FSQ100 [ONSEMI]
用于 8W 离线反激转换器的 650V 集成电源开关;
| 型号： | FSQ100 |
| 厂家： | 
ONSEMI |
| 描述： | 用于 8W 离线反激转换器的 650V 集成电源开关 开关 电源开关 转换器 |
| 文件： | 总13页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2011
FSQ100
Green Mode Fairchild Power Switch (FPS™)
Features
Description
The FSQ100 consists of an integrated Pulse Width
Modulator (PWM) and SenseFET, specifically designed
for high-performance, off-line, Switch-Mode Power
Supplies (SMPS) with minimal external components.
This device is an integrated high-voltage power
switching regulator that combines a VDMOS SenseFET
with a voltage mode PWM control block. The integrated
PWM controller features include a fixed oscillator,
Under-Voltage Lockout (UVLO) protection, Leading
Edge Blanking (LEB), an optimized gate turn-on/turn-off
driver, Thermal Shutdown (TSD) protection, and
temperature-compensated precision-current sources for
loop compensation and fault protection circuitry.
. Internal Avalanche-Rugged SenseFET
. Precision Fixed Operating Frequency: 67KHz
. Burst-Mode Operation
. Internal Startup Circuit
. Pulse-by-Pulse Current Limiting
. Over-Voltage Protection (OVP)
. Overload Protection (OLP)
. Internal Thermal Shutdown Function (TSD)
. Auto-Restart Mode
. Under-Voltage Lockout (UVLO) with Hysteresis
. Built-in Soft-Start
. Secondary-Side Regulation
When compared to a discrete MOSFET and controller or
RCC solution, the FSQ100 device reduces total
component count and design size and weight, while
increasing efficiency, productivity, and system reliability.
This device provides a basic platform well suited for
cost-effective flyback converters.
Applications
. Charger & Adapter for Mobile Phone, PDA, MP3
. Auxiliary Power for White Goods, PC, C-TV, Monitor
Related Application Notes
. AN-4137 — Design Guidelines for Off-line Flyback
Converters using FPS™
. AN-4141 — Troubleshooting and Design Tips for
Fairchild Power Switch (FPS™) Flyback Applications
. AN-4147 — Design Guidelines for RCD Snubber of
Flyback
. AN-4134 — Design Guidelines for Off-line Forward
Converters using FPS™
. AN-4138 — Design Considerations for Battery
Charger Using Green Mode Fairchild Power Switch
(FPS™)
Ordering Information
Product Number
Package
Marking Code
BVDSS
fOSC
RDS(ON)
FSQ100
8-DIP
Q100
650V
67KHz
16Ω
FPS™ is a trademark of Fairchild Semiconductor Corporation.
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
Typical Application
AC
IN
DC
OUT
VSTR
PWM
VCC
Drain
VFB
GND
Figure 1. Typical Flyback Application
Table 1. Output Power Table
Product
Open Frame(1)
230VAC ±15%(2)
85~265VAC
FSQ100
13W
8W
Notes:
1. Maximum practical continuous power in an open-frame design with sufficient drain pattern as a heat sinker, at
50C ambient.
2. 230VAC or 100/115VAC with doubler.
Internal Block Diagram
VSTR
Drain
5
6,7,8
L
VCC
2
Internal
Bias
Voltage
Ref
H
UVLO
9/7V
Vck
Idelay Ifb
µA
µA
400
5
OSC
SFET
DRIVER
PWM
S
Q
VFB
3
R
S/S
15ms
BURST
VBURL
VBURH
/
LEB
ILIM
NC
4
OLP
Rsense
Reset
Vth
S
Q
VSD
OVP
R
Min.20V
TSD
A/R
1
GND
Figure 2. Functional Block Diagram
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
2
Pin Assignments
Drain
Drain
GND
VCC
1
2
8
7
6
5
VFB
NC
3
4
Drain
VSTR
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
Description
1
GND
Ground. SenseFET source terminal on primary-side and internal control ground.
