FTCO3V455A1 [ONSEMI]
汽车功率集成模块 (PIM)，MOSFET，40 V，150 A;
| 型号： | FTCO3V455A1 |
| 厂家： | 
ONSEMI |
| 描述： | 汽车功率集成模块 (PIM)，MOSFET，40 V，150 A |
| 文件： | 总11页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
3-Phase Inverter
Automotive Power Module
FTCO3V455A1
General Description
The FTCO3V455A1 is a 40 V low R
automotive qualified
DS(ON)
APMCB−A19
power module featuring a 3−phase MOSFET inverter optimized for
12 V battery systems. It includes a precision shunt resistor for current
sensing an NTC for temperature sensing and an RC snubber circuit.
The module utilizes onsemi’s trench MOSFET technology and it is
designed to provide a very compact and high performance variable
speed motor drive for applications like electric power steering,
electro−hydraulic power steering, electric water pumps, electric oil
pumps. The power module is 100% lead free, RoHS and UL
compliant.
CASE MODCG
ELECTRICAL CONNECTION
Features
• 40 V − 150 A 3−phase Trench MOSFET Inverter Bridge
• 1% Precision Shunt Current Sensing
• Temperature Sensing
• DBC Substrate
• 100% Lead Free and RoHS Compliant with 2000/53/C Directive
• UL94V−0 Compliant
• Isolation Rating of 2500 V rms/min
• Mounting Through Screws
• Automotive Qualified
MARKING DIAGRAM
$Y
Benefits
FTCO3V455A1
• Low Junction−sink Thermal Resistance
• Low Inverter Electrical Resistance
• High Current Handling
• Compact Motor Design
$Y
FTCO3V455A1
= ON Semiconductor
= Specific Device Code
• Highly Integrated Compact Design
• Better EMC and Electrical Isolation
• Easy and Reliable Installation
• Improved Overall System Reliability
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
Applications
• Electric and Electro−Hydraulic Power Steering
• Electric Water Pump
• Electric Oil Pump
• Electric Fan
Flammability Information
• All Materials Present in the Power Module Meet UL Flammability
Rating Class 94 V−0 or Higher
Solder
• Solder Used is a Lead Free SnAgCu Alloy
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2021 − Rev. 2
FTCO3V455A1/D
FTCO3V455A1
ABSOLUTE MAXIMUM RATINGS (T = 25_C, Unless Otherwise Specified)
J
Symbol
Parameter
Rating
40
Unit
V
V
V
(Q1~Q6)
(Q1~Q6)
Drain to Source Voltage
DS
Gate to Source Voltage
20
V
GS
I (Q1~Q6)
Drain Current Continuous (T = 25_C, V = 10 V)
150
947
115
175
125
A
D
C
GS
E
P
T
(Q1~Q6)
Single Pulse Avalanche Energy (Note 1)
mJ
W
AS
D
Power Dissipation
Maximum Junction Temperature
Storage Temperature
_C
_C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Symbol
Parameter
Q1 Thermal Resistance J −C
Q2 Thermal Resistance J −C
Q3 Thermal Resistance J −C
Min.
Typ.
0.8
Max.
1.1
Unit
_C/W
_C/W
_C/W
Rthjc
−
−
−
Thermal Resistance
Junction to case,
Single Inverter FET,
chip center
0.8
1.1
0.8
1.1
Q4 Thermal Resistance J −C
Q5 Thermal Resistance J −C
Q6 Thermal Resistance J −C
Maximum Junction Temperature
Operating Sink Temperature
Storage Temperature
−
−
0.8
0.8
0.8
1.1
1.1
_C/W
_C/W
_C/W
_C
_C
_C
(Note 2)
−
1.1
T
J
−
175
120
125
T
S
−40
−40
T
STG
1. Starting T = 25_C, V = 20 V, I = 64 A, L = 480 mH.
J
DS
AS
2. These values are based on Thermal simulations and PV level measurements.
These values assume a single MOSFET is on, and the test condition for referenced temperature is “Chip Center”.
This means that the DT is measured between the T of each MOSFET and the temperature of the case located immediately under the center
J
of the chip.
