GBU6B [ONSEMI]

6 A 桥式整流器;


型号：	GBU6B
厂家：	ONSEMI
描述：	6 A 桥式整流器局域网二极管
文件：	总5页 (文件大小：174K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Bridge Rectifiers

GBU6A - GBU6M

Features

• Glass−Passivated Junction

• Surge Overload Rating: 175 A Peak

• Reliable Low−Cost Construction Utilizing Molded Plastic Technique

• Ideal for Printed Circuit Board

• UL Certified: UL #E258596

SIP4

CASE 127EL

PACKAGE MARKING AND ORDERING INFORMATION

Packing

MARKING DIAGRAM

Method

Part Number

Marking

GBU6A

GBU6B

GBU6D

GBU6G

GBU6J

GBU6K

GBU6M

Package

GBU6A

GBU 4L

Rail

RU$Y&Z&3

GBU6B

GBU

GBU6D

GBU6G

GBU6J

−

GBU6K

GBU6M

= UL Marking

GBU6A

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Specific Device Code

Publication Order Number:

June, 2022 − Rev. 3

GBU6M/D

GBU6A − GBU6M

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)

Value

100

1000

700

Symbol

Parameter

Units

Maximum Repetitive Reverse Voltage

Maximum RMS Bridge Input Voltage

200

140

200

400

280

400

6.0

600

420

600

800

560

800

RRM

RMS

DC Reverse Voltage (Rated V )

100

1000

Average Rectified Forward

Current

T = 100°C

F(AV)

Non−Repetitive Peak Forward Surge Current

8.3 ms Single Half−Sine−Wave

175

FSM

Storage Temperature Range

−55 to +150

°C

STG

Operating Junction Temperature

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

THERMAL CHARECTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

Units

Power Dissipation

Thermal Resistance per Leg, Junction to Ambient (Note 2)

Thermal Resistance per Leg, Junction to Lead (Note 3)

18.6

3.1

°C/W

2. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)

3. Device mounted on Al plate with 2.6 × 1.4 × 0.06 inch (6.5 × 3.5 × 0.15 cm)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

1.0

Units

Forward Voltage, per Element

6.0 A

Reverse Current, per Element at Rated V

T = 25°C

5.0

T = 125°C

500

127

I t

I t Rating for Fusing

t < 8.35 ms

A s

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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GBU6A − GBU6M

TYPICAL PERFORMANCE CHARACTERISTICS

100

HEAT−SINK

MOUNTING, TC

4x4x0.15”

= 25°C

COPPER PLATE

Pulse Width = 300 ms

1% Duty Cycle

MOUNTED ON PC BOARD,

TA 0.5” (12.7 mm) LEAD LENGTH

60 Hz RESISTIVE OR INDUCTIVE LOAD

0.1

0.7

100

150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

Ambient Temperature (5C)

V , Forward Voltage (V)

Figure 1. Forward Current Derating Curve

Figure 2. Forward Voltage Characteristics

175

= 100°C

140

105

0.1

= 105°C

= 25°C

0.01

100

120

140

100

Number of Cycles at 60 Hz

Percent of Rated Peak Reverse Voltage (%)

Figure 3. Reverse Current vs. Reverse Voltage

Figure 4. Non−Repetitive Surge Current

400

= 25°C

f = 1.0 MHz

Visg = 50m Vp−p

100

V , Reverse Voltage (V)

Figure 5. Total Capacitance

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SIP4 22.05x18.55

CASE 127EL

ISSUE O

DATE 31 DEC 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13717G

SIP4 22.05x18.55

PAGE 1 OF 1

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