FSDM07652REWDTU [ONSEMI]
用于 70 W 离线反激式转换器的 650 V 集成电源开关;
| 型号： | FSDM07652REWDTU |
| 厂家： | 
ONSEMI |
| 描述： | 用于 70 W 离线反激式转换器的 650 V 集成电源开关 局域网 开关 电源开关 转换器 |
| 文件： | 总21页 (文件大小：693K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FSDM0465RE, FSDM0565RE, FSDM07652RE
Green Mode Power Switch
Features
Description
Internal Avalanche-Rugged SenseFET
The FSDM0465RE, FSDM0565RE and FSDM07652RE
are an integrated Pulse Width Modulator (PWM) and
SenseFET specifically designed for high-performance
offline Switch Mode Power Supplies (SMPS) with
minimal external components. This device is an
integrated high-voltage power-switching regulator that
Advanced Burst-Mode Operation Consumes Under
1W at 240VAC & 0.5W load
Precision Fixed Operating Frequency (66kHz)
Internal Start-up Circuit
Improved Pulse-by-Pulse Current Limiting
Over-Voltage Protection (OVP)
Overload Protection (OLP)
combines an avalanche-rugged SenseFET with
a
current mode PWM control block. The PWM controller
includes an integrated fixed-frequency oscillator, under-
voltage lockout, leading-edge blanking (LEB), optimized
gate driver, internal soft-start, temperature-compensated
precise-current sources for a loop compensation, and
Internal Thermal Shutdown Function (TSD)
Auto-Restart Mode
Under-Voltage Lockout (UVLO) with hysteresis
Low Operating Current (2.5mA)
Built-in Soft-Start
self-protection circuitry. Compared with
a discrete
MOSFET and PWM controller solution, it can reduce total
cost; component count, size, and weight; while
simultaneously increasing efficiency, productivity, and
system reliability. This device is a basic platform well
suited for cost-effective designs of flyback converters.
Applications
SMPS for LCD monitor and STB
Adaptor
Ordering Information
Product Number
FSDM0465REWDTU(1)
FSDM0565REWDTU
FSDM07652REWDTU
Package
Marking Code
DM0465RE
BVDSS
650V
RDS(ON) Max.
2.6 Ω
TO-220F-6L (Forming)
TO-220F-6L (Forming)
TO-220F-6L (Forming)
DM0565RE
650V
2.2 Ω
DM07652RE
650V
1.6 Ω
Note:
1. WDTU: Forming Type.
All packages are lead free per JEDEC: J-STD-020B standard.
© 2006 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FSDM0465RE/D
Typical Circuit
AC
IN
DC
OUT
Vstr
Drain
PWM
VCC
FB
Source
FSDM0565RE Rev: 00
Figure 1. Typical Flyback Application
Output Power Table
230VAC ±15%(4)
85–265VAC
Product
Adapter(2)
Open Frame(3)
Adapter(2)
Open Frame(3)
FSDM0465RE
FSDM0565RE
FSDM07652RE
48W
56W
70W
80W
40W
50W
60W
48W
60W
70W
60W
70W
Notes:
2. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient.
3. Maximum practical continuous power in an open-frame design at 50°C ambient.
4. 230VAC or 100/115VAC with doubler.
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2
Internal Block Diagram
VCC
3
Vstr
6
Drain
1
NC 5
Istart
0.5/0.7V
+
Internal
Bias
Vref
8V/12V
2.5R
VCC good
-
Vref
VCC
Idelay
OSC
IFB
PWM
R
S
R
Q
Q
FB 4
Gate
driver
Soft-start
LEB
VSD
VCC
2 GND
S
R
Q
Vovp
TSD
Q
VCC good
VCL
FSDM0565RE Rev: 00
Figure 2. Functional Block Diagram of FSDM0x65RE
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3
Pin Configuration
TO-220F-6L
6. Vstr
5. NC
4. FB
3. VCC
2. GND
1. Drain
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
Description
SenseFET drain. This pin is the high-voltage power SenseFET drain. It is de-
signed to drive the transformer directly.
1
2
Drain
GND
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply voltage input. During start-up,
the power is supplied by an internal high-voltage current source connected to
the Vstr pin. When VCC reaches 12V, the internal high-voltage current source
is disabled and the power is supplied from the auxiliary transformer winding.
