FSB50250 [ONSEMI]
智能功率模块，500V，2A;
| 型号： | FSB50250 |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块，500V，2A |
| 文件： | 总11页 (文件大小：926K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 10 月
FSB50250
Motion SPM® 5 系列
特性
相关资料
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• 通过 UL 第 E209204 号认证 (UL1557)
• 500 V RDS(on) = 4.0 Ω （最大值）FRFET MOSFET 三
相逆变器，带有栅极驱动器
• AN-9080 - User’s Guide for Motion SPM 5 Series
Ver.1
• 低端 MOSFET 的三个独立开源引脚用于三相电流感测
• 高电平有效接口，可用于 3.3 / 5 V 逻辑电平，施密特触
发脉冲输入
概述
FSB50250 是一款先进的 Motion SPM® 5 模块，为交流
感应、无刷直流电机和 PMSM 电机提供非常全面的高性
能逆变器输出平台。这些模块综合优化了内置 MOSFET
（FRFET® 技术）的栅极驱动以最小化电磁干扰和能量损
耗。内置的高速 HVIC 只需要一个单电源电压，将逻辑电
平栅极输入转化为适合驱动模块内部 MOSFET 的高电
压，高电流驱动信号。独立的开源 MOSFET 端子在每个
相位均有效，可支持大量不同种类的控制算法。
• 针对低电磁干扰进行优化
• 用于栅极驱动和欠压保护的 HVIC
• 绝缘等级：1500 Vrms / 分钟
• 符合 RoHS 标准
应用
• 小功率交流电机驱动器的三相逆变器驱动
封装标识与定购信息
器件
器件标识
封装
包装类型
数量
FSB50250
FSB50250
SPM5B-023
Rail
15
©2006 飞兆半导体公司
1
www.fairchildsemi.com
FSB50250 Rev. C4
绝对最大额定值
逆变器部分 （单个 MOSFET，除非另有说明。）
符号
VDSS
*ID 25
*ID 80
*IDP
参数
工作条件
额定值
500
1.0
单位
V
单个 MOSFET 的漏极 - 源极电压
单个 MOSFET 的漏极持续电流
单个 MOSFET 的漏极持续电流
单个 MOSFET 的漏极峰值电流
最大功耗
TC = 25°C
TC = 80°C
A
0.7
A
TC = 25°C, PW < 100 μs
TC = 25°C, 单个 MOSFET
2.0
A
*PD
4.5
W
控制部分 （单个 HVIC，除非另有说明。）
符号
VCC
VBS
VIN
参数
工作条件
施加在 VCC 和 COM 之间
施加在 VB 和 VS 之间
额定值
单位
20
V
V
V
控制电源电压
高端偏压
20
-0.3 ~ VCC + 0.3
输入信号电压
施加在 IN 和 COM 之间
热阻
符号
参数
参数
工作条件
逆变器工作条件下的单个 MOSFET
（注 1）
额定值
单位
°C/W
RθJC
结点 - 壳体的热阻
9.3
整个系统
符号
TJ
工作条件
额定值
-20 ~ 150
-50 ~ 150
单位
°C
工作结温
存储温度
TSTG
°C
60 Hz，正弦波形， 1 分钟，连接陶
瓷基板到引脚
VISO
1500
Vrms
绝缘电压
注：
1. 关于壳体温度 (T ) 的测量点，参见图 4。
C
2. 标记为 “ * “ 的为计算值或设计因素。
©2006 飞兆半导体公司
2
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FSB50250 Rev. C4
引脚描述
引脚号
1
引脚名
COM
VB(U)
VCC(U)
IN(UH)
IN(UL)
VS(U)
VB(V)
VCC(V)
IN(VH)
IN(VL)
VS(V)
VB(W)
VCC(W)
IN(WH)
IN(WL)
VS(W)
P
引脚描述
IC 公共电源接地
2
U 相高端 MOSFET 驱动的偏压
U 相 IC 和低端 MOSFET 驱动的偏压
U 相高端的信号输入
3
4
5
U 相低端的信号输入
6
U 相高端 MOSFET 驱动的偏压接地
V 相高端 MOSFET 驱动的偏压
V 相 IC 和低端 MOSFET 驱动的偏压
V 相高端的信号输入
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V 相低端的信号输入
V 相高端 MOSFET 驱动的偏压接地
W 相高端 MOSFET 驱动的偏压
W 相 IC 和低端 MOSFET 驱动的偏压
W 相高端的信号输入
W 相低端的信号输入
W 相高端 MOSFET 驱动的偏压接地
直流输入正端
U
U 相输出
NU
U 相的直流输入负端
NV
V 相的直流输入负端
V
V 相输出
NW
W 相的直流输入负端
W
W 相输出
(1) COM
(2) VB(U)
(17) P
(18) U
(3) VCC(U)
(4) IN(UH)
(5) IN(UL)
VCC
HIN
VB
HO
VS
LO
LIN
COM
(6) VS(U)
(7) VB(V)
(19) NU
(20) NV
(8) VCC(V)
(9) IN(VH)
(10) IN(VL)
VCC
HIN
VB
HO
VS
LO
(21) V
LIN
COM
(11) VS(V)
(12) VB(W)
(13) VCC(W)
(14) IN(WH)
