FSFR1800XSL_技术文档

DATA SHEET

www.onsemi.cn

✈ꢀꢁᩅᛠᔏᨼᕂꢂŔꢃ╧ꢄꢅ

FSFR-XS

ߋ

ꢆ

ᛄ៮

SIP9 26x10.5

CASE 127EM

FSFR-XS

ߋ

ϷӥᓌꢀႆꢁᏰŔꢀ⁰რꢀ，ꢁꢂꢀᜨ╧Ԫᩅᛠ

ᔏᨼᕂ

ࡈ

૜ᚎᙱ。ൣᖰŻᥤლ

׏

∰、ᄚɅŔᛠᔏᨼᕂ

ࡈ

ᐠ⇐Ŕ

⛰ϧ，FSFR-XS

ߋ

Ϸ⛽¥ِӶfᚎᙱ，

׬

៖ᖰꢀf⛿

ѻ٬ሇ

்。FSFR-XS

ߋ

Ϸ෦ꢃPower MOSFET ⛾ᇋ᫯ቂ૭५ĳlᥡ

ٱ

、

ꢀƇ᧥ᥡ╁҈ꢀᢿ、

ގ

̾ꢀἡᖇЖŔᔏั

ࡈ

、⍡╧℠Жꢀᢿ、

ᨿ؏҈٬

ͥਾƽᒄѿ்᝔

ר

ई⛰ᡇ。ꢀƇ᧥ᥡ╁҈ꢀᢿ͗ᣩ͑

ᰁ

ࡊ

ૐ Ὠ ℴ ѿ ் ， ᫪ ᪗ Գ ᡚ Ŕ ᑷ

ࡊ

் ѻ ̾ ƽ ᪠ ጜ ԃ ൺ 。

MOSFETꢃŔᇋ᫯ቂ૭ĳlᥡ

׏ٱ

ᖰꢀ

׏

∰ሇ，ℂᵂტဘᚭļእ

ΕŔֱ⛿，

׬

៖்֨෦֭

ױ

ቂ૭Ŕᅑ

ڭ

ℝೃᣠĮ。ş✈⇆ꢀի

რꢀꢃ(ZVS) ᑠᤏ

׏

᠞༧ℝĮრꢀᔿ૧ၖᖰꢀᜨ╧。ZVS ᪨

׏

᠞

༧ℝĮრꢀ

ࡊ

ૐ，̡ᚈş✈෯บෘŔꢀΑၒᑐ (EMI) ⃄Ể

ࡈ

。

SIP9 26x10.5

CASE 127EN

⑙ꢇ

•ꢄꢂԪᩅᛠᔏᨼᕂ

ࡈ

ᒳᐱᖰŻf 50% ՀՊᶴŔָ⍡ᖇЖ

•ꢄ᫪᪗⇆ꢀիრꢀ (ZVS) ൾ▐ꢀᜨ╧

•ꢄ͗ᣩᇋ᫯ቂ૭ĳlᥡ

ٱ

Ŕͥ᮸ UniFETt

•ꢄꢂ MOSFET øӶŔ

ࣚ

ൺᵛԚ៖⃄ (350 ns)

•ꢄ࿅ļ⍡╧ᣠꢀ

׏

᪎ 300 kHz

MARKING DIAGRAM

$Y&Z &3&K

XXXXXXXXXX

•ꢄЉ✈૶᮸ LVCC ൾ▐ᐠᣩƽᒄŔ಺҈Ო؏҈ᚭļ

•ꢄƽᒄѿ் ᪗իƽᒄ (OVP)、᪗ἡƽᒄ (OCP)、ტဘ᪗ἡƽᒄ

(AOCP)、ͥ᮸⋍ꢀឍ (TSD)

$Y

&Z

&3

&K

= onsemi Logo

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digits Lot Run Traceability Code

ꢈ✈

XXXXXXXXXX= Device Code

•ꢄؙҋര (PDP) ⛾ᾒᡖ (LCD) ꢀᒖ

•ꢄ

א

ჯᙱ٧ᤚ

⛾ᣭҁ

ࡈ

•ꢄ᫒ᰝ

ࡈ

ORDERING INFORMATION

•ꢄ᫪ǁꢀ⁰

See detailed ordering and shipping information on page 2 of

this data sheet.

