FTD2017CTL [ONSEMI]
Power Field-Effect Transistor, 6A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, TSSOP-8;
| 型号： | FTD2017CTL |
| 厂家： | 
ONSEMI |
| 描述： | Power Field-Effect Transistor, 6A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, TSSOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1930
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
FTD2017C
Features
•
•
Low ON-resistance
2.5V drive
•
•
Mount heigt 1.1mm
Composite type, facilitating high-density mounting
•
•
Drain common specifications
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
20
±12
6
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (1000mm2 0.8mm) 1unit
When mounted on ceramic substrate (1000mm2 0.8mm)
40
A
≤
μ
≤
DP
P
P
1.35
1.4
150
W
W
°C
°C
×
D
T
×
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: TSSOP8
7006A-005
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
3.0
0.125
Packing Type : TL
Marking
8
5
LOT No.
D2017C
TL
1 : Drain
1
4
0.25
2 : Source1
3 : Source1
4 : Gate1
Electrical Connection
8
7
6
5
0.65
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
SANYO : TSSOP8
1
2
3
4
http://semicon.sanyo.com/en/network
No. A1930-1/4
30211PA TKIM TC-00002574
FTD2017C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA, V =0V
20
(BR)DSS
D
GS
I
V
=20V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
0.5
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=10V, I =6A
D
7.5
S
|
R
R
R
R
(on)1
(on)2
(on)3
(on)4
I =6A, V =4.5V
GS
13
14
17
18
23
24
30
33
m
Ω
Ω
Ω
Ω
DS
DS
DS
DS
D
I =6A, V =4V
D GS
m
m
m
Static Drain-to-Source On-State Resistance
I =3A, V =3.1V
D GS
15
19
I =3A, V =2.5V
D GS
15.4
20
Turn-ON Delay Time
Rise Time
t (on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
620
1160
3660
2010
6.2
ns
d
t
ns
ns
r
Turn-OFF Delay Time
Fall Time
t (off)
d
t
ns
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
V
DS
=10V, V =4.5V, I =6A
GS
nC
nC
nC
V
D
Qgs
Qgd
V
DS
=10V, V =4.5V, I =6A
GS
1.7
D
V
DS
=10V, V =4.5V, I =6A
GS
1.3
D
V
SD
I =6A, V =0V
0.79
1.2
S
GS
Switching Time Test Circuit
V
=10V
V
DD
IN
4.5V
0V
I
=5A
D
V
IN
R =2Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
R
g
G
FTD2017C
P.G
50Ω
S
R =2.1kΩ
g
I
D
-- V
I
-- V
DS
D GS
10
9
10
9
V
=10V
DS
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
0
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
-- V
IT16339
Gate-to-Source Voltage, V -- V
GS
IT16340
DS
No. A1930-2/4
FTD2017C
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
Ta=25°C
I =3A
D
6A
5
0
5
0
0
2
4
6
8
10
12
IT16341
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT16342
GS
| yfs | -- I
I
-- V
D
S SD
10
10
7
V
=10V
V
=0V
7
5
DS
GS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16344
0.1
1.0
Drain Current, I -- A
SW Time -- I
IT16343
Diode Forward Voltage, V -- V
SD
D
V
-- Qg
D
GS
10000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
I
=10V
V
=10V
=4.5V
DS
D
DD
7
5
=6A
V
GS
3
2
1000
7
5
3
2
0.5
0
100
0.1
1
2
3
4
5
6
7
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
D
Total Gate Charge, Qg -- nC
IT16346
IT16345
A S O
P
-- Ta
D
1.6
100
7
5
When mounted on ceramic substrate
(1000mm2×0.8mm)
I
=40A (PW
≤10μs)
DP
1.4
3
2
1.35
10
7
5
1.2
1.0
0.8
0.6
0.4
I
=6A
D
3
2
1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
0.1
7
5
Ta=25°C
0.2
0
3
2
Single pulse
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
20
40
60
80
100
120
140
0.1
1.0
10
-- V
100
IT16347
Drain-to-Source Voltage, V
DS
Ambient Temperature, Ta -- °C
IT16348
No. A1930-3/4
FTD2017C
Note on usage : Since the FTD2017C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2011. Specifications and information herein are subject
to change without notice.
PS No. A1930-4/4
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