FSB70550 [ONSEMI]

智能功率模块，500V，5A;


型号：	FSB70550
厂家：	ONSEMI
描述：	智能功率模块，500V，5A 开关
文件：	总12页 (文件大小：508K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2015 年12 月

FSB70550

Motion SPM^®7 系列

特性

应用

• 通过UL 第E209204 号认证(UL1557)

• 高性能PQFN 封装

• 小功率交流电机驱动器的三相逆变器驱动

相关资料

• AN-9077 - Motion SPM® 7 Series User’s Guide

• 500 V R_DS(on)= 1.85 Ω（最大值）FRFET MOSFET 三

相逆变器，带有栅极驱动器和保护功能

• AN-9078 - Surface Mount Guidelines for Motion

SPM® 7 Series

• 低端MOSFET 的三个独立开源引脚用于三相电流感测

• 高电平有效接口，可用于3.3 / 5 V 逻辑电平，施密特触

发脉冲输入

概述

FSB70550 是一款先进的 SPM^®7 模块，为交流感应、

BLDC 和 PMSM 电机提供功能齐全的高性能逆变输出

级。这些模块综合优化了内置MOSFETs （FRFET^®技

术）的栅极驱动以最小化电磁干扰和能量损耗。同时也提

供多重模组保护特性，集成欠压闭锁，热量监测，故障报

告和互锁功能。内置的一个 HVIC 将逻辑电平栅极输入转

化为适合驱动模块内部 MOSFET 的高电压，高电流驱动

信号。独立的开源 MOSFET 端子在每个相位均有效，可

支持大量不同种类的控制算法。

• 针对低电磁干扰进行优化

• HVIC 内嵌温度感测功能，用于监控温度

• 栅极驱动HVIC，具有欠压保护和互锁功能

• 绝缘等级：1500 V_rms/ 分钟。

• 湿度敏感等级(MSL) 3

• 符合RoHS 标准

封装标识与定购信息

器件标识

器件

封装

卷尺寸

卷带宽度

数量

FSB70550

PQFN27A

13’’

24 mm

1000 个

FSB70550 Rev. 1.2

www.fairchildsemi.com

绝对最大额定值

逆变器部分（单个MOSFET，除非另有说明。）

符号

V_DSS

*I_{D 25}

*I_{D 80}

*I_DP

参数

工作条件

额定值

500

单位

单个MOSFET 的漏极— 源极电压

单个MOSFET 的漏极持续电流

单个MOSFET 的漏极峰值电流

最大功耗

5.3

T_CB= 25°C （注1）

T_CB= 80°C

_CB= 25°C, PW < 100 μs

3.9

10.6

110

*P_D

T_CB= 25°C，单个MOSFET

控制部分（单个HVIC，除非另有说明。）

符号

V_DD

V_BS

V_IN

参数

工作条件

施加在V_DD和COM 之间

施加在V_B和V_S之间

施加在IN 和COM 之间

施加在FO 和COM 之间

灌电流FO 引脚

额定值

单位

控制电源电压

高端偏压

-0.3 ~ V_DD+ 0.3

输入信号电压

故障输出电源电压

故障输出电流

电流感测输入电压

V_FO

I_FO

V_CSC

-0.3 ~ V_DD+ 0.3

施加在Csc 和COM 之间

整个系统

符号

T_J

参数

工作条件

额定值

-40 ~ 150

-40 ~ 125

单位

°C

工作结温

存储温度

T_STG

°C

60 Hz，正弦波形，1 分钟，连接陶

瓷基板到引脚

V_ISO

1500

V_rms

绝缘电压

注：

1. T 是壳体底部的垫片温度。

2. 标记为“ * ” 的为计算值或设计因素。

FSB70550 Rev. 1.2

www.fairchildsemi.com

引脚描述

引脚号

引脚名

/FO

引脚描述

故障输出

V_TS

以电压形式输出的HVIC 温度

用于故障输出持续时间的电容

短路电流感测输入电容（低通滤波器）

驱动IC 和MOSFET 的电源偏置电压

高端U 相的信号输入

Cfod

Csc

V_DD

IN_UH

IN_VH

COM

IN_WH

IN_UL

IN_VL

IN_WL

高端V 相的信号输入

8 (8a)

公共电源接地

高端W 相的信号输入

低端U 相的信号输入

低端V 相的信号输入

低端W 相的信号输入

U 相的直流输入负端

U 相输出

V 相的直流输入负端

V 相输出

W 相输出

W 相的直流输入负端

V_S(W)

