FSB560 [ONSEMI]
NPN 低饱和晶体管;
| 型号： | FSB560 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 低饱和晶体管 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FSB560 / FSB560A
NPN Low-Saturation Transistor
Features
C
• These devices are designed with high-current gain and low-saturation
voltage with collector currents up to 2 A continuous.
E
B
SuperSOTTM-3 (SOT-23)
Ordering Information
Part Number
FSB560
Marking
560
Package
SSOT 3L
SSOT 3L
Packing Method
Tape and Reel
FSB560A
560A
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
80
V
5
V
Collector Current - Continuous
2
A
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
°C
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Publication Order Number:
FSB560A/D
© 2001 Semiconductor Components Industries, LLC.
December-2017, Rev. 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
500
4
Unit
mW
Total Device Dissipation
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
250
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Conditions
Min.
60
Max.
Unit
V
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = 100 μA, IE = 0
IE = 100 μA, IC = 0
80
V
5
V
V
CB = 30 V, IE = 0
100
10
nA
μA
nA
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = 30 V, IE = 0, TA = 100°C
VEB = 4 V, IC = 0
100
IC = 100 mA, VCE = 2 V
70
100
250
80
FSB560
300
550
IC = 500 mA, VCE = 2 V
hFE
DC Current Gain(4)
FSB560A
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 1 A, IB = 100 mA
40
300
350
300
1.25
1
Collector-Emitter Saturation
Voltage(4)
V
CE(sat)
FSB560
mV
IC = 2 A, IB = 200 mA
FSB560A
VBE(sat) Base-Emitter Saturation Voltage(4)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
V
V
VBE(on)
Cobo
Base-Emitter On Voltage(4)
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
30
pF
IC = 100 mA, VCE = 5 V,
f = 100 MHz
fT
Transition Frequency
75
MHz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
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2
Typical Performance Characteristics
1.4
1.4
1.2
1
β = 10
Vce = 2.0V
1.2
1
- 40 °C
- 40 °C
0.8
0.8
0.6
0.4
0.2
25 °C
0.6
0.4
0.2
25 °C
125 °C
125 °C
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
I C- COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Figure 1. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base-Emitter On Voltage
vs. Collector Current
0.8
450
400
350
300
250
200
150
100
50
f
= 1.0 MHz
β = 10
0.6
Cibo
25°C
125°C
0.4
- 40°C
0.2
Cobo
0
0
0.001
0.01
0.1
1
10
0.1 0.2
0.5
1
2
5
10 20
50 100
VCE - COLLECTOR VOLTAGE (V)
IC- COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Input / Output Capacitance
vs. Reverse Bias Voltage
400
700
600
500
400
300
200
100
0
VCE = 2 V
TA=150oC
FSB560
FSB560A
TA=125oC
300
200
100
0
25oC
VCE = 2 V
25oC
-40oC
-40oC
0.001
0.010
0.100
1.000
10.000
0.001
0.010
0.100
1.000
10.000
IC- COLLECTOR CURRENT [A]
IC- COLLECTOR CURRENT [A]
Figure 5. Current Gain vs. Collector Current
Figure 6. Current Gain vs. Collector Current
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3
Physical Dimensions
Figure 7. MOLDED PACKAGE, SUPERSOT, 3-LEAD
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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