FSB50650BS [ONSEMI]

智能功率模块 (IPM)，500 V，2.5A;


型号：	FSB50650BS
厂家：	ONSEMI
描述：	智能功率模块 (IPM)，500 V，2.5A 电动机控制
文件：	总11页 (文件大小：693K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSB50650Bꢀ/ꢀFSB50650BS

Motion SPM⁾5 Series

Description

The FSB50650B / FSB50650BS is an advanced Motion SPM 5

module providing a fully−featured, highperformance inverter output

stage for AC Induction, BLDC and PMSM motors such as

refrigerators, fans and pumps. These modules integrate optimized gate

drive of the built−in MOSFETs (FRFET technology) to minimize EMI

and losses, while also providing multiple on−module protection

features including under−voltage lockouts and thermal monitoring.

The built−in high−speed HVIC requires only a single supply voltage

and translates the incoming logic−level gate inputs to the

high−voltage, highcurrent drive signals required to properly drive the

module’s internal MOSFETs. Separate open−source MOSFET

terminals are available for each phase to support the widest variety of

control algorithms.

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SPM5H−023 / 23LD, PDD STD,

SPM23−BD

CASE MODEM

Features

• UL Certified No. E209204 (UL1557)

• Optimized for over 10 kHz Switching Frequency

• 500 V FRFET MOSFET 3−Phase Inverter with Gate Drivers and

Protection

• Built−In Bootstrap Diodes Simplify PCB Layout

• Separate Open−Source Pins from Low−Side MOSFETs for

Three−Phase Current−Sensing

SPM5E−023 / 23LD, PDD STD

CASE MODEJ

• Active−HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt−trigger

Input

MARKING DIAGRAM

• Optimized for Low Electromagnetic Interference

• HVIC Temperature−Sensing Built−In for Temperature Monitoring

FSB50650X

&Z&K&E&E&E&3

• HVIC for Gate Driving and Under−Voltage Protection

• Isolation Rating: 1500 V / min.

rms

• Moisture Sensitive Level (MSL)3 for SMD

= ON Semiconductor Logo

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

• These Devices are Pb−Free and are RoHS Compliant

Applications

FSB50650X

= Specific Device Code

⇒ X = B or BS

• 3−Phase Inverter Driver for Small Power AC Motor Drives

Related Source

• AN−9080 − FSB50450AS − User’s Guide for Motion SPM 5 Series

• AN−9082 − Motion SPM5 Series Thermal Performance by Contact

Pressure

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

March, 2019 − Rev. 2

FSB50650B/D

FSB50650B / FSB50650BS

PACKAGE MARKING AND ORDERING INFORMATION

Device

Device Marking

FSB50650B

Package

Packing Type

Rail

Reel Size

Quantity

FSB50650B

FSB50650BS

SPM5P−023

SPM5Q−023

FSB50650BS

Tape & Reel

330 mm

450

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Conditions

Symbol

INVERTER PART (Each MOSFET Unless Otherwise Specified)

Parameter

Rating

Unit

Drain−Source Voltage of Each MOSFET

500

4.0

DSS

Each MOSFET Drain Current, Continuous

= 25°C

= 80°C

D 25

Each MOSFET Drain Current, Continuous

2.5

D 80

= 25°C, PW < 100 ms

= 80°C, F < 20 kHz

Each MOSFET Drain Current, Peak

Each MOSFET Drain Current, Rms

10.3

1.8

DRMS

rms

PWM

CONTROL PART (Each HVIC Unless Otherwise Specified)

Control Supply Voltage

High−side Bias Voltage

Input Signal Voltage

Applied Between V and COM

Applied Between V and V

B S

Applied Between IN and COM

−0.3 ~ V +0.3

BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified.)

Maximum Repetitive Reverse Voltage

Forward Current

500

0.5

2.0

RRMB

* I

= 25°C

* I

Forward Current (Peak)

= 25°C, Under 1 ms Pulse Width

FPB

THERMAL RESISTANCE

Junction to Case Thermal Resistance

(Note 1)

Inverter MOSFET part, (Per Module)

2.1

°C/W

th(j−c)Q

TOTAL SYSTEM

Operating Junction Temperature

Storage Temperature

−40 ~ 150

−40 ~ 125

1500

°C

STG

ISO

Isolation Voltage

60 Hz, Sinusoidal, 1 minute,

Connection Pins to Heatsink

rms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. For the Measurement Point of Case Temperature T , Please refer to Figure 4.

2. Marking “ * ” Is Calculation Value or Design Factor.

3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions

(i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges.

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FSB50650B / FSB50650BS

PIN DESCRIPTION

Pin No.

