FSGM0565RLDTU_技术文档

FSGM0565R

Green-Mode Power Switch

Description

The FSGM0565RB is an integrated Pulse Width Modulation

®

(PWM) controller and SENSEFET specifically designed for offline

Switch−Mode Power Supplies (SMPS) with minimal external

components. The PWM controller includes an integrated

fixed−frequency oscillator, Under−Voltage Lockout (UVLO),

Leading−Edge Blanking (LEB), optimized gate driver, internal

soft−start, temperature−compensated precise current sources for loop

compensation, and self−protection circuitry. Compared with a discrete

MOSFET and PWM controller solution, the FSGM series can reduce

total cost, component count, size, and weight; while simultaneously

increasing efficiency, productivity, and system reliability. This device

provides a basic platform suited for cost−effective design of a flyback

converter.

www.onsemi.com

TO−220−6LD LF

CASE 340BN

Features

• Soft Burst−Mode Operation for Low Standby Power Consumption

and Low Noise

• Precision Fixed Operating Frequency: 66 kHz

• Pulse−by−Pulse Current Limit

TO−220−6LD LF

CASE 340BG

• Various Protection Functions: Overload Protection (OLP),

Over−Voltage Protection (OVP), Abnormal Over−Current Protection

(AOCP), Internal Thermal Shutdown (TSD) with Hysteresis,

Output−Short Protection (OSP), and Under−Voltage Lockout

(UVLO) with Hysteresis

TO−220 FULLPAK 6LD LF

• Auto−Restart Mode

• Internal Startup Circuit

CASE 340BP

MARKING DIAGRAM

• Internal High−Voltage SENSEFET: 650 V

• Built−in Soft−Start: 15 ms

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Power Supply for LCD TV and Monitor, STB and DVD

$Y&Z&3&K

GM0765R

$Y&Z&3&K

GM0765R

Combination

$Y

&Z

&3

&K

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Date Code Format

= 2−Digit Lot Run Tracebility Code

GM0765R = Specific Device Code Data

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

June, 2019 − Rev. 2

FSGM0565R/D

FSGM0565R

ORDERING INFORMATION

Output Power Table (Note 2)

85 − 265 V

230V ꢀ 15% (Note 3)

AC

Operating

Junction

Temperature

Adapter

(Note 4)

Open Frame

Adapter

Open Frame

R

Replaces

Device

DS(ON)

(Note 5)

(Note 4)

(Note 5)

Current Limit

Part Number

Package

(Max.)

Shipping

FSGM0565RWDTU

TO−220F

6−Lead

−40°C ~

+125°C

2.20 A

2.2 W

70 W

80 W

41 W

60 W

FSDM0565RE

400 / Tube

(Note 1)

W−Forming

FSGM0565RUDTU

FSGM0565RLDTU

TO−220F

6−Lead

(Note 1)

U−Forming

−40°C ~

+125°C

2.20 A

2.2 W

400 / Tube

TO−220F

6−Lead

(Note 1)

L−Forming

−40°C ~

+125°C

1. Pb−free package per JEDEC J−STD−020B.

2. The junction temperature can limit the maximum output power.

3. 230 V or 100 / 115 V with voltage doubler.

AC

4. Typical continuous power in a non−ventilated enclosed adapter measured at 50°C ambient temperature.

5. Maximum practical continuous power in an open−frame design at 50°C ambient temperature.

Application Circuit

V_O

AC

IN

V_STR

Drain

PWM

GND

V_CC

FB

Figure 1. Typical Application Circuit

www.onsemi.com

2

FSGM0565R

Internal Block Diagram

N.C.

V

STR

V

CC

Drain

6

3

5

1

I_CH

V

ref

V

burst

V_CCgood

7.5V / 12V

0.5 V / 0.7 V

Soft Burst

Soft Start

V

ref

CC

OSC

I_DELAY

I_FB

S

Q

PWM

Gate

Driver

FB

4

R

3R

LEB (300 ns)

R

t

< t

OSP

(1.2 ms)

ON

LPF

2

GND

V

AOCP

V

OSP

S

R

Q

TSD

V

6^SV^D

V_CCgood

Q

V

CC

V

OVP

24.5 V

Figure 2. Internal Block Diagram

Pin Configuration

6. V

STR

5. N.C.

4. FB

3. V_CC

2. GND

1. Drain

FSGM0565R

Figure 3. Pin Configuration (Top View)

www.onsemi.com

3

FSGM0565R

PIN DEFINITIONS

Pin No.