P_W

W 相MOSFET 驱动的高端偏压接地

W 相的直流输入正端

P_V

V 相的直流输入正端

P_U

U 相的直流输入正端

23 (23a)

24 (24a)

V_S(V)

V_S(U)

V_B(U)

V_B(V)

V_B(W)

V 相MOSFET 驱动的高端偏压接地

U 相MOSFET 驱动的高端偏压接地

U 相MOSFET 驱动的高端偏压

V 相MOSFET 驱动的高端偏压

W 相MOSFET 驱动的高端偏压

(19) V_S(W)

(23), (23a) V_S(V)

(24), (24a) V_S(U)

(22) Pu

(21) Pv

(20) Pw

OUT(UH)

VS(U)

(25) V_B(U)

(26) V_B(V)

(27) V_B(W)

VB(U)

VB(V)

VB(W)

(14) U

OUT(VH)

VS(V)

(16) V

(5) V_DD

V_DD

COM

OUT(WH)

VS(W)

(8),(8a) COM

(6) IN_UH

(7) IN_VH

(9) IN_WH

(10) IN_UL

(11) IN_VL

(12) IN_WL

(1) /Fo

(17) W

OUT(UL)

OUT(VL)

(13) Nu

(15) Nv

(18) Nw

/Fo

(2) V_TS

(3) Cfod

(4) Csc

V_TS

Cfod

Csc

OUT(WL)

图1. 引脚布局和内部框图

注：

4. 每个低端MOSFET 的源极端子与Motion SPM 7 中的电源接地或偏压接地不连接。外部连接应当如图2 所示。

5. 后缀为-a 的垫片连接到相同数字的引脚，例如：8 和8a 在内部连接在一起。

FSB70550 Rev. 1.2

www.fairchildsemi.com

电气特性（T_J= 25°C，VDD = VBS = 15 V 除非另有说明。）

逆变器部分（单个MOSFET，除非另有说明。）

符号

BV_DSS

I_DSS

参数

工作条件

最小值典型值最大值单位

500

漏极－源极击穿电压

零栅极电压漏极电流

漏极至源极静态导通电阻

漏极－源极二极管正向电压

V_IN= 0 V, I_D= 1 mA （注1）

V_IN= 0 V, V_DS= 500 V

R_DS(on)

V_SD

V_DD= V_BS= 15 V, V_IN= 5 V, I_D= 1.0 A

1.6

0.9

600

540

480

410

1.4

1.85

_DD= V_BS= 15V, V_IN= 0 V, I_D= -1.0 A

1.2

t_ON

t_D(ON)

t_OFF

t_D(OFF)

I_rr

V_PN= 300 V，V_DD= V_BS= 15 V，I_D= 1.0 A

_IN= 0 V ↔ 5 V，电感负载L = 3 mH

低端MOSFET 开关

开关时间

（注2）

t_rr

μJ

E_ON

E_OFF

控制部分（单个HVIC，除非另有说明。）

符号

参数

工作条件

最小值典型值最大值单位

I_QDD

V_DD=15V, V_IN=0V

V_DD- COM

1.7

3.0

_DD静态电流

_B(X)-V_S(X),V_B(V)-V_S(V)

I_QBS

_BS=15V, V_IN=0V

μA

V_BS静态电流

V_B(W)-V_S(W)

_DD=15V，F_PWM=20kHz，

I_PDD

V_DD- COM

1.9

3.2

_DD工作电流

占空比=50%，PWM 信号

低端输入

_BS=15V，F_PWM=20kHz，

V_B(U)-V_S(U),V_B(V)-V_S(V)

V_B(W)-V_S(W)

I_PBS

300

400

μA

V_BS工作电流

占空比=50%，PWM 信号

高端输入

UV_DDD

UV_DDR

UV_BSD

UV_BSR

7.4

8.0

7.4

8.0

8.9

8.0

8.9

9.4

9.8

9.4

9.8

_DD欠压保护检测电平

_DD欠压保护复位电平

低端欠压保护（图6）

高端欠压保护（图7）

V_BS欠压保护检测电平

V_BS欠压保护复位电平

V_TS

580

675

770

2.4

HVIC 温度感测电压输出 V_DD=15 V, T_HVIC=25°C （注3）

V_IH

V_IL

导通阈值电压

关断阈值电压

逻辑高电平

逻辑低电平

IN - COM

_SC- COM

0.8

V_SC(ref)

t_FOD

_DD=15 V

0.45

1.0

0.5

1.4

0.55

1.8

短路电流保护触发电平

故障输出脉宽

C_FOD=33 nF （注4）

注：

1. BV

是Motion SPM 7 产品中的单个MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感，V 应远低于该值，因此V 在任何情况下不得超过BV