ǈꢅ᠔⁰

AN−4151 − ş✈ꢃFSFRꢃ

ߋ

Ϸѿ╧რꢀŔԪᩅ LLCꢃᛠᔏᨼᕂ

ࡈ

ᚎᙱ

1

Publication Order Number:

January, 2022 − Rev. 2

FSFR2100XSCN/D

ᙲ៽ꢉꢊ

ꢐꢑᝃ⋍␧Ŕᣠꢒᩣꢓꢃ╧

ꢑᝃ⋍␧Ŕᣠꢒᩣꢓꢃ╧

(V = 350~400 V) (ꢀꢁ 1, 2) (V = 350~400 V) (ꢀꢁ 1, 2)

ꢂꢋ০ꢌ

ꢍ᎕

ꢎꢏণꢀ

R

IN

DS(ON_MAX)

FSFR2100XS

FSFR1800XS

FSFR1700XS

FSFR1600XS

FSFR2100XSL

FSFR1800XSL

FSFR1700XSL

FSFR1600XSL

9−SIP

-40 ꢂ +130°C

0.51 W

180 W

120 W

100 W

80 W

400 W

260 W

200 W

160 W

400 W

260 W

200 W

160 W

0.95 W

1.25 W

1.55 W

0.51 W

0.95 W

1.25 W

1.55 W

9-SIP

L-ꢃꢄ

180 W

120 W

100 W

80 W

1. ꢅꢆꢇꢈꢀꢉꢊꢋꢁꢂꢌ。

2. 50°C ꢍꢎꢆꢏꢐꢑꢒꢓꢔꢕꢃꢖꢉꢊꢗꢘꢙꢚꢂꢌ。

ꢈ✈ꢁᢿꢔ

Cr

V_IN

V_CC

V_O

LV _CC

V_DL

HV_CC

R_MIN

R_T

R_MAX

R_SS

V_CTR

AR

C_SS

CS

SG

PG

ꢔ 1. ꢕꢖꢈ✈ꢁᢿ (LLC ᛠᔏꢁᩅᨼᕂꢂ)

www.onsemi.cn

2

ᨦꢔ

LV_CC

V_DL

1

7

V_REF

9

HV_CC

I_RT

LV_CCgood

Internal

Bias

V_REF

3 V

1 V

S

R

I_RT

Q

2I_RT

2 V

LUV+ / LUV−

HUV+ / HUV−

Level

High−Side

Time

Shifter

3

2

Gate Driver

R_T

Delay

10

V_CTR

350 ns

Divider

Balancing

Delay

Low−Side

Gate Driver

AR

Time

Delay

350 ns

V_CssH/ V_CssL

5 k

S

Q

R

Shutdown

LV_CCgood

TSD

V_AOCP

LV_CC

V_OVP

Delay

50 ns

6

5

PG

SG

V_OCP

Delay

1.5 ms

−1

4

CS

ꢔ 2. ꢗ᮸ᨦꢔ

www.onsemi.cn

3

ꢘ௪ꢙꢚ

1

V_DL

2

3

R_T

4

5

6

7

8

9

10

V

SG LVcc

AR

CS

PG

HVcc

ꢔ 3. ꢍ᎕ꢔ

ꢘ௪ꢛꢜ

ꢘ௪ꢌ

ꢝӀ

ᛄ៮

ꢛꢜꢝƇMOSFET ꢖꢞꢟ，᫪ဘ᪮ᖅꢂꢝիǄἡꢋͅ。

1

2

V

DL

AR

ᵄჵ௪✈nईÛĵƽᒄᤚꢀ፻ᒶֱꢐෙ૶᮸ᨿ؏҈ꢠ඙᜞ꢠ。ᄳᵄჵ௪ꢖꢠիℝꢂ 0.2 V ꢐ，

෦૭ĭᐠᣩƽᒄၖ✄ᖇꢀ

ࡈ

ͭᴁꢑ஫࿅ļ。

3

4

R

ᚵჵ௪✈n০ӛꢑ͓⍡ꢌ。⛰೼ऐ，⇐ᑑ̩ꢡ᪮ᖅАᚵჵ௪，✈᥅ᛓ൒ꢋꢁꢠիꢖꢑ͓⍡ꢌ。

ᵄჵ௪᪠ἫἡটĮƇMOSFET ꢖꢠἡ。͘ꢄऐ，៯ꢠի፻ឝҀАᚵჵ௪。

ᚵჵ௪ꢄᖇꢀऐ。

T

CS

SG

PG

5

6

ᚵჵ௪ꢄꢠ⁰ऐ。ᚵჵ௪᪮ᖅАĮƇMOSFET ꢖ⁰ꢟ。

ᚵჵ௪ꢄᖇꢀIC ꢖŻꢠꢠի。

7

LV

CC

8

NC

ៀ᪮ᖅ。

9

HV

ꢛꢜꢝƇ᧥ꢟ╁҈ꢠᢿ IC ꢖꢠ⁰ꢠի。

CC

10

V

CTR

ꢛꢜĮƇMOSFET ꢖꢞꢟ。͘ꢄऐ，ָի

ࡈ

᪮ᖅАᚵჵ௪。

www.onsemi.cn

4

ভෙᣠꢒ⍭ꢛȜ(T = 25°C，ℴ∮

׆

ᣩᛄ៮。)