Name

Drain

GND

Description

1

2

3

SENSEFET Drain. High−voltage power SENSEFET drain connection.

Ground. This pin is the control ground and the SENSEFET source.

V

CC

Power Supply. This pin is the positive supply input, which provides the internal operating current for both startup and

steady−state operation.

4

FB

Feedback. This pin is internally connected to the inverting input of the PWM comparator. The collector of an

opto−coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and

GND. If the voltage of this pin reaches 6 V, the overload protection triggers, which shuts down the power switch.

5

6

N.C.

No connection.

V

STR

Startup. This pin is connected directly, or through a resistor, to the high−voltage DC link. At startup, the internal

high−voltage current source supplies internal bias and charges the external capacitor connected to the V pin.

CC

Once V reaches 12 V, the internal current source (I ) is disabled.

CC

CH

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Min

−

Max

650

26

Unit

V

STR

V

STR

Pin Voltage

V

Drain Pin Voltage

Pin Voltage

−

V

DS

V

CC

V

−

V

CC

V

Feedback Pin Voltage

Drain Current Pulsed

−0.3

−

12

V

FB

I

11

A

DM

I

Continuous Switching Drain Current (Note 6)

T

= 25°C

−

5.6

3.4

295

45

A

DS

C

= 100°C

−

A

C

E

Single Pulsed Avalanche Energy (Note 7)

−

mJ

W

°C

V

AS

P

Total Power Dissipation (T = 25°C) (Note 8)

−

D

C

T

Maximum Junction Temperature

Operating Junction Temperature (Note 9)

Storage Temperature

−

150

+125

+150

−

J

−40

−55

2.5

2

T

STG

V

Minimum Isolation Range (Note 10)

Electrostatic Discharge Capability

ISO

ESD

Human Body Model, JESD22−A114

Charged Device Model, JESD22−C101

−

kV

2

−

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (D

= 0.75) and junction temperature

MAX

(see Figure 4).

7. L = 45mH, starting T = 25°C.

J

8. Infinite cooling condition (refer to the SEMI G30−88).

9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.

10.The voltage between the package back side and the lead is guaranteed.

I_DS

D_MAX

f_SW

Figure 4. Repetitive Peak Switching Current

www.onsemi.com

4

FSGM0565R

THERMAL IMPEDANCE T = 25°C unless otherwise specified.

A

Symbol

Characteristic

Value

62.5

3

Unit

°C/W

q

Junction−to−Ambient Thermal Impedance (Note 11)

Junction−to−Case Thermal Impedance (Note 12)

JA

q

JC

11. Infinite cooling condition (refer to the SEMI G30−88).

12.Free standing with no heat−sink under natural convection.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

SENSEFET SECTION

−

BV

Drain−Source Breakdown Voltage

Zero−Gate−Voltage Drain Current

Drain−Source On−State Resistance

Input Capacitance (Note 13)

Output Capacitance (Note 13)

Rise Time

V

CC

V

DS

V

GS

V

DS

V

DS

V

DS

V

DS

V

DS

V

DS

= 0 V, I = 250 mA

650

V

DSS

D

−

250

mA

= 520 V, T = 125°C

I

A

DSS

−

R

= 10 V, I = 1 A

1.8

515

75

2.2

W

pF

ns

DS(ON)

D

−

C

= 25 V, V = 0 V, f = 1MHz

GS

ISS

−

C

= 25 V, V = 0 V, f = 1MHz

GS

OSS

t

= 325 V, I = 4 A, R = 25 W

26

r

D

G

t

Fall Time

= 325 V, I = 4 A, R = 25 W

25

f

D

G

t

Turn−on Delay Time

= 325 V, I = 4 A, R = 25 W

14

d(on)

d(off)

D

G

Turn−off Delay Time

= 325 V, I = 4 A, R = 25 W

32

D

G

CONTROL SECTION

f

Switching Frequency

V

= 14 V, V = 4 V

60

66

5

72

10

75

0

kHz

%

S

CC

FB

−

−25°C < T < +125°C

Df

Switching Frequency Variation (Note 13)