(15) IN(WL)
VCC
HIN
VB
HO
VS
LO
(22) NW
(23) W
LIN
COM
(16) VS(W)
图 1. 引脚布局和内部框图 （仰视图）
注：
®
3. 每个低端 MOSFET 的源极端子与 Motion SPM 5 中的电源接地或偏压接地不连接。外部连接应当如图 3 所示。
©2006 飞兆半导体公司
3
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FSB50250 Rev. C4
电气特性 （TJ = 25°C, VCC = VBS = 15 V，除非另有说明。）
逆变器部分 （单个 MOSFET，除非另有说明。）
符号
BVDSS
IDSS
参数
工作条件
VIN = 0 V, ID = 250 μA （注 1）
VIN = 0 V, VDS = 500 V
最小值 典型值 最大值 单位
500
-
-
V
μA
Ω
漏极－源极击穿电压
零栅极电压漏极电流
漏极至源极静态导通电阻
-
-
-
250
4.0
RDS(on)
VCC = VBS = 15 V, VIN = 5 V, ID = 0.5 A
3.3
漏极－源极二极管正向
电压
VSD
V
CC = VBS = 15 V, VIN = 0 V, ID = -0.5 A
-
-
1.2
V
tON
tOFF
trr
-
-
-
-
-
1273
800
213
42
-
-
-
-
-
ns
ns
ns
μJ
μJ
VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A
IN = 0 V ↔ 5 V, 电感负载 L = 3 mH
高端和低端 MOSFET 开关
（注 2）
V
开关时间
EON
EOFF
2.8
VPN = 400 V, VCC = VBS = 15 V, ID = IDP, VDS
BVDSS, TJ = 150°C
=
RBSOA
反向偏压安全工作区
整个区域
高端和低端 MOSFET 开关 （注 3）
控制部分 （单个 HVIC，除非另有说明。）
符号
参数
工作条件
最小值 典型值 最大值 单位
VCC = 15 V,
IN = 0 V
IQCC
-
-
160
μA
VCC 静态电流
施加在 VCC 和 COM 之间
V
VBS = 15 V,
施加在 VB(U) - U,
VB(V) - V, VB(W) - W
IQBS
-
-
100
μA
V
BS 静态电流
V
V
V
V
V
IN = 0 V
UVCCD
UVCCR
UVBSD
UVBSR
VIH
7.4
8.0
7.4
8.0
3.0
-
8.0
8.9
8.0
8.9
-
9.4
9.8
9.4
9.8
-
V
V
CC 欠压保护检测电平
CC 欠压保护复位电平
BS 欠压保护检测电平
BS 欠压保护复位电平
低端欠压保护 （图 8）
高端欠压保护 （图 9）
V
V
V
导通阈值电压
关断阈值电压
逻辑高电平
逻辑低电平
VIN = 5 V
施加在 IN 和 COM 之间
施加在 IN 和 COM 之间
VIL
-
0.8
20
2
V
IIH
-
10
-
μA
μA
输入偏置电流
IIL
VIN = 0 V
-
注：
®
1. BV
是 Motion SPM 5 产品中的单个 MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感，V 应远低于该值，因此 V 在任何情况下不得超过 BV
。
DSS
DSS
PN
DS
2. t 和 t
包括内部驱动 IC 的传输延迟。所列出的数值是在实验室测试条件下测得，在实际应用中因为印刷电路板和布线的差异，数值也会有所不同。请查阅图 4 介绍的开关
ON
OFF
时间定义，以及图 5 中的开关测试电路。
3. 每个 MOSFET 在开关工作时的峰值电流和电压也应在安全工作区 (SOA) 的范围内。请查阅图 5 中的 RBSOA 测试电路，与开关测试电路相同。
©2006 飞兆半导体公司
4
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FSB50250 Rev. C4
推荐工作条件
符号
参数
工作条件
最小值 典型值 最大值 单位
VPN
-
300
400
16.5
16.5
VCC
0.6
-
V
电源电压
施加在 P 和 N 之间
VCC
13.5
13.5
3.0
0
15.0
V
控制电源电压
施加在 VCC 和 COM 之间
施加在 VB 和 VS 之间
VBS
15.0
V
高端偏压
VIN(ON)
VIN(OFF)
tdead
-
-
V
输入导通阈值电压
输入关断阈值电压
防止桥臂直通的死区时间
PWM 开关频率
壳体温度
施加在 IN 和 COM 之间
V
VCC = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C
TJ ≤ 150°C
1.0
-
-
μs
kHz
°C
fPWM
TC
15
-
-
TJ ≤ 150°C
-20
125
These values depend on PWM
control algorithm
R2
15-V Line
P
VDC
R1
D1
HIN
0
LIN
0
Output
Note
VCC
VB
HO
VS
LO
Inverter
Output
Z
Both FRFET Off
Low side FRFET On
High side FRFET On
Shoot through
R5
HIN
LIN
0
1
0
VDC
Micom
C3
1
0
C5
COM
1
1
Forbidden
Z
R3
N
Open Open
Same as (0,0)