。

DSS

2. t 和t

包括内部驱动IC 的传输延迟。所列出的数值是在实验室测试条件下测得，在实际应用中因为印刷电路板和布线的差异，数值也会有所不同。请参阅图3 介绍的开关

OFF

时间定义，以及图4 中的开关测试电路。

3. V 只能用作模块的温度感测，但不能自动关闭MOSFETs。

-6

4. 故障输出脉宽t

取决于电容C

的值，可采用下面的近似公式进行计算：C

= 24 x 10 x t

[F]

FOD

FSB70550 Rev. 1.2

www.fairchildsemi.com

推荐工作条件

符号

参数

工作条件

最小值典型值最大值单位

V_PN

V_DD

V_BS

300

15.0

400

16.5

电源电压

施加在P 和N 之间

13.5

控制电源电压

高端偏压

施加在V_DD和COM 之间

施加在V_B和V_S之间

dV_DD/dt,

dV_BS/dt

-1.0

1.0

V/μs

控制电源波动

t_dead

f_PWM

V_DD= V_BS= 13.5 ~ 16.5 V, T_J≤ 150°C

T_J≤ 150°C

500

防止桥臂直通的死区时间

kHz

PWM 开关频率

热阻

符号

参数

工作条件

最小值典型值最大值单位

单个MOSFET 工作条件下

（注1）

0.9

°C/W

R_θJCB

结点— 壳体底部的热阻

These values depend on PWM

5-V

Line

15-V

control algorithm

One-Leg Diagram of SPM

Line

V_PN

V_DD

HIN

R₅

Inverter

Output C₃

Micom

LIN

/Fo

C₅

V_TS

R₃

C_SC

COM

C₄

C₂

C₆

10μF

R₂

* Example of bootstrap paramters:

C₁= C₂= 1μ F ceramic capacitor,

图2. 推荐的MCU 接口和自举电路及其参数

注：

1. R

是根据应用电路板布局得出的模拟值。（请参考用户指导手册SPM7 系列）

θJCB

2. 自举电路的参数取决于PWM 算法。上述为开关频率为15 kHz 时的参数的典型例子。

3. （虚线显示部分）每个输入端的RC 耦合（R 和C ），可用于防止由浪涌噪声产生的错误输入信号。SPM 的信号输入与标准COMS 或LSTTL 的输出兼容。

4. 印刷电路板图形中的粗线应尽量短且粗，以减少电路中的寄生电感，从而导致浪涌电压的降低。

FSB70550 Rev.1.2

www.fairchildsemi.com

0 0 % I _D

1 2 0 % I _D

t _{r r}

I _{r r}

I _D

I N

t _D

( O

N )

( O

F F )

t _O

I N ( O F F )

9 0

I _D

1 0 % I _D

I N

(

)

I _D

0 % I _D

( b ) T u r n - o f f

( a ) T u r n - o n

图3. 开关时间的定义

5-V

Line

15-V

Line

I_D

V_DD

HIN

LIN

V_DC

V_DS

/Fo

V_TS

COM

图4. 开关测试电路（低端）

Input Signal

UV Protection

Status

RESET

DETECTION

RESET

UV_BSR(DDR)

High-side/Low-side

UV_BSD(DDD)

MOSFET Drain Current

Fault Output

(Only Low-side UV protection)

图5. 欠压保护

FSB70550 Rev. 1.2

www.fairchildsemi.com

Control input

Protection

Circuit state

SET

RESET

Internal MOSFET

Gate-Source Voltage

Output Current

SC Reference Voltage

Sensing Voltage

of the shunt

resistance

CR circuit time

constant delay

Fault Output Signal

图6. 短路电流保护

（包含外部分流电阻和CR 连接）

c1：正常工作：MOSFET 导通并加载电流。

c2：短路电流检测（SC 触发）。

c3：MOSFET 栅极硬中断。

c4：MOSFET 关断。

c5：故障输出延时工作启动：故障持续时间(t_FOD

c6：输入“L”：MOSFET 关断状态。

)

c7：输入“H”：MOSFET 导通状态，但是在故障输出有效的时间内，MOSFET 不导通。

c8：MOSFET 关断状态

Hin

Lin

图7. 互锁功能的时间图

FSB70550 Rev. 1.2

www.fairchildsemi.com

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Min.