Positive Supply Voltage Input. Although connected to an auxiliary transformer winding,
current is supplied from pin 5 (VSTR) via an internal switch during startup (see Figure 2). When
2
3
VCC
VCC reaches the UVLO upper threshold (9V), the internal startup switch opens and device power
is supplied via the auxiliary transformer winding.
Feedback. Inverting input to the PWM comparator with its normal input level lies between 0.5V
and 2.5V. It has a 0.4mA current source connected internally, while a capacitor and opto-
coupler are typically connected externally. A feedback voltage of 4.5V triggers overload
protection (OLP). There is a time delay while charging external capacitor Cfb from 3V to 4.5V
using an internal 5µA current source. This time delay prevents false triggering under transient
conditions, but still allows the protection mechanism to operate in true overload conditions.
VFB
4
5
NC
No Connection.
Startup. This pin connects directly to the rectified AC line voltage source. At startup, the internal
switch supplies internal bias and charges an external storage capacitor placed between the VCC
pin and ground. Once the VCC reaches 9V, the internal switch stops charging the capacitor.
VSTR
SenseFET Drain. The drain pins are designed to connect directly to the primary lead of the
transformer and are capable of switching a maximum of 650V. Minimizing the length of the trace
connecting these pins to the transformer decreases leakage inductance.
6,7,8
Drain
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
VDRAIN
VSTR
VDG
Parameter
Value
650
Unit
V
Drain Pin Voltage
VSTR Pin Voltage
Drain-Gate Voltage
Gate-Source Voltage
Supply Voltage
650
V
650
V
VGS
±20
V
VCC
20
V
VFB
Feedback Voltage Range
Total Power Dissipation
-0.3 to VSTOP
1.40
V
PD
W
°C
°C
°C
TJ
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
Internally limited
-25 to +85
-55 to +150
TA
TSTG
Notes:
1. Repetitive rating: Pulse width is limited by maximum junction temperature.
2. L = 24mH, starting TJ = 25C.
Thermal Impedance
TA = 25°C, unless otherwise specified. All items are tested with the JEDEC standards JESD 51-2 and 51-10 (DIP).
Symbol
θJA
Parameter
Value
88.84
13.94
Unit
°C/W
°C/W
Junction-to-Ambient Thermal Impedance(3)
Junction-to-Case Thermal Impedance(4)
θJC
Notes:
3. Free-standing with no heatsink; without copper clad. Measurement condition; just before junction temperature TJ
enters into OTP.
4. Measured on the DRAIN pin close to plastic interface.
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
4
Electrical Characteristics
TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
SenseFET Section
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TC=125C
VGS=10V, ID=0.5A
25
µA
IDSS
Zero-Gate-Voltage Drain Current
200
RDS(ON)
gfs
Drain-Source On-State Resistance(5)
Forward Trans-Conductance
Input Capacitance
16
1.3
162
18
22
Ω
VDS=50V, ID=0.5A
1.0
61
S
CISS
COSS
CRSS
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
pF
Reverse Transfer Capacitance
3.8
Control Section
fOSC
ΔfOSC
DMAX
VSTART
VSTOP
IFB
Switching Frequency
Switching Frequency Variation(6)
67
±5
67
9
73
±10
74
kHz
%
-25°C ≤ TA ≤ 85°C
Maximum Duty Cycle
60
8
%
VFB=GND
10
V
UVLO Threshold Voltage
VFB=GND
6
7
8
V
Feedback Source Current
Internal Soft Start Time
0V ≤ VFB ≤ 3V
0.35
10
0.40
15
0.45
20
mA
ms
tS/S
Burst Mode Section
VBURH
0.6
0.7
0.55
150
0.8
V
V
TJ=25°C
VBURL
Burst Mode Voltage
0.45
0.65
VBUR(HYS)
Hysteresis
mV
Protection Section
ILIM
TSD
Peak Current Limit
0.475 0.550 0.650
A
°C
V
Thermal Shutdown Temperature(7)
Shutdown Feedback Voltage
Over-Voltage Protection
125
4.0
20
4
145
4.5
VSD
5.0
6
VOVP
IDELAY
V
Shutdown Delay Current
3V ≤ VFB ≤ VSD
5
µA
Total Device Section
IOP
Operating Supply Current (8)
ICH Startup Charging Current
Notes:
5. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
VCC ≤ 16V
1.5
3.0
mA
µA
VCC=0V , VSTR=50V
450
550
650
6. These parameters, although guaranteed, are tested in EDS (wafer test) process.
7. These parameters, although guaranteed, are not 100% tested in production.
8. Control part only.
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSQ100 Rev. 1.0.2
5
Typical Performance Characteristics
These characteristic graphs are normalized at TA = 25°C.
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
50
100
150
-50
0
50
100
150
Temperature [°C]
Temperature [°C]
Figure 4. Over-Voltage Protection (VOVP) vs. TA
Figure 5.
Operating Supply Current (IOP) vs. TA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
-50
0
50
100
150
0
50
100
150
Temperature [°C]
Temperature [°C]
Figure 6. Start Threshold Voltage (VSTART) vs. TA
Figure 7.
Stop Threshold Voltage (VSTOP) vs. TA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
-50
0
50
100
150
0
50
100
150
Temperature [°C]
Temperature [°C]
Figure 8. Operating Frequency (fOSC) vs. TA
Figure 9.
Maximum Duty Cycle (DMAX) vs. TA
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA = 25°C.
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
50
100
150
-50
0
50
100
150
Temperature [°C]
Temperature [°C]
Figure 10. Peak Current Limit (ILIM) vs. TA
Figure 11.
Feedback Source Current (IFB) vs. TA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
-50
0
50
100
150
0
50
100
150
Temperature [°C]
Temperature [°C]
Figure 12. Shutdown Delay Current (IDELAY) vs. TA
Figure 13. Shutdown Feedback Voltage (VSD) vs. TA
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
7
Functional Description
When the shunt regulator reference pin voltage exceeds
the internal reference voltage of 2.5V, the opto-coupler
LED current increases, the feedback voltage VFB is
pulled down, and it reduces the duty cycle. This
happens when the input voltage increases or the output
load decreases.
1. Startup: At startup, the internal high-voltage current
source supplies the internal bias and charges the
external VCC capacitor, as shown in Figure 14. When
VCC reaches 9V, the device starts switching and the
internal high-voltage current source stops charging the
capacitor. The device is in normal operation provided
VCC does not drop below 7V. After startup, the bias is
supplied from the auxiliary transformer winding.
OSC
VCC
5µA
Vref
400µA
VIN ,dc
ISTR
Gate
driver
V
V
fb
O
4
Vstr
+
Cfb
R
V
VCC
L
fb
KA431
H
OLP
VSD
9V/7V
Figure 16. PWM and Feedback Circuit
3. Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, the primary-side
capacitance and secondary-side rectifier diode reverse
recovery typically causes a high-current spike through
the SenseFET. Excessive voltage across the RSENSE
resistor lead to incorrect pulse-by-pulse current limit
protection. To avoid this, a leading edge blanking (LEB)
circuit disables pulse-by-pulse current-limit protection
block for a fixed time (tLEB) after the SenseFET turns on.
Figure 14. Internal Startup Circuit
Calculating the VCC capacitor is an important step to
design with the FSQ100. At initial startup, the maximum
value of start operating current ISTART is about 100µA,
which supplies current to UVLO and VREF blocks. The
charging current IVCC of the VCC capacitor is equal to ISTR
– 100µA. After VCC reaches the UVLO start voltage, only
the bias winding supplies VCC current to the device.
When the bias winding voltage is not sufficient, the VCC
level decreases to the UVLO stop voltage and the
internal current source is activated again to charge the
VCC capacitor. To prevent this VCC fluctuation
(charging/discharging), the VCC capacitor should be
chosen to have a value between 10µF and 47µF.