Maximum Duty Ratio

J

S

D

V

CC

V

CC

V

FB

V

FB

= 14 V, V = 4 V

65

70

%

MAX

FB

−

D

Minimum Duty Ratio

= 14 V, V = 0 V

%

MIN

FB

I

Feedback Source Current

UVLO Threshold Voltage

= 0

160

11

210

12

260

13

8.0

mA

V

= 0 V, V Sweep

CC

START

V

After Turn−on, V = 0 V

7.0

7.5

V

STOP

FB

−

V

OP

V

CC

Operating Range

13

23

V

−

t

Internal Soft−Start Time

V

= 40 V, V Sweep

15

ms

S/S

STR

CC

BURST−MODE SECTION

Burst−Mode Voltage

V

= 14 V, V Sweep

0.6

0.4

−

0.7

0.5

0.8

0.6

−

V

BURH

CC

FB

V

BURL

Hys

PROTECTION SECTION

200

mV

I

Peak Drain Current Limit

di/dt = 300 mA/ms

2.0

5.5

2.5

−

2.2

6.0

2.4

6.5

4.1

−

A

V

LIM

V

Shutdown Feedback Voltage

Shutdown Delay Current

V

CC

V

CC

= 14 V, V Sweep

FB

SD

I

= 14 V, V = 4 V

3.3

mA

ns

V

DELAY

FB

Hys

Leading−Edge Blanking Time (Note 13, 14)

Over−Voltage Protection

300

24.5

V

CC

Sweep

23.0

26.0

OVP

www.onsemi.com

5

FSGM0565R

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

J

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

PROTECTION SECTION

t

Output Short

Protection (Note 13)

Threshold Time

OSP Triggered when t < t &

OSP

1.0

1.8

2.0

130

−

1.2

2.0

2.5

140

30

1.4

2.2

3.0

150

−

ms

V

OSP

ON

V

t

> V

(Lasts Longer than

FB

OSP_FB

OSP

)

V

Threshold V

OSP

FB

t

V

FB

Blanking Time

ms

°C

OSP_FB

T

Thermal Shutdown Temperature (Note 13)

Shutdown Temperature

Hysteresis

SD

Hys

TOTAL DEVICE SECTION

I

Operating Supply Current, (Control Part in

Burst Mode)

V

= 14 V, V = 0 V

1.2

2.0

0.5

1.6

2.5

0.6

2.0

3.0

0.7

mA

OP

CC

FB

I

Operating Switching Current, (Control Part

and SENSEFET Part)

= 14 V, V = 4 V

FB

OPS

CC

I

Start Current

V

= 11 V (Before V Reaches

CC CC

START

V

)

START

I

Startup Charging Current

V

= V = 0 V, V

= 40 V

Sweep

1.00

1.15

26

1.50

mA

V

CH

CC

FB

STR

−

V

STR

Minimum V

Supply Voltage

= V = 0 V, V

FB

STR

CC

STR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

13.Although these parameters are guaranteed, they are not 100% tested in production.

14.t

includes gate turn−on time.

LEB

COMPARISON OF FSDM0565RE AND FSGM0565R

Function

Burst Mode

Lightning Surge

Soft−Start

FSDM0565RE

FSGM0565R

Advanced Soft Burst

Strong

Advantages of FSGM0565R

Low noise and low standby power

Advanced Burst

Enhanced SENSEFET and controller against lightning surge

Longer soft−start time

10 ms (Built−in)

15 ms (Built−in)

Protections

OLP

OVP

TSD

OLP

OVP

Enhanced protections and high reliability

OSP

AOCP

TSD with Hysteresis

Power Balance

Long T

Very Short T

The difference of input power between the low and high input

voltage is quite small

CLD

www.onsemi.com

6

FSGM0565R

TYPICAL CHARACTERISTICS (Characteristic graphs are normalized at T = 25°C)

A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 5. Operating Supply Current (I_OP) vs. T_A

Figure 6. Operating Switching Current (I_OPS) vs. T_A

1.40

1.30

1.20

1.10

1.00

0.90

0.80

0.70

0.60

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 7. Startup Charging Current (I_CH) vs. T_A