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2
FTCO3V455A1
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin Number
Pin Name
Pin Descriptions
1
TEMP 1
NTC Thermistor Terminal 1
2
TEMP 2
NTC Thermistor Terminal 2
3
4
PHASE W SENSE
GATE HS W
Source of HS W and Drain of LS W
Gate of HS phase W MOSFET
Gate of LS phase W MOSFET
Source of HS V and Drain of LS V
Gate of HS phase V MOSFET
Gate of LS phase V MOSFET
Source of HS U and Drain of LS U
Gate of HS phase U MOSFET
Drain of HS U, V and W MOSFET
Gate of LS phase U MOSFET
5
GATE LS W
6
PHASE V SENSE
GATE HS V
7
8
GATE LS V
9
PHASE U SENSE
GATE HS U
10
11
12
VBAT SENSE
GATE LS U
13
14
15
SHUNT P
SHUNT N
VBAT
Source of LS U, V W MOSFETS / Shunt +
Negative shunt terminal (shunt −)
Positive battery terminal
16
GND
Negative battery terminal
Motor phase U
17
18
19
PHASE U
PHASE V
PHASE W
Motor phase V
Motor phase W
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3
FTCO3V455A1
VBAT
VBAT SENSE
GATE HS U
GATE HS V
GATE HS W
PHASE 1 SENSE
PHASE U
PHASE V
PHASE W
PHASE 2 SENSE
PHASE 3 SENSE
GATE LS U
GATE LS V
GATE LS W
SHUNT P
CSR
SHUNT N
TEMP 1
TEMP 2
GND
Figure 2. Internal Equivalent Circuit
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4
FTCO3V455A1
ELECTRICAL CHARACTERISTICS (T = 25_C, Unless Otherwise Specified)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
D−S Breakdown Voltage
(Inverter MOSFETs)
BVDSS
VGS = 0, ID = 250 mA
40
−
−
V
Gate to Source Voltage
(Inverter MOSFETs)
VGS
−20
2.0
−
20
V
Threshold Voltage
(Inverter MOSFETs)
VTH
VSD
VGS = VDS, ID = 250 mA, Tj = 25_C
VGS = 0 V, IS = 80 A, Tj = 25_C
VGS = 10 V, ID = 80 A, Tj = 25_C
2.8
0.8
4.0
V
V
1.28
MOSFET Body Diode Forward Voltage
Inverter High Side MOSFETs Q1
(See Note 3)
mW
−
−
−
−
−
−
−
1.15
1.22
1.31
1.36
1.57
1.86
−
1.66
1.73
1.82
1.87
2.08
2.32
1.0
RDS(ON)Q1
RDS(ON)Q2
RDS(ON)Q3
RDS(ON)Q4
RDS(ON)Q5
Inverter High Side MOSFETs Q2
(See Note 3)
VGS = 10 V, ID = 80 A, Tj = 25_C
VGS = 10 V, ID = 80 A, Tj = 25_C
VGS = 10 V, ID = 80 A, Tj =25_C
VGS = 10 V, ID = 80 A, Tj = 25_C
VGS = 10 V, ID = 80 A, Tj = 25_C
VGS = 0 V, VDS = 32 V, Tj = 25_C
mW
mW
mW
mW
mW
mA
Inverter High Side MOSFETs Q3
(See Note 3)
Inverter Low Side MOSFETs Q4
(See Note 3)
Inverter Low Side MOSFETs Q5
(See Note 3)
Inverter Low Side MOSFETs Q6
(See Note 3)
RDS(ON)Q6
IDSS
Inverter MOSFETs
(UH,UL,VH,VL,WH,WL)
Inverter MOSFETs
Gate to Source Leakage Current
IGSS
VGS = 20 V
−
−
−
100
5.5
nA
VGS = 10 V, ID = 80 A, Tj = 25_C
mW
4.69
Total loop resistance VLINK(+) − V0 (−)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. All MOSFETs have same die size and R
. The different R
values listed in the datasheet are due to the different access points
DS(ON)
DS(ON)
available inside the module for R
measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low
DS(ON)
side MOSFETs (Q4, Q5, Q6) do not have source sense wire bonds, thus resulting in higher R
values.
