FZT790A [ONSEMI]

PNP 低饱和晶体管;


型号：	FZT790A
厂家：	ONSEMI
描述：	PNP 低饱和晶体管开关光电二极管晶体管
文件：	总5页 (文件大小：135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

PNP Low Saturation

Transistor

FZT790A

1. Base

2., 4. Collector

3. Emitter

Description

These devices are designed with high current gain and low

saturation voltage with collector currents up to 3 A continuous.

SOT−223

CASE 318H

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MARKING DIAGRAM

Compliant

ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)

AYW

790AG

(Values are at T = 25°C unless otherwise noted)

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−40

Unit

CEO

CBO

EBO

−50

= Assembly Location

= Year

= Work Week

−5

Collector Current − Continuous

−3

790A

= Specific Device Code

= Pb−Free Package

Operating and Storage Junction

Temperature Range

T , T

−55 to 150

°C

STG

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty−cycle operations.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

THERMAL CHARACTERISTICS (Note 3)

(Values are at T = 25°C unless otherwise noted)

Parameter

Total Power Dissipation

Symbol

Value

Unit

Dissipation Derate Above 25°C

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

62.5

3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)

with minimum land pattern size.

Publication Order Number:

September, 2021 − Rev. 2

FZT790A/D

FZT790A

ELECTRICAL CHARACTERISTICS

(Values are at T = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

= −10 mA, I = 0

Min.

−40

−50

−5.0

Max.

Unit

Collector−Emitter Breakdown Voltage

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cut−Off Current

CEO

CBO

EBO

= −100 mA, I = 0

= −30 V, I = 0

−100

−10

CBO

= −30 V, I = 0, T = 100°C

Emitter Cut−Off Current

DC Current Gain (Note 4)

= −4 V, I = 0

−100

EBO

= −2.0 V, I = −10 mA

300

250

200

150

= −2.0 V, I = −500 mA

= −2.0 V, I = −1.0 A

= −2.0 V, I = −2.0 A

(sat)

Collector−Emitter Saturation Voltage

(Note 4)

= −500 mA, I = −5.0 mA

−0.25

−0.45

−0.75

−1.0

= −1.0 A, I = −10 mA

= −2.0 A, I = −50 mA

Base−Emitter Saturation Voltage (Note 4)

Base−Emitter On Voltage (Note 4)

Transition Frequency

= −1.0 A, I = −10 mA

(on)

= −1.0 A, V = −2.0 V

−1.0

= −50 mA, V = −5.0 V, f = 50 MHz

100

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%

ORDERING INFORMATION

†

Part Number

Top Mark

Package

Shipping

FZT790A

790A

SOT−223 (Pb−Free)

4,000 Units/ Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

FZT790A

TYPICAL PERFORMANCE CHARACTERISTICS

1.4

1.2

1.6

= 2.0 V

b = 10

1.4

1.2

−40°C

0.8

0.6

0.4

0.2

−40°C

0.8

0.6

0.4

0.2

25°C

125°C

0.0001

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT [mA]

I , COLLECTOR CURRENT [A]

Figure 1. Base−Emitter Saturation Voltage

vs. Collector Current

Figure 2. Base−Emitter On Voltage

vs. Collector Current

0.8

400

350

300

250

200

150

100

b = 10

0.7

f =^V1^c.^e0⁼M^2.H^0Vz

obo

0.6

125°C

0.5

25°C

0.4

0.3

−40°C

ibo

0.2

0.1

0.01

0.1

0.5

, COLLECTOR VOLTAGE [V]

50 100

I , COLLECTOR CURRENT [A]

Figure 3. Collector−Emitter Saturation Voltage

vs. Collector Current

Figure 4. Input/Output Capacitance

vs. Reverse Bias Voltage

2.5

2.0

1.5

1.0

0.5

0.0

1000

= 2.0 V

125°C

900

800

700

600

500

400

300

200

100

25°C

−40°C

0.0001

0.001

0.01

0.1

100

125

150

175

I , COLLECTOR CURRENT [A]

TEMPERATURE [°C]

Figure 5. Current Gain vs. Collector Current

Figure 6. Power Dissipation vs. Ambient

Temperature

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−223

CASE 318H

ISSUE B

DATE 13 MAY 2020

SCALE 2:1

= Assembly Location

= Year

= Work Week

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASH70634A

SOT−223

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



相关型号：