3
VCC
Feedback. This pin is internally connected to the inverting input of the PWM
comparator. The collector of an opto-coupler is typically tied to this pin. For
stable operation, a capacitor should be placed between this pin and GND. If
the voltage of this pin reaches 6.0V, the overload protection is activated,
re-sulting in shutdown of the Power Switch.
4
FB
5
6
NC
Vstr
No Connection.
Start-up. This pin is connected directly to the high-voltage DC link. At start-up,
the internal high-voltage current source supplies internal bias and charges the
external capacitor connected to the VCC pin. Once VCC reaches 12V, the in-
ternal current source is disabled.
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4
Absolute Maximum Ratings
The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The
device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables
are not guaranteed at the absolute maximum ratings. TA = 25°C, unless otherwise specified.
Symbol
BVDSS
Vstr
Parameter
Drain Source Breakdown Voltage
Max. Voltage at Vstart pin
Value
650
650
9.6
11
Unit
V
V
FSDM0465RE
TC=25°C
TC=25°C
IDM
Drain Current Pulsed(5)
FSDM0565RE
FSDM07652RE
ADC
TC=25°C
15
TC=25°C
2.2
1.4
2.8
1.7
3.8
2.4
FSDM0465RE
TC=100°C
TC=25°C
ID
Continuous Drain Current FSDM0565RE
FSDM07652RE
A
TC=100°C
TC=25°C
TC=100°C
FSDM0465RE
FSDM0565RE
FSDM07652RE
EAS
Single Pulsed Avalanche Energy(6)
190
370
mJ
VCC
VFB
Supply Voltage
20
V
V
Input Voltage Range
-0.3 to VCC
45
PD(Watt H/S) Total Power Dissipation (TC=25°C)
W
°C
°C
°C
TJ
TA
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
Internally limited
-25 to +85
-55 to +150
TSTG
ESD Capability, HBM Model
(All pins except Vstr and FB)
2.0
kV
V
(GND-Vstr/VFB=1.5kV)
ESD Capability, Machine Model
(All pins except Vstr and FB)
300
(GND-Vstr/VFB=225V)
Notes:
5. Repetitive rating: Pulse width limited by maximum junction temperature.
6. L=14mH, starting TJ=25°C.
Thermal Impedance
TA=25°C, unless otherwise specified.
Symbol
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
Value
49.90
2.78
Unit
°C/W
°C/W
(7)
θJA
(8)
θJC
Notes:
7. Free-standing, with no heat-sink, under natural convection.
8. Infinite cooling condition - refer to the SEMI G30-88.
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
SenseFET SECTION
VDS = 650V, VGS = 0V
250
250
FSDM0465RE
VDS = 520V, VGS = 0V, TC = 125°C
VDS = 650V, VGS = 0V
500
µA
Zero Gate Voltage
Drain Current
IDSS
FSDM0565RE
VDS = 520V, VGS = 0V, TC = 125°C
VDS = 650V, VGS = 0V
500
500
500
FSDM07652RE
FSDM0465RE
VDS = 520V, VGS = 0V, TC = 125°C
2.20 2.60
Static Drain Source
on Resistance(9)
RDS(ON)
COSS
td(on)
tr
FSDM0565RE VGS = 10V, ID = 2.5A
FSDM07652RE
1.76 2.20
Ω
pF
ns
ns
ns
ns
1.40 1.60
FSDM0465RE
60
78
100
23
22
22
20
52
60
65
95
115
27
50
65
Output Capacitance FSDM0565RE VGS = 0V, VDS = 25V, f = 1MHz
FSDM07652RE
FSDM0465RE
Turn-On Delay Time FSDM0565RE VDD = 325V, ID = 5A
FSDM07652RE
FSDM0465RE
Rise Time
FSDM0565RE VDD = 325V, ID = 5A
FSDM07652RE
FSDM0465RE
td(off)
Turn-Off Delay Time FSDM0565RE VDD = 325V, ID = 5A
FSDM07652RE
FSDM0465RE
tf
Fall Time
FSDM0565RE VDD = 325V, ID = 5A
FSDM07652RE
CONTROL SECTION
fOSC Switching Frequency
ΔfSTABLE Switching Frequency Stability
VFB = 3V
60
0
66
1
72
3
kHz
%
13V ≤ VCC ≤ 18V
-25°C ≤ TA ≤ 85°C
VFB = GND
ΔfOSC
Switching Frequency Variation(10)
0
±5
0.9
82
82
80
±10
1.1
87
87
85
0
%
IFB
Feedback Source Current
0.7
77
77
75
mA
%
FSDM0465RE
DMAX
Maximum Duty Cycle FSDM0565RE
FSDM07652RE
%
%
DMIN
VSTART
VSTOP
tS/S
Minimum Duty Cycle
%
VFB = GND