A

׶

ꢌ

֢ᝐ

ᣠ෯Ȝ ᣠꢒȜ

Եĭ

V

DS

ꢉꢊꢞꢟꢂ⁰ꢟꢠի(V -V

٬

V -PG)

CTR

500

−0.3

−5.0

−0.3

−

DL CTR

LV

CC

ĮƇꢠ⁰ꢠի

25.0

525.0

V

ꢂ

HV

V

ꢝƇV ჵ௪ꢂĮƇꢞꢟꢠի

V

CC

CTR

CC

HV

ꢝƇ὎҈ꢠ⁰ꢠի

V

CC

V

AR

಺҈Ო؏ჵ௪ꢋͅꢠի

ꢠἡዿἫ (CS) ჵ௪ꢋͅꢠի

LV

CC

V

CS

1.0

V

RT

R

T

ჵ௪ꢋͅꢠի

5.0

50

V

dV

CTR

/dt

̡ᚈꢖĮƇMOSFET ꢞꢟꢠիիᘦꢌ

(ꢀꢁ 3)

ማꢂ૧

V/ns

W

P

D

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

−

12.0

11.7

11.6

11.5

+150

+130

+150

−

°C

ꢉꢊꢅꢆ (ꢀꢁ 4)

ᖈภꢖ࿅ļꢅꢆ (ꢀꢁ 4)

സʈꢆꢏී

ࣔ

−

T

J

−40

−55

T

STG

MOSFET ᮸Ϧ

V

ꢞꢟ᧥ꢟꢠի (R = 1 MW)

500

−

30

V

A

DGR

GS

V

᧥ꢟ⁰ꢟ (GND) ꢠի

௙Βꢞꢠἡ (ꢀꢁ 5)

GS

I

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

FSFR2100XS/L

−

32

DM

−

23

−

20

−

18

I

D

᪮ꢚꢞꢟꢠἡ

T

C

T

C

T

C

T

C

T

C

T

C

T

C

T

C

= 25°C

= 100°C

= 25°C

= 100°C

= 25°C

= 100°C

= 25°C

= 100°C

−

10.5

6.5

7.0

4.5

6.0

3.9

4.5

2.7

A

−

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

−

ꢍ᎕᮸Ϧ

ᑍʹ

ლᙾኊ᧳ᑍʹ

5~7

kgf·cm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(֢૓ᚡᝧ)

ୢ᥼ꢠիᡕ᪗ꢉꢊ⍭ൺȜጸꢃϷꢁꢖȜී

ࣔ

，

ࡈ

Öꢇ்úᔿय。ୢ᥼ᡕ᪗Ûĵꢛ{ꢈȜ，෦ៀẵƽᚑ

ࡈ

Öꢂ்，ꢇ்úොೄ

ࡈ

Öᔿय，ᅑ

ڭ

ꢇ∰ሇ。

3. ᶯꢅMOSFET (ꢆꢅMOSFET ᯍො᫪)。

4. ᐠᖈภꢖ࿅ļ൒ꢆꢉꢊȜַꢈn⋍ƽᒄꢂ்。

5. ௙Βඝꢏַꢈnꢉꢊꢅꢆ。

www.onsemi.cn

5

⋍ℋἫᚥ (T = 25°C，ℴ∮

׆

ᣩᛄ៮。)

A

׶

ꢌ

֢ᝐ

ᝐȜ

10.44

10.68

10.79

10.89

80

Եĭ

q

ꢅꢢꢃᆣ⋍ℋ (ꢆꢅMOSFET ො᫪ꢐ)

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

FSFR XS

ߋ

Ϸ

°C/W

JC

q

൒-ꢍꢎ+⃄⋍ℋ

°C/W

JA

ꢁᷴ⑙ꢇ(T = 25°C，ℴ∮

׆

ᣩᛄ៮。)

A

׶

ꢌ

֢ᝐ

Ἣᚥ᥁ꢋ

ᣠ෯Ȝ ꢕꢖȜ ᣠꢒȜ

Եĭ

V

MOSFET ᮸Ϧ

BV

ꢞꢟꢂ⁰ꢟϛՏ ꢠի

500

−

I

= 200 mA, T = 25°C

DSS

D

A

= 200 mA, T = 125°C

540

0.41

0.77

1.00

1.25

120

−

D

A

R

ො᫪ꢠℋ

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

FSFR2100XS/L

V

= 10 V, I = 6.0 A

−

0.51

0.95

1.25

1.55

−

W

DS(ON)