4. Protection Circuit: The FSQ100 has protective
functions, such as overload protection (OLP), over
voltage protection (OVP), under-voltage lockout (UVLO),
and thermal shutdown (TSD). Because these protection
circuits are fully integrated inside the IC without external
components, reliability is improved without increasing
costs. Once a fault condition occurs, switching is
terminated and the SenseFET remains off. This causes
VIN ,dc
ISTR
VSTR
VCC to fall. When VCC reaches the UVLO stop voltage
IVcc = ISTR-ISTART
IVcc = ISTR-ISTART
VSTOP (7V), the protection is reset and the internal high-
voltage current source charges the VCC capacitor via the
VSTR pin. When VCC reaches the UVLO start voltage
VSTART (9V), the device resumes normal operation. In
this manner, the auto-restart can alternately enable and
disable the switching of the power SenseFET until the
fault condition is eliminated.
J-FET
VCC
ISTART
UVLO
Vref
VCC
UVLO
OSC
VSTART
VCC must not drop
below VSTOP
5 µA 400µA
R
GATE
DRIVER
S Q
R
VSTOP
+
-
Vfb
Cfb
Bias winding
voltage
4
OLP
t
S Q
R
4.5 V
OLP, TSD
Protection Block
RESET
TSD
Figure 15. Charging VCC Capacitor through Vstr
A/R
2. Feedback Control: The FSQ100 is a voltage mode
controlled device, as shown in Figure 16. Usually, an
opto-coupler and shunt regulator, like KA431 are used
to implement the feedback network. The feedback
voltage is compared with an internally generated
sawtooth waveform. This directly controls the duty cycle.
Figure 17. Protection Block
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
8
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding a pre-set level due to an
unexpected event. In this situation, the protection circuit
should be activated to protect the SMPS. However,
even when the SMPS is operating normally, the over
load protection (OLP) circuit can be activated during the
load transition. To avoid this undesired operation, the
OLP circuit is designed to be activated after a specified
time to determine whether it is a transient situation or a
true overload situation. If the output consumes more
than the maximum power determined by ILIM, the output
voltage (VO) decreases below its rating voltage. This
reduces the current through the opto-coupler LED,
which also reduces the opto-coupler transistor current,
thus increasing the feedback voltage (VFB). If VFB
exceeds 3V, the feedback input diode is blocked and the
5µA current source (IDELAY) starts to charge CFB slowly
up to VCC. In this condition, VFB increases until it reaches
4.5V, when the switching operation is terminated, as
shown in Figure 18. The shutdown delay time is the time
required to charge CFB from 3V to 4.5V with a 5µA
current source.
Drain current
0.55A
0.31A
2.14ms
7steps
t
Figure 19. Internal Soft-Start
6. Burst Operation: To minimize the power dissipation
in standby mode, the FSQ100 enters burst-mode
operation. As the load decreases, the feedback voltage
decreases. The device automatically enters burst mode
when the feedback voltage drops below VBURL (0.55V).
At this point, switching stops and the output voltages
start to drop. This causes the feedback voltage to rise.
Once is passes VBURH (0.70V), switching starts again.
The feedback voltage falls and the process repeats.
Burst-mode operation alternately enables and disables
switching of the power MOSFET to reduce the switching
loss in standby mode.
VFB
Overload Protection
4.5V
OSC
GATE
DRIVER
S
R
Q
3V
5µA
400µA
4
on /off
Vfb
12 = Cfb×(V( 2 )-V(t1 )) /IDELAY
0.70 V
/0.55V
t1
t2
t
Burst Operation Block
V(t2)−V(t1)
IDELAY
t12 =Cfb
;
IDELAY =5µA,V(t1) =3V,V(t2) =4.5V
Figure 20. Burst Operation Block
VO
Figure 18. Overload Protection (OLP)
set
VO
4.2 Thermal Shutdown (TSD): The SenseFET and the
control IC are integrated, making it easier for the control
IC to detect the temperature of the SenseFET. When
the temperature exceeds approximately 145C, thermal
shutdown is activated.