11
7
12
8
13
9
V
UVLO Threshold Voltage
Internal Soft-Start Time
VFB = GND
VFB = 3
V
10
15
ms
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Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
BURST MODE SECTION
VBURH
VCC = 14V
0.7
0.5
V
V
Burst Mode Voltages
VBURL
VCC = 14V
PROTECTION SECTION
VSD
IDELAY
tLEB
Shutdown Feedback Voltage
Shutdown Delay Current
VFB ≥ 5.5V
5.5
2.8
6.0
3.5
6.5
4.2
V
VFB = 5V
µA
ns
Leading-Edge Blanking Time
250
FSDM0465RE VFB = 5V, VCC = 14V
FSDM0565RE VFB = 5V, VCC = 14V
FSDM07652RE VFB = 5V, VCC = 14V
1.60 1.80 2.00
2.00 2.25 2.50
2.20 2.50 2.70
ILIMIT
Peak Current Limit(11)
A
VOVP
TSD
Over-Voltage Protection
Thermal Shutdown Temperature(10)
18
19
20
V
130 145 160
°C
TOTAL DEVICE SECTION
IOP
VFB = GND, VCC = 14V
VFB = GND, VCC = 10V
VFB = GND, VCC = 18V
IOP(MIN)
IOP(MAX)
Notes:
9. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%.
Operating Supply Current(12)
2.5
5.0
mA
10. These parameters, although guaranteed at the design, are not tested in production.
11. These parameters indicate the inductor current.
12. This parameter is the current flowing into the control IC.
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Comparison Between FS6M0765RTC and FSDM0x65RE
Function
FS6M0765RTC
FSDM0x65RE
FSDM0x65RE Advantages
Gradually increasing current limit during
soft-start reduces peak current and volt-
age component stresses
Adjustable soft-start
time using an external typically 10ms (fixed)
capacitor
Internal soft-start with
Soft-Start
Eliminates external soft-start components
in most applications
Reduces or eliminates output overshoot
Built into controller Built into controller Improves light-load efficiency
Burst-Mode Operation
Output voltage
Output voltage fixed Reduces no-load consumption
drops to around half
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Typical Performance Characteristics
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100 125
150
-25
0
25
50
75
100
125
150
Junction Temperature [°C]
Junction Temperature [°C]
Figure 4. Operating Current vs. Temp.
Figure 5. Start Threshold Voltage vs. Temp.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Junction Temperature [°C]
Junction Temperature [°C]
Figure 6. Stop Threshold Voltage vs. Temp.
Figure 7. Operating Frequency vs. Temp.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Junction Temperature [°C]
Junction Temperature [°C]
Figure 8. Maximum Duty Cycle vs. Temp.
Figure 9. Feedback Source Current vs. Temp.
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Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Junction Temperature [°C]
Junction Temperature [°C]
Figure 10. Shutdown Feedback Voltage vs. Temp.
Figure 11. Shutdown Delay Current vs. Temp.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100 125
150
Junction Temperature [°C]
Junction Temperature [°C]
Figure 12. Over-Voltage Protection vs. Temp.
Figure 13. Burst-Mode Enable Voltage vs. Temp.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100 125
150
-50
-25
0
25
50
75
100 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 14. Burst-Mode Disable Voltage vs. Temp.
Figure 15. Current Limit vs. Temp.
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Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
Junction Temperature [°C]
Figure 16. Soft-Start Time vs. Temp.
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2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*) as shown in Figure 18. Assuming that
Functional Description
1.