Figure 8. Peak Drain Current Limit (I_LIM) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 9. Feedback Source Current (I_FB) vs. T_A

Figure 10. Shutdown Delay Current (I_DELAY) vs. T_A

www.onsemi.com

7

FSGM0565R

TYPICAL CHARACTERISTICS (Characteristic graphs are normalized at T = 25°C)

A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 11. UVLO Threshold Voltage (V_START) vs. T_A

Figure 12. UVLO Threshold Voltage (V_STOP) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 13. Shutdown Feedback Voltage (V_SD) vs. T_A

Figure 14. Over−Voltage Protection (V_OVP) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

−40°C −25°C

0°C

25°C

50°C

75°C

100°C 125°C

Temperature [°C]

Figure 15. Switching Frequency (f_S) vs. T_A

Figure 16. Maximum Duty Ratio (D_MAX) vs. T_A

www.onsemi.com

8

FSGM0565R

FUNCTIONAL DESCRIPTION

the required output voltage. This helps prevent transformer

saturation and reduces stress on the secondary diode during

startup.

Startup

At startup, an internal high−voltage current source

supplies the internal bias and charges the external capacitor

Feedback Control

(CVcc) connected to the V pin, as illustrated in Figure 17.

This device employs current−mode control, as shown in

Figure 18. An opto−coupler (such as the FOD817) and shunt

regulator (such as the KA431) are typically used to

implement the feedback network. Comparing the feedback

CC

When V reaches 12 V, the FSGM0465R begins switching

CC

and the internal high− voltage current source is disabled. The

FSGM0465R continues normal switching operation and the

power is supplied from the auxiliary transformer winding

voltage with the voltage across the R

resistor makes it

SENSE

unless V goes below the stop voltage of 7.5 V.

possible to control the switching duty cycle. When the

reference pin voltage of the shunt regulator exceeds the

internal reference voltage of 2.5 V, the opto−coupler LED

current increases, pulling down the feedback voltage and

reducing drain current. This typically occurs when the input

voltage increases or the output load is decreases.

CC

V_DC

C_Vcc

Pulse−by−Pulse Current Limit

Because current− mode control is employed, the peak

current through the SENSEFET is limited by the inverting

V_CC

V_STR

3

6

input of PWM comparator (V *), as shown in Figure 18.

FB

I_CH

Assuming that the 210 mA current source flows only through

the internal resistor (3R + R = 11.6 kW), the cathode voltage

of diode D2 is about 2.4 V. Since D1 is blocked when the

V_ref

V_CCgood

7.5 V / 12 V

feedback voltage (V ) exceeds 2.4 V, the maximum

FB

Internal

Bias

voltage of the cathode of D2 is clamped at this voltage.

Therefore, the peak value of the current through the

SENSEFET is limited.

Figure 17. Startup Block

Leading−Edge Blanking (LEB)

Soft−Start

At the instant the internal SENSEFET is turned on, a

high−current spike usually occurs through the SENSEFET,

caused by primary−side capacitance and secondary−side

rectifier reverse recovery. Excessive voltage across the

RSENSE resistor leads to incorrect feedback operation in

the current mode PWM control. To counter this effect, the

FSGM0565RB employs a leading−edge blanking (LEB)

circuit. This circuit inhibits the PWM comparator for tLEB

(300 ns) after the SENSEFET is turned on.

The FSGM0465R has an internal soft−start circuit that

increases PWM comparator inverting input voltage,

together with the SENSEFET current, slowly after it starts.

The typical soft−start time is 15 ms. The pulse width to the

power switching device is progressively increased to

establish the correct working conditions for transformers,

inductors, and capacitors. The voltage on the output

capacitors is progressively increased to smoothly establish

Drain

1

V_ref

V_CC

I_DELAY

I_FB

OSC

FB

3R

V_OUT

V_FB

PWM

4

Gate

Driver

D1

D2

FOD817

KA431

*

C_FB

R

V_FB

LEB (300 ns)

OSP

OLP

V_OSP

R_SENSE

GND

AOCP

V

AOCP

2

V_SD

Figure 18. Pulse Width Modulation Circuit

www.onsemi.com

9

FSGM0565R

Protection Circuits

current, thus increasing the feedback voltage (V ). If V

FB

The FSGM0565RB has several self−protective functions,

such as Overload Protection (OLP), Abnormal

Over−Current Protection (AOCP), Output−Short Protection

(OSP), Over−Voltage Protection (OVP), and Thermal

Shutdown (TSD). All the protections are implemented as

auto−restart. Once the fault condition is detected, switching

is terminated and the SENSEFET remains off. This causes

exceeds 2.4 V, D1 is blocked and the 3.3 mA current source

starts to charge C slowly up In this condition, V

continues increasing until it reaches 6.0 V, when the

switching operation is terminated, as shown in Figure 20.