GS

D

= 10 V, I = 3.0 A

−

D

= 10 V, I = 2.0 A

−

D

= 10 V, I = 2.25 A

−

D

t

rr

ĳlꢟ

ٱ

֭

ױ

ቂ૭ꢐ⃄

(ꢀꢁ 6)

= 0 V, I

= 10.5 A,

−

ns

Diode

dI

/dt = 100A/ms

Diode

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

V

= 0 V, I

Diode

= 7.0 A,

−

160

90

−

GS

Diode

dI

/dt = 100 A/ms

V

= 0 V, I

Diode

= 6.0 A,

GS

Diode

dI

/dt = 100 A/ms

V

= 0 V, I

Diode

= 4.5 A,

GS

Diode

dI

/dt = 100 A/ms

C

ꢋͅꢠ඙ (ꢀꢁ 6)

ꢋꢁꢠ඙ (ꢀꢁ 6)

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

FSFR2100XS/L

FSFR1800XS/L

FSFR1700XS/L

FSFR1600XS/L

V

= 25 V, V = 0 V,

−

1175

639

512

412

155

82.1

66.5

52.7

−

pF

ISS

DS

GS

f = 1.0 MHz

C

V

= 25 V, V = 0 V,

OSS

DS GS

f = 1.0 MHz

ꢁ⁰᮸Ϧ

I

ȯਾꢞꢠἡ

HV = V = 500 V

CTR

−

50

100

6

50

120

200

9

mA

LK

CC

I HV

HV ∩ᇡꢠ⁰ꢠἡ

(HV UV+) − 0.1 V

CC

Q

CC

I LV

LV ∩ᇡꢠ⁰ꢠἡ

CC

(LV UV+) − 0.1 V

mA

Q

CC

I HV

࿅ļHV ꢠ⁰ꢠἡ (RMS Ȝ)

f = 100 kHz

OSC

mA

O

CC

ៀꢑ͓

= 100 kHz

100

7

200

11

I LV

࿅ļLV ꢠ⁰ꢠἡ (RMS Ȝ)

f

OSC

mA

O

CC

ៀꢑ͓

2

4

www.onsemi.cn

6

ꢁᷴ⑙ꢇ(T = 25°C，ℴ∮

׆

ᣩᛄ៮。) (continued)

A

׶

ꢌ

֢ᝐ

Ἣᚥ᥁ꢋ

ᣠ෯Ȝ ꢕꢖȜ ᣠꢒȜ

Եĭ

UVLO ᮸Ϧ

LV UV+

LV ꢠ⁰ᴀիᵃ

ױ

⃘Ȝ(LV ؏҈)

11.2

8.9

−

12.5

10.0

2.50

9.2

13.8

11.1

−

V

CC

LV UV−

CC

LV ꢠ⁰ᴀի៯

ױ

⃘Ȝ(LV ȼᵂ)

CC CC

LV UVH LV ꢠ⁰ᴀի₾

ࢾ

CC

HV UV+ HV ꢠ⁰ᴀիᵃ

ױ

⃘Ȝ(HV ؏҈)

8.2

7.8

−

10.2

9.6

−

CC

HV UV− HV ꢠ⁰ᴀի៯

ױ

⃘Ȝ(HV ȼᵂ)

8.7

CC

HV UVH HV ꢠ⁰ᴀի₾

ࢾ

0.5

CC

ᔏัꢂ⛾֭⑘᮸Ϧ

V

V-I ᨼᕂ

ࡈ

⃘Ȝꢠի

ꢋꢁᔏั⍡ꢌ

R = 5.2 kW

1.5

94

48

−

2.0

100

50

2.5

106

52

−

V

RT

T

f

kHz

%

OSC

DC

ꢋꢁՀՊᶴ

f

SS

t

SS

ͥ᮸ᨿ؏҈Ͻ஫⍡ꢌ

ͥ᮸ᨿ؏҈ꢐ⃄

f

SS

= f

OSC

+ 40 kHz, R = 5.2 kW

140

3

kHz

ms

T

2

4

ƽᒄ᮸Ϧ

V

ꢑ஫ꢠիꢂ᜞ꢠ C

0.9

0.16

21

1.0

0.20

23

1.1

0.24

25

V

CssH

SS

V

̥ꢠ C

٬Ო؏ꢖꢑ஫ꢠ

ի

SS

CssL

V

LV ᪗իƽᒄ

CC

LV > 21 V

CC

V

OVP

V

AOCP ⃘Ȝꢠի

−1.0

−

−0.9

50

−0.8

−

V

AOCP

t

AOCP ὨⅠꢐ⃄ (ꢀꢁ 6)

