FSB43004A [ONSEMI]

智能功率模块，40V，60A，3mΩ;


型号：	FSB43004A
厂家：	ONSEMI
描述：	智能功率模块，40V，60A，3mΩ
文件：	总14页 (文件大小：977K)
中文：	中文翻译
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May 2015

FSB43004A

Motion SPM^®45 LV Series

Features

• UL Certified No.E209204(UL1557)

General Description

FSB43004A is a Motion SPM^®45 LV module that

Fairchild developed based on low-loss PowerTrench^®

MOSFET technology as a compact motor drive inverter

solution for small power applications supplied by low

voltage battery.

• 40 V, R_DS(ON)=3.0 mmax.) 3-phase MOSFET

Inverter Module Including Control IC for Gate Drive

and Protection.

• Ceramic Substrate.

• Three Separate Open-Emitter Pins from Low-Side

MOSFETs for Three-Leg Current Sensing.

• Single-Grounded Power Supply for Built-in HVIC.

• Isolation Rating of 800 Vrms/min.

Applications

Motion Control - Home Appliance / Industrial Motor.

Figure 1. Packing Drawing

( Click to Activate 3D Content )

Package Marking and Ordering Information

Device

Device Marking

Package

Packing Type

Quantity

FSB43004A

SPMAA-A22

Rail

FSB43004A Rev. 1.1

www.fairchildsemi.com

Integrated Power Functions

•

40 V R_DS(ON)= 2.1 mtyp.) inverter for three-phase DC / AC power conversion (please refer to Figure 3)

Integrated Drive, Protection, and System Control Functions

•

For inverter high-side MOSFETs: gate drive circuit, high-voltage isolated high-speed level shifting,

Under-Voltage Lock-Out (UVLO) Protection.

•

For inverter low-side MOSFETs: gate drive circuit, Under-Voltage Lock-Out (UVLO) Protection.

Fault signaling: corresponding to UV (low-side supply).

Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input

Pin Configuration

Figure 2.Top View

FSB43004A Rev. 1.1

www.fairchildsemi.com

Pin Descriptions

Pin Number

Pin Name

Pin Description

Positive DC-Link Input

W Phase Output

V Phase Output

U Phase Output

N_W

Negative DC-Link Input

Fault Output

N_V

N_U

V_FO

IN_(UL)

IN_(VL)

IN_(WL)

COM

Vcc

PWM Input for Low-Side U Phase MOSFET Drive

PWM Input for Low-Side V Phase MOSFET Drive

PWM Input for Low-Side W Phase MOSFET Drive

Common Supply Ground

Common Supply Voltage for IC and Low-side MOSFET Drive

PWM Input for High-Side U Phase MOSFET Drive

PWM Input for High-Side V Phase MOSFET Drive

PWM Input for High-Side W Phase MOSFET Drive

Supply Voltage for High-Side U Phase MOSFET Drive

Supply Ground for High-Side U Phase MOSFET Drive

Supply Voltage for High-Side V Phase MOSFET Drive

Supply Ground for High-Side V Phase MOSFET Drive

Supply Voltage for High-Side W Phase MOSFET Drive

Supply Ground for High-Side W Phase MOSFET Drive

IN_(UH)

IN_(VH)

IN_(WH)

V_B(U)

V_S(U)

V_B(V)

V_S(V)

V_B(W)

V_S(W)

FSB43004A Rev. 1.1

www.fairchildsemi.com

Internal Equivalent Circuit and Input/Output Pins

P (1)

(22) V_B(W)

(21) V_S(W)

VB(W)

VS(W)

OUT(WH)

VS(W)

VB(V)

VS(V)

(20) V_B(V)

(19) V_S(V)

W (2)

VB(U)

VS(U)

(18) V_B(U)

(17) V_S(U)

OUT(VH)

VS(V)

HVIC

(16) IN_(WH)

IN(WH)

IN(VH)

IN(UH)

V (3)

(15) IN_(VH)

(14) IN_(UH)

OUT(UH)

VS(U)

VCC

COM

U (4)

OUT(WL)

OUT(VL)

(13) V_CC

VCC

COM

(12) COM

N_W(5)

N_V(6)

(11) IN_(WL)

(10) IN_(VL)

(9) IN_(UL)

LVIC

IN(WL)

IN(VL)

IN(UL)

VFO

(8) V_FO

OUT(UL)

N_U(7)

Figure 3. Internal Block Diagram

FSB43004A Rev. 1.1

www.fairchildsemi.com

Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)

Inverter Part

Symbol

Parameter

Conditions

Rating

unit

V_PN

DC Link Input Voltage

Applied between P - N_(U), N_(V), N_(W)

