FSA557UCX [ONSEMI]
Dual SPST Depletion Mode Audio Switch with Negative Swing;
| 型号： | FSA557UCX |
| 厂家： | 
ONSEMI |
| 描述： | Dual SPST Depletion Mode Audio Switch with Negative Swing |
| 文件： | 总8页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Low Supply Signal Bypass IC
Product Preview
WLCSP 12
UCX SUFFIX
CASE 567ZW
FSA557
The FSA557 integrates 0.3 W depletion and enhancement mode
switches to provide a signal bypass solution when batteries of wireless
devices are low or have no charge left. In addition, an optional slow
gradual transition is included to suppress any undesirable artifacts (ex:
click and pop) when switching between signal sources. The depletion
MARKING DIAGRAM
technology allows the device to conduct signals when there is no V
VTZZ
AYYWW
DD
available and to isolate signals when V is present. The FSA557 is
DD
5.5 V tolerant and can pass or isolate negative signal swings down to
−1.5 V.
VT = Specific Device Code
ZZ = 2−digit Lot Run Code
A
= Assembly Location Code
Features
YY = 2−digit Year Code
WW = Weekly Date Code (1 to 52)
• Dual Depletion Switches
♦ Normally Closed when V < 0.5 V
DD
♦ V : −1.5 V to +5.5 V
SW
♦ R : 220 mW (Typical)
♦ THD+N: −110 dB (Typical)
ON
PIN CONNECTIONS
• Dual Enhancement Switches
♦ V : −1.5 V to +5.5 V
SW
♦ R : 290 mW (Typical)
ON
♦ THD+N: −113 dB (Typical)
Typical Applications
• Battery Powered Devices
• Wireless Headphones
FSA557
Low VDD Path
L1/2
Alternative
Audio
Interface
High VDD Path
Host DSP &
Audio Amplifier
H1/2
COM 1/2
C_EXT
SEL/EN_N
GPIO
Control
Logic
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
VDD
GPIO
CREF
RPD
5MW
VDD can be connected to
supply or GPIO output
Figure 1. Application Schematic
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. P0
FSA557/D
FSA557
Table 1. PIN FUNCTION DESCRIPTION
Pin No. WLCSP12
Pin Name
L1
Description
A1
A2
A3
B1
B2
B3
C1
C2
C3
D1
D2
D3
Low Supply Signal Path 1
VDD
L2
Power Supply or Select Signal from Host GPIO
Low Supply Signal Path 2
COM1
NC
Common Port 1
No Connect
COM2
H1
Common Port 2
High Supply Signal Path 1
EN_N
H2
Path enable (active low)
High Supply Signal Path 2
C_EXT
GND
SEL
Capacitor Reference (Floating disables slow gradual transition)
Ground
Path Select (Grounding forces VDD to determine path selection)
Table 2. SWITCH TRUTH TABLE
VDD
Low or FLOAT
High
EN_N
SEL
Switch State
COMM1/2 = L1/2
COMM1/2 = H1/2
COMM1/2 = L1/2
Hi−Z
Notes
Dead battery
Good battery
Low battery
X
X
LOW OR FLOAT
LOW OR FLOAT
HIGH
LOW OR FLOAT
X
HIGH
X
HIGH
Both paths disabled
NOTE: Click and pop suppression active during any switch state transition that occurs with VDD at an active HIGH level
Table 3. APPLICATION CIRCUIT COMPONENTS
Component
Manufacturer
Part Number
Value
Case Size
Voltage Rating
C
40 nF
REF
www.onsemi.com
2
FSA557
Figure 2. Functional Diagram
Figure 3. Low or Dead Battery Application
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3
FSA557
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
−0.5
−2.0
−2.0
Typ
Max
6.0
Units
V
Supply Voltage
Slew Rate 2V/ms (rising), 1V/ms (falling)
Switch Conducting/Isolating
Switch Isolating
V
V
DD
SW(ON)
V
Switch Voltage Range; L#, H#,
COM#
6.0
V
6.0
SW(OFF)
I
Maximum DC Switch I/O Current
Control Input Voltage; SEL, EN_N
Junction Temperature
350
6.0
mA
V
SW
V
−0.3
−40
−65
CNTRL
T
J
+150
+150
+260
°C
°C
°C
kV
T
STG
Storage Temp
T
Soldering Temp (10 Seconds)
L
ESD
ESD
Electrostatic Discharge Protection Human Body Model
Level
4.0
2.0
8
HBM
CDM
Charged Device Model
ESD
IEC 61000−4−2 System (Contact)
IEC
IEC 61000−4−2 System (Air Gap)
15
Latchup
Latchup Current
JEDEC Standard: JESD78
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 5. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, WLCSP−9
Thermal Resistance, Junction−to−Air (Note 1)
R
48
°C/W
θJA
1. JEDEC Standard, Still Air, 4−layer board with vias
Table 6. RECOMMENDED OPERATING RANGES
Symbol
Parameter
Supply Voltage Range
Conditions
Low Supply Path Conducting
High Supply Path Conducting
Switch Conducting
Min
0.0
Typ
Max
5.5
5.5
5.5
5.5
5.5
+85
Units
V
V
DD(L#)
DD(H#)
SW(ON)
V
1.65
−1.5
−1.5
0.0
V
Switch Voltage Range; L#, H#, COM#
V
V
Switch Isolating
SW(OFF)
V
Control Input Voltage; SEL, EN_N, NC
Operating Ambient Temperature
V
CNTRL
T
A
−40
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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4
FSA557
Table 7. ELECTRICAL CHARACTERISTICS Unless otherwise specified, typical values are for T = 25°C, V = 0 V or 3.3 V.