The delay time for shutdown is the time required to charge

FB

.

FB

C

FB

from 2.4 V to 6.0 V with 3.3 mA. A 25 ~ 50 ms delay is

typical for most applications. This protection is

implemented in auto−restart mode.

V

CC

to fall. When VB falls to the Under−Voltage Lockout

CC

(UVLO) stop voltage of 7.5 V, the protection is reset and the

startup circuit charges the V capacitor. When V reaches

the start voltage of 12.0 V, the FSGM0565RB resumes

normal operation. If the fault condition is not removed, the

V_FB

CC

Overload Protection

6.0 V

2.4 V

SENSEFET remains off and V drops to stop voltage

CC

again. In this manner, the auto−restart can alternately enable

and disable the switching of the power SENSEFET until the

fault condition is eliminated. Because these protection

circuits are fully integrated into the IC without external

components, the reliability is improved without increasing

cost.

t

12

= C x (6.0 − 2.4) / I

FB delay

t₁

t₂

t

Fault

occurs

Fault

removed

Power

on

V_DS

Figure 20. Overload Protection

Abnormal Over−Current Protection (AOCP)

When the secondary rectifier diodes or the transformer

pins are shorted, a steep current with extremely high di/dt

can flow through the SENSEFET during the minimum

turn−on time. Even though the FSGM0565RB has overload

protection, it is not enough to protect the FSGM0565RB in

that abnormal case; since severe current stress is imposed on

the SENSEFET until OLP is triggered. The FSGM0565RB

internal AOCP circuit is shown in Figure 21. When the gate

turn−on signal is applied to the power SENSEFET, the

AOCP block is enabled and monitors the current through the

sensing resistor. The voltage across the resistor is compared

with a preset AOCP level. If the sensing resistor voltage is

greater than the AOCP level, the set signal is applied to the

S−R latch, resulting in the shutdown of the SMPS.

V_CC

12.0 V

7.5 V

t

Normal

operation

Fault

situation

Normal

operation

Figure 19. Auto−Restart Protection Waveforms

Overload Protection (OLP)

Drain

Overload is defined as the load current exceeding its

normal level due to an unexpected abnormal event. In this

situation, the protection circuit should trigger to protect the

SMPS. However, even when the SMPS is in normal

operation, the overload protection circuit can be triggered

during the load transition. To avoid this undesired operation,

the overload protection circuit is designed to trigger only

after a specified time to determine whether it is a transient

situation or a true overload situation. Because of the

pulse−by−pulse current limit capability, the maximum peak

current through the SENSEFET is limited and, therefore, the

maximum input power is restricted with a given input

voltage. If the output consumes more than this maximum

1

OSC

3R

PWM

Gate

Driver

*

R

V_FB

LEB (300 ns)

R_SENSE

V_AOCP

GND

Q

S

2

R

V_CCgood

power, the output voltage (V

voltage. This reduces the current through the opto−coupler

LED, which also reduces the opto−coupler transistor

) decreases below the set

OUT

Figure 21. Abnormal Over−Current Protection

www.onsemi.com

10

FSGM0565R

Output−Short Protection (OSP)

Thermal Shutdown (TSD)

If the output is shorted, steep current with extremely high

di/dt can flow through the SENSEFET during the minimum

turn−on time. Such a steep current brings high−voltage

stress on the drain of the SENSEFET when turned off. To

protect the device from this abnormal condition, OSP is

The SENSEFET and the control IC on a die in one

package makes it easier for the control IC to detect the over

temperature of the SENSEFET. If the temperature exceeds

~140°C, the thermal shutdown is triggered and the

FSGM0465R stops operation. The FSGM0465R operates in

auto−restart mode until the temperature decreases to around

110°C, when normal operation resumes.