DS(ON)
TEMPERATURE SENSE (NTC Thermistor)
Symbol
Test Conditions
Test Time
Min
Typ
Max
Unit
Voltage
Current = 1 mA, Temperature = 25_C
T = 0.5 ms
T = 0.5 ms
7.5
−
12
V
CURRENT SENSE RESISTOR
Symbol
Test Conditions
Current Sense resistor current = 80 A
Test Time
Min
Typ
Max
Unit
Resistance
0.46
−
0.53
mW
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5
FTCO3V455A1
TYPICAL CHARACTERISTICS
(Generated using MOSFETs assembled in a TO263 package, for reference purposes only.)
4000
1000
500
If R = 0
t
= (L)(I )/(1.3*RATED BV
− V )
AV
AS
DSS DD
00
10us
If R
AV
t
= (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
AS
DSS DD
100
10
1
100us
100
10
1
STARTING TJ = 25oC
LIMITED
BY PACKAGE
STARTING TJ = 150oC
1ms
10ms
DC
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY r
T
= MAX RATED
J
o
DS(on)
T
C
= 25 C
0.1
0.01
0.1
1
10
100
1000 5000
11
0
100
tAV, TIME INAVALANCHE (ms)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Application Notes AN7514 and AN7515
Figure 3. Forward Bias Safe Operating Area
Figure 4. Unclamped Inductive Switching Capability
160
160
PULSE DURATION = 80ms
VGS = 10V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
VGS = 5V
V
DD = 5V
120
80
40
0
120
80
40
0
VGS = 4.5V
TJ = 175oC
TJ = 25oC
VGS = 4V
TJ = −55oC
VGS = 3.5V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
V
TO SOURCE VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
DS , DRAIN
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
50
40
30
20
10
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80ms
DUTYCYCLE = 0.5% MAX
TJ = 25oC
TJ = 175oC
I
D = 80A
VGS = 10V
3
4
5
6
7
8
9
10
−80 −40
0
40
80 120 160 200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATETO SOURCE VOLTAGE(V)
Figure 7. Drain to Source On−Resistance Variation Figure 8. Normalized Drain to Source On Resistance
vs Gate to Source Voltage vs Junction Temperature
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6
FTCO3V455A1
TYPICAL CHARACTERISTICS
(Generated using MOSFETs assembled in a TO263 package, for reference purposes only.)
1.15
1.2
1.0
0.8
0.6
0.4
ID = 250mA
VGS = VDS
ID = 250mA
1.10
1.05
1.00
0.95
0.90
-80ꢀꢁ-40
0
40
80 120 160 200
-80ꢀꢁ-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 9. Normalized Gate Threshold Voltage
vs Junction Temperature
Figure 10. Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
10
40000
ID = 80A
Ciss
V
DD = 15V
8
6
4
2
0
10000
VDD = 25V
Coss
VDD = 20V
1000
Crss
f = 1MHz
VGS = 0V
100
0
50
1 00
150
200
250
0.1
1
10
50
VDS, DRAIN TO SOURCE VOLTAGE(V)
Qg, GATECHARGE(nC)
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge vs Gate to Source Voltage
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7
FTCO3V455A1
MECHANICAL CHARACTERISTICS AND RATINGS
Limits
Typ
−
Min
0
Max
+200
0.8
Parameter
Device Flatness
Condition
Unit
mm
N.m
g
Note Figure 13.
Mounting Torque
Weight
Mounting Screw: − M3, Recommended 0.7 N.m
0.6
−
0.7
20
−
1
Figure 13. Flatness Measurement Position
ORDERING INFORMATION
Device Marking
MOSFET
Packing Type
Quantity
FTCO3V455A1
PCF33478
Tube
11
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8
FTCO3V455A1
VBAT
GND PHASE U PHASE V PHASE W
Figure 14.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
APMCB−A19 / 19LD, APM, PDD STD DBC, DIP TYPE
CASE MODCG
ISSUE O
DATE 31 DEC 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13507G
APMCB−A19 / 19LD, APM, PDD STD DBC, DIP TYPE
PAGE 1 OF 1
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