Start-up:
In
previous
generations
of
Power Switches the VCC pin had an external start-
up resistor to the DC input voltage line. In this
generation, the start-up resistor is replaced by an
internal high-voltage current source. At start-up, the
internal high-voltage current source supplies the
internal bias and charges the external capacitor
the 0.9mA current source flows only through the internal
resistor (2.5R + R = 2.8kΩ), the cathode voltage of diode
D2 is about 2.5V. Since D1 is blocked when the feedback
voltage (VFB) exceeds 2.5V, the maximum voltage of the
cathode of D2 is clamped at this voltage, thus clamping
(Cvcc
)
connected to the VCC pin, as illustrated
VFB*. Therefore, the peak value of the current through
in Figure 17. When VCC reaches 12V, the
FSDM0x65RE begins switching and the internal high-
the SenseFET is limited.
voltage
current
source
is
disabled.
The
2.2 Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
occurs through the SenseFET, caused by primary-side
capacitance and secondary-side rectifier reverse
recovery. Excessive voltage across the Rsense resistor
FSDM0x65RE continues normal switching operation and
the power is supplied from the auxiliary transformer
winding unless VCC goes below the stop voltage of 8V.
would lead to incorrect feedback operation in the current
mode PWM control. To counter this effect, the
FSDM0x65RE employs a leading-edge blanking (LEB)
circuit. This circuit inhibits the PWM comparator for a
short time (tLEB) after the SenseFET is turned on.
VDC
CVcc
Vref
VCC
Idelay
IFB
VCC
Vstr
VFB
VO
SenseFET
3
6
OSC
4
H11A817A
D1
D2
CB
2.5R
R
Istart
+
Vfb
Gate
driver
*
Vref
KA431
-
8V/12V
VCC good
OLP
Rsense
Internal
Bias
VSD
FSDM0565RE Rev: 00
FSDM0565RE Rev: 00
Figure 18. Pulse-Width-Modulation (PWM) Circuit
Figure 17. Internal Start-up Circuit
3. Protection Circuit: The FSDM0x65RE has several
self-protective functions, such as overload protection
(OLP), over-voltage protection (OVP), and thermal
shutdown (TSD). Because these protection circuits are
fully integrated into the IC without external components,
the reliability is improved without increasing cost. Once a
fault condition occurs, switching is terminated and the
SenseFET remains off, which causes VCC to fall. When
2. Feedback Control: FSDM0x65RE employs current-
mode control, as shown in Figure 18. An opto-coupler
(such as the H11A817A) and shunt regulator (such as
the KA431) are typically used to implement the feedback
network. Comparing the feedback voltage with the
voltage across the Rsense resistor, plus an offset voltage,
makes it possible to control the switching duty cycle.
When the reference pin voltage of the shunt regulator
exceeds the internal reference voltage of 2.5V, the opto-
coupler LED current increases, pulling down the
feedback voltage and reducing the duty cycle. This event
typically occurs when the input voltage is increased or
the output load is decreased.
VCC reaches the UVLO stop voltage of 8V, the protection
is reset and the internal high-voltage current source
charges the VCC capacitor via the Vstr pin. When VCC
reaches the UVLO start voltage of 12V, the
FSDM0x65RE resumes normal operation. In this
manner, the auto-restart can alternately enable and
disable the switching of the power SenseFET until the
fault condition is eliminated (see Figure 19).
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12
Fault
occurs
FSDM0565RE Rev: 00
VFB
Fault
Power
on
VDS
removed
Overload protection
6.0V
2.5V
VCC
T12= CFB*(6.0-2.5)/Idelay
12V
8V
T1
T2
t
Figure 20. Overload Protection
t
Normal
operation
Fault
situation
Normal
operation
3.2 Over-Voltage Protection (OVP): If the secondary
side feedback circuit were to malfunction or a solder
defect caused an opening in the feedback path, the
current through the opto-coupler transistor becomes
almost zero. In this event, VFB climbs in a similar manner
FSDM0565RE Rev: 00
Figure 19. Auto Restart Operation
to the overload situation, forcing the preset maximum
current to be supplied to the SMPS until the overload
protection is activated. Because more energy than
required is provided to the output, the output voltage may
exceed the rated voltage before the overload protection
is activated, resulting in the breakdown of the devices in
the secondary side. To prevent this situation, an over-
voltage protection (OVP) circuit is employed. In general,
VCC is proportional to the output voltage and the
3.1 Overload Protection (OLP): Overload is defined as
the load current exceeding a pre-set level due to an
unexpected event. In this situation, the protection circuit
should be activated to protect the SMPS. Even when the
SMPS is in normal operation, the overload protection
circuit can be activated during the load transition. To
avoid this undesired operation, the overload protection
circuit is designed to be activated after a specified time
to determine whether it is a transient situation or a true
overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
through the SenseFET is limited, and therefore the
maximum input power is restricted with a given input
voltage. If the output consumes beyond this maximum
power, the output voltage (VO) decreases below the set
FSDM0x65RE uses VCC instead of directly monitoring
the output voltage. If VCC exceeds 19V, an OVP circuit is
activated, resulting in the termination of the switching
operation. To avoid undesired activation of OVP during
normal operation, VCC should be designed below 19V.
