H11AA4VM [ONSEMI]
6 引脚 DIP 交流输入光电晶体管输出光耦合器;
| 型号： | H11AA4VM |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 交流输入光电晶体管输出光耦合器 输入元件 输出元件 晶体管 光电晶体管 |
| 文件： | 总13页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
H11AA1M, H11AA4M
6-Pin DIP AC Input Phototransistor Optocouplers
Features
Description
■ Bi-polar Emitter Input
The H11AA1M and H11AA4M devices consist of two
gallium-arsenide infrared emitting diodes connected in
inverse parallel driving a single silicon phototransistor
output.
■ Built-in Reverse Polarity Input Protection
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
for 1 Minute
RMS
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ AC Line Monitor
■ Unknown Polarity DC Sensor
■ Telephone Line Interface
Schematic
Package Outlines
1
2
6
BASE
5 COLLECTOR
4 EMITTER
3
Figure 1. Schematic
Figure 2. Package Outlines
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, V
x 1.6 = V
,
IORM
PR
1360
V
V
peak
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V
x 1.875 = V
,
IORM
PR
1594
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
External Creepage
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
175
350
800
DTI
(1)
T
Case Temperature
S
(1)
I
Input Current
mA
mW
Ω
S,INPUT
(1)
P
Output Power
S,OUTPUT
(1)
9
R
Insulation Resistance at T , V = 500 V
> 10
IO
S
IO
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
270
°C
°C
STG
T
Operating Temperature
OPR
T
Junction Temperature
ºC
J
T
Lead Solder Temperature
Total Device Power Dissipation @ 25°C
Derate Linearly From 25°C
°C
SOL
mW
mW/°C
P
D
2.94
EMITTER
I
Continuous Forward Current
60
1.0
mA
A
F
I (pk)
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation @ 25°C
Derate Linearly From 25°C
F
120
1.41
mW
P
D
mW/°C
DETECTOR
I
Continuous Collector Current
Detector Power Dissipation @ 25°C
Derate linearity from 25°C
50
mA
mW
C
150
1.76
P
D
mW/°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C Unless otherwise specified.
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Input Forward Voltage
Capacitance
DETECTOR
I = 10 mA
1.17
80
1.50
V
F
F
C
V = 0 V, f = 1.0 MHz
pF
J
F
BV
BV
BV
BV
Breakdown Voltage, Collector-to-Emitter I = 1.0 mA, I = 0
30
70
5
100
120
10
10
1
V
V
CEO
CBO
EBO
ECO
C
F
Breakdown Voltage, Collector-to-Base
Breakdown Voltage, Emitter-to-Base
I = 100 µA, I = 0
C F
I = 100 µA, I = 0
V
E
F
Breakdown Voltage, Emitter-to-Collector I = 100 µA, I = 0
7
V
E
F
I
Leakage Current, Collector-to-Emitter
Capacitance Collector to Emitter
Collector to Base
V
= 10 V, I = 0
50
nA
pF
pF
pF
CEO
CE
CE
CB
EB
F
C
V
V
V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
10
80
15
CE
CB
EB
C
C
Emitter to Base
Transfer Characteristics
Symbol Characteristics
Current Transfer Ratio,
Test Conditions
Device
Min.
Typ.