Typ.

Max.

Typ. 2.57V@125°Ｃ

Typ. 2.10V@100°Ｃ

125±5°Ｃ

100±5°Ｃ

Typ. 1.15V@50°Ｃ

50±5°Ｃ

100

125

150

175

HVIC Temperature, T_HVIC[°Ｃ]

图8. 温度曲线V vs. T

HVIC

V_S(W)

V_S(V)

V_S(U)

OUT(UH)

V_B(U)

V_B(V)

V_B(W)

VB(U)

VB(V)

VB(W)

VS(U)

OUT(VH)

VS(V)

V_DC

15V

OUT(WH)

VS(W)

V_DD

VDD

COM

OUT(UL)

OUT(VL)

/Fo

IN_UH

/Fo

IN_VH

IN_WH

IN_UL

IN_VL

IN_WL

MCU

C₅

V_TS

Vts

OUT(WL)

Cfod

Csc

Cfod

Csc

C₄

C₇

图9. 应用电路实例

注：

1. Motion SPM 7 产品和MCU 的每个输入端的RC 耦合（R 和C , R 和C ）和C , C , C , C ，能有效的防止由浪涌噪声产生的错误的输入信号。

2. 为避免浪涌电压和HVIC 故障，接地线和输出端子之间的接线应短且粗。

3. 所有的滤波电容器应紧密连接到Motion SPM 7 产品，它们应当具有能够很好的阻挡高频纹波电流的特性。

FSB70550 Rev. 1.2

www.fairchildsemi.com

0.10

A B

0.75

0.55

0.65

3 4

(9X)

10 11 12

6.45

5.85

5.60

5.05

4.50

5.80

4.75

3.90

0.40

(26X)

0.20

2.85

2.25

2.05

(1.15)

1.85

1.55

1.15

(1.50)

24a

(1.60)

23a

1.00

0.60

0.45

0.00

0.15

0.20

0.30

0.65

0.80

1.20

1.10

2.25

2.65

2.50

2.75

2.90

4.05

4.45

4.90

5.60

6.10

6.45

4.40

5.95

0.35

0.15

(6X)

0.35

0.15

(4X)

1.65

1.45

BOTTOM VIEW

SCALE: 2:1

13.00

12.80

PKG

21 21 20 20

18 18

0.10 C

1.40

1.20

13.00

12.80

23a

0.08 C

C²³

PKG

24a

0.05

0.00

0.30

0.20

SEATING

PLANE

SCALE: 2:1

9 10 1112

PIN 1

QUADRANT

TOP VIEW

SEE DETAIL 'A'

0.10 C

1.40

1.20

FRONT VIEW

0.35

0.55

18 18

6.88

6.13

4.40

6.13

5.58

4.88

4.48

4.05

0.35

TYP

2.73

2.48

2.65

2.23

1.55

24a

1.65

23a

1.23

0.80

0.98

0.20

0.00

0.70

0.65

0.48

0.60

1.03

1.05

1.15

1.53

1.85

2.03

2.23

2.88

3.42

3.88

1.11 (9X)

4.50

5.08

4.78

5.58

5.78

6.23

6.88

5.85

0.35

10 11 12

0.65

TYP

0.30

LAND PATTERN

RECOMMENDATION

SCALE: 2:1

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE IS NOT PRESENTLY

REGISTERED TO ANY STANDARD

COMMITTEE.

B) DIMENSIONS DO NOT INCLUDE BURRS OR

MOLD FLASH. MOLD FLASH OR BURRS DOES

NOT EXCEED 0.10MM.

C) ALL DIMENSIONS ARE IN MILLIMETERS.

D) DRAWING CONFORMS TO ASME Y14.5M-1994.

E) LAND PATTERN REFERENCE:

QFN65P1290X1290X140-40N-40N

F) DRAWING FILE NAME: MKT-PQFN27AREV3.

G) IT IS NOT NECESSARY TO SOLDER 23a AND

24a, AND CAN BE OMITTED FROM THE

FOOTPRINT

H) FAIRCHILD SEMICONDUCTOR

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

FSB70550 [ONSEMI]

相关型号：

FSB70625

FSB749

FSB749

FSB749D87Z

FSB749_NL

FSBA1

FSBA3

FSBB1

FSBB10CH120D

FSBB10CH120DF

FSBB15CH120D

FSBB15CH120DF