FW216A-TL-2W [ONSEMI]

N 沟道，功率 MOSFET，35V，4.5A，64mΩ;


型号：	FW216A-TL-2W
厂家：	ONSEMI
描述：	N 沟道，功率 MOSFET，35V，4.5A，64mΩ 脉冲光电二极管晶体管
文件：	总5页 (文件大小：260K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENA0176C

FW216A

N-Channel Power MOSFET

http://onsemi.com

35V, 4.5A, 64m , Dual SOIC8

Features

•

ON-resistance Nch : R (on)1=49m (typ.)

4.0V drive

Halogen free compliance

Protection diode in

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±20

GSS

4.5

Drain Current (PW 10 s)

Duty cycle 1%

When mounted on ceramic substrate (2000mm²0.8mm) 1unit, PW 10s

When mounted on ceramic substrate (2000mm²0.8mm), PW 10s

1.6

≤

Allowable Power Dissipation

Total Dissipation

°C

≤

2.2

≤

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: SOIC8

7072-001

• JEITA, JEDEC

: SC-87, SOT-96

• Minimum Packing Quantity : 2,500 pcs./reel

FW216A-TL-2W

4.9

0.22

Packing Type : TL

Marking

FW216

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

LOT No.

1.27

0.254 (GAGE PLANE)

0.445

Electrical Connection

SOIC8

Semiconductor Components Industries, LLC, 2013

October, 2013

O1613 TKIM/61312 TKIM/31412 TKIM/20112PA TKIM TC-00002686 No. A0176-1/5

FW216A

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

I =1mA, V =0V

(BR)DSS

=35V, V =0V

DSS

DS GS

=±16V, V =0V

±10

2.5

GSS

GS DS

(off)

=10V, I =1mA

1.5

yfs

DS D

Forward Transfer Admittance

=10V, I =4.5A

2.6

(on)1

(on)2

(on)3

I =4.5A, V =10V

112

140

Static Drain to Source On-State Resistance

I =2A, V =4.5V

D GS

I =2A, V =4.0V

100

280

Input Capacitance

Ciss

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=10V, f=1MHz

t (on)

See speciﬁed Test Circuit.

Turn-OFF Delay Time

Fall Time

t (off)

Total Gate Charge

5.6

1.2

0.8

0.85

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=10V, V =10V, I =4.5A

I =4.5A, V =0V

S GS

1.2

Switching Time Test Circuit

=15V

10V

=4.5A

R =3.3Ω

OUT

PW=10μs

D.C.≤1%

FW216A

P. G

50Ω

Ordering Information

Device

Package

SOIC8

Shipping

2,500pcs./reel

memo

FW216A-TL-2W

Pb Free and Halogen Free

No. A0176-2/5

FW216A

-- V

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

=10V

0.5

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.5

1.0

1.5

2.0

2.5

3.0

4.0

5.0

4.5

IT16698

3.5

Drain to Source Voltage, V

-- V

IT16697

Gate to Source Voltage, V

-- V

(on) -- V

(on) -- Ta

300

250

200

150

100

200

150

100

Ta=25°C

I =2.0A

4.5A

--60 --40 --20

80 100 120 140 160

Gate to Source Voltage, V

-- V

IT16699

Ambient Temperature, Ta -- °C

IT16700

| yfs | -- I

-- V

=10V

=0V

1.0

0.1

0.01

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

IT16702

0.1

1.0

Drain Current, I -- A

IT16701

Diode Forward Voltage, V -- V

SW Time -- I

Ciss, Coss, Crss -- V

1000

100

=15V

=10V

f=1MHz

100

t (on)

1.0

0.1

IT16704

1.0

Drain Current, I -- A

Drain to Source Voltage, V

-- V

IT16703

No. A0176-3/5

FW216A

-- Qg

A S O

100

=10V

I =4.5A

=18A (PW

≤10μs)

I =4.5A

1.0

Operation in this

area is limited by R (on).

0.1

Ta=25°C

Single pulse

1unit

When mounted on ceramic substrate (2000mm²×0.8mm)

0.01

5 7

0.01

0.1

1.0

100

IT16706

Total Gate Charge, Qg -- nC

IT16705

Drain to Source Voltage, V

-- V

-- Ta

P (FET1) -- P (FET2)

D D

2.5

2.0

When mounted on ceramic substrate

(2000mm²×0.8mm), PW

10s

When mounted on ceramic substrate

(2000mm²×0.8mm), PW

10s

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

≤

2.2

2.0

1.6

1.5

1.0

0.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

120

140

160

Ambient Temperature, Ta -- °C

IT16707

Allowable Power Dissipation(FET2), P -- W IT16708

No. A0176-4/5

FW216A

Outline Drawing

Land Pattern Example

FW216A-TL-2W

Mass (g) Unit

Unit: mm

0.082

* For reference

0.65

1.27

Note on usage : Since the FW216A is a MOSFET product, please avoid using this device in the vicinity of

highly charged objects.

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the

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PS No. A0176-5/5

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