OCP ⃘Ȝꢠի

V

CS

V

CS

< V

ns

V

BAO

AOCP

V

−0.64

1.0

−

−0.58

1.5

−0.52

2.0

OCP

t

OCP ὨⅠꢐ⃄ (ꢀꢁ 6)

ms

ns

°C

BO

OCP

t

ზ᪯ꢐ⃄（ĮƇ）®V

᪠ἫА͓ឍ (ꢀꢁ 6)

AOCP

250

135

400

150

DA

T

⋍͓₽ꢆꢏ (ꢀꢁ 6)

120

SD

ᵛԚ៖⃄ᖇЖ᮸Ϧ

ᵛԚꢐ⃄ (ꢀꢁ 7)

D

−

350

−

ns

T

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(֢૓ᚡᝧ)

ℴ∮

׆

ᣩᛄ៮，“ꢠᷴ⑙ሇ”ጸ᨜ꢃϷꢁꢖꢜᐠϷἫᚥ᥁Ö⛻ꢖ

ڡ

ሇ்֢ᝐ。ୢ᥼ई⛽

׬

᥁Ö⛻ꢣጜ，

ڡ

ሇ்ꢇ்⛾“ꢠᷴ⑙ሇ”ጸ᨜

ꢃᐠϷሇ்֢ᝐ⛽⛰ೄ。

6. ᚵ֢ᝐꢤꢔꢕƽᚑ；ꢥট

ڡ

Ἣᚥ

7. ꢛ{֢ᝐꢦ

ٱ

ট᪗ƽᚑ，?¥ई EDS (ꢧꢨἫᚥ) ᪗ӛꢃἫᚥ。

www.onsemi.cn

7

ꢕꢖꢇ்⑙ᅡ

(ꢛ{⑙ሇꢩई T = 25°C ⛻ꢪΦӶ。)

A

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

−25

0

25

50

75

100

−50

−25

0

25

50

75

100

Temp (°C)

ꢔ 4. ĮƇMOSFET ՀՊᶴ⛾ꢀႆŔꢅ

ߋ

ꢔ 5. ꢄꢅ⍡╧⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

−50

−25

0

25

50

75

Temp (°C)

ꢔ 6. ▨ƇV_CC(HV_CC) ؏҈⛾ꢀႆŔꢅ

ߋ

ꢔ 7. ▨ƇV_CC(HV_CC) ȼᵂ⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.05

1

0.95

0.9

−50

−25

0

25

50

75

−25

0

25

50

75

Temp (°C)

ꢔ 8. ĮƇV_CC(LV_CC) ؏҈⛾ꢀႆŔꢅ

ߋ

ꢔ 9. ĮƇV_CC(LV_CC) ȼᵂ⛾ꢀႆŔꢅ

ߋ

www.onsemi.cn

8

ꢕꢖꢇ்⑙ᅡ(ᖅ⛺ꢫ)

(ꢛ{⑙ሇꢩई T = 25°C ⛻ꢪΦӶ。)

A

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

−25

0

25

50

75

100

−50

−25

0

25

50

75

100

Temp (°C)

ꢔ 10. LV_CCOVP ꢁꢞ⛾ꢀႆŔꢅ

ߋ

ꢔ 11. R_Tꢁꢞ⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

1.1

1.05

1

0.95

0.9

−50

0.9

−25

0

25

50

75

−50

−25

0

25

50

75

100

Temp (°C)

ꢔ 12. V_CssL⛾ꢀႆŔꢅ

ߋ

ꢔ 13. V_CssH⛾ꢀႆŔꢅ

ߋ

1.1

1.05

1

0.95

0.9

−50

−25

0

25

50

75

Temp (°C)

ꢔ 14. OCP ꢁꢞ⛾ꢀႆŔꢅ

ߋ

www.onsemi.cn

9

ꢃ்ᛄ៮

Gain

1.8

ꢟᤌᚭꢏ

FSFR-XSꢃ

ߋ

Ϸᚎᙱꢂ╁҈ꢀƇ

٬

ĮƇ MOSFET，

פ

Հꢃ50% ՀՊᶴ。ई᪮ঽᨼᕂ᣿⃄ჵͅf

ࣚ

ൺᵛԚ៖⃄

350ꢃns，ୢ

ࣞ

15 ᐠЊ。

max

min

normal

ISS

f

1.6

1.4

1.2

1.0

0.8

0.6

Dead−Time

High−Side

MOSFET

Gate Drive

Low−Side

MOSFET

Gate Drive

Soft−Start

Time

ꢔ 15. MOSFET᧥ᥡ╁҈ꢉꢌ

60 70 80 90 100 110 120 130 140 150

Frequency (kHz)