Drain-Source Voltage

* ± I_D

Drain Current

T_C= 25°C, T_J≤ 150°C

T_C= 100°C, T_J≤ 150°C

* ± I_DP

Peak Drain Current

T_C= 25°C, under 1ms Pulse Width,

180

T_J≤ 150°C

* P_D

T_J

Maximum Power Dissipation

T_C= 25°C, per Chip, T_J≤ 150°C

Operating Junction Temperature

-40 ~ 150

°C

1st Note:

1. Rating value of marking “*” is calculation value or design factor.

Control Part

Symbol

V_CC

Parameter

Conditions

Rating

unit

Supply Voltage

Applied between V_CC- COM

V_BS

Supply Voltage

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V)

_B(W)- V_S(W)

V_IN

PWM Signal Voltage

Applied between IN_(UH), IN_(VH), IN_(WH)

IN_(UL), IN_(VL), IN_(WL)- COM

-0.3 ~ V_CC+0.3

V_FO

I_FO

Fault Output Supply Voltage

Fault Output Current

Applied between V_FO- COM

Sink Current at V_FOPin

-0.3 ~ V_CC+0.3

Total System

Symbol

Parameter

Conditions

Rating

-40 ~ 150

800

unit

°C

T_STG

V_ISO

Storage Temperature

Isolation Voltage

60 Hz, Sinusoidal, AC 1 Minute, Connect

Pins to Ceramic Substrate

V_rms

Thermal Characteristics

Symbol

Parameter

Condition

Min. Typ. Max. Unit

R_th(j-c)

Junction to Case Thermal Resistance

3.92 °C/W

Inverter MOSFET part(per 1/6 module)

FSB43004A Rev. 1.1

www.fairchildsemi.com

Electrical Characteristics (TJ = 25°C, unless otherwise specified.)

Inverter Part

Symbol

Parameter

Conditions

Min. Typ. Max.

Unit

_IN=0 V, I_D=250 A (2nd Notes 1)

BV_DSS

Drain-Source Breakdown

Voltage

_CC= V_BS= 15 V, V_IN= 5 V, I_D= 60 A

2.1

0.8

3.0

m

R_DS(ON)

V_SD

Drain-Source ON Resistance

Source-Drain Diode

Forward Voltage

V_CC= V_BS= 15 V, V_IN= 0 V, I_SD= 60 A

t_ON

t_C(ON)

t_OFF

t_C(OFF)

t_rr

Switching Characteristic

V_PN= 20 V, V_CC= V_BS= 15 V, I_D= 60 A,

1750

900

2600

800

_IN= 0 V  5 V, High side, Inductive Load

(2nd Notes 2)

I_rr

t_ON

V_PN= 20 V, V_CC= V_BS= 15 V, I_D= 60 A,

1900

850

2600

850

_IN= 0 V  5 V, Low side, Inductive Load

t_C(ON)

t_OFF

t_C(OFF)

t_rr

(2nd Notes 2)

I_rr

I_DSS

Drain-Source Leakage

Current

V_DS= V_DSS

250

A

2nd Notes:

1. BV is the absolute maximum voltage rating between drain and source terminal of each MOSFET. V should be sufficiently less than this value considering the effect of the

DSS

stray inductance so that V should not exceed BV

in any case.

DSS

2. t and t

include the propagation delay time of the internal drive IC. t

and t

are the switching time of MOSFET itself under the given gate driving condition inter-

C(OFF)

OFF

C(ON)

nally. For the detailed information, please see Figure 4.

100% I_D100% I_D

t_rr

V_DS

I_D

V_DS

V_IN

t_ON

t_OFF

t_C(ON)

t_C(OFF)

10% V_DS

10% I_D

10% I_D90% I_D10% V_DS

(b) turn-off

(a) turn-on

Figure 4. Switching Time Definition

FSB43004A Rev. 1.1

www.fairchildsemi.com

Control Part

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

I_QCC

Quiescent V_CCSupply

Current

V_CC= 15 V,

_IN= 0 V

V_CC- COM

2.75

I_QBS

Quiescent V_BSSupply

Current

V_BS= 15 V,

_IN= 0 V

V_B(U)- V_S(U), V_B(V)-V_S(V)

V_B(W)- V_S(W)

0.3

V_FOH

V_FOL

Fault Output Voltage

10 k to 5 V Pull-up

4.5

Normal

Fault

0.5

UV_CCD

UV_CCR

UV_BSD

UV_BSR

t_FOD

Supply Circuit Under-

Voltage Protection

Detection Level

Reset Level

7.0

8.0

7.0

8.0

8.2

9.4

8.0

9.0

10.0

11.0

9.5

10.5

Detection Level

Reset Level

s

Fault-Out Pulse Width

ON Threshold Voltage

V_IN(ON)

Applied between IN_(UH), IN_(VH), IN_(WH), IN_(UL)

IN_(VL), IN_(WL)- COM

2.6

V_IN(OFF)OFF Threshold Voltage

0.8

Recommended Operating Conditions

Value

Symbol

Parameter

Conditions

Unit

Min. Typ. Max.