included. It is comprised of detecting V and SENSEFET

FB

turn−on time. When the V is higher than 2 V and the

FB

SENSEFET turn−on time is lower than 1.2 ms, the

FSGM0565RB recognizes this condition as an abnormal

Soft Burst−Mode Operation

To minimize power dissipation in standby mode, the

FSGM0465R enters burst−mode operation. As the load

decreases, the feedback voltage decreases. As shown in

Figure 23, the device automatically enters burst mode when

error and shuts down PWM switching until V reaches

CC

V

START

again. An abnormal condition output short is shown

in Figure 22.

the feedback voltage drops below V

(500 mV). At this

BURL

point, switching stops and the output voltages start to drop

at a rate dependent on standby current load. This causes the

MOSFET

Rectifier

Diode

Current

I_LIM

Drain

V

FB

* = 0.5 V

Current

*

feedback voltage to rise. Once it passes V

(700 mV),

ꢀ V * = 2.0 V

BURH

FB

V_FB

switching resumes. At this point, the drain current peak

increases gradually. This soft burst−mode can reduce

audible noise during burst−mode operation. The feedback

voltage then falls and the process repeats. Burst−mode

operation alternately enables and disables switching of the

SENSEFET, thereby reducing switching loss in standby

mode.

I_Lm

0

t

1.2 ms

t_OFFt_ON

output short occurs

V_OUT

I_OUT

0

t

V_O

OSP triggered

OSP

0

t

V_FB

Figure 22. Output−Short Protection

Over−Voltage Protection (OVP)

0.70 V

If the secondary−side feedback circuit malfunctions or a

solder defect causes an opening in the feedback path, the

current through the opto−coupler transistor becomes almost

0.50 V

t

I_DS

Soft Burst

zero. Then V climbs up in a similar manner to the overload

FB

situation, forcing the preset maximum current to be supplied

to the SMPS until the overload protection is triggered.

Because more energy than required is provided to the output,

the output voltage may exceed the rated voltage before the

overload protection is triggered, resulting in the breakdown

of the devices in the secondary side. To prevent this

t

V_DS

situation, an OVP circuit is employed. In general, the V

CC

is proportional to the output voltage and the FSGM0565RB

uses V instead of directly monitoring the output voltage.

t

CC

Switching

disabled

Switching

disabled

t4

If V exceeds 24.5 V, an OVP circuit is triggered, resulting

CC

t1

t2 t3

in the termination of the switching operation. To avoid

undesired activation of OVP during normal operation, V

should be designed to be below 24.5 V.

CC

Figure 23. Burst−Mode Operation

www.onsemi.com

11

FSGM0565R

TYPICAL APPLICATION CIRCUIT

Application

Input Voltage

85 ∼ 265V

Rated Output

Rated Power

LCD TV, Monitor Power Supply

5.0 V (2 A)

14.0 V (2.8 A)

49.2 W

AC

Key Design Notes:

2. The SMD−type capacitor (C106) must be placed

1. The delay time for overload protection is designed

to be about 40 ms with C105 (33 nF). OLP time

between 25 ms (22 nF) and 50 ms (43 nF) is

recommended.

as close as possible to the V pin to avoid

CC

malfunction by abrupt pulsating noises and to

improve ESD and surge immunity. Capacitance

between 100 nF and 220 nF is recommended.

Schematic

L201

5μH

D201

MBR20150CT

T101

EER3016

14V, 2.8A

1

2

10

C201

1000μF

25V

C202

1000μF

25V

C206

100nF

SMD

R103

51kΩ

1W

C104

3.3nF

630V

R102

75kΩ

6

D101

1N 4007

C103

100μF

400V

3

2

BD101

FSGM0465R

G2SBA60

C301

4.7nF

Y2

6

1

3

V_STR

3

Drain

L202

5μH

R104

51Ω

0.5W

C106

220nF

SMD

C107

47μF

50V

D202

FYPF2006DN

5

4

N.C.