ꢗ᮸ᔏัꢂ

FSFR-XSꢃ

ߋ

ϷᲗ✈ꢀἡᖇЖŔᔏั

ࡈ

，ୢ

ࣞ

16ꢃᐠ

ꢔ 17. ᛠᔏᨼᕂꢂꢕꢖꢠƚᣒএ

Њ。ईͥ᮸，R ჵ௪Ŕꢀիᛓ൒ई 2 V，ၖ✄ᔏั

ࡈ

T

ꢀ඙ C Ŕ̥ꢀ/᜞ꢀꢀἡ᫪᪗ş✈ꢀἡ ʯ૭Ж® R

T

LV_CC

VDL

ჵ௪ (I

) ἡϚŔꢀἡ᥅ງᅷ。

ࣀ

ᵄ，რꢀ⍡╧⅟Ȑ

CTC

Ŕ੾Ҁ૜੾Ҁ。

I

CTC

I_CTC

V_REF

+

−

+

−

S

R

Q

R_T

3 V

1 V

−Q

I_CTC

2I _CTC

R_max

R_min

R_ss

C_ss

C _T

F/F

AR

CS

+

−

2 V

R_T

Divider

Gate Drive

3

PG

SG

ꢔ 16. ꢁἡᖇЖŔᔏัꢂ

ꢔ 18. ⍡╧ᖇЖꢁᢿ

⍡╧ᚎਾ

ꢂfℂᵂई؏҈ꢃᶕ，Βϛꢀἡ᪗ଇ，ᩣϚꢀի᪗

Β，⇐ᑑꢄ῰੾Ҁᚵᛠᔏᨼᕂ

ࡈ

Ŕꢀի੾ƚ。ꢂnᛠ

ᔏᨼᕂ

ࡈ

Ŕꢀի੾ƚ⛾რꢀ⍡╧Ᏸ֭ᶴ，

ࣀ

ᵄ᫪᪗®

ࣞ

17ꢃ᠞Њᛠᔏᨼᕂ

ࡈ

Ŕ͘५ꢀի੾ƚᣒএ，͖ꢅ੾

ƚ⛾ ZVSꢃԚꢅŔრꢀ⍡╧Ᏸ֭ᶴ。ᩣϚꢀի

׏

᫪᪗ᛓ

Жრꢀ⍡╧᥅ᛓ൒。

ࣞ

18ꢃ᠞Њ R ꢃჵ௪Ŕ͘५ꢀᢿᰝ

ਾ，͖ꢅ̩ꢀꢁ

ࡈר

ꢀℋ᪮ᖅೃ R ꢃჵ௪ÅᛓЖრꢀ

⍡╧。

ISS

T

Ͻ஫ꢀ⍡╧ (f )ꢃ

ױ

⛻ᑋᖯრꢀ⍡╧Ǆೃლ֛ᩣϚꢀ

T

ի，᥅ൾឝᨿ؏҈。᫪᪗ई R ꢃჵ௪⛺᪮ᖅ R-Cꢃ

ߋ

Ϸ

T

ਡব᥅ლ֛ᨿ؏҈ꢀᢿ，ୢ

ࣞ

18ꢃᐠЊ。FSFR-XSꢃ

ߋ

Ϸ?ᣩ⛰ꢆ 3 msꢃŔͥ᮸ᨿ؏҈᥅ℝĮϽ஫

و

᣿᪗ӛꢅ

Ŕꢀἡ᪗Β，ꢅฑ

ױ

૶᮸ᨿ؏҈ꢀᢿŔϽ஫⍡╧ꢅ੾

Ҁf 40 kHz，ୢ

ࣞ

19ꢃᐠЊ。ᨿ؏҈ŔϽ஫⍡╧ꢂ⛻

ჯ঩Ϛ：

ᣠ෯რꢀ⍡╧ꢂ⛻ჯ̾ൺ：

5.2 kW

f^min

+

100 (kHz)

(eq. 1)

R_min

ȧൺ̩ꢀꢁ

ࡈר

ꢀℋŔꢂ

٬ꢀի

ꢂ 0.2 V，Ϲᣠଇრ

ꢀ⍡╧ꢂ⛻ჯ̾ൺ：

5.2 kW 5.2 kW

f^ISS

)

100 ) 40 (kHz)

₊ǒ

Ǔ

(eq. 3)

5.2 kW 4.68 kW

R_min

R_SS

f^max

)

100 (kHz)

₊ǒ

Ǔ

(eq. 2)

R_min

R_max

www.onsemi.cn

10

(a) (b)

(a) (b)(a) (b)

᫪ဘ෦ᨿ؏҈ŔϽ஫⍡╧ᚎਾꢂᛠᔏਡবŔᛠᔏ⍡

╧ (fo)ꢃŔꢇೃ⛹ǭ。ᨿ؏҈៖⃄᠏ RCꢃ៖⃄ဘᝐŔ⛹

ೃ

ࢻ

ǭ。

LV_CC

V_AR

RC ៖⃄ဘᝐꢂ：

V_CssH

V_CssL

t + R_SS@ C_SS

(eq. 4)