3.3 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This makes it easy
for the control IC to detect the heat generation from the
SenseFET. When the temperature exceeds ~150°C, the
thermal shutdown is activated.
voltage. This reduces the current through the opto-
coupler LED, which also reduces the opto-coupler
transistor current, thus increasing the feedback voltage
(VFB). If VFB exceeds 2.5V, D1 is blocked and the 3.5µA
current source starts to charge CB slowly up to VCC. In
this condition, VFB continues increasing until it reaches
4. Soft-Start: The FSDM0x65RE has an internal soft-
start circuit that increases PWM comparator inverting
input voltage, together with the SenseFET current,
slowly after it starts up. The typical soft-start time is
10ms. The pulse width to the power switching device is
progressively increased to establish the correct working
conditions for transformers, inductors, and capacitors.
The voltage on the output capacitors is progressively
increased with the intention of smoothly establishing the
required output voltage. It also helps prevent transformer
saturation and reduces the stress on the secondary
diode during start-up.
6V, when the switching operation is terminated, as
shown in Figure 20. The delay time for shutdown is the
time required to charge CB from 2.5V to 6.0V with 3.5µA.
A 10 ~ 50ms delay time is typical for most applications.
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13
5. Burst Operation: To minimize power dissipation in
standby mode, the FSDM0x65RE enters burst-mode
operation. As the load decreases, the feedback voltage
decreases. As shown in Figure 21, the device
automatically enters burst mode when the feedback
voltage drops below V
(500mV). At this point,
BURL
switching stops and the output voltages start to drop at a
rate dependent on standby current load. This causes the
feedback voltage to rise. Once it passes V
(700mV),
BURH
switching resumes. The feedback voltage then falls and
the process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
Vo
set
VO
VFB
0.7V
0.5V
IDS
VDS
time
Switching
disabled
Switching
disabled
T4
T2 T3
T1
FSDM0565RE Rev: 00
Figure 21. Waveforms of Burst Operation
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14
Application Information
Application
Output Power
40W
Input Voltage
Output Voltage (Max. Current)
Universal input
5V (2.0A)
12V (2.5A)
LCD Monitor
(85-265V
)
AC
Features
High efficiency (>81% at 85V input)
AC
Low zero load power consumption (<300mW at 240V input)
AC
Low standby mode power consumption (<800mW at 240V input and 0.3W load)
AC
Low component count
Enhanced system reliability through various protection functions
Internal soft-start (10ms)
Key Design Notes
Resistors R102 and R105 are employed to prevent start-up at low input voltage. After start-up, there is no power
loss in these resistors since the start-up pin is internally disconnected after start-up.
The delay time for overload protection is designed to be about 50ms with C106 of 47nF. If a faster triggering of OLP
is required, C106 can be reduced to 10nF.
Zener diode ZD102 is used for a safety test, such as UL. When the drain pin and feedback pin are shorted, the
zener diode fails and remains short, which causes the fuse (F1) to be blown and prevents explosion of the opto-cou-
pler (IC301). This zener diode also increases the immunity against line surge.