Max. Unit
H11AA1M
H11AA4M
20
%
%
CTR
I = 10 mA, V = 10 V
F CE
CE
Collector-to-Emitter
100
I = 10 mA, V = 10 V
(Figure 13)
Current Transfer Ratio,
Symmetry
F
CE
All
All
0.33
3.00
Saturation Voltage,
Collector-to-Emitter
V
I = 10 mA, I = 0.5 mA
F CE
0.40
V
CE(SAT)
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
V
C
R
Input-Output Isolation Voltage t = 1 Minute
4170
VAC
RMS
ISO
ISO
ISO
Isolation Capacitance
Isolation Resistance
V
V
= 0 V, f = 1 MHz
0.7
pF
I-O
I-O
11
= 500 VDC, T = 25°C
10
Ω
A
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
4
Typical Performance Characteristics
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= 25°C
T = 25°C
A
A
Normalized to I = 10 mA
F
80
60
V
= 5 V
CE
40
20
0
-20
-40
-60
-80
-100
0
5
10
15
20
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
I
– FORWARD CURRENT (mA)
F
V
– INPUT VOLTAGE (V)
F
Figure 3. Input Voltage vs. Input Current
Figure 4. Normalized CTR vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
V
= 5 V
V
T
= 5V
CE
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Normalized to I = 10 mA , T = 25°C
= 25°C
F
A
A
I
= 10 mA
= 5 mA
F
I
I
= 20mA
F
F
I
= 10 mA
F
I
= 5 mA
F
I
= 20 mA
F
-60
-40
-20
0
20
40
60
80
100
10
100
– BASE RESISTANCE (kΩ)
1000
R
T
A
– AMBIENT TEMPERATURE (°C)
BE
Figure 5. Normalized CTR vs. Ambient Temperature
Figure 6. CTR vs. RBE (Unsaturated)
100
T
= 25°C
1.0
A
V
T
= 0.3 V
CE
= 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
A
10
1
I
= 20 mA
F
I
= 2.5mA
I = 5mA
F
F
I
= 10 mA
F
I
= 5 mA
F
0.1
I
= 10mA
I = 20mA
F
F
0.01
0.001
10
100
- BASE RESISTANCE (kΩ)
1000
0.01
0.1
1
10
R
BE
I
C
- COLLECTOR CURRENT (mA)
Figure 7. CTR vs. RBE (Saturated)
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
1000
7
6
5
4
3
2
1
0
I
V
T
= 10 mA
= 10 V
V
I
= 10 V
F
CC
= 2 mA
= 100 Ω
= 25°C
CC
C
= 25°C
R
T
L
A
T
off
T
A
100
10
1
f
T
on
T
r
0.1
10
100
R
1000
10000
100000
0.1
1
10
100
- BASE RESISTANCE (kΩ)
R – LOAD RESISTOR (kΩ)
BE
Figure 10. Normalized t vs. R
Figure 9. Switching Speed vs. Load Resistor
on
BE
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10000
1000
100
10
V
I
R
= 10 V
= 2 mA
= 100 Ω
= 25°C
CC
C
L
T
A
V
= 30 V
V
= 10 V
CE
CE
1
0.1
10
100
1000
10000
100000
0
20
40
60
80
100
R
– BASE RESISTANCE (kΩ)
T
– AMBIENT TEMPERATURE (°C)
BE
A
Figure 11. Normalized t vs. R
off
BE
Figure 12. Dark Current vs. Ambient Temperature
10
5
I
=
=
- 10 mA
10 mA
F
I
I
I
1
I
F
I
0.5
NORMALIZED TO:
= 10 V
V
0.1
.05
CE
= 10 mA
I
F
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
.01
.005
I
= 10 mA
F
.01
.05 .1
.5
1
5
10
V
– COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 13. Output Symmetry Characteristics
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
6
Reflow Profile
300
260°C
280
260
240
220
200
180
160
140
120
100
80
> 245°C = 42 s
Time above
183°C = 90 s
°C
1.822°C/s Ramp-up rate
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
7
Ordering Information
Part Number
Package
Packing Method
H11AA1M
DIP 6-Pin
Tube (50 Units)
H11AA1SM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
H11AA1SR2M
H11AA1VM
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
H11AA1SVM
H11AA1SR2VM
H11AA1TVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
Note:
2. The product orderable part number system listed in this table also applies to the H11AA4M device.
Marking Information
1
2
H11AA1
6
V X YY Q
5
3
4
Figure 15. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “5”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA4M Rev. 1.3
www.fairchildsemi.com
8
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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