I_Cr

f_s

f ^ISS

t_stopt_S/S

40 kHz

(a) Protections are triggered, (b) FSFR−US restarts

ꢔ 21. ಺҈Ო؏ᚭꢏ

Control Loop

Take Over

ƽᒄꢁᢿ

FSFR-XS

ߋ

Ϸ͗ᣩૺꢆ಺Ᏹƽᒄѿ்，ୢ᪗ἡƽᒄ

(OLP)、ტဘ᪗ἡƽᒄ (OCP)、᪗իƽᒄ (OVP)ꢃ

٬⋍

ꢀឍ (TSD)。ꢅ{ƽᒄꢂ಺҈Ო؏ᰁჯƽᒄ，ୢ

ࣞ

22

ᐠЊ。

Time

ꢔ 19. ᨿ؏҈Ŕ⍡╧ꢡᖯ

⛰ ំ ᪠ Ἣ А ᜥ ꢆ እ Ε ， რ ꢀ ᚭ ļ Փ ঘ ᵂ ၖ ✄

MOSFETꢃƽᓡꢀឍ。ᄳ LVccꢃℝೃ 10 VꢃŔ LVccꢃȼᵂ

ꢀի᏶ AR ǁ

ח

ꢂꢀꢀၓ៖，෦૭ĭƽᒄ。ᄳ LVcc

᪎А 12.5 V Ŕ؏҈ꢀի៖，FSFR-XS ቂ૭ᵃဘᚭļ。

಺҈Ო؏

Փşş✈૶᮸ꢀ⁰ꢀի᥅ᒶֱÛĵͥਾƽᒄ，

FSFR-XSꢃ

ߋ

Ϸ?

׏

಺҈Ო؏。ୢ

ࣞ

20ꢃ

٬

ࣞ

21ꢃꢅ

׏

Ǜ

Ϛ，⛰ំᒶֱÛĵƽᒄ，M1ꢃრꢀ෦ᖅ᫪ၖ✄ V-Iꢃᨼ

LV_CC

7

ᕂ

ࡈ

፻ё✈。C რ஫᜞ꢀ，Ǆೃ C ⛺Ŕ V ℝೃ

SS

Css

V

。⌖

׮

，ᐠᣩƽᒄ૭ĭ，M1ꢃꢀឍ，ၖ✄

׬

៖

CssL

+

LV good

CC

Internal

Bias

V-Iꢃᨼᕂ

ࡈ

ቂ૭。 FSFR-XSꢃͭᴁ᫪᪗ᨿ؏҈რ஫რꢀ

ᚭļ。ୢ᥼ई V ꢃ૤n V ꢃ

٬

V ꢃꢀၓÅ⛻៖ᒶ

ֱƽᒄ，෦֛Փঘᵂრꢀᚭļ，V ꢃষঽ੾ଇǄೃ᪎

V_REF

−

10 / 12.5 V

Css

CssL

CssH

Auto−Restart

Protection

Css

OCP

AOCP

OVP

А V

，⌖

׮

C ፻ M1 ᜞ꢀ。

Switching

Shutdown

CssH

SS

S

Q

TSD

R −Q

LV_CCgood

F/F

+

−

2 V

‘H’ = disable

R_T

+

2

AR

3

2

V_CssH/ V_CssL

−

AR Signal

V−I Converter

R_min

R_ss

C_ss

AR

+

−

ꢔ 22. ƽᒄᨦꢔ

V_CssH

/ V_CssL

5k

Switching

Shutdown

᪗ἡƽᒄ (OCP)

M1

ᄳዿἫჵ௪ꢀիℝೃĮnꢃ-0.58 Vꢃ៖，ᒶֱ OCPꢃၖ

✄ MOSFETꢃƽᓡꢀឍ。ᵄƽᒄ͗ᣩ 1.5ĂmsꢃŔꢀឍ៖⃄

ზꢇÅꢈ̭؏҈᣿⃄ᖰЭꢀឍ。

R

LV_CCgood

Q

S

OVP

OCP

AOCP

TSD

ტဘ᪗ἡƽᒄ (AOCP)

ୢ᥼ᴁॷ᝔ἡ

ࡈ

lᥡ

ٱ

ʽᢿ，͗ᣩᥡꢀ di/dtꢃŔଇꢀ

ἡ

׏

ईᒶֱ OCPꢃ+Эἡট MOSFET。ୢ᥼ዿἫჵ௪

ꢀիℝೃĮnꢃ-0.9 V，෦ᒶֱ AOCPꢃ✄ẁᣩꢀឍზ

ꢇ。

ꢔ 20. AR ꢘ௪Ŕꢗ᮸ᨦꢔ

ᒶֱƽᒄ

׮

，FSFR-XSꢃईȼᵂ៖⃄ t ꢃ᣿ͥ፻ё

stop

᪗իƽᒄ(OVP)