Pin Name

COM

Pin Description

IC Common Supply Ground

B(U)

Bias Voltage for U Phase High Side FRFET Driving

Bias Voltage for U Phase IC and Low Side FRFET Driving

DD(U)

Signal Input for U Phase High−side

(UH)

Signal Input for U Phase Low−side

(UL)

N.C

B(V)

Bias Voltage for V Phase High Side FRFET Driving

DD(V)

Bias Voltage for V Phase IC and Low Side FRFET Driving

Signal Input for V Phase High−side

Signal Input for V Phase Low−side

Output for HVIC Temperature Sensing

(VH)

(VL)

Bias Voltage for W Phase High Side FRFET Driving

B(W)

DD(W)

Bias Voltage for W Phase IC and Low Side FRFET Driving

(WH)

Signal Input for W Phase High−side

Signal Input for W Phase Low−side

N.C

(WL)

N.C

Positive DC–Link Input

U, V

Output for U Phase & Bias Voltage Ground for High Side FRFET Driving

Negative DC–Link Input for U Phase

S(U)

Negative DC–Link Input for V Phase

V, V

Output for V Phase & Bias Voltage Ground for High Side FRFET Driving

Negative DC–Link Input for W Phase

S(V)

W, V

Output for W Phase & Bias Voltage Ground for High Side FRFET Driving

S(W)

(1) COM

(17) P

(2) V

B(U)

(3) V

VCC

HIN

DD(U)

(4) IN

(UH)

(18) U, V

S(U)

LIN

(5) IN

(UL)

COM

(6) N.C

(19) N

(20) N

(7) V

(8) V

B(V)

VCC

HIN

DD(V)

(9) IN

(VH)

(21) V, V

S(V)

(10) IN

LIN

COM

V_TS

(VL)

(11) V

(12) V

B(W)

(13) V

VCC

HIN

(22) N

DD(W)

(14) IN

(WH)

(23) W, V

S(W)

LIN

(15) IN

(WL)

COM

(16) N.C

4. Source Terminal of Each Low−Side MOSFET is Not Connected to Supply Ground or Bias Voltage Ground Inside Motion

SPM 5 product. External Connections Should be Made as Indicated in Figure 3.

Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

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FSB50650B / FSB50650BS

ELECTRICAL CHARACTERISTICS (T = 25°C, V = V = 15 V Unless Otherwise Specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

INVERTER PART (Each MOSFET Unless Otherwise Specified)

Drain−Source Breakdown Voltage

Zero Gate Voltage Drain Current

Static Drain−Source On−Resistance

Drain−Source Diode Forward Voltage

Switching Times

= 0 V, I = 1 mA ( Note 5)

500

−

DSS

= 0 V, V = 500 V

DSS

= V = 15 V, V = 5 V, I = 1.5 A

−

1.43

−

1.8

1.1

DS(on)

= V = 15 V, V = 0 V, I = −1.5 A

−

= 300 V, V = V = 15 V, I = 1.5 A

DD BS D

= 0 V ↔ 5 V, Inductive Load L = 3 mH High−

−

440

580

−

OFF

and Low−Side MOSFET Switching

(Note 6)

−

100

−

OFF

RBSOA

Reverse−Bias Safe Operating Area

= 400 V, V = V = 15 V, I = I ,

Full Square

= BV

, T = 150°C

DSS

High− and Low−Side MOSFET Switching (Note 7)

CONTROL PART (Each HVIC Unless Otherwise Specified)

Quiescent V Current = 15 V, V = 0 V

Applied Between V and

−

200

100

QDD

COM

Quiescent V Current

= 15 V, V = 0 V

Applied Between

QBS

PDD

−U, V

B(W)

−V,

B(V)

B(U)

−W

Operating V Supply

− COM

PWM

= 15 V,

−

900

800

= 20 kHz,

Duty = 50%, Applied to

One PWM Signal Input

for Low−Side

Operating V Supply Current

, V

PWM

= V = 15 V,

PBS

B(U)− S(U) B(V)

DD BS

− V

, V

− V

= 20 kHz,

S(V) B(W)

S(W)

Duty = 50%, Applied to

One PWM Signal Input

for High−Side

Low−Side Undervoltage Protection

Undervoltage Protection Detection Level

Undervoltage Protection Reset Level

Undervoltage Protection Detection Level

Undervoltage Protection Reset Level

7.4

8.0

7.4

8.0

600

8.0

8.9

8.0

8.9

790

9.4

9.8

9.4

9.8

980

DDD

DDR

BSD

BSR

(Figure 8)

High−Side Undervoltage Protection

(Figure 9)

HVIC Temperature sensing voltage

output

= 15 V, T

= 25°C (Note 8)

HVIC

ON Threshold Voltage

OFF Threshold Voltage

Logic High Level

Logic Low Level

Applied between IN and

COM

−

2.9

0.8

−

BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified)

Forward Voltage

I = 0.1 A, T = 25°C (Note 9)

−

2.5

−

rrB

Reverse Recovery Time

I = 0.1 A, T = 25°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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FSB50650B / FSB50650BS

RECOMMENDED OPERATING CONDITION

Symbol

Parameter

Supply Voltage

Conditions

Min.

−

Typ.

300

15.0

−

Max.