A
DD
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
OFF
I
Switch Off Leakage
Current
V
= 0 V, High Supply Path Isolating;
0.01
0.2
0.50
4.5
mA
OFF (H#)
DD
COM1/2 = GND; H1/2 = 5.5 V
I
V
DD
= 5.5 V, Low Supply Path Isolating;
OFF (L#)
COM1/2 = GND; L1/2 = 5.5 V
R
*
ON
R
Switch On Resis-
tance
High Supply Path Conducting; I =100 mA,
SW
290
220
500
500
mW
mW
dB
ON (H#)
SW
V
= −1.5 V to +5.5 V
R
Low Supply Path Conducting; I
SW
= 100 mA,
= 100 mA,
ON (L#)
SW
V
= −1.5 V to +5.5 V
DR
ON
Switch On Resis-
tance Matching
High Supply Path Conducting; I
15
15
DR
ON (H#)
SW
V
SW
= −1.5 V to +5.5 V
DR
Low Supply Path Conducting; I =100 mA,
ON (L#)
SW
V
SW
= −1.5 V to +5.5 V
THD+N
THD+N(H#)
1kHz
Total Harmonic Dis-
tortion + Noise
High Supply Path Conducting; R = 32 W;
−113
−110
L
V
SW
= 1 V
; f = 1 kHz
RMS
THD+N(L#)
1kHz
Low Supply Path Conducting; R = 32 W;
L
V
SW
= 1 V
; f = 1 kHz
RMS
OIRR
OIRR(H#)
1kHz
Off Isolation Rejec-
tion Ratio
High Supply Path Isolating; R = 32 W;
−117
−96
dB
L
VSW = 1 V
; f = 1 kHz
RMS
OIRR(H#)
20kHz
High Supply Path Isolating; R = 32 W;
L
V
SW
= 1 V
; f = 20 kHz
RMS
OIRR(L#)
1kHz
Low Supply Path Isolating; R = 32 W;
−107
−88
L
V
= 1 V
; f = 1 kHz
SW
RMS
OIRR(L#)
20kHz
Low Supply Path Isolating; R = 32 W;
L
V
SW
= 1 V
; f = 20 kHz
RMS
XTALK
XTALK(H#)
1 kHz
Crosstalk
Low Supply Path Conducting; R = 32 W; V
=
−120
−120
dB
MHz
dB
L
SW
1 V
; f = 1 kHz; Measure COM2/H1 & COM1/H2
RMS
XTALK(L#)
1 kHz
High Supply Path Conducting; R = 32 W; V
=
L
SW
1 V S; f = 1 kHz; Measure COM2/L1 & COM1/L2
RM
BW
BW(H#)
Bandwidth
High Supply Path Conducting; R = 50 W;
175
155
S
R = 50 W; V
= 70.7 mV
L
SW
RMS
BW(L#)
Low Supply Path Conducting; R = 50 W;
S
R = 50 W; V
= 70.7 mV
L
SW
RMS
PSRR
PSRR(H#)
217 Hz
Power Supply Rejec- High Supply Path Conducting; R = 32 W;
tion Ratio
−112
−112
−92
L
V D = 3.3 V + 100 mVAC,pk; f = 217 Hz
D DC
PSRR(H#)
1 kHz
High Supply Path Conducting; R = 32 W;
L
V
DD
= 3.3 V + 100 mVAC,pk; f = 1 kHz
DC
PSRR(H#)
20 kHz
High Supply Path Conducting; R = 32 W;
L
V
DD
= 3.3 V + 100 mVAC,pk; f = 20 kHz
DC
I
DD
I
Peak Startup Supply
Current
V
DD
= 0 V to 5.5 V
2.5
mA
DDT
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5
FSA557
Table 7. ELECTRICAL CHARACTERISTICS Unless otherwise specified, typical values are for T = 25°C, V = 0 V or 3.3 V.
