V
T = +255C Typical  
Unit  
Figure  
CC  
A
C
Control Pin Input Capacitance  
0
1.3  
pF  
Figure 3  
IN  
f = 1 MHz  
3.3  
3.3  
3.3  
3.3  
6.0  
C
B Port Off Capacitance  
A Port On Capacitance  
pF  
Figure 3  
OFF  
f = 240 MHz  
f = 1 MHz  
6.0  
21.0  
16.0  
C
pF  
Figure 3  
ON  
f = 240 MHz  
www.onsemi.com  
6
 
FSA2466  
AC Loadings and Waveforms  
Figure 3. TurnOn / TurnOff Timing  
Figure 4. BreakBeforeMake Timing  
Figure 5. Off Isolation and Crosstalk  
www.onsemi.com  
7
FSA2466  
AC Loadings and Waveforms (Continued)  
Figure 6. Charge Injection  
Figure 7. On / Off Capacitance Measurement Setup  
Figure 8. Bandwidth  
Figure 9. Harmonic Distortion  
www.onsemi.com  
8
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
UQFN16 1.8x2.6, 0.4P  
CASE 523BF  
ISSUE O  
DATE 31 OCT 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13709G  
UQFN16 1.8x2.6, 0.4P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
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