400

Unit

Applied between P and N

Control Supply Voltage

Applied between V and COM

13.5

3.0

16.5

High−Side Bias Voltage

Applied between V and V

IN(ON)

Input ON Threshold Voltage

Input OFF Threshold Voltage

Blanking Time for Preventing Arm−Short

PWM Switching Frequency

Applied between V and COM

−

0.6

−

IN(OFF)

= V = 13.5 ~ 16.5 V, T ≤ 150°C

1.0

−

kHz

dead

T ≤ 150°C

−

PWM

Built in Bootstrap Diode V −I Characteristic

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

10 11 12 13 14 15

V [V]

= 255C

Figure 2. Built in Bootstrap Diode Characteristics (Typical)

NOTES:

5. BV

is the Absolute Maximum Voltage Rating Between Drain and Source Terminal of Each MOSFET Inside Motion SPM 5 product. V

DSS

in Any

Should be Sufficiently Less Than This Value Considering the Effect of the Stray Inductance so that V Should Not Exceed BV

DSS

Case.

6. t and t

Include the Propagation Delay Time of the Internal Drive IC. Listed Values are Measured at the Laboratory Test Condition, and

OFF

They Can be Different According to the Field Applications Due to the Effect of Different Printed Circuit Boards and Wirings. Please see

Figure 6 for the Switching Time Definition with the Switching Test Circuit of Figure 7.

7. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please

see Figure 8 for the RBSOA test circuit that is same as the switching test circuit.

8. V is only for sensing temperature of module and cannot shutdown MOSFETs automatically.

9. Built in bootstrap diode includes around 15 W resistance characteristic. Please refer to Figure 1.

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FSB50650B / FSB50650BS

These values depend on PWM control algorithm

* Example Circuit : V phase

+15 V

HIN

LIN

Output

Note

VDD

HIN

LIN

Inverter

Output

Both FRFET Off

Low side FRFET On

High side FRFET On

Shoot through

COM

VTS

Forbidden

Open Open

Same as (0,0)

One Leg Diagram of Motion SPM 5 Product

*Example of Bootstrap Paramt:ers

10 mF

= C = 1 mF Ceramic Capacitor

10.Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of

parameters is shown above.

11. RC−coupling (R and C ) and C at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent

improper signal due to surge−noise.

12.Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge−voltage.

Bypass capacitors such as C , C and C should have good high−frequency characteristics to absorb high−frequency ripple−current.

Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters

13.Attach the thermocouple on top of the heat−sink of SPM 5 package (between SPM 5 package and heatsink if applied)

to get the correct temperature measurement.

Figure 4. Case Temperature Measurement

3.5

3.0

2.5

2.0

1.5

1.0

0.5

100

120

140

160

HVIC

[°C]

Figure 5. Temperature Profile of V_TS(Typical)

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FSB50650B / FSB50650BS

120% of I

100% of I

10% of I

OFF

(a) Turn−on

(b) Turn−off

Figure 6. Switching Time Definitions

VDD

HIN

LIN

COM

−

One Leg Diagram of Motion SPM5 Product

Figure 7. Switching and RBSOA (Single−Pulse) Test Circuit (Low−side)

Input Signal

UV Protection

RESET

SET

RESET

Status

DDR

Low−side Supply, V

DDD

MOSFET Current

Figure 8. Under−Voltage Protection (Low−Side)

Input Signal

UV Protection

Status

RESET

SET

RESET

BSR

High−side Supply, V

BSD

MOSFET Current

Figure 9. Under−Voltage Protection (High−Side)

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FSB50650B / FSB50650BS

(1) COM

(2) V

(17) P

B(U)

(3) V

DD(U)

VDD

HIN

(4) IN

(UH)

(UL)

(18) U, V

S(U)

(5) IN

LIN

COM

(6) N.C

(19) N

(7) V

(8) V

B(V)

(20) N

DD(V)

VDD

HIN

(9) IN

(VH)

(21) V, V

S(V)

(10) IN

(VL)

LIN

COM

(11) V

(12) V

(13) V

B(W)

(22) N

DD(W)

VDD

HIN

(14) IN

(15) IN

(WH)

(WL)

(23) W, V

S(W)

LIN

COM

(16) N.C

For current−sensing and protection

15 V

Supply

14.About pin position, refer to Figure 1.

15.RC−coupling (R and C , R and C ) and C at each input of Motion SPM 5 product and MCU are useful to prevent improper input

signal caused by surge−noise.

16.The voltage−drop across R affects the low−side switching performance and the bootstrap characteristics since it is placed between

COM and the source terminal of the low−side MOSFET. For this reason, the voltage−drop across R should be less than 1 V in the

steady−state.

17.Ground−wires and output terminals, should be thick and short in order to avoid surge−voltage and malfunction of HVIC.

18.All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting

high−frequency ripple current.

Figure 10. Example of Application Circuit

SPM is a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other

countries.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SPM5E−023 / 23LD, PDD STD, FULL PACK, DIP TYPE

CASE MODEJ

ISSUE O

DATE 31 JAN 2017

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13543G

SPM5E−023 / 23LD, PDD STD, FULL PACK, DIP TYPE

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SPM5H−023 / 23LD, PDD STD, SPM23−BD (Ver1.5) SMD TYPE

CASE MODEM

ISSUE O

DATE 31 JAN 2017

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13546G

SPM5H−023 / 23LD, PDD STD, SPM23−BD (Ver1.5) SMD TYPE

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



FSB50650BS [ONSEMI]

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