1. Schematic
D202
MBRF10100
T1
EER3016
L201
12V, 2.5A
10
1
2
C202
1000μF
25V
C201
1000μF
25V
C104
2.2nF
1kV
R103
56kΩ
2W
8
R102
D101
30kΩ
C103
100μF
400V
UF 4007
3
R105
40kΩ
BD101
2
IC1
FSDM0565RE
2KBP06M3N257
6
Vstr
1
1
3
3
Drain
VCC
5
4
D201
MBRF1045
L202
NC
FB
5V, 2A
4
7
4
ZD102
10V
D102
UF4004
R104
5Ω
C204
1000μF
10V
GND
2
C105
22μF
C203
1000μF
10V
6
C106
47nF
50V
C102
220nF
275VAC
ZD101
22V
50V
5
C301
4.7nF
LF101
23mH
R201
1kΩ
R101
560kΩ
1W
R204
5.6kΩ
R202
1.2kΩ
R203
12kΩ
C205
47nF
IC301
H11A817A
IC201
KA431
F1
C101
220nF
275VAC
RT1
5D-9
FUSE
250V
2A
R205
5.6kΩ
FSDM0565RE Rev: 00
Figure 22. Demo Circuit
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15
2. Transformer
EER3016
1
10
9
Np/2
Np/2
N12V
2
3
4
5
8
7
N5V
6
Na
FSDM0565RE Rev: 00
Figure 23. Transformer Schematic Diagram
3. Winding Specification
No
Pin (s→f)
4 → 5
Wire
0.2φ × 1
Turns
Winding Method
N
8
Center Winding
a
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N /2 2 → 1
0.4φ × 1
Insulation: Polyester Tape t = 0.050mm, 2 Layers
10 → 8
0.3φ × 3
Insulation: Polyester Tape t = 0.050mm, 2 Layers
7 → 6
0.3φ × 3
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N /2 3 → 2
0.4φ × 1
18
7
Solenoid Winding
Center Winding
Center Winding
Solenoid Winding
p
N
12V
N
3
5V
18
p
Outer Insulation: Polyester Tape t = 0.050mm, 2 Layers
4. Electrical Characteristics
Pin
Specification
520µH ± 10%
10µH Max
Remarks
Inductance
1 - 3
1 - 3
100kHz, 1V
nd
Leakage Inductance
2
all short
5. Core & Bobbin
Core: EER 3016
Bobbin: EER3016
Ae(mm2): 96
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16
6. Demo Circuit Part List
Part
Value
Note
Part
D102
D201
D202
ZD101
ZD102
Value
Note
Fuse
NTC
UF4004
F101
2A/250V
MBRF1045
MBRF10100
Zener Diode
Zener Diode
22V
10V
RT101
5D-9
Resistor
Bridge Diode
BD101 2KBP06M 3N257
R101
R102
R103
R104
R105
R201
R202
R203
R204
R205
560kΩ
30kΩ
56kΩ
5Ω
1W
Bridge Diode
Wire 0.4mm
1/4W
2W
Line Filter
1/4W
1/4W
1/4W
1/4W
1/4W
1/4W
1/4W
LF101
23mH
40kΩ
1kΩ
IC
Power Switch (5A,650V)
Voltage reference
Opto-coupler
1.2kΩ
12kΩ
5.6kΩ
5.6kΩ
IC101
IC201
IC301
FSDM0565RE
KA431 (TL431)
H11A817A
Capacitor
C101
C102
C103
C104
C105
C106
C201
C202
C203
C204
C205
C301
220nF/275V
Box Capacitor
AC
AC
220nF/275V
Box Capacitor
100µF/400V
2.2nF/1kV
22µF/50V
47nF/50V
1000µF/25V
1000µF/25V
1000µF/10V
1000µF/10V
47nF/50V
4.7nF
Electrolytic Capacitor
Ceramic Capacitor
Electrolytic Capacitor
Ceramic Capacitor
Electrolytic Capacitor
Electrolytic Capacitor
Electrolytic Capacitor
Electrolytic Capacitor
Ceramic Capacitor
Polyester Film Cap.
Inductor
L201
L202
5µH
5µH
Wire 1.2mm
Wire 1.2mm
Diode
D101
UF4007
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17
7. Layout
Figure 24. Layout Considerations for FSDM0565RE (Top View)
Figure 25. Layout Considerations for FSDM0565RE (Bottom View)
www.onsemi.com
18
Package Dimensions
Figure 26. TO-220F-6L (Forming)
www.onsemi.com
19
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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