NTC101

5D−9

V_CC

5V, 2A

FB

4

7, 8

4

GND

D102

UF 4004

C207

100nF

SMD

C204

1000μF

16V

C203

2200μF

10V

C105

33nF

100V

C102

150nF

275VAC

2

5

6

ZD101

1N4749A

LF101

20mH

R201

620Ω

R101

1.5MΩ

1W

R204

8kΩ

R202

1.2kΩ

R203

18kΩ

C205

68nF

IC301

FOD817B

IC201

KA431LZ

F101

FUSE

250V

C101

220nF

R205

275VAC

8kΩ

3.15A

Figure 24. Schematic of Demonstration Board

Transformer

EER3019

1

10

N_14V

9

8

7

6

2

N_p/2

3

N_p/2

4

5

N_a

N_5V

BOT

TOP

Figure 25. Schematic of Transformer

www.onsemi.com

12

FSGM0565R

WINDING SPECIFICATION

Barrier Tape

BOT

TOP

Ts

Pin (S ꢁ F)

Wire

Turns

Winding Method

N /2

3 → 2

0.35 φ x 1

22

Solenoid Winding

2.0 mm

1

p

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

8 → 9

0.4 φ x 3 (TIW)

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

10 → 8

0.4 φ x 3 (TIW)

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

7 → 6

0.4 φ x 3 (TIW)

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

4 → 5

0.15 φ x 1

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

N /2 2 → 1

0.35 φ x 1

N

3

5V

N

5

14V

N

3

5V

N

7

4.0 mm

2.0 mm

1

a

21

p

Insulation: Polyester Tape t = 0.025 mm, 2 Layers

ELECTRICAL CHARACTERISTICS

Specification

Remark

67 kHz, 1 V

Short All Other Pins

Inductance

Leakage

1 − 3

700 mH 7%

15 mH Maximum

Core & Bobbin

• Core: EER3019 (Ae = 134.0 mm )

2

• Bobbin: EER3019

www.onsemi.com

13

FSGM0565R

BILL OF MATERIALS

Part #

Value

Fuse

Note

Part #

Value

Note

Capacitor

F101

250 V 3.15 A

C101

220 nF / 275 V

Box (Pilkor)

NTC

C102

C103

150 nF / 275 V

Box (Pilkor)

NTC101

5D−11

DSC

100 mF / 400 V

Electrolytic (SamYoung)

Resistor

1.5 MW, J

75 kW, J

51 kW, J

51 W, J

C104

C105

C106

C107

C201

C202

C203

C204

C205

C206

3.3 nF / 630 V

33 nF / 100 V

220 nF

Film (Sehwa)

R101

R102

R103

R104

R201

R202

R203

R204

R205

1 W

Film (Sehwa)

1/2 W

SMD (2012)

1 W

47 mF / 50 V

1000 mF / 25 V

2200 mF / 10 V

1000 mF / 16 V

68 nF / 100 V

100 nF

Electrolytic (SamYoung)

1/2 W

620 W, J

1.2 kW, F

18 kW, F

8 kW, F

1/4 W, 1%

8 kW, F

C207

C301

100 nF

4.7 nF / Y2

Inductor

20 mH

Film (Sehwa)

IC

FSGM0565R

KA431LZ

FOD817B

Diode

FSGM0565R

IC201

ON Semiconductor

Y−cap (Samhwa)

IC301

LF101

L201

L202

Line filter 0.7Ø

5A Rating

5 mH

D101

D102

RGP15M

Vishay

5 mH

5A Rating

UF4004

Jumper

ZD101

D201

D202

1N4749

Vishay

J101

T101

MBR20150CT

FYPF2006DN

ON Semiconductor

Transformer

700 mH

BD101

G3SBA60

Vishay

SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

www.onsemi.com

14

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220−6LD LF

CASE 340BG

ISSUE A

DATE 01 SEP 2021

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13840G

TO−220−6LD LF

PAGE 1 OF 1

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220−6LD LF

CASE 340BN

ISSUE A

DATE 22 JUL 2021

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13847G

TO−220−6LD LF

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220 FULLPAK 6LD LF

CASE 340BP

ISSUE A

DATE 01 OCT 2021

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13848G

TO−220 FULLPAK 6LD LF

PAGE 1 OF 1

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales




型号：	FSGM0565RLDTU
厂家：	ONSEMI
描述：	具有异常 OCP 功能的 650 V 集成电源开关，用于 60 W 离线反激式转换器局域网开关电源开关转换器
文件：	总18页 (文件大小：767K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSGM0565RLDTU [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E