A
DD
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
DD
I
Quiescent Current
Shutdown Current
Disbale Current
High Supply Path Conducting
Low Supply Path Conducting, V = 3.3 V
65
mA
mA
mA
DD
I
1.25
0.05
SD
DD
I
Low Supply Path Conducting; V = 0.2 V
1.0
DIS
DD
R
PD
R
V
Pull−Down Re-
V
V
V
≤ 0.8 V
5.8
5.0
100
MW
MW
kW
PD (VDD)
DD
DD
sistance
R
Pull−Down Resis-
tance on SEL, EN_N
≤ 5.5 V
CNTRL
PD (VCNTRL)
R
Pull−Down Resis-
tance on NC
= V ≤ 5.5 V
DD NC
PD (NC)
V
TH
V
V
High Voltage
1.65
1.5
V
V
DDH
DD
Threshold
V
V
DD
Low Voltage
0.5
0.5
DDL
Threshold
V
V
DD
Hysteresis
160
80
mV
V
DD_HYST
V
Input High Voltage
Threshold
SEL, EN_N
SEL, EN_N
SEL, EN_N
IH
V
Input Low Voltage
Threshold
V
IL
V
HYST
Input Hysteresis
mV
t
ON
t
Switch Path Turn On
Time
0.3
50
ms
V
= 3.3 V; R = 32 W; C = 10 pF; V
SW
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
ON (L#)
DD
L
L
SEL = 0.0 V to 3.3 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SW
SW
SEL = 0.0 V to 3.3 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
100
3.5
50
L
L
SEL = 0.0 V to 3.3 V; C_EXT = 40 nF
t
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
ON (H#)
L
L
SEL = 3.3 V to 0.0 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SEL = 3.3 to 0.0 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
100
L
L
SW
SEL = 3.3 V to 0.0 V; C_EXT = 40 nF
t
OFF
t
Switch Path Turn Off
Time
0.6
30
60
0.1
30
60
ms
ms
V
= 3.3 V; R = 32 W; C = 10 pF; V
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
OFF (L#)
DD
L
L
SW
SEL = 3.3 V to 0.0 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SW
SW
SEL = 3.3 V to 0.0 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SEL = 3.3 V to 0.0 V; C_EXT = 40 nF
t
Switch Path Turn Off
Time
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
OFF (H#)
L
L
SEL = 0.0 V to 3.3 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SEL = 0.0 V to 3.3 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SEL = 0.0 V to 3.3 V; C_EXT = 40 nF
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6
FSA557
Table 7. ELECTRICAL CHARACTERISTICS Unless otherwise specified, typical values are for T = 25°C, V = 0 V or 3.3 V.
A
DD
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
BBM
t
Break Before Make
Time
0.2
20
40
3
ms
V
= 3.3 V; R = 32 W; C = 10 pF; V
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
= 1.414 V;
BBM (L#)
DD
L
L
SW
SW
SW
SW
SEL = 0.0 to 3.3 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L L
SEL = 0.0 V to 3.3 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SEL = 0.0 V to 3.3 V; C_EXT = 40 nF
t
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
BBM (H#)
L
L
SEL = 3.3 V to 0.0 V; C_EXT = FLOAT
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
20
40
L
L
SW
SEL = 3.3 V to 0.0 V; C_EXT = 20 nF
V
DD
= 3.3 V; R = 32 W; C = 10 pF; V
L
L
SW
SEL = 3.3 V to 0.0 V; C_EXT = 40 nF
C
C
ON
C
On Capacitance
Off Capacitance
High Supply Path Conducting;
SW
45
35
pF
pF
ON (H#)
V
= 100 mVDC + 100 mVAC,pk; f = 1 MHz;
C
Low Supply Path Conducting;
= 100 mVDC + 100 mVAC,pk; f = 1 MHz
ON (L#)
V
SW
OFF
C
High Supply Path Isolating; V
= 100 mVDC +
10
30
40
OFF (H#)
SW
100 mVAC,pk; f = 1 MHz; Measure H#;
C
Low Supply Path Isolating; V = 100 mVDC +
OFF (L#)
SW
100 mVAC,pk; f = 1 MHz; Measure L#;
C
Both Paths Isolating; V = 100 mVDC +
OFF (COM#)
SW
100 mVAC,pk; f = 1 MHz; Measure COM#;
C
Supply Capacitance
V
DD
= 3.3 V + 100 mVAC,pk; f = 1 MHz
15
pF
VDD
DC
f
On−Chip Oscillator
Frequency
Note (For Reference Only)
570
kHz
OSC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
Marking
Package
Shipping
FSA557UCX
VT
WLCSP−12
0.40 mm Pitch
3000 / Tape & Reel
1.62 x 1.635 x 0.457 mm
(Nominal)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
FSA557
PACKAGE DIMENSIONS
WLCSP12 1.620x1.635x0.457
CASE 567ZW
ISSUE O
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
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