ᄳ LVcc ᪎А 23 V ៖，෦ᒶֱꢃOVP。ईş✈ᩕ҉থ

ঔŻၴꢃFSFR−XS ѿ╧რꢀŔꢃVcc ៖，ş✈ᵄƽᒄ。

✈，͖ꢅ V ꢃ⛻ℝၖ᪎А V

。FSFR-XSꢃŔȼᵂ៖

Css

⃄

׏

ꢂ⛻ჯĐ

٧ᅷϚ

：

CssL

t_STOP+ C_SS@ {(R_SS) R_MIN) ø 5 kW}

(eq. 5)

ᨿ؏҈៖⃄ t

׏

ᚎਾꢂؙჯ (4)。

s/s

www.onsemi.cn

11

PCB ꢙꢚꢥꢦ

⋍͓ឍ (TSD)

ꢂnꢊָի

ࡈ

Ŕ᩠෤

ࡊ

ꢉ、ꢊָի

ࡈ

Ŕᴁॷֿ⃯ዿ

⛽ǈؙؙտ

׏ࣀ

்ֱ⛿ՀՊᶴ⛽ၓጱꢊꢋ。RTꢃჵ௪ꢌ

ꢍŔᖇЖꢋꢌई PCBꢃ࿣ภ⛺፻ꢊϽॷֿꢀἡ▏ᢿӥ

ࣔ

᠏ꢎᏰՀՊᶴ⛽ၓጱŔꢊᑑտ

ࣀ

。ᄳꢀĮƇ MOSFET

ꢍᣟො᫪៖，ꢂϽॷֿꢀἡἡ

ױ

ොೄŔꢋꢌ⛺ΑचŔ

យ

ױ

ֱ⛿ָӶ。យ

ױ

ǈ֭ŔΑच⛿᫪᪗、ꢏͅ᏶®

MOSFET

٬ᖇЖ

IC ई⛰ꢆ෡᎕ꢅşᖇЖ IC ᪠Ἣ

MOSFET Ŕტဘ᪗ꢃָᅷᣔِԵ。ୢ᥼ꢃႆᡕ᪗ॶ

130°C，෦ᒶֱ⋍ꢀឍ。

ꢢ✈ꢁℋŔꢁἡꢣἫ

FSFR-XS

ߋ

Ϸ᪠Ἣ⃯ꢀἡꢂ៯ի，ୢ

ࣞ

23

٬

ࣞ

24

ᐠЊ。ԪỂ᪠Ἣយჯ̡ᚈ᪠Ἣꢀℋ⛿Įѿ૧，ꢈ᠏

ꢉỂ᪠ἫយჯŔ᪠Ἣǁ

ח

͗ᣩᩓĮრꢀ

ࡊ

ૐ。

R ꢃჵ௪ἡϚŔꢀἡ，ꢅşᅷᶯꢆ MOSFETꢃŔො᫪ᓡ

T

ঽ៖⃄

פ

⛽ǈ

׬

。ᄚ⊨ლᙾ෦ R ꢃჵ௪ꢌꢍŔᖇЖꢋ

T

ꢌ⛾ PCBꢃ࿣ภ⛺ŔϽॷֿꢀἡᢿᅤϦრ。

ࣞ

25ꢃ᠞Њ

ՀՊᶴၓጱእΕŔЊꢎ。

Cr

Ns

Np

+

Control

IC

V_CS

I_ds

CS

SG

PG

Ids

R_sense

+

−

V _CS

ꢔ 25. ՀՊᶴꢧጱЊꢨ

ꢔ 23. ꢁỂ᪠Ἣ

I _ds

V _CS

+

Cr

Control

IC

V _CS

Np

Ns

CS

PG

SG

R_sense

+

−

Ids

ꢔ 24. ꢤỂ᪠Ἣ

UniFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

www.onsemi.cn

12

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SIP9 26x10.5

CASE 127EM

ISSUE O

DATE 31 DEC 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13718G

SIP9 26x10.5

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SIP9 26x10.5

CASE 127EN

ISSUE O

DATE 31 DEC 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13719G

SIP9 26x10.5

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

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onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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


型号：	FSFR1800XSL
厂家：	ONSEMI
描述：	集成电源开关 (FPS™)，用于 260W 半桥谐振转换器局域网开关驱动电源开关接口集成电路转换器
文件：	总15页 (文件大小：902K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSFR1800XSL [ONSEMI]

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