V
FB
0.70V
0.55V
5. Soft-Start: The FPS has an internal soft-start circuit
that slowly increases the feedback voltage, together with
the SenseFET current, right after it starts. The typical
soft-start time is 15ms, as shown in Figure 19, where
progressive increment of the SenseFET current is
allowed during the startup phase. Soft-start circuit
progressively increases current limits to establish proper
working conditions for transformers, inductors,
capacitors, and switching devices. It also helps to
prevent transformer saturation and reduces the stress
on the secondary diode.
Ids
Vds
t
Figure 21. Burst Operation Function
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
9
Application Tips
1. Methods of Reducing Audible Noise
Switching mode power converters have electronic and
magnetic components that generate audible noise when
the operating frequency is in the range of 20~20,000Hz.
Even though they operate above 20kHz, they can make
noise, depending on the load condition. Designers can
employ several methods to reduce noise.
Glue or Varnish
The most common method involves using glue or
varnish to tighten magnetic components. The motion of
core, bobbin and coil, and the chattering or
magnetostriction of core can cause the transformer to
produce audible noise. The use of rigid glue and varnish
helps reduce the transformer noise, but can crack the
core. This is because sudden changes in the ambient
temperature cause the core and the glue to expand or
shrink in a different ratio.
Figure 22. Equal Loudness Curves
Ceramic Capacitor
Using a film capacitor instead of a ceramic capacitor as
a snubber capacitor is another noise-reduction solution.
Some dielectric materials show a piezoelectric effect,
depending on the electric field intensity. Hence, a
snubber capacitor becomes one of the most significant
sources of audible noise. It is possible to use a Zener
clamp circuit instead of an RCD snubber for higher
efficiency as and lower audible noise.
Adjusting Sound Frequency
Figure 23. Typical Feedback Network of FPS™
2. Reference Materials
Moving the fundamental frequency of noise out of
2~4kHz range is the third method. Generally, humans
are more sensitive to noise in the range of 2~4kHz.
When the fundamental frequency of noise is located in
this range, the noise is perceived as louder, although
the noise intensity level is identical (refer to Figure 22
Equal Loudness Curves).
AN-4134 — Design Guidelines for Off-line Forward
Converters using FPS™
AN-4137 — Design Guidelines for Off-line Flyback
Converters using FPS™
When FPS acts in burst mode and the burst operation is
suspected to be a source of noise, this method may be
helpful. If the frequency of burst-mode operation lies in
the range of 2~4 kHz, adjusting the feedback loop can
shift the burst operation frequency. To reduce the burst
operation frequency, increase a feedback gain capacitor
(CF), opto-coupler supply resistor (RD), and feedback
capacitor (CB); and decrease a feedback gain resistor
(RF), as shown in Figure 23.
AN-4138 — Design Considerations for Battery Charger
Using Green Mode Fairchild Power Switch (FPS™)
AN-4140 — Transformer Design Consideration for Off-
line Flyback Converters Using Fairchild Power Switch
(FPS™)
AN-4141 — Troubleshooting and Design Tips for
Fairchild Power Switch (FPS™) Flyback Applications
AN-4147 — Design Guidelines for RCD Snubber of
Flyback
AN-4148 — Audible Noise Reduction Techniques for
FPS™Applications
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
www.fairchildsemi.com
10
9.83
9.00
8
5
6.670
6.096
1
4
8.255
7.610
TOP VIEW
1.65
1.27
(0.56)
7.62
3.683
3.200
5.08 MAX
3.60
3.00
0.33 MIN
0.356
0.200
15°
0°
0.560
0.355
2.54
9.957
7.870
7.62
FRONT VIEW
SIDE VIEW
NOTES:
A. CONFORMS TO JEDEC MS-001, VARIATION BA
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M-2009
E. DRAWING FILENAME: MKT-N08Frev3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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