One-Leg Diagram of SPM? 5 Product
C2
C1
10μF
* Example of bootstrap paramters:
C1 = C2 = 1μF ceramic capacitor,
R
1 = 56Ω, R2 = 20Ω
图 2. 推荐的 MCU 接口和自举电路及其参数
注：
1. 推荐的自举二极管 D 具有软关断和快速恢复特性，额定电压为 600 V。
1
2. 自举电路的参数取决于 PWM 算法。上述为开关频率为 15 kHz 时的参数的典型例子。
3. Motion SPM 5 产品和 MCU （虚线显示部分）的每个输入端的 RC 耦合 （R 和 C ）和 C ，可用于防止由浪涌噪声产生的错误信号。
5
5
4
4. 印刷电路板图形中的粗线应尽量短且粗，以减少电路中的寄生电感，从而导致浪涌电压的降低。旁路电容 C , C 和 C 应具有良好的高频特性，以吸收高频纹波电流。
1
2
3
14.50mm
3.80mm
Case Temperature(Tc)
Detecting Point
MOSFET
图 3. 壳体温度测量
注：
5. 将热电耦贴在 SPM 5 封装 （如果应用到，放在 SPM 5 封装和散热片中间）的散热片的顶部，以获得正确的温度测量数值。
©2006 飞兆半导体公司
5
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FSB50250 Rev. C4
VIN
VIN
Irr
120% of ID
100% of ID
VDS
ID
10% of ID
ID
VDS
tON
trr
tOFF
(a) Turn-on
(b) Turn-off
图 4. 开关时间定义
REH
VCC
ID
RBS
VCC
VB
HO
VS
LO
L
VDC
HIN
LIN
+
VDS
-
COM
CBS One-leg Diagram of Motion SPM® 5 Product
图 5. 开关和 RBSOA （单脉冲）测试电路 （低端）
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVCCR
Low-side Supply, VCC
MOSFET Current
UVCCD
图 6. 欠压保护 （低端）
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVBSR
High-side Supply, VBS
MOSFET Current
UVBSD
图 7. 欠压保护 （高端）
©2006 飞兆半导体公司
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FSB50250 Rev. C4
R2
(1) COM
(2) VB(U)
(3) VCC(U)
R1
R5
(17) P
(18) U
VCC
HIN
LIN
VB
HO
VS
(4) IN
(UH)
(5) IN
(UL)
C3
VDC
C5
R1
C2
C2
C2
C1
C1
C1
COM LO
(6) VS(U)
(7) VB(V)
(8) VCC(V)
(19) NU
(20) NV
VCC
HIN
LIN
VB
HO
VS
(9) IN
(VH)
(21) V
(10) IN(VL)
M
COM LO
(11) VS(V)
R1
(12) VB(W)
(13) VCC(W)
(14) IN(WH)
(15) IN(WL)
(22) NW
(23) W
VCC
HIN
LIN
VB
HO
VS
COM LO
(16) VS(W)
R4
For 3-phase current sensing and protection
15-V
Supply
C4
R3
图 8. 应用电路实例
注：
1. 关于引脚的位置，请参阅图 1。
®
2. Motion SPM 5 产品和 MCU 的每个输入端的 RC 耦合 (R 和 C , R 和 C6) 和 C ，能有效的防止由浪涌噪声产生的错误的输入信号。
5
5
4
4
3. 由于位于 COM 和低端 MOSFET 的源极端子之间， R 的压降会影响低端的开关性能和自举特性。为此，稳态情况下 R 的压降应小于 1 V。
3
3
4. 为避免浪涌电压和 HVIC 故障，接地线和输出端子之间的接线应短且粗。
5. 所有的滤波电容器应紧密连接到 Motion SPM 5 产品，它们应当具有能够很好的阻挡高频纹波电流的特性。
©2006 飞兆半导体公司
7
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FSB50250 Rev. C4
封装轮廓详图
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和
/ 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/dwg/MO/MOD23DA.pdf
©2006 飞兆半导体公司
8
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FSB50250 Rev. C4
©2006 飞兆半导体公司
9
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FSB50250 Rev. C4
ON Semiconductor and
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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