V_PN

V_CC

V_BS

Supply Voltage

Applied between P - N_(U), N_(V), N_(W)

Applied between V_CC- COM

Control Supply Voltage

13.5

13.0

16.5

18.5

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V)

_B(W)- V_S(W)

dV_CC/dt, Control Supply Variation

dV_BS/dt

-1

-4

V/s

V_SEN

Voltage for Current Sensing

Applied between N_U, N_V, N_W- COM

(Including surge voltage)

FSB43004A Rev. 1.1

www.fairchildsemi.com

Mechanical Characteristics and Ratings

Limits

Typ.

0.62

Parameter

Conditions

Units

Min.

Max.

0.72

120

Mounting Torque

Device Flatness

Weight

Mounting Screw: - M3

0.51

N•m

m

See Figure 5

8.4

Figure 5. Flatness Measurement Position

FSB43004A Rev. 1.1

www.fairchildsemi.com

Time Charts of Protective Function

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_CCR

UV_CCD

Control

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: after the voltage rises UV_CCR, the circuits start to operate when the next input is applied.

a2 : Normal operation: MOSFET ON and carrying current.

a3 : Under-Voltage detection (UV_CCD).

a4 : MOSFET OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under-Voltage reset (UV_CCR).

a7 : Normal operation: MOSFET ON and carrying current.

Figure 6. Under-Voltage Protection (Low-side)

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_BSR

UV_BSD

Control

Supply Voltage

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: after the voltage reaches UV_BSR, the circuits start to operate when the next input is applied.

b2 : Normal operation: MOSFET ON and carrying current.

b3 : Under-Voltage detection (UV_BSD).

b4 : MOSFET OFF in spite of control input condition, but there is no fault output signal.

b5 : Under-Voltage reset (UV_BSR).

b6 : Normal operation: MOSFET ON and carrying current

Figure 7. Under-Voltage Protection (High-side)

FSB43004A Rev. 1.1

www.fairchildsemi.com

+15V

R_BSD_BS

C_BSC_BSF

(22) V_B(W)

(21) V_S(W)

(20) V_B(V)

(19) V_S(V)

P (1)

VB(W)

VS(W)

VB(V)

OUT(WH)

VS(W)

R_BSD_BS

C_BSC_BSF

Gating WH

Gating VH

Gating UH

W (2)

VS(V)

VB(U)

VS(U)

R_BSD_BS

C_BSC_BSF

(18) V_B(U)

(17) V_S(U)

OUT(VH)

VS(V)

HVIC

R_S

(16) IN_(WH)

(15) IN_(VH)

V (3)

U (4)

IN(WH)

IN(VH)

IN(UH)

Motor

R_S

V_DC

(14) IN_(UH)

C_PS

C_DCS

C_PS

OUT(UH)

VS(U)

VCC

COM

(13) V_CC

OUT(WL)

OUT(VL)

VCC

C_SP15F

N_W(5)

N_V(6)

(12) COM

COM

R_S

(11) IN_(WL)

(10) IN_(VL)

(9) IN_(UL)

Gating WL

Gating VL

Gating UL

IN(WL)

IN(VL)

IN(UL)

LVIC

R_SH

R_S

C_PS

+5V

OUT(UL)

R_PF

(8) V_FO

N_U(7)

VFO

Fault

C_PF

Current Sensing

C_SP15

3rd Notes:

1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3 cm)

2. V output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.

3. Input signal is High-Active type. There is a 5 kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommended for the prevention of

input signal oscillation. R C constant should be selected in the range 50~150ns. (Recommended R =100 Ω , C =1 nF)

4. Each capacitors should be mounted as close to the SPM pins as possible.

5. Relays are used at almost every systems of electrical equipment of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

6. The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommended zener diode=24 / 1 W)

Figure 8. Typical Application Circuit

FSB43004A Rev. 1.1

www.fairchildsemi.com

Detailed Package Outline Drawings

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,

specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD22AA.pdf

FSB43004A Rev. 1.1

www.fairchildsemi.com

FSB43004A Rev. 1.1

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FSB43004A [ONSEMI]

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